WO2013150890A1 - 半導体デバイス - Google Patents

半導体デバイス Download PDF

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Publication number
WO2013150890A1
WO2013150890A1 PCT/JP2013/057829 JP2013057829W WO2013150890A1 WO 2013150890 A1 WO2013150890 A1 WO 2013150890A1 JP 2013057829 W JP2013057829 W JP 2013057829W WO 2013150890 A1 WO2013150890 A1 WO 2013150890A1
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WIPO (PCT)
Prior art keywords
semiconductor
chip
semiconductor chips
mounting substrate
semiconductor chip
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PCT/JP2013/057829
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English (en)
French (fr)
Inventor
貴弘 杉村
浩史 野津
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住友電気工業株式会社
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Publication of WO2013150890A1 publication Critical patent/WO2013150890A1/ja

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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Definitions

  • the present invention relates to a semiconductor device.
  • Non-Patent Document 1 As examples of semiconductor devices, case-type semiconductor devices and resin-encapsulated semiconductor devices are known (see Non-Patent Document 1).
  • a semiconductor chip mounted on a chip mounting substrate such as a die pad is connected to an electrode terminal via a wire.
  • a plurality of semiconductor chips may be mounted on the chip mounting substrate in order to ensure the performance of the semiconductor device.
  • a semiconductor chip is mounted on a chip mounting substrate via an adhesive layer such as a solder piece.
  • an adhesive layer such as a solder piece.
  • a solder piece serving as an adhesive layer is used.
  • a partition portion was provided to ensure separation. In this case, a gap corresponding to the width of the partition portion is generated between adjacent semiconductor chips.
  • an object of the present invention is to provide a semiconductor device in which a plurality of semiconductor chips can be arranged on a chip mounting substrate with a narrower interval between adjacent semiconductor chips.
  • a semiconductor device includes a chip mounting substrate, a first semiconductor chip mounted on the chip mounting substrate, and a second mounted on the chip mounting substrate adjacent to the first semiconductor chip.
  • the chip mounting substrate has a first surface on which the first semiconductor chip is mounted and a second surface on which the second semiconductor chip is mounted. In the thickness direction of the chip mounting substrate, the position of the second surface is different from the position of the first surface.
  • the first and second semiconductor chips are mounted closer in the direction orthogonal to the thickness direction. It can be mounted on a substrate.
  • the second surface may be higher than the first surface in the thickness direction.
  • the difference between the position of the second surface and the position of the first surface in the thickness direction can be greater than or equal to the thickness of the first semiconductor chip.
  • the chip mounting substrate may have a connection surface that connects the first surface and the second surface.
  • the connection surface may be perpendicular to the first surface.
  • the first and second semiconductor chips can be placed closer to each other on the chip mounting substrate in the direction orthogonal to the plate thickness direction.
  • the chip mounting substrate may have a plate-like base portion and a convex portion provided on the main surface of the base portion.
  • the main surface may be the first surface
  • the surface of the convex portion opposite to the base portion may be the second surface.
  • the mounting positions of the first and second semiconductor chips in the thickness direction can be easily made different by mounting the second semiconductor chip on the convex portion of the chip mounting substrate.
  • the material of the first and second semiconductor chips may include a wide band gap semiconductor.
  • Wide band gap semiconductors have a lower manufacturing yield of semiconductor chips than silicon (Si).
  • Si silicon
  • wide band gap semiconductors are more expensive than silicon. Therefore, even in the case of a wide bandgap semiconductor, if one large semiconductor chip is manufactured in the same manner as silicon, the manufacturing yield is reduced and the manufacturing cost is increased. For this reason, when a wide band gap semiconductor is used, it may be necessary to mount a plurality of small semiconductor chips on the chip mounting substrate instead of a single large semiconductor chip.
  • the first and second semiconductor chips can be efficiently arranged on the chip mounting substrate. Therefore, a configuration in which the positions of the first and second surfaces are different in the plate thickness direction can be a more effective configuration for the first and second semiconductor chips including a wide band gap semiconductor as a material.
  • a plurality of semiconductor chips can be arranged on the chip mounting substrate with the interval between adjacent semiconductor chips being made narrower.
  • FIG. 1 is a plan view schematically showing a semiconductor device according to a first embodiment. It is a schematic diagram which shows the mounting state of a die pad (chip mounting substrate) and a semiconductor chip.
  • FIG. 3A is a drawing showing an example of a mounting process when two semiconductor chips are arranged on a die pad that does not have a convex portion.
  • FIG. 3B is a drawing showing another example of the mounting process in the case where two semiconductor chips are arranged on a die pad that does not have a convex portion.
  • FIG. 4 is a drawing showing an example of a mounting process when two semiconductor chips are mounted on a die pad having a convex portion. It is a figure which shows typically the semiconductor device which concerns on 2nd Embodiment.
  • FIG. 1 is a plan view schematically showing the semiconductor device according to the first embodiment.
  • a semiconductor device 10 shown in FIG. 1 is a resin-encapsulated semiconductor device.
  • the semiconductor device 10 is a power semiconductor device used for a power source or the like, for example.
  • An example of the package form of the semiconductor device 10 is a general TO series. Examples of TO series include TO-247, TO-220, TO-263 (D2-PAK), and TO-252 (D-PAK).
  • the semiconductor device 10 includes a die pad 12, leads 14, 16, and 18, a semiconductor chip 20a (first semiconductor chip), a semiconductor chip 20b (second semiconductor chip), and a semiconductor chip 20c (first semiconductor chip). ).
  • the die pad 12 is a chip mounting substrate on which the semiconductor chips 20a to 20c are mounted.
  • the die pad 12 can be electrically connected to the semiconductor chips 20a to 20c.
  • the example of the planar view shape (shape seen from the plate thickness direction) of the die pad 12 is a rectangle.
  • Examples of the material of the die pad 12 include metals such as copper (Cu) and a copper alloy.
  • a through-hole 22 that penetrates the die pad 12 in the plate thickness direction can be formed in the die pad 12.
  • the through-hole 22 is a hole through which a screw is passed when the semiconductor device 10 is fixed to another member by, for example, a screw.
  • the thickness direction of the die pad is referred to as the Z direction, and two directions orthogonal to the Z direction are referred to as the X direction and the Y direction.
  • the X direction and the Y direction are orthogonal.
  • the planar view shape of the die pad 12 is a rectangle, the X direction corresponds to the short side direction, and the Y direction corresponds to the long side direction.
  • Leads 14, 16, 18 are arranged along the X direction.
  • the lead 14 is located between the lead 16 and the lead 18.
  • the leads 14, 16, 18 and the die pad 12 can constitute a lead frame.
  • the inner end portion of the lead 14 is mechanically (in other words, physically) integrally connected to the die pad 12. Since the die pad 12 has conductivity, the lead 14 and the die pad 12 are electrically connected. Examples of the material of the lead 14 include the same material as that of the die pad 12. Examples of the material of the leads 16 and 18 include metals such as copper and copper alloys.
  • the semiconductor chips 20a to 20c are mounted at predetermined positions on the die pad 12. As an example, the semiconductor chips 20a to 20c are arranged in the order of the semiconductor chip 20a, the semiconductor chip 20b, and the semiconductor chip 20c along the X direction. Examples of the semiconductor chips 20a to 20c include transistors such as MOS-FETs and insulated gate bipolar transistors (IGBTs). Examples of the material of the semiconductor chips 20a to 20c include a wide band gap semiconductor, silicon and other semiconductors. A wide band gap semiconductor has a band gap larger than that of silicon. Examples of wide band gap semiconductors include silicon carbide (SiC), gallium nitride (GaN), and diamond.
  • SiC silicon carbide
  • GaN gallium nitride
  • the semiconductor chip 20a has a gate electrode pad GP1, an electrode pad SP1, and a lower electrode DP1 (see FIG. 2).
  • the semiconductor chip 20b includes a gate electrode pad GP2, an electrode pad SP2, and a lower electrode DP2 (see FIG. 2).
  • the semiconductor chip 20c includes a gate electrode pad GP3, an electrode pad SP3, and a lower electrode DP3 (see FIG. 2).
  • the gate electrode pads GP1 to GP3 and the electrode pads SP1 to SP3 are arranged on the opposite side to the corresponding lower electrodes DP1 to DP3.
  • the lower electrodes DP1 to DP3 of the semiconductor chips 20a to 20c are die pads through adhesive layers 24a to 24c (see FIG. 2) made of a material containing lead-containing metal solder, lead-free metal solder, conductive resin, or the like. 12 is implemented. Thus, the semiconductor chips 20a to 20c are electrically connected to the die pad 12.
  • the gate electrode pads GP1 to GP3 are connected to the leads 16 via the wirings 26a to 26c.
  • the electrode pads SP1 to SP3 are connected to the leads 18 via wirings 28a to 28c, respectively.
  • the wirings 26a to 26c and 28a to 28c may be wires or ribbons. Examples of the material of the wirings 26a to 26c and 28a to 28c include metals such as aluminum, gold, and copper.
  • the wirings 26a to 26c and 28a to 28c are connected to the leads 16 and 18 and the semiconductor chips 20a to 20c, for example, by wire bonding using ultrasonic waves or pressure.
  • the electrode pads SP1 to SP3 correspond to source electrode pads
  • the lower electrodes DP1 to DP3 correspond to drain electrodes.
  • the lead 14 corresponds to the drain electrode terminal
  • the lead 16 corresponds to the gate electrode terminal
  • the lead 18 corresponds to the source electrode terminal.
  • the semiconductor chips 20a to 20c include IGBTs
  • the electrode pads SP1 to SP3 correspond to emitter electrode pads
  • the lower electrodes DP1 to DP3 correspond to collector electrodes.
  • the lead 14 corresponds to the collector electrode terminal
  • the lead 16 corresponds to the gate electrode terminal
  • the lead 18 corresponds to the emitter electrode terminal.
  • FIG. 1 illustrates the case where the semiconductor chips 20a to 20c are MOS-FETs.
  • the die pad 12 and the semiconductor chips 20a to 20c can be sealed by the resin portion 30.
  • the resin part 30 is shown with the broken line for convenience of explanation. Inner end portions of the leads 14, 16, and 18 are fixed to the resin portion 30. Of the leads 14, 16, 18, the portion inside the resin portion 30 is a so-called inner lead portion. Of the leads 14, 16, and 18, the portion outside the resin portion 30 is an outer lead portion. An example of the outer shape of the resin part 30 is a substantially rectangular parallelepiped. Examples of the material of the resin part 30 include thermoplastic resins such as polyphenylene sulfide resin (PPS resin) and liquid crystal polymer.
  • PPS resin polyphenylene sulfide resin
  • the resin portion 30 can be formed by molding the die pad 12 and the semiconductor chips 20a to 20c with a thermoplastic resin.
  • a through hole 32 is formed in the resin portion 30 with the central axis of the through hole 22 of the die pad 12 as the central axis.
  • the through-hole 32 is a hole through which a screw passes when screwing or the like, like the through-hole 22.
  • the diameter of the through hole 32 is smaller than the diameter of the through hole 22.
  • FIG. 2 is a schematic diagram showing a mounting state of the die pad and the semiconductor chip.
  • the die pad 12 includes a plate-like base portion 34 and a convex portion 36 provided on the main surface (first surface) 34 a of the base portion 34.
  • An example of the shape of the convex portion 36 is a substantially rectangular parallelepiped extending in the Y direction.
  • the length of the protrusion 36 in the X direction may be substantially the same as the width of the semiconductor chip 20b.
  • the convex portion 36 is physically and integrally provided on the base portion 34.
  • the base portion 34 and the convex portion 36 are integrally formed by, for example, injection molding.
  • the die pad 12 having the convex portion 36 may be cut out from a plate having a predetermined plate thickness.
  • the base portion 34 and the convex portion 36 are integrally formed, a configuration in which the lead 14 is integrally connected to the base portion 34 can be formed at the same time.
  • the semiconductor chip 20b is mounted on the upper surface (surface opposite to the base portion 34, second surface) 36a of the convex portion 36.
  • the semiconductor chips 20a and 20c are arranged on both sides in the X direction of the convex portion 36 on the main surface 34a.
  • the upper surface 36a that is the mounting position of the semiconductor chip 20b is higher than the main surface 34a that is the mounting position of the semiconductor chips 20a and 20c in the Z direction.
  • the thickness (length in the Z direction) t of the convex portion 36 is thicker than the thickness of the semiconductor chips 20a and 20c.
  • the thickness t of the convex portion 36 may be equal to or greater than the thickness of the semiconductor chips 20a and 20c.
  • the side surfaces (connection surfaces) 36b, 36b of the convex portion 36 connecting the main surface 34a and the upper surface 36a may be substantially perpendicular to the main surface 34a.
  • the interval between the semiconductor chips 20a to 20c in the X direction can be narrower than that in the case where the convex portions 36 are not provided. This point will be described with reference to FIGS. 3A and 3B and FIG.
  • FIG. 3A is a drawing showing an example of a mounting process when two semiconductor chips are arranged on a die pad that does not have a convex portion
  • FIG. 3B shows two semiconductor chips on a die pad that does not have a convex portion. It is drawing which shows the other example of the mounting process in the case of arrange
  • FIG. 4 is a drawing showing an example of a mounting process when two semiconductor chips are mounted on a die pad having a convex portion. 3A, 3B, and 4, the semiconductor chip and the die pad are schematically shown.
  • FIG. 3A shows a case where the semiconductor chips 20a and 20b are fixed to a plate-like die pad 38 having no convex portion, that is, die-bonded using a printing paste.
  • the printing mask 40 provided with openings 40a and 40b having a size corresponding to the chip size is formed at a position where the semiconductor chips 20a and 20b are mounted.
  • solder pastes 42a and 42b are injected into the openings 40a and 40b.
  • the solder pastes 42a and 42b are heated and cooled to mount the semiconductor chips 20a and 20b on the die pad 38.
  • the solder pastes 42a and 42b are the adhesive layers 24a and 24b.
  • FIG. 3B shows a case where the semiconductor chips 20a and 20b are mounted on the die pad 38 using the mounting jig 44, that is, die-bonded.
  • a mounting jig 44 provided with openings 44a and 44b having a size corresponding to the chip size is provided at the position where the semiconductor chips 20a and 20b are mounted. Place on top.
  • the solder pieces 46a and 46b are disposed in the openings 44a and 44b, respectively.
  • the semiconductor chips 20a and 20b are placed on the solder pieces 46a and 46b, and the solder pieces 46a and 46b are heated and cooled to mount the semiconductor chips 20a and 20b on the die pad 38.
  • the solder pieces 46 are the adhesive layers 24a and 24b.
  • the solder paste 42a and solder for the semiconductor chips 20a and 20b are provided between the openings 40a and 44a and the openings 40b and 44b.
  • a partition portion 48 is provided to separate the pastes 42b or to separate the solder pieces 46a and the solder pieces 46b. As a result, a gap corresponding to the width of the partition portion 48 is generated between the semiconductor chips 20a and 20b.
  • the solder pastes 42 a and 42 b or the solder pieces 46 a and 46 b can be arranged on the main surface 34 a and the convex portion 36 without using the printing mask 40 and the mounting jig 44.
  • the open end side of the U-shaped print mask 50 is placed in contact with the convex portion 36 in order to define the mounting position of the semiconductor chip 20a.
  • a pair of print mask pieces 52 extending along the width direction of the convex portion 36 may be disposed on the semiconductor chip 20b in order to define the mounting position of the semiconductor chip 20b.
  • solder pastes 42a and 42b for die-bonding the semiconductor chips 20a and 20b are respectively disposed between the region defined by the printing mask 50 and the convex portion 36 and the pair of mask pieces 52. After the solder pastes 42a and 42b are disposed, the semiconductor chips 20a and 20b can be mounted on the die pad 12 in the same manner as in FIG.
  • a mounting jig having a similar shape may be used instead of the print mask 50.
  • the semiconductor chip 20a and the semiconductor chip 20b can be separated in the Z direction. Therefore, as described with reference to FIG. 4, it is possible to prevent the solder pastes 42a and 42b (or the solder pieces 46a and 46b) for die-bonding the semiconductor chip 20a and the semiconductor chip 20b from contacting each other. Therefore, it is not necessary to provide the partition part 48 when die-bonding the semiconductor chips 20a and 20b. As a result, the gap between the semiconductor chip 20a and the semiconductor chip 20b in the X direction can be made very small.
  • the description has been made by paying attention to the distance in the X direction from the semiconductor chips 20a and 20b, but the same applies to the distance in the X direction from the semiconductor chips 20b and 20c. Therefore, by having the convex portion 36, it is possible to make the interval in the X direction between two adjacent semiconductor chips out of the semiconductor chips 20a to 20c shorter than when the convex portion 36 is not provided. In this case, the mounting area of the semiconductor chips 20a to 20c can be further reduced.
  • the semiconductor chips 20a to 20c are provided with non-operating areas around the operating areas of the semiconductor chips 20a to 20c in order to obtain a withstand voltage characteristic. Therefore, it is also possible to arrange the semiconductor chips 20a and 20c in contact with the side surface of the convex portion 36. In this case, the distance between the semiconductor chips 20a and 20c and the semiconductor chip 20b in the X direction can be made substantially zero.
  • the semiconductor chip 20b is die bonded to the convex part 36. In doing so, contact between the semiconductor chips 20a, 20c and the adhesive layer 24b can be prevented more reliably.
  • the semiconductor chips 20a to 20c are mounted with the interval between the two adjacent semiconductor chips in the X direction closer to each other in the X direction. obtain. As a result, more semiconductor chips can be mounted on the die pad 12.
  • Wide band gap semiconductors have a lower manufacturing yield of semiconductor chips than silicon.
  • wide band gap semiconductors are more expensive than silicon. Therefore, even in the case of a wide bandgap semiconductor, if one large semiconductor chip is manufactured in the same manner as silicon, the manufacturing yield is reduced and the manufacturing cost is increased. For this reason, when using a wide band gap semiconductor, it may be necessary to mount a plurality of small semiconductor chips on the die pad instead of one large semiconductor chip.
  • the semiconductor chips 20a, 20b, and 20c using the wide band gap semiconductor as a material can be efficiently arranged on one die pad 12. Therefore, the configuration of the semiconductor device 10 can be a more effective configuration when the semiconductor chips 20a, 20b, and 20c using a wide band gap semiconductor as a material are employed.
  • FIG. 5 is a diagram schematically showing a semiconductor device according to the second embodiment.
  • the semiconductor device 54 shown in FIG. 5 is a case type semiconductor device.
  • the semiconductor device 54 includes first and second semiconductor chips 20a and 20b, a gate electrode terminal 56, an electrode terminal 58, a chip mounting substrate 60, and a case 62.
  • the chip mounting substrate 60 is a substrate on which the semiconductor chips 20a and 20b are mounted.
  • the chip mounting substrate 60 is a wiring substrate in which a wiring layer is provided on the surface of an insulating substrate.
  • the semiconductor chips 20a and 20b are mounted on the chip mounting substrate 60 via the adhesive layers 24a and 24b on the wiring layer of the chip mounting substrate 60.
  • the chip mounting substrate 60 includes a base portion 64 and a convex portion 66 provided on the base portion 64.
  • the semiconductor chip 20a is mounted on the main surface 64a of the base portion 64, and the semiconductor chip 20b is mounted on the convex portion 66.
  • a heat dissipation layer 68 may be provided on the back surface of the chip mounting substrate 60 (the surface opposite to the side on which the semiconductor chips 20a and 20b are mounted).
  • Examples of the material of the heat dissipation layer 68 include metals such as copper and copper alloys.
  • the heat dissipation layer 68 is bonded to the heat sink 72 via an adhesive layer 70 made of, for example, solder.
  • An example of the material of the heat sink 72 includes a metal.
  • the semiconductor chips 20a and 20b, the chip mounting substrate 60, and the heat dissipation layer 68 are accommodated in a case 62.
  • the case 62 has a cylindrical shape, for example.
  • One opening of the case 62 can be sealed by a heat sink 72.
  • the other opening of the case 62 can be sealed with a lid 74.
  • the material of the case 62 include resins such as engineering plastics such as polybutylene terephthalate (PBT) and polyphenylene sulfide resin (PPS).
  • An example of the material of the lid 74 includes a thermoplastic resin.
  • a gel 76 such as a silicone gel may be injected for stress relaxation.
  • the gate electrode terminal 56 and the electrode terminal 58 included in the semiconductor device 54 are attached to the inner wall of the case 62.
  • the gate electrode terminal 56 and the electrode terminal 58 extend along the inner wall of the case 62 and project outside through an opening formed in the lid 74.
  • the electrode terminal 58 corresponds to the source electrode terminal.
  • the drain electrode terminal is not shown.
  • the semiconductor device 10 includes the three semiconductor chips 20a to 20c, but may not include the semiconductor chip 20c.
  • the semiconductor devices 10 and 54 may include four or more semiconductor chips.
  • the mounting positions of the plurality of semiconductor chips in the Z direction may be different from each other.
  • the semiconductor chips 20a and 20c are arranged on the main surface 34a which is the same surface.
  • the mounting positions of the semiconductor chip 20a and the semiconductor chip 20c may be different in the Z direction as long as there is a step between the semiconductor chip 20a and the semiconductor chip 20c and the semiconductor chip 20b.
  • the shape of the convex portion of the die pad 12 and the chip mounting substrate 60 as the chip mounting substrate is not limited to a rectangular parallelepiped.
  • the first and second semiconductor chips in the direction perpendicular to the plate thickness direction of the chip mounting substrate and in the arrangement direction of the adjacent first and second semiconductor chips for example, the X direction in FIG. 1).
  • the side surface of the convex portion (the side surface where the first semiconductor chip contacts or faces the first semiconductor chip) may be substantially perpendicular to the surface on which the first semiconductor chip is mounted. In this case, the interval between the first and second semiconductor chips can be made narrower in the arrangement direction.
  • the number of convex portions of the die pad 12 and the chip mounting substrate 60 as the chip mounting substrate may be two or more.
  • the second semiconductor chip 20b is disposed on the convex portion of the chip mounting substrate, and the first semiconductor chip 20a in a region other than the convex portion is disposed, so that the Z of the second semiconductor chip 20b can be obtained.
  • the mounting position in the direction was different from the mounting position of the first semiconductor chip 20a.
  • the mounting positions in the Z direction of the adjacent first semiconductor chip 20a and second semiconductor chip 20b may be different. Therefore, for example, a step may be provided along a predetermined direction in which the semiconductor chip is arranged, such as the X direction or the Y direction shown in FIG.
  • SYMBOLS 10 Semiconductor device, 12 ... Die pad (chip mounting substrate), 20a, 20c ... Semiconductor chip (first semiconductor chip), 20b ... Semiconductor chip (second semiconductor chip), 34 ... Base part, 34a ... Main surface ( First surface), 36: convex portion, 36a ... upper surface (second surface), 54 ... semiconductor device, 60 ... chip mounting substrate, 64 ... base portion, 64a ... main surface (first surface), 66 ... Convex part.

Abstract

　一実施形態に係る半導体デバイス（１０）は、チップ搭載基板（１２）と、チップ搭載基板に搭載される第１の半導体チップ（２０ａ）と、第１の半導体チップに隣接しておりチップ搭載基板に搭載される第２の半導体チップ（２０ｂ）と、を備える。チップ搭載基板は、第１の半導体チップが搭載される第１の表面（３４ａ）と、第２の半導体チップが搭載される第２の表面（３６ａ）と、を有する。チップ搭載基板の板厚方向において、第２の表面の位置は、第１の表面の位置と異なる。

Description

半導体デバイス
　本発明は、半導体デバイスに関する。
　半導体デバイスの例として、ケース型の半導体デバイス及び樹脂封止型の半導体デバイスが知られている（非特許文献１参照）。このような半導体デバイスでは、ダイパッドといったチップ搭載基板に搭載された半導体チップが、ワイヤを介して電極端子に接続される。
「Ｃｕワイヤを中心としたワイヤボンディングの不良原因と信頼性向上・評価技術」株式会社技術情報協会出版、２０１１年７月２９日、ｐ．１６３、ｐ．２６３
　チップ搭載基板には、半導体デバイスの性能を確保するために複数の半導体チップが搭載されることがある。通常、半導体チップは、半田片といった接着層を介してチップ搭載基板に実装される。複数の半導体チップを搭載する場合、隣接する半導体チップを搭載する際に、一方の半導体チップ用の接着層が他方の半導体チップに接触することを防止するために、接着層となるたとえば半田片を確実に分離するために仕切り部を設けていた。この場合、隣接する半導体チップ間に仕切り部の幅に対応する隙間が生じる。そのため、半導体デバイスとして小型化が要求される場合や、チップ搭載基板がデバイスの規格などによってある大きさに固定されている場合には、デバイス性能を確保するための所定数の半導体チップを、チップ搭載基板に載せることが困難な場合があった。
　そこで、本発明は、チップ搭載基板上に、隣接する半導体チップの間隔をより狭くして複数の半導体チップを配置し得る半導体デバイスを提供することを目的とする。
　本発明の一側面に係る半導体デバイスは、チップ搭載基板と、チップ搭載基板に搭載される第１の半導体チップと、第１の半導体チップに隣接しておりチップ搭載基板に搭載される第２の半導体チップと、を備える。チップ搭載基板は、第１の半導体チップが搭載される第１の表面と、第２の半導体チップが搭載される第２の表面とを有する。チップ搭載基板の板厚方向において、第２の表面の位置は、第１の表面の位置と異なる。
　この構成では、チップ搭載基板の板厚方向において第１及び第２の半導体チップの搭載位置が異なるので、板厚方向に直交する方向においては第１及び第２の半導体チップをより近づけてチップ搭載基板上に搭載可能である。
　一実施形態では、板厚方向において、第２の表面は、第１の表面より高くてもよい。この場合、板厚方向における第２の表面の位置と第１の表面の位置の差は第１の半導体チップの厚さ以上であり得る。
　この構成では、第１及び第２の半導体チップを、半田といった導電性の接着材を利用してチップ搭載基板に固定する際、第２の半導体チップをチップ搭載基板に固定するための上記接着材が第１の半導体チップにつきにくい。
　一実施形態において、チップ搭載基板は、第１の表面と第２の表面とを繋ぐ接続面を有し得る。この場合、接続面は、第１の表面に垂直であり得る。
　この構成では、板厚方向に直交する方向においては第１及び第２の半導体チップを更に近づけてチップ搭載基板上に搭載可能である。
　一実施形態において、チップ搭載基板は、板状の基体部と、基体部の主面に設けられた凸部と、を有し得る。この場合、主面が第１の表面であり、凸部において基体部と反対側の表面が第２の表面であり得る。
　この構成では、チップ搭載基板が有する凸部に第２の半導体チップを搭載することによって、容易に第１及び第２の半導体チップの板厚方向の搭載位置を異ならせることが可能である。
　一実施形態において、第１及び第２の半導体チップの材料が、ワイドバンドギャップ半導体を含み得る。
　ワイドバンドギャップ半導体では、シリコン（Ｓｉ）に比べて、半導体チップの製造歩留まりが低い。また、ワイドバンドギャップ半導体はシリコンに比べて高価である。よって、ワイドバンドギャップ半導体においてもシリコンと同様に１枚の大型の半導体チップを製造しようとすると、製造歩留まりが低下し、製造コストも高くなってしまう。このため、ワイドバンドギャップ半導体を用いた場合には、１枚の大型の半導体チップではなく、複数の小型の半導体チップがチップ搭載基板に搭載する必要がより生じ得る。
　そして、板厚方向において第１及び第２の表面の位置が異なる構成を有する半導体デバイスでは、第１及び第２の半導体チップをチップ搭載基板に効率的に配置することができる。そのため、板厚方向において第１及び第２の表面の位置が異なる構成は、ワイドバンドギャップ半導体を材料として含む第１及び第２の半導体チップに対してより有効な構成であり得る。
　本発明によれば、チップ搭載基板上に、隣接する半導体チップの間隔をより狭くして複数の半導体チップを配置し得る。
第１実施形態に係る半導体デバイスを模式的に示す平面図である。 ダイパッド(チップ搭載基板)と半導体チップとの搭載状態を示す模式図である。 図３（ａ）は、凸部を有しないダイパッドに２つの半導体チップを配置する場合の搭載工程の一例を示す図面である。図３（ｂ）は凸部を有しないダイパッドに２つの半導体チップを配置する場合の搭載工程の他の例を示す図面である。 図４は、凸部を有するダイパッドに２つの半導体チップを搭載する場合の搭載工程の一例を示す図面である。 第２実施形態に係る半導体デバイスを模式的に示す図である。
　以下、図面を参照して本発明の実施形態について説明する。図面の説明において、同一要素には同一符号を付し、重複する説明を省略する。図面の寸法比率は、説明のものと必ずしも一致していない。説明中、「上」、「下」等の方向を示す語は、図面に示された状態に基づいた便宜的な語である。
（第１実施形態）
　図１は、第１実施形態に係る半導体デバイスを模式的に示す平面図である。図１に示される半導体デバイス１０は、樹脂封止型の半導体デバイスである。半導体デバイス１０は、例えば電源等に使用される電力用半導体デバイスである。半導体デバイス１０のパッケージ形態の例は一般的なＴＯシリーズである。ＴＯシリーズの例はＴＯ－２４７、ＴＯ－２２０、ＴＯ－２６３（Ｄ２―ＰＡＫ）、ＴＯ－２５２（Ｄ－ＰＡＫ）を含む。
　半導体デバイス１０は、ダイパッド１２と、リード１４，１６，１８と、半導体チップ２０ａ（第１の半導体チップ）と、半導体チップ２０ｂ（第２の半導体チップ）と、半導体チップ２０ｃ（第１の半導体チップ）とを備える。
　ダイパッド１２は、半導体チップ２０ａ～２０ｃが搭載されるチップ搭載基板である。ダイパッド１２は、半導体チップ２０ａ～２０ｃと電気的に接続され得る。ダイパッド１２の平面視形状（板厚方向から見た形状）の例は長方形である。ダイパッド１２の材料の例は、銅（Ｃｕ）及び銅合金等の金属を含む。ダイパッド１２には、板厚方向にダイパッド１２を貫通する貫通孔２２が形成され得る。貫通孔２２は、例えば螺子によって半導体デバイス１０を他の部材に固定する際に、螺子を通すための孔である。以下の説明では、ダイパッドの板厚方向をＺ方向と称し、Ｚ方向に直交する２つの方向をＸ方向及びＹ方向と称す。Ｘ方向及びＹ方向は直交する。ダイパッド１２の平面視形状が長方形である場合、Ｘ方向は短辺方向に対応し、Ｙ方向は長辺方向に対応する。
　リード１４，１６，１８はＸ方向に沿って配列される。リード１４は、リード１６とリード１８との間に位置している。リード１４，１６，１８及びダイパッド１２は、リードフレームを構成し得る。リード１４の内側端部は、ダイパッド１２に機械的（換言すれば、物理的）に一体的に連結されている。ダイパッド１２は導電性を有するので、リード１４とダイパッド１２とは電気的に接続されている。リード１４の材料の例はダイパッド１２の材料と同じ材料を含む。リード１６，１８の材料の例は、銅及び銅合金等の金属を含む。
　半導体チップ２０ａ～２０ｃは、ダイパッド１２上の所定位置に搭載される。一例として、半導体チップ２０ａ～２０ｃは、Ｘ方向に沿って、半導体チップ２０ａ、半導体チップ２０ｂ及び半導体チップ２０ｃの順に配置される。半導体チップ２０ａ～２０ｃの例は、ＭＯＳ－ＦＥＴ、絶縁ゲートバイポーラトランジスタ（ＩＧＢＴ）等のトランジスタを含む。半導体チップ２０ａ～２０ｃの材料の例は、ワイドバンドギャップ半導体、シリコンその他の半導体を含む。ワイドバンドギャップ半導体は、シリコンのバンドギャップよりも大きいバンドギャップを有する。ワイドバンドギャップ半導体の例は、シリコンカーバイド（ＳｉＣ）、窒化ガリウム（ＧａＮ）、ダイヤモンドを含む。
　半導体チップ２０ａは、ゲート電極パッドＧＰ１と、電極パッドＳＰ１と、下部電極ＤＰ１（図２参照）とを有する。同様に、半導体チップ２０ｂは、ゲート電極パッドＧＰ２と、電極パッドＳＰ２と、下部電極ＤＰ２（図２参照）とを有する。同様に、半導体チップ２０ｃは、ゲート電極パッドＧＰ３と、電極パッドＳＰ３と、下部電極ＤＰ３（図２参照）とを有する。ゲート電極パッドＧＰ１～ＧＰ３と電極パッドＳＰ１～ＳＰ３とは、対応する下部電極ＤＰ１～ＤＰ３と反対側に配置されている。
　半導体チップ２０ａ～２０ｃの下部電極ＤＰ１～ＤＰ３は、鉛入り金属半田、鉛を含まない金属半田又は導電性樹脂等を含む材料から構成される接着層２４ａ～２４ｃ（図２参照）を介してダイパッド１２に実装される。これにより、半導体チップ２０ａ～２０ｃは、ダイパッド１２に電気的に接続される。
　ゲート電極パッドＧＰ１～ＧＰ３は、配線２６ａ～２６ｃを介してリード１６に接続される。電極パッドＳＰ１～ＳＰ３は、配線２８ａ～２８ｃを介してリード１８にそれぞれ接続される。配線２６ａ～２６ｃ,２８ａ～２８ｃは、ワイヤ又はリボンであってもよい。配線２６ａ～２６ｃ,２８ａ～２８ｃの材料の例は、アルミニウム、金、銅等の金属を含む。配線２６ａ～２６ｃ,２８ａ～２８ｃは、例えば超音波や加圧等を用いたワイヤボンディングによりリード１６，１８及び半導体チップ２０ａ～２０ｃに接続される。
　半導体チップ２０ａ～２０ｃがＭＯＳ－ＦＥＴを含む場合、電極パッドＳＰ１～ＳＰ３はソース電極パッドに対応し、下部電極ＤＰ１～ＤＰ３がドレイン電極に対応する。この場合、リード１４はドレイン電極端子に対応し、リード１６はゲート電極端子に対応し、リード１８はソース電極端子に対応する。半導体チップ２０ａ～２０ｃがＩＧＢＴを含む場合、電極パッドＳＰ１～ＳＰ３はエミッタ電極パッドに対応し、下部電極ＤＰ１～ＤＰ３は、コレクタ電極に対応する。この場合、リード１４はコレクタ電極端子に対応し、リード１６はゲート電極端子に対応し、リード１８はエミッタ電極端子に対応する。なお、図１では、半導体チップ２０ａ～２０ｃがＭＯＳ－ＦＥＴである場合を例示している。
　ダイパッド１２及び半導体チップ２０ａ～２０ｃは、樹脂部３０によって封止され得る。図１では、説明の便宜のため、樹脂部３０を破線で示している。リード１４，１６，１８の内側端部は、樹脂部３０に固定される。リード１４，１６，１８のうち樹脂部３０の内側の部分は、いわゆるインナーリード部である。リード１４，１６，１８のうち樹脂部３０の外側の部分は、アウターリード部である。樹脂部３０の外形形状の一例は、略直方体である。樹脂部３０の材料の例は、ポリフェニレンサルファイド樹脂（ＰＰＳ樹脂）、液晶ポリマー等の熱可塑性樹脂を含む。樹脂部３０は、ダイパッド１２及び半導体チップ２０ａ～２０ｃを熱可塑性樹脂でモールドすることによって形成され得る。樹脂部３０には、ダイパッド１２の貫通孔２２の中心軸線を中心軸線とする貫通孔３２が形成されている。貫通孔３２は、貫通孔２２と同様に螺子止めなどの際などに螺子が通される孔である。貫通孔３２の直径は、貫通孔２２の直径より小さい。
　図２は、ダイパッドと半導体チップとの搭載状態を示す模式図である。図２では、リード１４の一部も模式的に示している。図２に示すようにダイパッド１２は、板状の基体部３４と、基体部３４の主面（第１の表面）３４ａ上に設けられた凸部３６とを有する。凸部３６の形状の例は、Ｙ方向に延在した略直方体である。凸部３６のＸ方向の長さは、半導体チップ２０ｂの幅と実質的に同じであり得る。凸部３６は、基体部３４に物理的に一体的に設けられている。基体部３４と凸部３６とは、例えば、射出成型によって、一体的に形成される。或いは、凸部３６を有するダイパッド１２は、所定の板厚の板から削り出されても良い。基体部３４と凸部３６とが一体的に形成される際には、基体部３４にリード１４が一体的に連結した構成が同時に形成され得る。
　半導体チップ２０ｂは凸部３６の上面（基体部３４と反対側の面、第２の表面）３６ａ上に搭載されている。半導体チップ２０ａ，２０ｃは、主面３４ａ上において凸部３６のＸ方向における両側に配置されている。その結果、半導体チップ２０ｂの搭載位置である上面３６ａは、Ｚ方向において、半導体チップ２０ａ，２０ｃの搭載位置である主面３４ａより高い。一実施形態では、凸部３６の厚さ（Ｚ方向の長さ）ｔは、半導体チップ２０ａ，２０ｃの厚さより厚い。凸部３６の厚さｔは、半導体チップ２０ａ，２０ｃの厚さ以上であってもよい。一実施形態において、主面３４ａと上面３６ａとを繋ぐ凸部３６の側面（接続面）３６ｂ,３６ｂは、実質的に主面３４ａに垂直であり得る。
　ダイパッド１２が凸部３６を有することによって、図１に示したように、Ｘ方向における半導体チップ２０ａ～２０ｃの間隔を、凸部３６を有しない場合に比べて狭く配置し得る。この点について、図３（ａ）及び図３（ｂ）と図４とを利用して説明する。
　図３（ａ）は、凸部を有しないダイパッドに２つの半導体チップを配置する場合の搭載工程の一例を示す図面であり、図３（ｂ）は凸部を有しないダイパッドに２つの半導体チップを配置する場合の搭載工程の他の例を示す図面である。図４は、凸部を有するダイパッドに２つの半導体チップを搭載する場合の搭載工程の一例を示す図面である。図３（ａ）、図３（ｂ）及び図４では、半導体チップ及びダイパッドを模式的に示している。
　図３（ａ）は、印刷ペーストを利用して半導体チップ２０ａ，２０ｂを、凸部を有しない板状のダイパッド３８に固定、すなわち、ダイボンドする場合を示している。この場合、半導体チップ２０ａ，２０ｂが搭載される位置に、チップサイズに対応する大きさを有する開口部４０ａ，４０ｂが設けられた印刷マスク４０を形成する。次に、開口部４０ａ，４０ｂに半田ペースト４２ａ，４２ｂを注入する。次いで、半導体チップ２０ａ，２０ｂを半田ペースト４２ａ，４２ｂ上に載置した後、半田ペースト４２ａ，４２ｂを加熱及び冷却して半導体チップ２０ａ，２０ｂをダイパッド３８上に実装する。この形態では、半田ペースト４２ａ，４２ｂが接着層２４ａ,２４ｂである。
　図３（ｂ）は、搭載治具４４を利用して、半導体チップ２０ａ，２０ｂを、ダイパッド３８に搭載、すなわち、ダイボンドする場合を示している。図３（ｂ）は、印刷マスクの代わりに、半導体チップ２０ａ，２０ｂが搭載される位置に、チップサイズに対応する大きさを有する開口部４４ａ,４４ｂが設けられた搭載治具４４をダイパッド３８上に配置する。次に、半田片４６ａ，４６ｂを開口部４４ａ,４４ｂにそれぞれ配置する。その後、半導体チップ２０ａ，２０ｂを半田片４６ａ，４６ｂ上に載置して半田片４６ａ,４６ｂを加熱及び冷却して半導体チップ２０ａ，２０ｂをダイパッド３８上に実装する。この形態では、半田片４６が接着層２４ａ,２４ｂである。
　図３（ａ）及び図３（ｂ）に示した方法のいずれの場合も、開口部４０ａ,４４ａと開口部４０ｂ,４４ｂとの間には、半導体チップ２０ａ，２０ｂ用の半田ペースト４２ａと半田ペースト４２ｂをそれぞれ分離するため、又は、半田片４６ａと半田片４６ｂをそれぞれ分離するための仕切り部４８が設けられている。その結果、半導体チップ２０ａ，２０ｂの間には、仕切り部４８の幅に対応した隙間が生じる。
　これに対して、凸部３６を有する場合、半導体チップ２０ａと、半導体チップ２０ｂとの高さが異なるので、図４に示したような仕切り部４８が不要になる。したがって、印刷マスク４０や搭載治具４４を用いずに半田ペースト４２ａ,４２ｂ又は半田片４６ａ,４６ｂを主面３４ａ上及び凸部３６上に配置し得る。或いは、図４に示したように、半導体チップ２０ａに対しては、半導体チップ２０ａの搭載位置を規定するためにＵ字状の印刷マスク５０の解放端側を凸部３６に当接させて配置すると共に、半導体チップ２０ｂに対しては、半導体チップ２０ｂの搭載位置を規定するために凸部３６の幅方向に沿って延びる一対の印刷マスク片５２を配置してもよい。この場合、印刷マスク５０と凸部３６で画成される領域及び一対のマスク片５２の間に半導体チップ２０ａ，２０ｂをダイボンドするための半田ペースト４２ａ,４２ｂがそれぞれ配置される。半田ペースト４２ａ,４２ｂを配置した後は、図３（ａ）と同様にして、半導体チップ２０ａ，２０ｂがダイパッド１２に実装され得る。図４に関しては、印刷マスク５０を利用した場合を中心にして説明したが、印刷マスク５０の代わりに同様の形状の搭載治具を利用してもよい。
　凸部３６を有するダイパッド１２の場合、半導体チップ２０ａと半導体チップ２０ｂとをＺ方向に分離できる。そのため、図４を利用して説明したように、半導体チップ２０ａと半導体チップ２０ｂとをそれぞれダイボンドするための半田ペースト４２ａ,４２ｂ（又は半田片４６ａ,４６ｂ）が接触することが防止され得る。従って、半導体チップ２０ａ，２０ｂをダイボンドする際の仕切り部４８を設けなくてもよい。その結果、Ｘ方向における半導体チップ２０ａと半導体チップ２０ｂとの間の隙間を非常に小さくすることが可能である。
　ここでは、半導体チップ２０ａ，２０ｂとのＸ方向の間隔に着目して説明したが、半導体チップ２０ｂ，２０ｃとのＸ方向の間隔についても同様である。したがって、凸部３６を有することによって、半導体チップ２０ａ～２０ｃのうち、隣接する２つの半導体チップのＸ方向の間隔を、凸部３６を有しない場合より短くすることが可能である。この場合、半導体チップ２０ａ～２０ｃの実装面積をより小さくし得る。
　通常、半導体チップ２０ａ～２０ｃは、耐圧特性を得るために、半導体チップ２０ａ～２０ｃの動作領域の周囲に非動作領域が設けられている。そのため、半導体チップ２０ａ，２０ｃを凸部３６の側面に接触させて配置することも可能である。この場合、Ｘ方向における半導体チップ２０ａ，２０ｃと半導体チップ２０ｂとの間隔をほぼ０にし得る。
　凸部３６の厚さが半導体チップ２０ａ，２０ｃの厚さ以上である形態、特に、凸部３６の厚さが半導体チップ２０ａ，２０ｃの厚さより厚い形態では、半導体チップ２０ｂを凸部３６にダイボンドする際に、半導体チップ２０ａ，２０ｃと接着層２４ｂとの接触をより確実に防止できる。
　以上説明したように、ダイパッド１２が凸部３６を有することによって、Ｘ方向における半導体チップ２０ａ～２０ｃのうち隣接する２つの半導体チップのＸ方向における間隔をより近づけて半導体チップ２０ａ～２０ｃを実装し得る。その結果、ダイパッド１２上により多くの半導体チップを搭載可能である。
　ワイドバンドギャップ半導体では、シリコンに比べて、半導体チップの製造歩留まりが低い。また、ワイドバンドギャップ半導体はシリコンに比べて高価である。よって、ワイドバンドギャップ半導体においてもシリコンと同様に１枚の大型の半導体チップを製造しようとすると、製造歩留まりが低下し、製造コストも高くなってしまう。このため、ワイドバンドギャップ半導体を利用する場合には、１枚の大型の半導体チップではなく、複数の小型の半導体チップをダイパッドに搭載する必要が生じ得る。
　そして、半導体デバイス１０の構成では、ワイドバンドギャップ半導体を材料として利用している半導体チップ２０ａ,２０ｂ，２０ｃを一つのダイパッド１２に効率的に配置することができる。従って、半導体デバイス１０の構成は、ワイドバンドギャップ半導体を材料として利用している半導体チップ２０ａ,２０ｂ，２０ｃを採用する場合に、より有効な構成であり得る。
（第２実施形態）
　図５は、第２実施形態に係る半導体デバイスを模式的に示す図である。図５に示される半導体デバイス５４は、ケース型の半導体デバイスである。半導体デバイス５４は、第１及び第２の半導体チップ２０ａ，２０ｂと、ゲート電極端子５６と、電極端子５８と、チップ搭載基板６０と、ケース６２とを備える。
　チップ搭載基板６０は、半導体チップ２０ａ，２０ｂが搭載される基板である。チップ搭載基板６０は、絶縁性基板の表面に配線層が設けられた配線基板である。半導体チップ２０ａ，２０ｂは、チップ搭載基板６０が有する配線層上に接着層２４ａ,２４ｂを介してチップ搭載基板６０上に搭載される。チップ搭載基板６０は、ダイパッド１２の場合と同様に、基体部６４と基体部６４上に設けられた凸部６６とを有する。半導体チップ２０ａは、基体部６４の主面６４ａ上に搭載されると共に、半導体チップ２０ｂは凸部６６上に搭載される。
　チップ搭載基板６０の裏面（半導体チップ２０ａ，２０ｂが搭載される側と反対側の面）には、放熱層６８が設けられてもよい。放熱層６８の材料の例は、銅及び銅合金等の金属を含む。放熱層６８は、例えば半田等からなる接着層７０を介してヒートシンク７２に接着される。ヒートシンク７２の材料の例は、金属を含む。
　半導体チップ２０ａ，２０ｂ、チップ搭載基板６０、及び放熱層６８は、ケース６２に収容される。ケース６２は、例えば筒状である。ケース６２の一方の開口はヒートシンク７２によって封止され得る。ケース６２の他方の開口は蓋７４によって封止され得る。ケース６２の材料の例は、ポリブチレンテレフタレート（ＰＢＴ）やポリフェニレンサルファイド樹脂（ＰＰＳ）といったエンジニヤリングプラスチック等の樹脂を含む。蓋７４の材料の例は熱可塑性樹脂を含む。ケース６２の内側には、応力緩和のため、例えばシリコーンゲル等のゲル７６が注入され得る。
　半導体デバイス５４が備えるゲート電極端子５６及び電極端子５８はケース６２の内壁に取り付けられる。ゲート電極端子５６及び電極端子５８は、ケース６２の内壁に沿って延びており、蓋７４に形成された開口を通って外部に突出する。半導体チップ２０ａ，２０ｂがＭＯＳ－ＦＥＴを含む場合、電極端子５８はソース電極端子に対応する。なお、ドレイン電極端子は図示されていない。
　第２実施形態に係る半導体デバイスでは、少なくとも半導体デバイス１０と同様の作用効果が得られる。
　以上、本発明の好適な実施形態について詳細に説明したが、本発明は上記実施形態に限定されない。
　例えば、半導体デバイス１０は、３つの半導体チップ２０ａ～２０ｃを備えているが、半導体チップ２０ｃを備えなくてもよい。半導体デバイス１０,５４は、４つ以上の半導体チップを備えてもよい。３つ以上の半導体チップを備える場合は、Ｚ方向において複数の半導体チップの搭載位置は、それぞれ異なってもよい。例えば、図１では、半導体チップ２０ａ，２０ｃは、同じ表面である主面３４ａ上に配置されている。しかしながら、半導体チップ２０ａと半導体チップ２０ｃとの搭載位置も、半導体チップ２０ａ及び半導体チップ２０ｃそれぞれと半導体チップ２０ｂとの間に段差が生じていれば、Ｚ方向において異なっていてもよい。
　チップ搭載基板としてのダイパッド１２及びチップ搭載基板６０が有する凸部の形状は直方体に限らない。ただし、チップ搭載基板の板厚方向に直交している方向であって、隣接する第１及び第２の半導体チップの配置方向（図１では例えばＸ方向）において、第１及び第２の半導体チップの間の凸部の側面（第１の半導体チップが接する又は第１の半導体チップに対向する側面）は、第１の半導体チップが搭載される面に対して実質的に垂直であり得る。この場合、上記配置方向において、第１及び第２の半導体チップの間隔をより狭くし得る。
　チップ搭載基板としてのダイパッド１２及びチップ搭載基板６０が有する凸部の数は、２以上でもよい。上記実施形態では、チップ搭載基板が有する凸部上に第２の半導体チップ２０ｂを配置し、凸部以外の領域の第１の半導体チップ２０ａを配置することで、第２の半導体チップ２０ｂのＺ方向の搭載位置が第１の半導体チップ２０ａの搭載位置と異なっていた。しかしながら、隣接する第１の半導体チップ２０ａと第２の半導体チップ２０ｂのＺ方向の搭載位置が異なっていればよい。そのため、例えば、図１に示したＸ方向又はＹ方向など半導体チップを配置する所定の方向に沿って段差を設けておけばよい。
　以上、本発明の実施形態について説明したが、本発明は上記実施形態に限定されずに、本発明の趣旨を逸脱しない範囲で種々変形が可能である。
　１０…半導体デバイス、１２…ダイパッド（チップ搭載基板）、２０ａ, ２０ｃ…半導体チップ（第１の半導体チップ）、２０ｂ…半導体チップ（第２の半導体チップ）、３４…基体部、３４ａ…主面（第１の表面）、３６…凸部、３６ａ…上面（第２の表面）、５４…半導体デバイス、６０…チップ搭載基板、６４…基体部、６４ａ…主面（第１の表面）、６６…凸部。

Claims (5)

  1. 　チップ搭載基板と、
    　前記チップ搭載基板に搭載される第１の半導体チップと、
    　前記第１の半導体チップに隣接しており前記チップ搭載基板に搭載される第２の半導体チップと、
    を備え、
    　前記チップ搭載基板は、
    　前記第１の半導体チップが搭載される第１の表面と、
    　前記第２の半導体チップが搭載される第２の表面と、
    を有し、
    　前記チップ搭載基板の板厚方向において、前記第２の表面の位置は、前記第１の表面の位置と異なる、
    半導体デバイス。
  2. 　前記板厚方向において、前記第２の表面は、前記第１の表面より高く、
    　前記板厚方向における前記第２の表面の位置と前記第１の表面の位置の差は前記第１の半導体チップの厚さ以上である、
    請求項１記載の半導体デバイス。
  3. 　前記チップ搭載基板は、前記第１の表面と前記第２の表面とを繋ぐ接続面を有しており、
    　前記接続面は、前記第１の表面に垂直である、
    請求項１又は２記載の半導体デバイス。
  4. 　前記チップ搭載基板は、
    　板状の基体部と、
    　前記基体部の主面に設けられた凸部と、
    を有し、
    　前記主面が前記第１の表面であり、
    　前記凸部において前記基体部と反対側の表面が前記第２の表面である、
    請求項１～３の何れか一項記載の半導体デバイス。
  5. 　前記第１及び第２の半導体チップの材料は、ワイドバンドギャップ半導体を含む、請求項１～４の何れか一項記載の半導体デバイス。
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