TWI821274B - 磁性穿隧接合結構及其製造方法 - Google Patents

磁性穿隧接合結構及其製造方法 Download PDF

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Publication number
TWI821274B
TWI821274B TW108113704A TW108113704A TWI821274B TW I821274 B TWI821274 B TW I821274B TW 108113704 A TW108113704 A TW 108113704A TW 108113704 A TW108113704 A TW 108113704A TW I821274 B TWI821274 B TW I821274B
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Taiwan
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layer
pinned
cobalt
magnetic
thickness
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TW108113704A
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English (en)
Chinese (zh)
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TW201947589A (zh
Inventor
薛林
志康 程
汪榮軍
瑪亨德拉 帕卡拉
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美商應用材料股份有限公司
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/10—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having two electrodes, e.g. diodes or MIM elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Thin Magnetic Films (AREA)
TW108113704A 2018-05-08 2019-04-19 磁性穿隧接合結構及其製造方法 TWI821274B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201862668559P 2018-05-08 2018-05-08
US62/668,559 2018-05-08
US16/351,850 US10944050B2 (en) 2018-05-08 2019-03-13 Magnetic tunnel junction structures and methods of manufacture thereof
US16/351,850 2019-03-13

Publications (2)

Publication Number Publication Date
TW201947589A TW201947589A (zh) 2019-12-16
TWI821274B true TWI821274B (zh) 2023-11-11

Family

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TW108113704A TWI821274B (zh) 2018-05-08 2019-04-19 磁性穿隧接合結構及其製造方法
TW112138691A TWI846619B (zh) 2018-05-08 2019-04-19 磁性穿隧接合結構及其製造方法

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Country Status (6)

Country Link
US (2) US10944050B2 (https=)
JP (2) JP7507693B2 (https=)
KR (2) KR20250090373A (https=)
CN (1) CN112166509B (https=)
TW (2) TWI821274B (https=)
WO (1) WO2019217014A1 (https=)

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US10957849B2 (en) 2018-05-24 2021-03-23 Applied Materials, Inc. Magnetic tunnel junctions with coupling-pinning layer lattice matching
US10910557B2 (en) 2018-09-14 2021-02-02 Applied Materials, Inc. Apparatus and methods of fabricating a magneto-resistive random access memory (MRAM) device
CN113346006B (zh) * 2020-03-02 2023-03-21 上海磁宇信息科技有限公司 磁性隧道结结构及其磁性随机存储器
US20230039108A1 (en) * 2021-08-03 2023-02-09 Yimin Guo Perpendicular mtj element having a soft-magnetic adjacent layer and methods of making the same
US12022743B2 (en) * 2021-08-06 2024-06-25 Taiwan Semiconductor Manufacturing Company Ltd. Magnetic tunnel junction (MTJ) element and its fabrication process
US12382839B2 (en) 2022-01-07 2025-08-05 Samsung Electronics Co., Ltd. Magnetic tunneling junction device and memory device including the same

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US20160141496A1 (en) * 2014-11-18 2016-05-19 Yongsung PARK Method and processing apparatus for fabricating a magnetic resistive random access memory device
CN104282832B (zh) * 2013-07-03 2017-12-19 三星电子株式会社 磁性存储装置及其形成方法

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US20100176470A1 (en) * 2009-01-14 2010-07-15 Magic Technologies, Inc. Novel free layer/capping layer for high performance mram mtj
CN104282832B (zh) * 2013-07-03 2017-12-19 三星电子株式会社 磁性存储装置及其形成方法
US20160141496A1 (en) * 2014-11-18 2016-05-19 Yongsung PARK Method and processing apparatus for fabricating a magnetic resistive random access memory device
US9236560B1 (en) * 2014-12-08 2016-01-12 Western Digital (Fremont), Llc Spin transfer torque tunneling magnetoresistive device having a laminated free layer with perpendicular magnetic anisotropy

Also Published As

Publication number Publication date
JP2024150436A (ja) 2024-10-23
US11552244B2 (en) 2023-01-10
US10944050B2 (en) 2021-03-09
WO2019217014A1 (en) 2019-11-14
US20210193914A1 (en) 2021-06-24
KR102819169B1 (ko) 2025-06-12
JP7507693B2 (ja) 2024-06-28
TW202405802A (zh) 2024-02-01
TW201947589A (zh) 2019-12-16
CN112166509B (zh) 2024-11-29
CN112166509A (zh) 2021-01-01
JP2021523569A (ja) 2021-09-02
KR20250090373A (ko) 2025-06-19
US20190348600A1 (en) 2019-11-14
KR20200141528A (ko) 2020-12-18
TWI846619B (zh) 2024-06-21

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