JP2017028132A - 半導体モジュール及び半導体モジュールの製造方法 - Google Patents
半導体モジュール及び半導体モジュールの製造方法 Download PDFInfo
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- JP2017028132A JP2017028132A JP2015146103A JP2015146103A JP2017028132A JP 2017028132 A JP2017028132 A JP 2017028132A JP 2015146103 A JP2015146103 A JP 2015146103A JP 2015146103 A JP2015146103 A JP 2015146103A JP 2017028132 A JP2017028132 A JP 2017028132A
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- insulating substrate
- conductive plate
- gel
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- semiconductor module
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Abstract
【解決手段】
本発明の半導体モジュール100は、絶縁基板1、前記絶縁基板の第1の主面上にあって前記絶縁基板の外縁よりも内側に配置された第1の導電板2、前記第1の主面に対向する前記絶縁基板の第2の主面上にあって前記絶縁基板の外縁よりも内側に配置された第2の導電板3を有する絶縁回路基板4を備える。そして、前記絶縁基板の第1の主面と前記第1の導電板の側面との交差部Aは、イオン液体を含むイオンゲル5によって被覆されている。
【選択図】図1
Description
図6には、絶縁耐圧評価サンプル200の断面図が示されている。厚さ1mmのAlN絶縁基板1の両面に、それぞれ厚さ0.2mmのAlの第1の導電板2及び第2の導電板3を有する、絶縁回路基板4(電気化学工業株式会社製、デンカAlNプレート)を用いた。この絶縁回路基板4の、絶縁基板1の外縁と第1の導電板2との最短距離(第1の額縁長)は、1.5mmで、絶縁基板1の外縁と第2の導電板3との最短距離(第2の額縁長)は0.5mmである。次に、イオン液体として1−エチル−3−メチルイミダゾリウム ビストリフルオロメタンスルフォニルイミド(EMIM TFSI)1質量部と、ゲル材料としてポリ(スチレン−b−メチルメタクリレート−b−スチレン)トリブロック共重合体(PS−PMMA−PS)5質量部と、溶媒としてエチルアセテート15質量部を混合したイオンゲル前駆材料を調製し、インクジェット印刷機を用いて、絶縁基板1の第1主面と第1の導電板2の側面との交差部Aを被覆するように塗布し、100℃で加熱固化させて、交差部Aにイオンゲル5を形成した。次に、絶縁回路基板4を、Sn−40Pbはんだ(ニホンハンダ株式会社製)を介して、Al−SiCのベース板9(電気化学工業製、アルシンク)上に接合し、外部接続端子11を有するケース12に収納し、ケース12にシリコーンゲルの封止材14(モメンティブ・パフォーマンス・マテリアルズ・ジャパン製、TSE3051SK)を充填し100℃で1時間加熱して固化させた後、ケース12に蓋13を接着剤で接着し、絶縁耐圧評価サンプル200とした。なお、本サンプルは絶縁耐圧の評価に限定して使用するので、半導体素子は配設しなかった。
絶縁回路基板4(電気化学工業株式会社製、デンカAlNプレート)のAlN絶縁基板厚さを0.625mmしたこと以外は実施例1と同様に作製した。
絶縁回路基板4(電気化学工業株式会社製、デンカSNプレート)に厚さ0.625mmのSiN絶縁基板を用いたこと以外は実施例1と同様に作製した。
交差部Aにはイオンゲル5を配設せず、AlN絶縁基板1の厚さは0.625mmとした。その他は実施例1と同様に作製した。
上記の絶縁基板1の第1の主面に配置された第1の導電板2と、絶縁基板の第2の主面に配置された第2の導電板3との間に、周波数50Hz、振幅6kVの交流電圧を1分間印加し、絶縁破壊しなかったものを合格、絶縁破壊したものを不合格とした。
絶縁耐圧の評価結果を表1に示した。実施例1によって、厚さ1mmのAlN基板1で絶縁破壊評価に合格したことを確認し、実施例2で、AlN基板1の厚さを0.625mmと薄くしたが、絶縁基板1の第1主面と第1の導電板2の側面との交差部Aにイオンゲル5を配置したことにより電界集中が緩和され、絶縁基板1は絶縁破壊せず、絶縁破壊評価に合格した。しかしながら、比較例1では、交差部Aにイオンゲル5が配置されていないために電界集中が十分緩和されず、厚さ0.625mmのAlN基板1の絶縁破壊評価は不合格であった。また、実施例3では、厚さ0.625mmのSiN基板1を用い、絶縁基板1の第1主面と第1の導電板2の側面との交差部Aにイオンゲル5を配置することによって、絶縁基板1を0.625mmまで薄くしても、絶縁破壊評価に合格することを確認した。よって、交差部Aにイオンゲル5を配置することによって、絶縁基板を厚さ0.625mmまで薄くすることができた。
2,2a,2b 第1の導電板
3 第2の導電板
4 絶縁回路基板
5 イオンゲル
6 はんだ
7 半導体素子
8 はんだ
9 ベース板
10 ワイヤ
11 外部接続端子
12 ケース
13 蓋
14 封止材
100 半導体モジュール
200 絶縁耐圧評価サンプル
A,B 絶縁基板1の第1主面と第1の導電板2の側面との交差部
A’ 絶縁基板1の第2主面と第2の導電板3の側面との交差部
Claims (5)
- 絶縁基板、前記絶縁基板の第1の主面上にあって前記絶縁基板の外縁よりも内側に配置された第1の導電板、前記第1の主面に対向する前記絶縁基板の第2の主面上にあって前記絶縁基板の外縁よりも内側に配置された第2の導電板を有する、絶縁回路基板と、
前記絶縁基板の第1の主面と前記第1の導電板の側面との交差部を被覆するイオン液体を含むイオンゲルと、
前記第1の導電板に接合される半導体素子と、
前記絶縁回路基板、前記イオンゲル、及び前記半導体素子を被覆する封止材と、
を備えることを特徴とする半導体モジュール。 - 前記イオンゲルは、有機カチオンと有機アニオン、もしくは有機カチオンと無機アニオンの組み合わせによって構成される、常温溶融塩のイオン液体を含む、高分子樹脂のゲル材料である請求項1記載の半導体モジュール。
- 前記イオンゲルには、イオンゲルの単位面積あたりの静電容量が、1μF/cm2以上、20μF/cm2以下となるように、イオン液体が配合されている請求項2記載の半導体モジュール。
- 絶縁基板、前記絶縁基板の第1の主面上にあって前記絶縁基板の外縁よりも内側に配置された第1の導電板、前記第1の主面に対向する前記絶縁基板の第2の主面上にあって前記絶縁基板の外縁よりも内側に配置された第2の導電板を有する半導体モジュールの製造方法において、
前記絶縁基板の第1の主面と前記第1の導電板の側面との交差部に、イオン液体を含むイオンゲルの前駆材料を塗布するイオンゲル塗布工程と、
前記イオンゲルの前駆材料を固化させるイオンゲル固化工程と、
前記第1の導電板に半導体素子を接合する半導体素子接合工程と、
前記絶縁回路基板、前記イオンゲル、及び前記半導体素子を封止材によって被覆する封止材被覆工程と、
を備える半導体モジュールの製造方法。 - 前記塗布工程において、イオン液体を含むイオンゲルの前駆材料をインクジェット法又はディスペンス法によって塗布する請求項4記載の半導体モジュールの製造方法。
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0851170A (ja) * | 1994-08-08 | 1996-02-20 | Tokuyama Corp | 半導体素子搭載用基板 |
JP2000340719A (ja) * | 1999-05-26 | 2000-12-08 | Hitachi Ltd | パワー半導体装置 |
JP2002522904A (ja) * | 1998-08-05 | 2002-07-23 | インフィネオン テクノロジース アクチエンゲゼルシャフト | 高電圧モジュール用の基板 |
JP2013257482A (ja) * | 2012-06-14 | 2013-12-26 | Sony Corp | 調光器、撮像素子および表示装置 |
JP2014229643A (ja) * | 2013-05-20 | 2014-12-08 | 富士電機株式会社 | 有機トランジスタ及びその製造方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3703978B2 (ja) | 1998-11-13 | 2005-10-05 | 株式会社東芝 | 半導体装置 |
US8004075B2 (en) * | 2006-04-25 | 2011-08-23 | Hitachi, Ltd. | Semiconductor power module including epoxy resin coating |
JP2010056244A (ja) * | 2008-08-27 | 2010-03-11 | Toshiba Corp | 半導体装置 |
JP5345017B2 (ja) * | 2009-08-27 | 2013-11-20 | 三菱電機株式会社 | 電力用半導体装置とその製造方法 |
JP2012079914A (ja) * | 2010-10-01 | 2012-04-19 | Mitsubishi Electric Corp | パワーモジュールおよびその製造方法 |
KR101896665B1 (ko) * | 2012-01-11 | 2018-09-07 | 삼성전자주식회사 | 반도체 패키지 |
JP5656907B2 (ja) * | 2012-04-11 | 2015-01-21 | 三菱電機株式会社 | パワーモジュール |
US8716864B2 (en) * | 2012-06-07 | 2014-05-06 | Ixys Corporation | Solderless die attach to a direct bonded aluminum substrate |
JP5924164B2 (ja) * | 2012-07-06 | 2016-05-25 | 株式会社豊田自動織機 | 半導体装置 |
JP5831401B2 (ja) * | 2012-08-24 | 2015-12-09 | 三菱電機株式会社 | 半導体装置 |
US9349628B2 (en) * | 2013-02-25 | 2016-05-24 | Advanced Micro Devices, Inc. | Method and an alignment plate for engaging a stiffener frame and a circuit board |
US9673118B2 (en) * | 2013-11-26 | 2017-06-06 | Mitsubishi Electric Corporation | Power module and method of manufacturing power module |
-
2015
- 2015-07-23 JP JP2015146103A patent/JP6540324B2/ja active Active
-
2016
- 2016-06-09 US US15/177,658 patent/US9818687B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0851170A (ja) * | 1994-08-08 | 1996-02-20 | Tokuyama Corp | 半導体素子搭載用基板 |
JP2002522904A (ja) * | 1998-08-05 | 2002-07-23 | インフィネオン テクノロジース アクチエンゲゼルシャフト | 高電圧モジュール用の基板 |
JP2000340719A (ja) * | 1999-05-26 | 2000-12-08 | Hitachi Ltd | パワー半導体装置 |
JP2013257482A (ja) * | 2012-06-14 | 2013-12-26 | Sony Corp | 調光器、撮像素子および表示装置 |
JP2014229643A (ja) * | 2013-05-20 | 2014-12-08 | 富士電機株式会社 | 有機トランジスタ及びその製造方法 |
Cited By (14)
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JP2018098442A (ja) * | 2016-12-16 | 2018-06-21 | 富士電機株式会社 | 半導体装置 |
WO2018159152A1 (ja) * | 2017-03-03 | 2018-09-07 | 三菱電機株式会社 | 半導体装置 |
JPWO2018159152A1 (ja) * | 2017-03-03 | 2019-06-27 | 三菱電機株式会社 | 半導体装置 |
DE112017007351B4 (de) | 2017-03-29 | 2023-02-23 | Mitsubishi Electric Corporation | Leistungshalbleitermodul |
JP6395173B1 (ja) * | 2017-03-29 | 2018-09-26 | 三菱電機株式会社 | パワー半導体モジュール |
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JP7221930B2 (ja) | 2017-07-12 | 2023-02-14 | ヒタチ・エナジー・スウィツァーランド・アクチェンゲゼルシャフト | パワー半導体モジュール |
US11545409B2 (en) | 2020-02-05 | 2023-01-03 | Fuji Electric Co., Ltd. | Semiconductor module having block electrode bonded to collector electrode and manufacturing method thereof |
DE102021200016A1 (de) | 2020-02-05 | 2021-08-05 | Fuji Electric Co., Ltd. | Halbleitermodul und verfahren zum herstellen eines halbleitermoduls |
WO2021229673A1 (ja) * | 2020-05-12 | 2021-11-18 | 三菱電機株式会社 | 電力用半導体装置 |
JPWO2021229673A1 (ja) * | 2020-05-12 | 2021-11-18 |
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