CN112166509B - 磁性隧道结结构及其制造方法 - Google Patents

磁性隧道结结构及其制造方法 Download PDF

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Publication number
CN112166509B
CN112166509B CN201980030970.7A CN201980030970A CN112166509B CN 112166509 B CN112166509 B CN 112166509B CN 201980030970 A CN201980030970 A CN 201980030970A CN 112166509 B CN112166509 B CN 112166509B
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layer
pinning
interlayer
layers
magnetic
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CN112166509A (zh
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薛林
程志康
汪荣军
马亨德拉·帕卡拉
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Applied Materials Inc
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Applied Materials Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/10—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having two electrodes, e.g. diodes or MIM elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Thin Magnetic Films (AREA)
CN201980030970.7A 2018-05-08 2019-04-05 磁性隧道结结构及其制造方法 Active CN112166509B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201862668559P 2018-05-08 2018-05-08
US62/668,559 2018-05-08
US16/351,850 US10944050B2 (en) 2018-05-08 2019-03-13 Magnetic tunnel junction structures and methods of manufacture thereof
US16/351,850 2019-03-13
PCT/US2019/026079 WO2019217014A1 (en) 2018-05-08 2019-04-05 Magnetic tunnel junction structures and methods of manufacture thereof

Publications (2)

Publication Number Publication Date
CN112166509A CN112166509A (zh) 2021-01-01
CN112166509B true CN112166509B (zh) 2024-11-29

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US (2) US10944050B2 (https=)
JP (2) JP7507693B2 (https=)
KR (2) KR20250090373A (https=)
CN (1) CN112166509B (https=)
TW (2) TWI821274B (https=)
WO (1) WO2019217014A1 (https=)

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US12022743B2 (en) * 2021-08-06 2024-06-25 Taiwan Semiconductor Manufacturing Company Ltd. Magnetic tunnel junction (MTJ) element and its fabrication process
US12382839B2 (en) 2022-01-07 2025-08-05 Samsung Electronics Co., Ltd. Magnetic tunneling junction device and memory device including the same

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CN105679930A (zh) * 2014-12-08 2016-06-15 西部数据（弗里蒙特）公司 具有附带垂直磁各向异性的层压自由层的自旋转移转矩隧道磁阻装置

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JP2024150436A (ja) 2024-10-23
TWI821274B (zh) 2023-11-11
US11552244B2 (en) 2023-01-10
US10944050B2 (en) 2021-03-09
WO2019217014A1 (en) 2019-11-14
US20210193914A1 (en) 2021-06-24
KR102819169B1 (ko) 2025-06-12
JP7507693B2 (ja) 2024-06-28
TW202405802A (zh) 2024-02-01
TW201947589A (zh) 2019-12-16
CN112166509A (zh) 2021-01-01
JP2021523569A (ja) 2021-09-02
KR20250090373A (ko) 2025-06-19
US20190348600A1 (en) 2019-11-14
KR20200141528A (ko) 2020-12-18
TWI846619B (zh) 2024-06-21

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