JPWO2019217014A5 - - Google Patents
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- JPWO2019217014A5 JPWO2019217014A5 JP2020562644A JP2020562644A JPWO2019217014A5 JP WO2019217014 A5 JPWO2019217014 A5 JP WO2019217014A5 JP 2020562644 A JP2020562644 A JP 2020562644A JP 2020562644 A JP2020562644 A JP 2020562644A JP WO2019217014 A5 JPWO2019217014 A5 JP WO2019217014A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- pinning
- thickness
- cobalt
- double layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 229910017052 cobalt Inorganic materials 0.000 claims 14
- 239000010941 cobalt Substances 0.000 claims 14
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 14
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 12
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims 12
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 12
- 230000000903 blocking effect Effects 0.000 claims 8
- 230000004888 barrier function Effects 0.000 claims 6
- 239000011651 chromium Substances 0.000 claims 6
- 229910052741 iridium Inorganic materials 0.000 claims 4
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims 4
- 229910052759 nickel Inorganic materials 0.000 claims 4
- 229910052763 palladium Inorganic materials 0.000 claims 4
- 229910052697 platinum Inorganic materials 0.000 claims 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 3
- 229910052804 chromium Inorganic materials 0.000 claims 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 2
- 229910052750 molybdenum Inorganic materials 0.000 claims 2
- 239000011733 molybdenum Substances 0.000 claims 2
- 229910052715 tantalum Inorganic materials 0.000 claims 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 2
- 229910052721 tungsten Inorganic materials 0.000 claims 2
- 239000010937 tungsten Substances 0.000 claims 2
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2024097845A JP2024150436A (ja) | 2018-05-08 | 2024-06-18 | 磁気トンネル接合構造及びその製造方法 |
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201862668559P | 2018-05-08 | 2018-05-08 | |
| US62/668,559 | 2018-05-08 | ||
| US16/351,850 US10944050B2 (en) | 2018-05-08 | 2019-03-13 | Magnetic tunnel junction structures and methods of manufacture thereof |
| US16/351,850 | 2019-03-13 | ||
| PCT/US2019/026079 WO2019217014A1 (en) | 2018-05-08 | 2019-04-05 | Magnetic tunnel junction structures and methods of manufacture thereof |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024097845A Division JP2024150436A (ja) | 2018-05-08 | 2024-06-18 | 磁気トンネル接合構造及びその製造方法 |
Publications (4)
| Publication Number | Publication Date |
|---|---|
| JP2021523569A JP2021523569A (ja) | 2021-09-02 |
| JPWO2019217014A5 true JPWO2019217014A5 (https=) | 2022-04-08 |
| JP2021523569A5 JP2021523569A5 (https=) | 2022-04-08 |
| JP7507693B2 JP7507693B2 (ja) | 2024-06-28 |
Family
ID=68463314
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020562644A Active JP7507693B2 (ja) | 2018-05-08 | 2019-04-05 | 磁気トンネル接合構造及びその製造方法 |
| JP2024097845A Pending JP2024150436A (ja) | 2018-05-08 | 2024-06-18 | 磁気トンネル接合構造及びその製造方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024097845A Pending JP2024150436A (ja) | 2018-05-08 | 2024-06-18 | 磁気トンネル接合構造及びその製造方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US10944050B2 (https=) |
| JP (2) | JP7507693B2 (https=) |
| KR (2) | KR20250090373A (https=) |
| CN (1) | CN112166509B (https=) |
| TW (2) | TWI821274B (https=) |
| WO (1) | WO2019217014A1 (https=) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2019021751A (ja) | 2017-07-14 | 2019-02-07 | Tdk株式会社 | 磁気抵抗効果素子及びその製造方法 |
| US10957849B2 (en) | 2018-05-24 | 2021-03-23 | Applied Materials, Inc. | Magnetic tunnel junctions with coupling-pinning layer lattice matching |
| US10910557B2 (en) | 2018-09-14 | 2021-02-02 | Applied Materials, Inc. | Apparatus and methods of fabricating a magneto-resistive random access memory (MRAM) device |
| CN113346006B (zh) * | 2020-03-02 | 2023-03-21 | 上海磁宇信息科技有限公司 | 磁性隧道结结构及其磁性随机存储器 |
| US20230039108A1 (en) * | 2021-08-03 | 2023-02-09 | Yimin Guo | Perpendicular mtj element having a soft-magnetic adjacent layer and methods of making the same |
| US12022743B2 (en) * | 2021-08-06 | 2024-06-25 | Taiwan Semiconductor Manufacturing Company Ltd. | Magnetic tunnel junction (MTJ) element and its fabrication process |
| US12382839B2 (en) | 2022-01-07 | 2025-08-05 | Samsung Electronics Co., Ltd. | Magnetic tunneling junction device and memory device including the same |
Family Cites Families (35)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6773515B2 (en) * | 2002-01-16 | 2004-08-10 | Headway Technologies, Inc. | FeTa nano-oxide layer as a capping layer for enhancement of giant magnetoresistance in bottom spin valve structures |
| JP2005079487A (ja) * | 2003-09-03 | 2005-03-24 | Fujitsu Ltd | 磁気抵抗効果膜並びにこれを用いた磁気抵抗効果ヘッドおよび固体メモリ |
| US6960480B1 (en) | 2004-05-19 | 2005-11-01 | Headway Technologies, Inc. | Method of forming a magnetic tunneling junction (MTJ) MRAM device and a tunneling magnetoresistive (TMR) read head |
| US7611912B2 (en) | 2004-06-30 | 2009-11-03 | Headway Technologies, Inc. | Underlayer for high performance magnetic tunneling junction MRAM |
| US7067330B2 (en) | 2004-07-16 | 2006-06-27 | Headway Technologies, Inc. | Magnetic random access memory array with thin conduction electrical read and write lines |
| US7098495B2 (en) * | 2004-07-26 | 2006-08-29 | Freescale Semiconducor, Inc. | Magnetic tunnel junction element structures and methods for fabricating the same |
| JP4444241B2 (ja) * | 2005-10-19 | 2010-03-31 | 株式会社東芝 | 磁気抵抗効果素子、磁気ランダムアクセスメモリ、電子カード及び電子装置 |
| US8063459B2 (en) | 2007-02-12 | 2011-11-22 | Avalanche Technologies, Inc. | Non-volatile magnetic memory element with graded layer |
| US7528457B2 (en) * | 2006-04-14 | 2009-05-05 | Magic Technologies, Inc. | Method to form a nonmagnetic cap for the NiFe(free) MTJ stack to enhance dR/R |
| US8372661B2 (en) * | 2007-10-31 | 2013-02-12 | Magic Technologies, Inc. | High performance MTJ element for conventional MRAM and for STT-RAM and a method for making the same |
| US8164862B2 (en) | 2008-04-02 | 2012-04-24 | Headway Technologies, Inc. | Seed layer for TMR or CPP-GMR sensor |
| US7808027B2 (en) * | 2009-01-14 | 2010-10-05 | Magic Technologies, Inc. | Free layer/capping layer for high performance MRAM MTJ |
| US8609262B2 (en) | 2009-07-17 | 2013-12-17 | Magic Technologies, Inc. | Structure and method to fabricate high performance MTJ devices for spin-transfer torque (STT)-RAM application |
| US8922956B2 (en) * | 2010-06-04 | 2014-12-30 | Seagate Technology Llc | Tunneling magneto-resistive sensors with buffer layers |
| US8604572B2 (en) * | 2010-06-14 | 2013-12-10 | Regents Of The University Of Minnesota | Magnetic tunnel junction device |
| US9245608B2 (en) * | 2011-09-22 | 2016-01-26 | Qualcomm Incorporated | Thermally tolerant perpendicular magnetic anisotropy coupled elements for spin-transfer torque switching device |
| JP5856490B2 (ja) * | 2012-01-20 | 2016-02-09 | ルネサスエレクトロニクス株式会社 | 磁気抵抗効果素子及び磁気メモリ |
| KR20140008745A (ko) * | 2012-07-11 | 2014-01-22 | 삼성전자주식회사 | 자기 메모리 장치 |
| US9490054B2 (en) | 2012-10-11 | 2016-11-08 | Headway Technologies, Inc. | Seed layer for multilayer magnetic materials |
| KR102114285B1 (ko) | 2013-04-09 | 2020-05-22 | 에스케이하이닉스 주식회사 | 반도체 장치 및 이 반도체 장치를 포함하는 마이크로프로세서, 프로세서, 시스템, 데이터 저장 시스템 및 메모리 시스템 |
| US9082960B2 (en) * | 2013-04-16 | 2015-07-14 | Headway Technologies, Inc. | Fully compensated synthetic antiferromagnet for spintronics applications |
| JP6251130B2 (ja) * | 2013-06-17 | 2017-12-20 | アイメックＩｍｅｃ | 磁気メモリ素子 |
| KR102082328B1 (ko) * | 2013-07-03 | 2020-02-27 | 삼성전자주식회사 | 수직 자기터널접합을 구비하는 자기 기억 소자 |
| WO2015062174A1 (zh) * | 2013-11-01 | 2015-05-07 | 中国科学院物理研究所 | 一种用于温度传感器的纳米磁性多层膜及其制造方法 |
| KR102124361B1 (ko) | 2013-11-18 | 2020-06-19 | 삼성전자주식회사 | 수직 자기터널접합을 포함하는 자기 기억 소자 |
| US10050083B2 (en) * | 2014-05-21 | 2018-08-14 | Avalanche Technology, Inc. | Magnetic structure with multilayered seed |
| JP2015038998A (ja) * | 2014-09-12 | 2015-02-26 | 株式会社東芝 | 磁気記録素子及び磁気メモリ |
| KR102287755B1 (ko) * | 2014-11-18 | 2021-08-09 | 삼성전자주식회사 | 자기 저항 메모리 소자를 형성하는 방법 |
| US9236560B1 (en) * | 2014-12-08 | 2016-01-12 | Western Digital (Fremont), Llc | Spin transfer torque tunneling magnetoresistive device having a laminated free layer with perpendicular magnetic anisotropy |
| US9634237B2 (en) | 2014-12-23 | 2017-04-25 | Qualcomm Incorporated | Ultrathin perpendicular pinned layer structure for magnetic tunneling junction devices |
| WO2016148394A1 (ko) | 2015-03-18 | 2016-09-22 | 한양대학교 산학협력단 | 메모리 소자 |
| KR101800237B1 (ko) * | 2015-05-22 | 2017-11-22 | 캐논 아네르바 가부시키가이샤 | 자기저항 효과 소자 |
| US10522739B2 (en) | 2015-06-26 | 2019-12-31 | Intel Corporation | Perpendicular magnetic memory with reduced switching current |
| WO2017135767A1 (ko) | 2016-02-05 | 2017-08-10 | 한양대학교 산학협력단 | 메모리 소자 |
| JP2018032805A (ja) * | 2016-08-26 | 2018-03-01 | ソニー株式会社 | 磁気抵抗素子及び電子デバイス |
-
2019
- 2019-03-13 US US16/351,850 patent/US10944050B2/en active Active
- 2019-04-05 KR KR1020257018783A patent/KR20250090373A/ko active Pending
- 2019-04-05 WO PCT/US2019/026079 patent/WO2019217014A1/en not_active Ceased
- 2019-04-05 JP JP2020562644A patent/JP7507693B2/ja active Active
- 2019-04-05 KR KR1020207035261A patent/KR102819169B1/ko active Active
- 2019-04-05 CN CN201980030970.7A patent/CN112166509B/zh active Active
- 2019-04-19 TW TW108113704A patent/TWI821274B/zh active
- 2019-04-19 TW TW112138691A patent/TWI846619B/zh not_active IP Right Cessation
-
2021
- 2021-03-05 US US17/193,966 patent/US11552244B2/en active Active
-
2024
- 2024-06-18 JP JP2024097845A patent/JP2024150436A/ja active Pending
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