TW202324800A - 磁阻式穿隧接面記憶體元件、用於自旋轉移扭矩及自旋軌道扭矩磁阻式隨機存取記憶體元件 - Google Patents

磁阻式穿隧接面記憶體元件、用於自旋轉移扭矩及自旋軌道扭矩磁阻式隨機存取記憶體元件 Download PDF

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TW202324800A
TW202324800A TW111134159A TW111134159A TW202324800A TW 202324800 A TW202324800 A TW 202324800A TW 111134159 A TW111134159 A TW 111134159A TW 111134159 A TW111134159 A TW 111134159A TW 202324800 A TW202324800 A TW 202324800A
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Taiwan
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oxide
layer
diffusion barrier
barrier layer
magnetic
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TW111134159A
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English (en)
Chinese (zh)
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迪恩特 阿帕科夫
羅曼 查普爾斯基
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南韓商三星電子股份有限公司
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Publication of TW202324800A publication Critical patent/TW202324800A/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
TW111134159A 2021-12-03 2022-09-08 磁阻式穿隧接面記憶體元件、用於自旋轉移扭矩及自旋軌道扭矩磁阻式隨機存取記憶體元件 TW202324800A (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US202163285672P 2021-12-03 2021-12-03
US63/285,672 2021-12-03
US17/675,876 US12114578B2 (en) 2021-12-03 2022-02-18 Magnetoresistive memory elements for spin-transfer torque (STT) and spin-orbit torque (SOT) random access memories
US17/675,876 2022-02-18

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TW202324800A true TW202324800A (zh) 2023-06-16

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TW111134159A TW202324800A (zh) 2021-12-03 2022-09-08 磁阻式穿隧接面記憶體元件、用於自旋轉移扭矩及自旋軌道扭矩磁阻式隨機存取記憶體元件

Country Status (6)

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US (1) US12114578B2 (https=)
EP (1) EP4192222B1 (https=)
JP (1) JP2023083208A (https=)
KR (1) KR20230084003A (https=)
CN (1) CN116234416A (https=)
TW (1) TW202324800A (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI913954B (zh) 2024-01-18 2026-02-01 台灣積體電路製造股份有限公司 記憶體裝置及操作自旋軌道矩磁阻式隨機存取記憶體單元的矩陣的方法
US12573438B2 (en) 2024-01-18 2026-03-10 Taiwan Semiconductor Manufacturing Company, Ltd. Device having rows of MRAM cells configured for concurrent writing and reading

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20240164219A1 (en) * 2022-11-11 2024-05-16 International Business Machines Corporation Fast switching mram having an aluminum-manganese-germanium free layer combined with a chromium diffusion barrier

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US7190557B2 (en) 2004-04-14 2007-03-13 Hitachi Global Storage Technologies Netherlands B.V. Current-in-the-plane spin valve magnetoresistive sensor with dual metal oxide capping layers
US7770282B2 (en) 2005-09-01 2010-08-10 Hitachi Global Storage Technologies Netherlands B.V. Method of making a magnetic sensing device having an insulator structure
JP5768498B2 (ja) 2011-05-23 2015-08-26 ソニー株式会社 記憶素子、記憶装置
US8878318B2 (en) 2011-09-24 2014-11-04 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and method for a MRAM device with an oxygen absorbing cap layer
US9178136B2 (en) 2012-08-16 2015-11-03 Taiwan Semiconductor Manufacturing Company, Ltd. Magnetoresistive random access memory cell and fabricating the same
US9147833B2 (en) 2013-07-05 2015-09-29 Headway Technologies, Inc. Hybridized oxide capping layer for perpendicular magnetic anisotropy
US9425387B1 (en) 2015-09-08 2016-08-23 Headway Technologies, Inc. Magnetic element with perpendicular magnetic anisotropy for high coercivity after high temperature annealing
US10522744B2 (en) 2017-10-10 2019-12-31 Taiwan Semiconductor Manufacturing Company, Ltd. High thermal stability by doping of oxide capping layer for spin torque transfer (STT) magnetic random access memory (MRAM) applications
DE112019003363B4 (de) 2018-07-04 2024-12-05 Sony Semiconductor Solutions Corporation Elemente mit magnetischem tunnelübergang und halbleitervorrichtung
US11165012B2 (en) 2018-10-29 2021-11-02 Taiwan Semiconductor Manufacturing Co., Ltd. Magnetic device and magnetic random access memory
US11009570B2 (en) 2018-11-16 2021-05-18 Samsung Electronics Co., Ltd. Hybrid oxide/metal cap layer for boron-free free layer
US11264566B2 (en) 2019-06-21 2022-03-01 Headway Technologies, Inc. Magnetic element with perpendicular magnetic anisotropy (PMA) and improved coercivity field (Hc)/switching current ratio
US11264560B2 (en) 2019-06-21 2022-03-01 Headway Technologies, Inc. Minimal thickness, low switching voltage magnetic free layers using an oxidation control layer and magnetic moment tuning layer for spintronic applications
US20210159393A1 (en) 2019-11-26 2021-05-27 Globalfoundries Singapore Pte. Ltd. Magnetic tunnel junction devices and methods of forming thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI913954B (zh) 2024-01-18 2026-02-01 台灣積體電路製造股份有限公司 記憶體裝置及操作自旋軌道矩磁阻式隨機存取記憶體單元的矩陣的方法
US12573438B2 (en) 2024-01-18 2026-03-10 Taiwan Semiconductor Manufacturing Company, Ltd. Device having rows of MRAM cells configured for concurrent writing and reading

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Publication number Publication date
US12114578B2 (en) 2024-10-08
JP2023083208A (ja) 2023-06-15
EP4192222A1 (en) 2023-06-07
KR20230084003A (ko) 2023-06-12
CN116234416A (zh) 2023-06-06
EP4192222B1 (en) 2025-05-14
US20230180627A1 (en) 2023-06-08

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