JP5583433B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP5583433B2 JP5583433B2 JP2010049507A JP2010049507A JP5583433B2 JP 5583433 B2 JP5583433 B2 JP 5583433B2 JP 2010049507 A JP2010049507 A JP 2010049507A JP 2010049507 A JP2010049507 A JP 2010049507A JP 5583433 B2 JP5583433 B2 JP 5583433B2
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- Prior art keywords
- circuit board
- power module
- terminal
- module
- press
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Description
ながら不要な変形等も生じないように、対応する回路基板等の対象部品に簡便かつ確実に組付け可能な半導体装置を提供することを目的とする。
ワーモジュールに対して電気的な接続自在な回路基板と、前記パワーモジュール及び前記回路基板とは別体の端子モジュールに設けられると共に前記パワーモジュールと前記回路基板とを電気的に接続する圧入端子と、前記パワーモジュールに設けられ、前記圧入端子が圧入される挿入部と、を備え、前記パワーモジュールと前記回路基板とは、前記端子モジュールを前記回路基板に実装すると共に前記端子モジュールを前記パワーモジュールと前記回路基板との間に介在させた状態で、前記圧入端子を前記挿入部に圧入することによって組付けられることを特徴とする半導体装置である。
対象部品に簡便かつ確実に組付けることができる。
バッテリ30に供給するAC/DCコンバータの機能を併せ持つ。なお、かかるPDU20は、必要に応じて、バッテリ30からの直流電流を交流電流に安定的に変換してモータ10に供給するDC/ACコンバータの機能のみを有していてもよい。
は、端子モジュール70の複数の信号ピン71と、制御回路基板80の制御素子と、が、制御回路基板80のプリント配線を介して、電気的に接続されている。
の上面に接着して、PDU20を組立ててもよい。
ら不要な変形等も生じないように、対応する回路基板等の対象部品に簡便かつ確実に組付けることができる。
形等も生じないように、対応する回路基板等の対象部品に簡便かつ確実に組付け可能な半導体装置を提供することができ、その汎用普遍的な性格からパワードライブユニット等に広範に適用され得るものと期待される。
20…パワードライブユニット(PDU)
30…バッテリ
40…パワーコントロールユニット(PCU)
50…パワーモジュール
51…筐体
52…基板
53…スイッチング素子
54…配線
55a、55b、55c…バスバー
56、57…挿入孔
58…筒状端子
59…接着材
60…ヒートシンク
60a…冷却フィン
70…端子モジュール
71…信号ピン
71a…圧入部
72…挿入突起
80…制御回路基板
81…挿通孔
Claims (4)
- バッテリから供給される直流電流を交流電流に変換して負荷に供給自在なパワーモジュールと、
前記パワーモジュールに対して電気的な接続自在な回路基板と、
前記パワーモジュール及び前記回路基板とは別体の端子モジュールに設けられると共に前記パワーモジュールと前記回路基板とを電気的に接続する圧入端子と、
前記パワーモジュールに設けられ、前記圧入端子が圧入される挿入部と、を備え、
前記パワーモジュールと前記回路基板とは、前記端子モジュールを前記回路基板に実装すると共に前記端子モジュールを前記パワーモジュールと前記回路基板との間に介在させた状態で、前記圧入端子を前記挿入部に圧入することによって組付けられることを特徴とする半導体装置。 - 前記端子モジュールは、前記回路基板に面実装されることを特徴とする請求項1に記載の半導体装置。
- 前記端子モジュールは、前記パワーモジュールと前記回路基板とを互いに位置決めする突起部を備えることを特徴とする請求項2に記載の半導体装置。
- 前記回路基板は、前記パワーモジュールの動作を制御する制御素子が実装された制御回路基板であり、前記圧入端子は、前記制御回路基板と前記パワーモジュールとの間で信号を入送出するための信号ピンとして機能することを特徴とする請求項1から請求項3のいずれかに記載の半導体装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010049507A JP5583433B2 (ja) | 2010-03-05 | 2010-03-05 | 半導体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010049507A JP5583433B2 (ja) | 2010-03-05 | 2010-03-05 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
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JP2011187564A JP2011187564A (ja) | 2011-09-22 |
JP5583433B2 true JP5583433B2 (ja) | 2014-09-03 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2010049507A Expired - Fee Related JP5583433B2 (ja) | 2010-03-05 | 2010-03-05 | 半導体装置 |
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JP (1) | JP5583433B2 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9786587B2 (en) | 2011-12-14 | 2017-10-10 | Fuji Electric Co., Ltd. | Semiconductor device and method for manufacturing the semiconductor device |
JP5887901B2 (ja) | 2011-12-14 | 2016-03-16 | 富士電機株式会社 | 半導体装置及び半導体装置の製造方法 |
JP2014043119A (ja) * | 2012-08-24 | 2014-03-13 | Hitachi Automotive Systems Ltd | 電動ブレーキ制御装置 |
JP6016611B2 (ja) * | 2012-12-20 | 2016-10-26 | 三菱電機株式会社 | 半導体モジュール、その製造方法およびその接続方法 |
EP3217774B1 (en) * | 2016-03-08 | 2018-06-13 | ABB Schweiz AG | Semiconductor module |
CN106910692B (zh) * | 2017-02-13 | 2023-05-12 | 嘉兴斯达半导体股份有限公司 | 一种压力接触连接的功率端子及使用方法 |
JP7224272B2 (ja) * | 2019-10-30 | 2023-02-17 | 三菱電機株式会社 | パワー半導体装置 |
JP2021180278A (ja) | 2020-05-15 | 2021-11-18 | 富士電機株式会社 | 半導体装置及び半導体装置の製造方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04208711A (ja) * | 1990-11-09 | 1992-07-30 | Mitsubishi Electric Corp | スイッチ装置 |
JPH0645721A (ja) * | 1992-07-24 | 1994-02-18 | Sanyo Electric Co Ltd | 混成集積回路装置 |
JP4569473B2 (ja) * | 2006-01-04 | 2010-10-27 | 株式会社日立製作所 | 樹脂封止型パワー半導体モジュール |
JP2008194707A (ja) * | 2007-02-09 | 2008-08-28 | Fuji Electric Device Technology Co Ltd | レーザ溶接用治具およびそれを用いた半導体装置の製造方法 |
JP4576448B2 (ja) * | 2008-07-18 | 2010-11-10 | 三菱電機株式会社 | 電力用半導体装置 |
JP4607995B2 (ja) * | 2008-11-28 | 2011-01-05 | 三菱電機株式会社 | 電力用半導体装置 |
JP5136513B2 (ja) * | 2009-05-15 | 2013-02-06 | トヨタ自動車株式会社 | 半導体装置 |
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2010
- 2010-03-05 JP JP2010049507A patent/JP5583433B2/ja not_active Expired - Fee Related
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JP2011187564A (ja) | 2011-09-22 |
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