CN209419498U - Igbt模块及其导体安装结构、逆变器 - Google Patents

Igbt模块及其导体安装结构、逆变器 Download PDF

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CN209419498U
CN209419498U CN201920385893.4U CN201920385893U CN209419498U CN 209419498 U CN209419498 U CN 209419498U CN 201920385893 U CN201920385893 U CN 201920385893U CN 209419498 U CN209419498 U CN 209419498U
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conductor
substrate
igbt module
mounting structure
insulation
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万汝斌
朱其姚
冯纪归
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Sungrow Power Supply Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/02Containers; Seals
    • H01L23/04Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/102Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components
    • H01L27/1022Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components including bipolar transistors
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    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02Bonding areas ; Manufacturing methods related thereto
    • H01L24/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/53Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/537Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
    • HELECTRICITY
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    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/11Printed elements for providing electric connections to or between printed circuits
    • H05K1/111Pads for surface mounting, e.g. lay-out
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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    • H01L2224/0555Shape
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    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
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    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09Shape and layout
    • H05K2201/09209Shape and layout details of conductors
    • H05K2201/09654Shape and layout details of conductors covering at least two types of conductors provided for in H05K2201/09218 - H05K2201/095
    • H05K2201/09663Divided layout, i.e. conductors divided in two or more parts
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Abstract

本实用新型公开了一种IGBT模块及其导体安装结构、逆变器,该IGBT模块的导体安装结构包括:基板,导体,外套于导体且绝缘隔离导体和基板的绝缘套。本实用新型公开的IGBT模块的导体安装结构,通过外套在导体上的绝缘套绝缘隔离导体和基板,提高了IGBT模块的相对漏电起痕指数,从而提高了IGBT模块的爬电距离;同时,较现有技术采用喷涂绝缘漆或绝缘胶相比,绝缘套的绝缘性较易检测也较易保证,还便于保证绝缘套与基板的结合力,降低了绝缘失效的风险,提高了绝缘可靠性。

Description

IGBT模块及其导体安装结构、逆变器
技术领域
本实用新型涉及光伏并网技术领域,更具体地说,涉及一种IGBT模块及其导体安装结构、逆变器。
背景技术
并网光伏发电系统中,逆变器作为光伏发电系统和电网的接口设备。在应用过程中,逆变器首先要满足安规要求。当光伏发电系统的电压较高时,逆变器的IGBT(InsulatedGate Bipolar Transistor)模块无法满足安规要求,具体地,IGBT模块的爬电距离无法满足要求。
目前,通过在IGBT模块的表面喷涂绝缘漆或者绝缘胶,以绝缘隔离IGBT模块中的导体和基板,来提高IGBT模块的相对漏电起痕指数,从而提高耐爬电性能,以满足爬电距离要求。
但是,喷涂工艺的一致性较难控制,无法判定喷涂的有效性;另外,绝缘漆或绝缘胶与基板的结合力不足,较易出现缝隙,无法检测喷涂后是否满足标准要求,存在绝缘失效风险,导致逆变器失效,可靠性较低。
综上所述,如何增大IGBT模块的爬电距离,同时提高可靠性,是目前本领域技术人员亟待解决的问题。
实用新型内容
有鉴于此,本实用新型的目的是提供一种IGBT模块的导体安装结构,增大IGBT模块的爬电距离,同时提高绝缘可靠性。本实用新型的另一目的是提供一种具有上述导体安装结构的IGBT模块、以及一种具有上述IGBT模块的逆变器。
为了达到上述目的,本实用新型提供如下技术方案:
一种IGBT模块的导体安装结构,包括:基板,导体,外套于所述导体且绝缘隔离所述导体和所述基板的绝缘套。
优选地,所述绝缘套固定在所述基板上。
优选地,所述绝缘套包括:外套于所述导体的绝缘套管,与所述绝缘套管的周向侧壁固定相连的绝缘板;其中,所述绝缘板位于所述导体所在所述基板的安装面上。
优选地,所述绝缘板靠近所述基板边缘的一侧具有外延部,所述外延部外凸于所述导体所在所述基板的安装面的外侧边。
优选地,所述绝缘板和/或所述绝缘套管固定于所述基板上。
优选地,当所述绝缘板固定于所述基板上时,所述绝缘板通过卡接固定于所述基板上。
优选地,所述绝缘板设置有与所述基板卡接的台阶结构。
优选地,当所述绝缘套管固定于所述基板上时,所述绝缘套管插接于所述基板的沟槽内。
优选地,所述绝缘板的顶端设置有支撑凸起,所述支撑凸起用于支撑所述IGBT模块的电路板。
优选地,所述绝缘套管的端面呈方形或圆形。
本实用新型提供的IGBT模块的导体安装结构,通过外套在导体上的绝缘套绝缘隔离导体和基板,提高了IGBT模块的相对漏电起痕指数,从而提高了IGBT模块的爬电距离;同时,较现有技术采用喷涂绝缘漆或绝缘胶相比,绝缘套的绝缘性较易检测也较易保证,还便于保证绝缘套与基板的结合力,降低了绝缘失效的风险,提高了绝缘可靠性。
基于上述提供的IGBT模块的导体安装结构,本实用新型还提供了一种IGBT模块,该IGBT模块具有上述任一项所述的IGBT模块的导体安装结构。
基于上述提供的IGBT模块,本实用新型还提供了一种逆变器,该逆变器包括IGBT模块,该IGBT模块为上述IGBT模块。
附图说明
为了更清楚地说明本实用新型实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本实用新型的实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据提供的附图获得其他的附图。
图1为本实用新型实施例提供的IGBT模块的导体安装结构中绝缘套的结构示意图;
图2为图1中绝缘套套的另一方向的结构示意图;
图3为本实用新型实施例提供的IGBT模块的导体安装结构的结构示意图;
图4为本实用新型实施例提供的IGBT模块的导体安装结构的主视图;
图5为图4的A-A向剖视图;
图6为图5的局部放大图;
图7为本实用新型实施例提供的IGBT模块的导体安装结构的俯视图;
图8为图7的B-B向剖视图;
图9为图8的局部放大图。
具体实施方式
下面将结合本实用新型实施例中的附图,对本实用新型实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本实用新型一部分实施例,而不是全部的实施例。基于本实用新型中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本实用新型保护的范围。
如图1-9所示,本实用新型实施例提供的IGBT模块的导体安装结构包括:基板1,导体2,外套于导体2且绝缘隔离导体2和基板1的绝缘套3。
本实用新型实施例提供的IGBT模块的导体安装结构,通过外套在导体2上的绝缘套3绝缘隔离导体2和基板1,提高了IGBT模块的相对漏电起痕指数,从而提高了IGBT模块的爬电距离;同时,较现有技术采用喷涂绝缘漆或绝缘胶相比,绝缘套3的绝缘性较易检测也较易保证,还便于保证绝缘套3与基板1的结合力,降低了绝缘失效的风险,提高了绝缘可靠性。
为了便于安装绝缘套3以及提高绝缘可靠性,上述绝缘套3包括:外套于导体2的绝缘套管31,与绝缘套管31的周向侧壁固定相连的绝缘板32;其中,绝缘板32位于导体2所在基板1的安装面上。
上述绝缘套3中,绝缘板32和绝缘套管31可一一对应,也可不一一对应。具体地,绝缘板32上可设置一个绝缘套管31,也可设置至少两个绝缘套管31。
当然,也可选择上述绝缘套3仅包括绝缘套管31、不包括绝缘板32,并不局限于上述实施例。
进一步地,上述绝缘板32靠近基板1边缘的一侧具有外延部35,外延部35外凸于导体2所在基板1的安装面的外侧边11。可以理解的是,外侧边11是指安装面靠近基板1边缘的侧边,即外侧边11是指安装面远离基板1中心的侧边。
上述绝缘套3通过外延部35增加了整个IGBT模块的爬电安规距离,进一步提高了IGBT模块的安规性能。
在实际应用过程中,可通过调整外延部35的尺寸满足不同电压等级的安规距离要求,提高了通用性。具体地,对于外延部35外凸于外侧边11的距离,根据实际所需的安规距离进行选择,本实用新型实施例对此不做限定。
上述绝缘套3中,外延部35与绝缘板32可为一体式结构,也可为两个单独的部件且绝缘相连。
为了减小绝缘板32的体积,上述绝缘板32靠近基板1中心的内侧边和绝缘套管31平齐设置,如图6所示。
上述绝缘套管31远离基板1边缘的一侧,即绝缘套管31靠近基板1中心的一侧,可设置开口,也可不设置开口,根据实际需要进行选择,本实用新型实施例对此不做限定。
可以理解的是,当绝缘板32具有外延部35时,开口和外延部35分别位于绝缘套管31轴线的两侧。
对于上述开口的大小和形状,根据实际需要进行选择,本实用新型实施例对此不做限定。
为了便于安装,上述绝缘套管31的内孔底部自基板1的顶端至基板1的底端呈渐扩状,如图6所示。当然,也可选择上述绝缘套管31的内孔为其他形状,并不局限于此。
上述绝缘套3固定在IGBT模块中,以保证运行可靠性。为了便于固定,优先选择上述绝缘套3固定在基板1上。当绝缘套3包括绝缘板32时,优先选择绝缘板32固定于基板1上,即绝缘套3通过绝缘板32固定于基板1上实现了整个绝缘套3固定在基板1上。
对于绝缘板32的固定方式,可根据实际需要进行选择,例如卡接、粘接等。为了便于安装,优先选择上述绝缘板32通过卡接固定于基板1。进一步地,上述绝缘板32设置有与基板1卡接的台阶结构34,这样安装更简单便捷。当然,也可选择绝缘板32通过其他卡接结构与基板1卡接,例如卡勾、卡槽等,本实用新型实施例对此不做限定。
上述绝缘套3也可选择绝缘套管31固定在基板1上,即绝缘套3通过绝缘套管31固定于基板1上实现了整个绝缘套3固定在基板1上。优选地,上述绝缘套3插接于基板1的沟槽内。这样,充分利用了基板1现有的沟槽,简化了结构,方便了固定。当然,也可选择其他方式来固定连接绝缘套管31和基板1,例如粘接等,本实用新型实施例对此不做限定。
当绝缘套管31固定在基板1上时,则绝缘套管31的底端外伸于绝缘板32的底侧。绝缘套管31的顶端可与绝缘板32平齐,也可外伸于绝缘板32的顶侧。
在实际应用过程中,为了增强稳固性和可靠性,优先选择绝缘板32和绝缘套管31均固定在基板1上。
为了安装IGBT模块的电路板,上述绝缘板32的顶端设置有支撑凸起33,该支撑凸起33用于支撑IGBT模块的电路板。
对于支撑凸起33的数目和形状,根据实际需要进行选择,例如,绝缘板32呈方形时,优先选择支撑凸起33为四个,分布在绝缘板32的各个顶角处。本实用新型实施例对此不做限定。
上述结构通过支撑凸起33支撑电路板,相应的,也实现了电路板对绝缘板32的压紧,提高了固定可靠性。
对于绝缘套管31和绝缘板32的形状,根据实际需要进行选择。例如,绝缘套管31的端面呈方形、圆形、或椭圆形等,绝缘板32呈方形或圆形等。可以理解的是,方形是长方形和正方形的总称。
为了简化安装,上述绝缘套管31和绝缘板32为一体式结构。当然,也可选择绝缘套管31和绝缘板32为两个单独的部件,通过连接件或连接结构固定连接。
上述IGBT模块的导体安装结构中,导体2可为PIN针,也可为其他能够导电的部件,本实用新型实施例对导体2的具体类型不做限定。
可以理解的是,上述PIN(Pin needle)针是连接器中用来完成电的导电或信号传输的一种金属部件。
基于上述实施例提供的IGBT模块的导体安装结构,本实用新型实施例还提供了一种IGBT模块,该IGBT模块具有上述实施例所述的IGBT模块的导体安装结构。
由于上述IGBT模块的导体安装结构具有上述技术效果,上述IGBT模块具有上述IGBT模块的导体安装结构,则上述IGBT模块也具有相应的技术效果,本文不再赘述。
对于上述IGBT模块的具体类型,可根据实际需要进行选择,本实用新型实施例对此不做限定。
基于上述实施例提供的IGBT模块,本实用新型实施例还提供了一种逆变器,该逆变器包括IGBT模块,该IGBT模块为上述实施例所述的IGBT模块。
由于上述IGBT模块具有上述技术效果,上述逆变器包括IGBT模块,则上述逆变器也具有相应的技术效果,本文不再赘述。
对于上述逆变器的具体类型和应用,可根据实际需要进行选择,本实用新型实施例对此不做限定。
对所公开的实施例的上述说明,使本领域技术人员能够实现或使用本实用新型。对这些实施例的多种修改对本领域技术人员来说将是显而易见的,本文中所定义的一般原理可以在不脱离本实用新型的精神或范围的情况下,在其它实施例中实现。因此,本实用新型将不会被限制于本文所示的这些实施例,而是要符合与本文所公开的原理和新颖特点相一致的最宽的范围。

Claims (12)

1.一种IGBT模块的导体安装结构,其特征在于,包括:基板(1),导体(2),外套于所述导体(2)且绝缘隔离所述导体(2)和所述基板(1)的绝缘套(3)。
2.根据权利要求1所述的导体安装结构,其特征在于,所述绝缘套(3)固定在所述基板(1)上。
3.根据权利要求1或2所述的导体安装结构,其特征在于,所述绝缘套(3)包括:外套于所述导体(2)的绝缘套管(31),与所述绝缘套管(31)的周向侧壁固定相连的绝缘板(32);其中,所述绝缘板(32)位于所述导体(2)所在所述基板(1)的安装面上。
4.根据权利要求3所述的导体安装结构,其特征在于,所述绝缘板(32)靠近所述基板(1)边缘的一侧具有外延部(35),所述外延部(35)外凸于所述导体(2)所在所述基板(1)的安装面的外侧边(11)。
5.根据权利要求3所述的导体安装结构,其特征在于,所述绝缘板(32)和/或所述绝缘套管(31)固定于所述基板(1)上。
6.根据权利要求5所述的导体安装结构,其特征在于,当所述绝缘板(32)固定于所述基板(1)上时,所述绝缘板(32)通过卡接固定于所述基板(1)上。
7.根据权利要求6所述的导体安装结构,其特征在于,所述绝缘板(32)设置有与所述基板(1)卡接的台阶结构(34)。
8.根据权利要求5所述的导体安装结构,其特征在于,当所述绝缘套管(31)固定于所述基板(1)上时,所述绝缘套管(31)插接于所述基板(1)的沟槽内。
9.根据权利要求3所述的导体安装结构,其特征在于,所述绝缘板(32)的顶端设置有支撑凸起(33),所述支撑凸起(33)用于支撑所述IGBT模块的电路板。
10.根据权利要求3所述的导体安装结构,其特征在于,所述绝缘套管(31)的端面呈方形或圆形。
11.一种IGBT模块,其特征在于,具有如权利要求1-10中任一项所述的导体安装结构。
12.一种逆变器,包括IGBT模块,其特征在于,所述IGBT模块为如权利要求11所述的IGBT模块。
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