JP2020526930A5 - - Google Patents

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Publication number
JP2020526930A5
JP2020526930A5 JP2020501184A JP2020501184A JP2020526930A5 JP 2020526930 A5 JP2020526930 A5 JP 2020526930A5 JP 2020501184 A JP2020501184 A JP 2020501184A JP 2020501184 A JP2020501184 A JP 2020501184A JP 2020526930 A5 JP2020526930 A5 JP 2020526930A5
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JP
Japan
Prior art keywords
power semiconductor
semiconductor module
molding compound
metal coating
side wall
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2020501184A
Other languages
English (en)
Japanese (ja)
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JP2020526930A (ja
JP7221930B2 (ja
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Publication date
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Priority claimed from PCT/EP2018/068604 external-priority patent/WO2019011890A1/en
Publication of JP2020526930A publication Critical patent/JP2020526930A/ja
Publication of JP2020526930A5 publication Critical patent/JP2020526930A5/ja
Application granted granted Critical
Publication of JP7221930B2 publication Critical patent/JP7221930B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2020501184A 2017-07-12 2018-07-10 パワー半導体モジュール Active JP7221930B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP17181052.6 2017-07-12
EP17181052 2017-07-12
PCT/EP2018/068604 WO2019011890A1 (en) 2017-07-12 2018-07-10 POWER SEMICONDUCTOR MODULE

Publications (3)

Publication Number Publication Date
JP2020526930A JP2020526930A (ja) 2020-08-31
JP2020526930A5 true JP2020526930A5 (enExample) 2021-08-05
JP7221930B2 JP7221930B2 (ja) 2023-02-14

Family

ID=59325238

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2020501184A Active JP7221930B2 (ja) 2017-07-12 2018-07-10 パワー半導体モジュール

Country Status (5)

Country Link
US (1) US11362008B2 (enExample)
EP (1) EP3649671B1 (enExample)
JP (1) JP7221930B2 (enExample)
CN (1) CN110914975B (enExample)
WO (1) WO2019011890A1 (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USD929462S1 (en) * 2018-06-04 2021-08-31 Semikron Elektronik Gmbh & Co. Kg Module
USD903590S1 (en) 2018-09-12 2020-12-01 Cree Fayetteville, Inc. Power module
CN209419498U (zh) * 2019-03-25 2019-09-20 阳光电源股份有限公司 Igbt模块及其导体安装结构、逆变器
USD942403S1 (en) 2019-10-24 2022-02-01 Wolfspeed, Inc. Power module having pin fins
EP4187586A1 (en) 2021-11-24 2023-05-31 Hitachi Energy Switzerland AG Assembly for a power module, power module and method for producing an assembly for a power module
US20230326823A1 (en) * 2022-04-06 2023-10-12 Infineon Technologies Ag Temperature Sensor Arrangement in Semiconductor Module
DE102024201717A1 (de) * 2024-02-26 2025-08-28 Robert Bosch Gesellschaft mit beschränkter Haftung Substrat eines Leistungsmoduls
EP4687170A1 (en) * 2024-07-31 2026-02-04 Hitachi Energy Ltd Power semiconductor module and method for manufacturing a power semiconductor module

Family Cites Families (27)

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Publication number Priority date Publication date Assignee Title
JP3269745B2 (ja) 1995-01-17 2002-04-02 株式会社日立製作所 モジュール型半導体装置
JP3440824B2 (ja) * 1998-05-28 2003-08-25 株式会社日立製作所 半導体装置
EP0962974B1 (en) * 1998-05-28 2005-01-26 Hitachi, Ltd. Semiconductor device
JP3414388B2 (ja) * 2000-06-12 2003-06-09 株式会社日立製作所 電子機器
DE10214953A1 (de) * 2002-04-04 2003-10-30 Infineon Technologies Ag Leistungsmodul mit mindestens zwei Substraten und Verfahren zu seiner Herstellung
US6696644B1 (en) * 2002-08-08 2004-02-24 Texas Instruments Incorporated Polymer-embedded solder bumps for reliable plastic package attachment
JP3740117B2 (ja) 2002-11-13 2006-02-01 三菱電機株式会社 電力用半導体装置
KR101391925B1 (ko) 2007-02-28 2014-05-07 페어차일드코리아반도체 주식회사 반도체 패키지 및 이를 제조하기 위한 반도체 패키지 금형
JP5061717B2 (ja) * 2007-05-18 2012-10-31 富士電機株式会社 半導体モジュール及び半導体モジュールの製造方法
US8018047B2 (en) * 2007-08-06 2011-09-13 Infineon Technologies Ag Power semiconductor module including a multilayer substrate
US8154114B2 (en) * 2007-08-06 2012-04-10 Infineon Technologies Ag Power semiconductor module
DE102008029829B4 (de) 2008-06-25 2012-10-11 Danfoss Silicon Power Gmbh Vertikal nach oben kontaktierender Halbleiter und Verfahren zu dessen Herstellung
JP4576448B2 (ja) 2008-07-18 2010-11-10 三菱電機株式会社 電力用半導体装置
US8248809B2 (en) * 2008-08-26 2012-08-21 GM Global Technology Operations LLC Inverter power module with distributed support for direct substrate cooling
JP4607995B2 (ja) * 2008-11-28 2011-01-05 三菱電機株式会社 電力用半導体装置
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JP2011187819A (ja) 2010-03-10 2011-09-22 Mitsubishi Electric Corp 樹脂封止型パワーモジュールおよびその製造方法
JP5661183B2 (ja) 2012-02-13 2015-01-28 パナソニックIpマネジメント株式会社 半導体装置およびその製造方法
JP5859906B2 (ja) 2012-04-20 2016-02-16 三菱電機株式会社 半導体装置および半導体装置の製造方法
JP5836298B2 (ja) 2013-03-13 2015-12-24 三菱電機株式会社 半導体装置
DE102013219833B4 (de) * 2013-09-30 2020-02-13 Infineon Technologies Ag Halbleitermodul mit leiterplatte und vefahren zur hertellung eines halbleitermoduls mit einer leiterplatte
CN105765716B (zh) 2014-05-15 2018-06-22 富士电机株式会社 功率半导体模块和复合模块
JP6540324B2 (ja) 2015-07-23 2019-07-10 富士電機株式会社 半導体モジュール及び半導体モジュールの製造方法
DE102015112451B4 (de) 2015-07-30 2021-02-04 Danfoss Silicon Power Gmbh Leistungshalbleitermodul
CN108886036B (zh) * 2016-04-04 2022-06-24 三菱电机株式会社 功率模块、功率半导体装置及功率模块制造方法
US10224268B1 (en) * 2016-11-28 2019-03-05 CoolStar Technology, Inc. Enhanced thermal transfer in a semiconductor structure
EP4401126A3 (en) * 2018-01-30 2024-09-25 Infineon Technologies AG Power semiconductor module and method for producing the same

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