CN116234416A - 用于磁阻随机存取存储器的磁阻存储器元件 - Google Patents

用于磁阻随机存取存储器的磁阻存储器元件 Download PDF

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Publication number
CN116234416A
CN116234416A CN202211531856.2A CN202211531856A CN116234416A CN 116234416 A CN116234416 A CN 116234416A CN 202211531856 A CN202211531856 A CN 202211531856A CN 116234416 A CN116234416 A CN 116234416A
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CN
China
Prior art keywords
oxide
layer
diffusion barrier
barrier layer
magnetic
Prior art date
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Pending
Application number
CN202211531856.2A
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English (en)
Chinese (zh)
Inventor
D.阿帕尔科夫
R.切普尔斯基
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of CN116234416A publication Critical patent/CN116234416A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
CN202211531856.2A 2021-12-03 2022-12-01 用于磁阻随机存取存储器的磁阻存储器元件 Pending CN116234416A (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US202163285672P 2021-12-03 2021-12-03
US63/285,672 2021-12-03
US17/675,876 US12114578B2 (en) 2021-12-03 2022-02-18 Magnetoresistive memory elements for spin-transfer torque (STT) and spin-orbit torque (SOT) random access memories
US17/675,876 2022-02-18

Publications (1)

Publication Number Publication Date
CN116234416A true CN116234416A (zh) 2023-06-06

Family

ID=82899188

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202211531856.2A Pending CN116234416A (zh) 2021-12-03 2022-12-01 用于磁阻随机存取存储器的磁阻存储器元件

Country Status (6)

Country Link
US (1) US12114578B2 (https=)
EP (1) EP4192222B1 (https=)
JP (1) JP2023083208A (https=)
KR (1) KR20230084003A (https=)
CN (1) CN116234416A (https=)
TW (1) TW202324800A (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20240164219A1 (en) * 2022-11-11 2024-05-16 International Business Machines Corporation Fast switching mram having an aluminum-manganese-germanium free layer combined with a chromium diffusion barrier
US12573438B2 (en) 2024-01-18 2026-03-10 Taiwan Semiconductor Manufacturing Company, Ltd. Device having rows of MRAM cells configured for concurrent writing and reading

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7190557B2 (en) 2004-04-14 2007-03-13 Hitachi Global Storage Technologies Netherlands B.V. Current-in-the-plane spin valve magnetoresistive sensor with dual metal oxide capping layers
US7770282B2 (en) 2005-09-01 2010-08-10 Hitachi Global Storage Technologies Netherlands B.V. Method of making a magnetic sensing device having an insulator structure
JP5768498B2 (ja) 2011-05-23 2015-08-26 ソニー株式会社 記憶素子、記憶装置
US8878318B2 (en) 2011-09-24 2014-11-04 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and method for a MRAM device with an oxygen absorbing cap layer
US9178136B2 (en) 2012-08-16 2015-11-03 Taiwan Semiconductor Manufacturing Company, Ltd. Magnetoresistive random access memory cell and fabricating the same
US9147833B2 (en) 2013-07-05 2015-09-29 Headway Technologies, Inc. Hybridized oxide capping layer for perpendicular magnetic anisotropy
US9425387B1 (en) 2015-09-08 2016-08-23 Headway Technologies, Inc. Magnetic element with perpendicular magnetic anisotropy for high coercivity after high temperature annealing
US10522744B2 (en) 2017-10-10 2019-12-31 Taiwan Semiconductor Manufacturing Company, Ltd. High thermal stability by doping of oxide capping layer for spin torque transfer (STT) magnetic random access memory (MRAM) applications
DE112019003363B4 (de) 2018-07-04 2024-12-05 Sony Semiconductor Solutions Corporation Elemente mit magnetischem tunnelübergang und halbleitervorrichtung
US11165012B2 (en) 2018-10-29 2021-11-02 Taiwan Semiconductor Manufacturing Co., Ltd. Magnetic device and magnetic random access memory
US11009570B2 (en) 2018-11-16 2021-05-18 Samsung Electronics Co., Ltd. Hybrid oxide/metal cap layer for boron-free free layer
US11264566B2 (en) 2019-06-21 2022-03-01 Headway Technologies, Inc. Magnetic element with perpendicular magnetic anisotropy (PMA) and improved coercivity field (Hc)/switching current ratio
US11264560B2 (en) 2019-06-21 2022-03-01 Headway Technologies, Inc. Minimal thickness, low switching voltage magnetic free layers using an oxidation control layer and magnetic moment tuning layer for spintronic applications
US20210159393A1 (en) 2019-11-26 2021-05-27 Globalfoundries Singapore Pte. Ltd. Magnetic tunnel junction devices and methods of forming thereof

Also Published As

Publication number Publication date
US12114578B2 (en) 2024-10-08
JP2023083208A (ja) 2023-06-15
EP4192222A1 (en) 2023-06-07
KR20230084003A (ko) 2023-06-12
TW202324800A (zh) 2023-06-16
EP4192222B1 (en) 2025-05-14
US20230180627A1 (en) 2023-06-08

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