KR20250090373A - 자기 터널 접합 구조들 및 그 제조 방법들 - Google Patents

자기 터널 접합 구조들 및 그 제조 방법들 Download PDF

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Publication number
KR20250090373A
KR20250090373A KR1020257018783A KR20257018783A KR20250090373A KR 20250090373 A KR20250090373 A KR 20250090373A KR 1020257018783 A KR1020257018783 A KR 1020257018783A KR 20257018783 A KR20257018783 A KR 20257018783A KR 20250090373 A KR20250090373 A KR 20250090373A
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South Korea
Prior art keywords
layer
pinning
chromium
laminate
seed
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KR1020257018783A
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English (en)
Korean (ko)
Inventor
린 수에
치 홍 칭
롱준 왕
마헨드라 파칼라
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어플라이드 머티어리얼스, 인코포레이티드
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Publication of KR20250090373A publication Critical patent/KR20250090373A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/10—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having two electrodes, e.g. diodes or MIM elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Thin Magnetic Films (AREA)
KR1020257018783A 2018-05-08 2019-04-05 자기 터널 접합 구조들 및 그 제조 방법들 Pending KR20250090373A (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US201862668559P 2018-05-08 2018-05-08
US62/668,559 2018-05-08
US16/351,850 US10944050B2 (en) 2018-05-08 2019-03-13 Magnetic tunnel junction structures and methods of manufacture thereof
US16/351,850 2019-03-13
PCT/US2019/026079 WO2019217014A1 (en) 2018-05-08 2019-04-05 Magnetic tunnel junction structures and methods of manufacture thereof
KR1020207035261A KR102819169B1 (ko) 2018-05-08 2019-04-05 자기 터널 접합 구조들 및 그 제조 방법들

Related Parent Applications (1)

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KR1020207035261A Division KR102819169B1 (ko) 2018-05-08 2019-04-05 자기 터널 접합 구조들 및 그 제조 방법들

Publications (1)

Publication Number Publication Date
KR20250090373A true KR20250090373A (ko) 2025-06-19

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KR1020257018783A Pending KR20250090373A (ko) 2018-05-08 2019-04-05 자기 터널 접합 구조들 및 그 제조 방법들
KR1020207035261A Active KR102819169B1 (ko) 2018-05-08 2019-04-05 자기 터널 접합 구조들 및 그 제조 방법들

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Country Status (6)

Country Link
US (2) US10944050B2 (https=)
JP (2) JP7507693B2 (https=)
KR (2) KR20250090373A (https=)
CN (1) CN112166509B (https=)
TW (2) TWI821274B (https=)
WO (1) WO2019217014A1 (https=)

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US10957849B2 (en) 2018-05-24 2021-03-23 Applied Materials, Inc. Magnetic tunnel junctions with coupling-pinning layer lattice matching
US10910557B2 (en) 2018-09-14 2021-02-02 Applied Materials, Inc. Apparatus and methods of fabricating a magneto-resistive random access memory (MRAM) device
CN113346006B (zh) * 2020-03-02 2023-03-21 上海磁宇信息科技有限公司 磁性隧道结结构及其磁性随机存储器
US20230039108A1 (en) * 2021-08-03 2023-02-09 Yimin Guo Perpendicular mtj element having a soft-magnetic adjacent layer and methods of making the same
US12022743B2 (en) * 2021-08-06 2024-06-25 Taiwan Semiconductor Manufacturing Company Ltd. Magnetic tunnel junction (MTJ) element and its fabrication process
US12382839B2 (en) 2022-01-07 2025-08-05 Samsung Electronics Co., Ltd. Magnetic tunneling junction device and memory device including the same

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JP2005079487A (ja) * 2003-09-03 2005-03-24 Fujitsu Ltd 磁気抵抗効果膜並びにこれを用いた磁気抵抗効果ヘッドおよび固体メモリ
US6960480B1 (en) 2004-05-19 2005-11-01 Headway Technologies, Inc. Method of forming a magnetic tunneling junction (MTJ) MRAM device and a tunneling magnetoresistive (TMR) read head
US7611912B2 (en) 2004-06-30 2009-11-03 Headway Technologies, Inc. Underlayer for high performance magnetic tunneling junction MRAM
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Also Published As

Publication number Publication date
JP2024150436A (ja) 2024-10-23
TWI821274B (zh) 2023-11-11
US11552244B2 (en) 2023-01-10
US10944050B2 (en) 2021-03-09
WO2019217014A1 (en) 2019-11-14
US20210193914A1 (en) 2021-06-24
KR102819169B1 (ko) 2025-06-12
JP7507693B2 (ja) 2024-06-28
TW202405802A (zh) 2024-02-01
TW201947589A (zh) 2019-12-16
CN112166509B (zh) 2024-11-29
CN112166509A (zh) 2021-01-01
JP2021523569A (ja) 2021-09-02
US20190348600A1 (en) 2019-11-14
KR20200141528A (ko) 2020-12-18
TWI846619B (zh) 2024-06-21

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