JP7221930B2 - パワー半導体モジュール - Google Patents

パワー半導体モジュール Download PDF

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Publication number
JP7221930B2
JP7221930B2 JP2020501184A JP2020501184A JP7221930B2 JP 7221930 B2 JP7221930 B2 JP 7221930B2 JP 2020501184 A JP2020501184 A JP 2020501184A JP 2020501184 A JP2020501184 A JP 2020501184A JP 7221930 B2 JP7221930 B2 JP 7221930B2
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Japan
Prior art keywords
power semiconductor
molding compound
semiconductor module
substrate
metallization
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JP2020501184A
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English (en)
Japanese (ja)
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JP2020526930A5 (enExample
JP2020526930A (ja
Inventor
トリューセル，ドミニク
ハルトマン，サミュエル
ギヨン，ダビド
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Hitachi Energy Ltd
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Hitachi Energy Switzerland AG
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Publication of JP2020526930A5 publication Critical patent/JP2020526930A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D
    • H01L25/072—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/06—Containers; Seals characterised by the material of the container or its electrical properties
    • H01L23/08—Containers; Seals characterised by the material of the container or its electrical properties the material being an electrical insulator, e.g. glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
    • H01L21/4803—Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks
    • H01L21/481—Insulating layers on insulating parts, with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/565—Moulds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/142—Metallic substrates having insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3178—Coating or filling in grooves made in the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
    • H01L23/4006—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
JP2020501184A 2017-07-12 2018-07-10 パワー半導体モジュール Active JP7221930B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP17181052.6 2017-07-12
EP17181052 2017-07-12
PCT/EP2018/068604 WO2019011890A1 (en) 2017-07-12 2018-07-10 POWER SEMICONDUCTOR MODULE

Publications (3)

Publication Number Publication Date
JP2020526930A JP2020526930A (ja) 2020-08-31
JP2020526930A5 JP2020526930A5 (enExample) 2021-08-05
JP7221930B2 true JP7221930B2 (ja) 2023-02-14

Family

ID=59325238

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2020501184A Active JP7221930B2 (ja) 2017-07-12 2018-07-10 パワー半導体モジュール

Country Status (5)

Country Link
US (1) US11362008B2 (enExample)
EP (1) EP3649671B1 (enExample)
JP (1) JP7221930B2 (enExample)
CN (1) CN110914975B (enExample)
WO (1) WO2019011890A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USD929462S1 (en) * 2018-06-04 2021-08-31 Semikron Elektronik Gmbh & Co. Kg Module
USD903590S1 (en) 2018-09-12 2020-12-01 Cree Fayetteville, Inc. Power module
CN209419498U (zh) * 2019-03-25 2019-09-20 阳光电源股份有限公司 Igbt模块及其导体安装结构、逆变器
USD942403S1 (en) 2019-10-24 2022-02-01 Wolfspeed, Inc. Power module having pin fins
DE102024201717A1 (de) * 2024-02-26 2025-08-28 Robert Bosch Gesellschaft mit beschränkter Haftung Substrat eines Leistungsmoduls

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009044152A (ja) 2007-08-06 2009-02-26 Infineon Technologies Ag 半導体モジュール、パワー半導体モジュール、パワー半導体構造、多層基板、パワー半導体モジュールの製造方法、および多層基板の製造方法
JP2010129797A (ja) 2008-11-28 2010-06-10 Mitsubishi Electric Corp 電力用半導体装置
JP2013225555A (ja) 2012-04-20 2013-10-31 Mitsubishi Electric Corp 半導体装置および半導体装置の製造方法
WO2015174158A1 (ja) 2014-05-15 2015-11-19 富士電機株式会社 パワー半導体モジュールおよび複合モジュール
JP2017028132A (ja) 2015-07-23 2017-02-02 富士電機株式会社 半導体モジュール及び半導体モジュールの製造方法

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Publication number Priority date Publication date Assignee Title
JP3269745B2 (ja) 1995-01-17 2002-04-02 株式会社日立製作所 モジュール型半導体装置
JP3440824B2 (ja) * 1998-05-28 2003-08-25 株式会社日立製作所 半導体装置
DE69923374T2 (de) * 1998-05-28 2006-01-19 Hitachi, Ltd. Halbleitervorrichtung
TWI248384B (en) * 2000-06-12 2006-02-01 Hitachi Ltd Electronic device
DE10214953A1 (de) * 2002-04-04 2003-10-30 Infineon Technologies Ag Leistungsmodul mit mindestens zwei Substraten und Verfahren zu seiner Herstellung
US6696644B1 (en) * 2002-08-08 2004-02-24 Texas Instruments Incorporated Polymer-embedded solder bumps for reliable plastic package attachment
JP3740117B2 (ja) 2002-11-13 2006-02-01 三菱電機株式会社 電力用半導体装置
KR101391925B1 (ko) 2007-02-28 2014-05-07 페어차일드코리아반도체 주식회사 반도체 패키지 및 이를 제조하기 위한 반도체 패키지 금형
JP5061717B2 (ja) 2007-05-18 2012-10-31 富士電機株式会社 半導体モジュール及び半導体モジュールの製造方法
US8018047B2 (en) * 2007-08-06 2011-09-13 Infineon Technologies Ag Power semiconductor module including a multilayer substrate
DE102008029829B4 (de) 2008-06-25 2012-10-11 Danfoss Silicon Power Gmbh Vertikal nach oben kontaktierender Halbleiter und Verfahren zu dessen Herstellung
JP4576448B2 (ja) 2008-07-18 2010-11-10 三菱電機株式会社 電力用半導体装置
US8248809B2 (en) * 2008-08-26 2012-08-21 GM Global Technology Operations LLC Inverter power module with distributed support for direct substrate cooling
JP4825259B2 (ja) 2008-11-28 2011-11-30 三菱電機株式会社 電力用半導体モジュール及びその製造方法
JP2011187819A (ja) 2010-03-10 2011-09-22 Mitsubishi Electric Corp 樹脂封止型パワーモジュールおよびその製造方法
CN103430307B (zh) 2012-02-13 2016-04-27 松下知识产权经营株式会社 半导体装置及其制造方法
JP5836298B2 (ja) * 2013-03-13 2015-12-24 三菱電機株式会社 半導体装置
DE102013219833B4 (de) * 2013-09-30 2020-02-13 Infineon Technologies Ag Halbleitermodul mit leiterplatte und vefahren zur hertellung eines halbleitermoduls mit einer leiterplatte
DE102015112451B4 (de) 2015-07-30 2021-02-04 Danfoss Silicon Power Gmbh Leistungshalbleitermodul
CN108886036B (zh) * 2016-04-04 2022-06-24 三菱电机株式会社 功率模块、功率半导体装置及功率模块制造方法
US10224268B1 (en) * 2016-11-28 2019-03-05 CoolStar Technology, Inc. Enhanced thermal transfer in a semiconductor structure
EP3518278A1 (en) * 2018-01-30 2019-07-31 Infineon Technologies AG Power semiconductor module and method for producing the same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009044152A (ja) 2007-08-06 2009-02-26 Infineon Technologies Ag 半導体モジュール、パワー半導体モジュール、パワー半導体構造、多層基板、パワー半導体モジュールの製造方法、および多層基板の製造方法
JP2010129797A (ja) 2008-11-28 2010-06-10 Mitsubishi Electric Corp 電力用半導体装置
JP2013225555A (ja) 2012-04-20 2013-10-31 Mitsubishi Electric Corp 半導体装置および半導体装置の製造方法
WO2015174158A1 (ja) 2014-05-15 2015-11-19 富士電機株式会社 パワー半導体モジュールおよび複合モジュール
JP2017028132A (ja) 2015-07-23 2017-02-02 富士電機株式会社 半導体モジュール及び半導体モジュールの製造方法

Also Published As

Publication number Publication date
WO2019011890A1 (en) 2019-01-17
EP3649671A1 (en) 2020-05-13
JP2020526930A (ja) 2020-08-31
US11362008B2 (en) 2022-06-14
EP3649671B1 (en) 2021-02-17
US20200144140A1 (en) 2020-05-07
CN110914975B (zh) 2023-08-01
CN110914975A (zh) 2020-03-24

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