JP2021072329A5 - - Google Patents

Download PDF

Info

Publication number
JP2021072329A5
JP2021072329A5 JP2019197065A JP2019197065A JP2021072329A5 JP 2021072329 A5 JP2021072329 A5 JP 2021072329A5 JP 2019197065 A JP2019197065 A JP 2019197065A JP 2019197065 A JP2019197065 A JP 2019197065A JP 2021072329 A5 JP2021072329 A5 JP 2021072329A5
Authority
JP
Japan
Prior art keywords
power semiconductor
concerns
semiconductor device
sectional drawing
sealing resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2019197065A
Other languages
English (en)
Japanese (ja)
Other versions
JP2021072329A (ja
JP7224272B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2019197065A priority Critical patent/JP7224272B2/ja
Priority claimed from JP2019197065A external-priority patent/JP7224272B2/ja
Priority to US16/993,917 priority patent/US11742251B2/en
Priority to DE102020125705.8A priority patent/DE102020125705A1/de
Priority to CN202011146157.7A priority patent/CN112750801B/zh
Publication of JP2021072329A publication Critical patent/JP2021072329A/ja
Publication of JP2021072329A5 publication Critical patent/JP2021072329A5/ja
Application granted granted Critical
Publication of JP7224272B2 publication Critical patent/JP7224272B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2019197065A 2019-10-30 2019-10-30 パワー半導体装置 Active JP7224272B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2019197065A JP7224272B2 (ja) 2019-10-30 2019-10-30 パワー半導体装置
US16/993,917 US11742251B2 (en) 2019-10-30 2020-08-14 Power semiconductor device including press-fit connection terminal
DE102020125705.8A DE102020125705A1 (de) 2019-10-30 2020-10-01 Leistungs-Halbleitervorrichtung
CN202011146157.7A CN112750801B (zh) 2019-10-30 2020-10-23 功率半导体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2019197065A JP7224272B2 (ja) 2019-10-30 2019-10-30 パワー半導体装置

Publications (3)

Publication Number Publication Date
JP2021072329A JP2021072329A (ja) 2021-05-06
JP2021072329A5 true JP2021072329A5 (enExample) 2021-12-02
JP7224272B2 JP7224272B2 (ja) 2023-02-17

Family

ID=75485442

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2019197065A Active JP7224272B2 (ja) 2019-10-30 2019-10-30 パワー半導体装置

Country Status (4)

Country Link
US (1) US11742251B2 (enExample)
JP (1) JP7224272B2 (enExample)
CN (1) CN112750801B (enExample)
DE (1) DE102020125705A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114361115B (zh) * 2021-12-31 2022-08-23 中山市木林森微电子有限公司 一种多芯片埋入式封装模块结构
CN114823546A (zh) * 2022-03-26 2022-07-29 华为数字能源技术有限公司 功率模块及其制造方法、功率变换器和供电设备
KR102655235B1 (ko) * 2022-12-20 2024-04-08 주식회사 현대케피코 커넥터 매립형 하우징 앗세이 적용 제어기
CN119695016B (zh) * 2025-02-24 2025-07-18 深圳市万联芯科技有限公司 一种集成电路芯片的封装结构及其方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006025453B4 (de) * 2006-05-31 2009-12-24 Infineon Technologies Ag Halbleiterschaltungsanordnung
JP2009081325A (ja) * 2007-09-27 2009-04-16 Sanyo Electric Co Ltd 回路装置
KR101463074B1 (ko) * 2008-01-10 2014-11-21 페어차일드코리아반도체 주식회사 리드리스 패키지
JP5136513B2 (ja) 2009-05-15 2013-02-06 トヨタ自動車株式会社 半導体装置
JP5583433B2 (ja) 2010-03-05 2014-09-03 株式会社ケーヒン 半導体装置
EP2538761B1 (en) * 2011-06-20 2014-01-29 STMicroelectronics Srl Intelligent Power Module and related assembling method
JP5633496B2 (ja) * 2011-09-29 2014-12-03 三菱電機株式会社 半導体装置及びその製造方法
KR101443985B1 (ko) * 2012-12-14 2014-11-03 삼성전기주식회사 전력 모듈 패키지
US9640453B2 (en) 2013-02-26 2017-05-02 Mitsubishi Electric Corporation Power semiconductor device
JP6119313B2 (ja) 2013-03-08 2017-04-26 富士電機株式会社 半導体装置
JP6380244B2 (ja) 2015-06-15 2018-08-29 三菱電機株式会社 半導体装置、電力変換装置
JP6455364B2 (ja) 2015-08-28 2019-01-23 三菱電機株式会社 半導体装置、インテリジェントパワーモジュールおよび電力変換装置
JP6451569B2 (ja) * 2015-09-14 2019-01-16 株式会社デンソー 電子装置
EP3217774B1 (en) 2016-03-08 2018-06-13 ABB Schweiz AG Semiconductor module
JP6559093B2 (ja) * 2016-05-16 2019-08-14 三菱電機株式会社 半導体装置
JP6705394B2 (ja) 2017-02-16 2020-06-03 三菱電機株式会社 半導体モジュールおよびインバータ装置
JP6806024B2 (ja) * 2017-10-03 2020-12-23 三菱電機株式会社 半導体装置
JP7099020B2 (ja) * 2018-04-10 2022-07-12 株式会社デンソー 圧入端子、及び圧入端子を含む電子装置

Similar Documents

Publication Publication Date Title
JP2021072329A5 (enExample)
JP6005306B2 (ja) 半導体装置
US20220246486A1 (en) Semiconductor package system and related methods
JP2020526930A5 (enExample)
JP2019067970A5 (enExample)
JP6645134B2 (ja) 半導体装置および半導体装置の製造方法
JP5306243B2 (ja) 半導体装置
JP2020161807A5 (enExample)
JP2004228286A (ja) 電力用半導体装置
JP2000340718A (ja) 電力用半導体装置
JP6370515B1 (ja) 半導体装置およびその製造方法
JP2018011005A5 (enExample)
JP2018117071A5 (enExample)
JP2008277954A (ja) パッケージデバイス
JPH0418468B2 (enExample)
JP4760351B2 (ja) 焦電センサの製造方法および焦電センサ
JP2007035913A (ja) 半導体装置
JP2003204036A (ja) 複合半導体デバイス用電極板
JP6321891B1 (ja) 電子装置及び電子装置の製造方法
JP3148885U (ja) 抵抗器
JP2024179082A5 (enExample)
JPH0258354A (ja) 半導体装置
JPS6347234B2 (enExample)
WO2024150397A1 (ja) 半導体装置
CN106486429A (zh) 半导体芯片封装结构及其封装方法