JP7507693B2 - 磁気トンネル接合構造及びその製造方法 - Google Patents

磁気トンネル接合構造及びその製造方法 Download PDF

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JP7507693B2
JP7507693B2 JP2020562644A JP2020562644A JP7507693B2 JP 7507693 B2 JP7507693 B2 JP 7507693B2 JP 2020562644 A JP2020562644 A JP 2020562644A JP 2020562644 A JP2020562644 A JP 2020562644A JP 7507693 B2 JP7507693 B2 JP 7507693B2
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pinning
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pinning layer
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JPWO2019217014A5 (https=
JP2021523569A (ja
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リン シュエ，
チー ホン チン，
ロンジュン ワン，
マヘンドラ パカラ，
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Applied Materials Inc
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Applied Materials Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/10—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having two electrodes, e.g. diodes or MIM elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Thin Magnetic Films (AREA)
JP2020562644A 2018-05-08 2019-04-05 磁気トンネル接合構造及びその製造方法 Active JP7507693B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2024097845A JP2024150436A (ja) 2018-05-08 2024-06-18 磁気トンネル接合構造及びその製造方法

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201862668559P 2018-05-08 2018-05-08
US62/668,559 2018-05-08
US16/351,850 US10944050B2 (en) 2018-05-08 2019-03-13 Magnetic tunnel junction structures and methods of manufacture thereof
US16/351,850 2019-03-13
PCT/US2019/026079 WO2019217014A1 (en) 2018-05-08 2019-04-05 Magnetic tunnel junction structures and methods of manufacture thereof

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JP2021523569A JP2021523569A (ja) 2021-09-02
JPWO2019217014A5 JPWO2019217014A5 (https=) 2022-04-08
JP2021523569A5 JP2021523569A5 (https=) 2022-04-08
JP7507693B2 true JP7507693B2 (ja) 2024-06-28

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JP2024097845A Pending JP2024150436A (ja) 2018-05-08 2024-06-18 磁気トンネル接合構造及びその製造方法

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US (2) US10944050B2 (https=)
JP (2) JP7507693B2 (https=)
KR (2) KR20250090373A (https=)
CN (1) CN112166509B (https=)
TW (2) TWI821274B (https=)
WO (1) WO2019217014A1 (https=)

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JP2019021751A (ja) 2017-07-14 2019-02-07 Tdk株式会社 磁気抵抗効果素子及びその製造方法
US10957849B2 (en) 2018-05-24 2021-03-23 Applied Materials, Inc. Magnetic tunnel junctions with coupling-pinning layer lattice matching
US10910557B2 (en) 2018-09-14 2021-02-02 Applied Materials, Inc. Apparatus and methods of fabricating a magneto-resistive random access memory (MRAM) device
CN113346006B (zh) * 2020-03-02 2023-03-21 上海磁宇信息科技有限公司 磁性隧道结结构及其磁性随机存储器
US20230039108A1 (en) * 2021-08-03 2023-02-09 Yimin Guo Perpendicular mtj element having a soft-magnetic adjacent layer and methods of making the same
US12022743B2 (en) * 2021-08-06 2024-06-25 Taiwan Semiconductor Manufacturing Company Ltd. Magnetic tunnel junction (MTJ) element and its fabrication process
US12382839B2 (en) 2022-01-07 2025-08-05 Samsung Electronics Co., Ltd. Magnetic tunneling junction device and memory device including the same

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JP2015038998A (ja) 2014-09-12 2015-02-26 株式会社東芝 磁気記録素子及び磁気メモリ
WO2016189772A1 (ja) 2015-05-22 2016-12-01 キヤノンアネルバ株式会社 磁気抵抗効果素子

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JP2003264325A (ja) 2002-01-16 2003-09-19 Headway Technologies Inc ボトムスピンバルブ磁気抵抗効果センサ素子およびその製造方法
JP2007142364A (ja) 2005-10-19 2007-06-07 Toshiba Corp 磁気抵抗効果素子、磁気ランダムアクセスメモリ、電子カード及び電子装置
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JP2024150436A (ja) 2024-10-23
TWI821274B (zh) 2023-11-11
US11552244B2 (en) 2023-01-10
US10944050B2 (en) 2021-03-09
WO2019217014A1 (en) 2019-11-14
US20210193914A1 (en) 2021-06-24
KR102819169B1 (ko) 2025-06-12
TW202405802A (zh) 2024-02-01
TW201947589A (zh) 2019-12-16
CN112166509B (zh) 2024-11-29
CN112166509A (zh) 2021-01-01
JP2021523569A (ja) 2021-09-02
KR20250090373A (ko) 2025-06-19
US20190348600A1 (en) 2019-11-14
KR20200141528A (ko) 2020-12-18
TWI846619B (zh) 2024-06-21

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