JP2021190496A5 - - Google Patents
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- Publication number
- JP2021190496A5 JP2021190496A5 JP2020092235A JP2020092235A JP2021190496A5 JP 2021190496 A5 JP2021190496 A5 JP 2021190496A5 JP 2020092235 A JP2020092235 A JP 2020092235A JP 2020092235 A JP2020092235 A JP 2020092235A JP 2021190496 A5 JP2021190496 A5 JP 2021190496A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- region
- semiconductor
- layer
- diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 claims description 44
- 239000000758 substrate Substances 0.000 claims 7
- 239000013078 crystal Substances 0.000 claims 4
- 230000007547 defect Effects 0.000 claims 4
- 239000010410 layer Substances 0.000 description 28
- 239000012535 impurity Substances 0.000 description 8
- 230000004888 barrier function Effects 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 239000011229 interlayer Substances 0.000 description 3
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020092235A JP7403386B2 (ja) | 2020-05-27 | 2020-05-27 | 半導体装置 |
| US17/168,750 US12159944B2 (en) | 2020-05-27 | 2021-02-05 | RC-IGBT with lifetime control layer |
| DE102021107989.6A DE102021107989A1 (de) | 2020-05-27 | 2021-03-30 | Halbleitervorrichtung |
| CN202110559128.1A CN113745312B (zh) | 2020-05-27 | 2021-05-21 | 半导体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020092235A JP7403386B2 (ja) | 2020-05-27 | 2020-05-27 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2021190496A JP2021190496A (ja) | 2021-12-13 |
| JP2021190496A5 true JP2021190496A5 (https=) | 2022-06-30 |
| JP7403386B2 JP7403386B2 (ja) | 2023-12-22 |
Family
ID=78509162
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020092235A Active JP7403386B2 (ja) | 2020-05-27 | 2020-05-27 | 半導体装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US12159944B2 (https=) |
| JP (1) | JP7403386B2 (https=) |
| CN (1) | CN113745312B (https=) |
| DE (1) | DE102021107989A1 (https=) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPWO2020121857A1 (ja) * | 2018-12-12 | 2021-11-04 | 浜松ホトニクス株式会社 | 光検出装置及び光検出装置の製造方法 |
| CN117581383A (zh) * | 2021-07-20 | 2024-02-20 | 株式会社电装 | 半导体装置 |
| JP7527256B2 (ja) * | 2021-09-06 | 2024-08-02 | 三菱電機株式会社 | 半導体装置及び半導体装置の制御方法 |
| CN116805627A (zh) * | 2022-03-23 | 2023-09-26 | 三垦电气株式会社 | 半导体装置 |
| DE102022127527A1 (de) * | 2022-10-19 | 2024-04-25 | Infineon Technologies Austria Ag | Rc-igbt und herstellungsverfahren für einen rc-igbt |
| JPWO2024171683A1 (https=) * | 2023-02-14 | 2024-08-22 | ||
| CN117038451B (zh) * | 2023-10-09 | 2024-02-20 | 深圳市锐骏半导体股份有限公司 | 沟槽栅igbt器件、制作方法及仿真方法 |
| EP4672340A1 (en) | 2024-06-26 | 2025-12-31 | Nexperia B.V. | SEMICONDUCTOR DEVICE AND METHOD FOR IONIC OPERATION IN A SEMICONDUCTOR DEVICE |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011210800A (ja) * | 2010-03-29 | 2011-10-20 | Toyota Motor Corp | 半導体装置 |
| JP5190485B2 (ja) * | 2010-04-02 | 2013-04-24 | 株式会社豊田中央研究所 | 半導体装置 |
| JP6078961B2 (ja) * | 2012-03-19 | 2017-02-15 | 富士電機株式会社 | 半導体装置の製造方法 |
| JP6119593B2 (ja) * | 2013-12-17 | 2017-04-26 | トヨタ自動車株式会社 | 半導体装置 |
| JP6107767B2 (ja) * | 2013-12-27 | 2017-04-05 | トヨタ自動車株式会社 | 半導体装置とその製造方法 |
| JP6277814B2 (ja) | 2014-03-25 | 2018-02-14 | 株式会社デンソー | 半導体装置 |
| JP6222140B2 (ja) | 2015-03-04 | 2017-11-01 | トヨタ自動車株式会社 | 半導体装置 |
| DE112018001627B4 (de) | 2017-11-15 | 2024-07-11 | Fuji Electric Co., Ltd. | Halbleitervorrichtung |
| CN111033751B (zh) * | 2018-02-14 | 2023-08-18 | 富士电机株式会社 | 半导体装置 |
| JP6958740B2 (ja) | 2018-08-14 | 2021-11-02 | 富士電機株式会社 | 半導体装置および製造方法 |
-
2020
- 2020-05-27 JP JP2020092235A patent/JP7403386B2/ja active Active
-
2021
- 2021-02-05 US US17/168,750 patent/US12159944B2/en active Active
- 2021-03-30 DE DE102021107989.6A patent/DE102021107989A1/de active Pending
- 2021-05-21 CN CN202110559128.1A patent/CN113745312B/zh active Active
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