CN107093587B - 半导体装置及其制造方法 - Google Patents

半导体装置及其制造方法 Download PDF

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CN107093587B
CN107093587B CN201611233908.2A CN201611233908A CN107093587B CN 107093587 B CN107093587 B CN 107093587B CN 201611233908 A CN201611233908 A CN 201611233908A CN 107093587 B CN107093587 B CN 107093587B
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resin layer
semiconductor element
semiconductor device
semiconductor
lead
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CN107093587A (zh
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金井直之
堀元人
金子悟史
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Fuji Electric Co Ltd
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Fuji Electric Co Ltd
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Abstract

本发明提供一种半导体装置及其制造方法。所述半导体装置保护引线的接合部。半导体装置(100)具备：半导体元件(12)，其在表面具有电极；引线(15)，其与半导体元件(12)的电极接合；树脂层(22b)，其覆盖半导体元件(12)的表面的引线(15)的接合部；以及凝胶填充材料(23)，其密封半导体元件(12)、引线(15)和树脂层(22b)。通过利用树脂层(22b)对引线(15)的接合部进行保护，从而能够缓和其劣化，提高半导体装置(100)的可靠性。

Description

半导体装置及其制造方法
技术领域
本发明涉及半导体装置及其制造方法。
背景技术
在太阳能发电、风力发电等可再生能源领域、混合动力汽车、电动汽车等车载领域和车辆等的铁道领域那样的要求高效的电力变换的领域中，广泛利用功率半导体装置(也简称为半导体装置)。在此，在半导体装置中搭载有碳化硅(SiC)化合物半导体元件等新一代半导体元件。例如在专利文献1中公开了使SiC二极管与硅(Si)半导体开关元件反向并联连接而得到的半导体装置。SiC化合物半导体元件相对于现有的Si半导体元件绝缘破坏电场强度高，因此是高耐压的，另外能够进一步提高杂质浓度，且进一步减薄活性层，因此能够实现高效率且能够高速动作的小型的半导体装置。
专利文献1：日本特开2004-95670号公报
发明内容
技术问题
然而，SiC化合物半导体元件虽然可以耐受高温下的使用，但存在因芯片结温上升而导致电极膜和引线接合部劣化，作为半导体装置的可靠性降低的问题。
另外，在半导体装置中要求大的电流容量，另一方面，因为不充分结晶品质而无法使SiC化合物半导体元件构成为大到Si半导体元件的程度，因此必须将设置于半导体元件的周边的电场缓和区域(也称为保护环)设计得窄。在此，由于电场集中在窄的保护环上，所以还存在可能在半导体元件与将其密封的凝胶填充材料的界面发生绝缘破坏的问题。
技术方案
在本发明的第一形态中，提供一种半导体装置，具备：第一半导体元件，其具有第一正面电极和第一保护环；第二半导体元件，其具有第二正面电极和第二保护环；第一引线，其与第一正面电极接合；第二引线，其与第二正面电极接合；第一树脂层，其覆盖第一保护环和第二保护环中的至少一个；以及凝胶填充材料，其密封第一半导体元件和第二半导体元件、第一引线和第二引线、以及第一树脂层。
在本发明的第二形态中，提供一种半导体装置的制造方法，具备：将第一引线接合到具有第一正面电极的第一半导体元件的第一正面电极的步骤；形成覆盖第一正面电极与第一引线的第一接合部的第二树脂层的步骤；以及利用凝胶填充材料密封第一半导体元件、第一引线和第二树脂层的步骤。
应予说明，上述的发明内容未列举本发明的所有特征。另外，这些特征群的再组合也能够成为发明。
附图说明
图1A在关于图1B的基准线AA的俯视图中示出本实施方式的半导体装置的构成。
图1B在关于图1A的基准线BB的侧视图中示出本实施方式的半导体装置的截面构成。
图2表示半导体装置的第一制造方法的流程。
图3表示在半导体装置的第一制造方法中安装有半导体元件的状态。
图4表示在半导体装置的第一制造方法中形成有第二树脂层的状态。
图5表示在半导体装置的第一制造方法中进行了引线键合的状态。
图6表示在半导体装置的第一制造方法中形成有第一树脂层的状态。
图7表示在半导体装置的第一制造方法中利用凝胶填充材料进行了密封的状态。
图8表示半导体装置的第二制造方法的流程。
图9表示在半导体装置的第二制造方法中安装有半导体元件的状态。
图10表示在半导体装置的第二制造方法中进行了引线键合的状态。
图11表示在半导体装置的第二制造方法中形成有树脂层的状态。
图12表示在半导体装置的第二制造方法中利用凝胶填充材料进行了密封的状态。
符号说明
1：壳体
1a：基底基板
2：罩
2a：开口
3：绝缘基板
3a：绝缘板
3b：金属层
3c：布线层
3c1、3c2、3c3：布线图案
5、6、7：端子
11：半导体元件
11a：发射极
11b：栅极
11c：保护环
12：半导体元件
12a：阳极
12b：保护环
15、16、17：引线
21(21a、21b)：树脂层(第一树脂层、第二树脂层)
22(22a、22b)：树脂层(第一树脂层、第二树脂层)
23：凝胶填充材料
100：半导体装置
具体实施方式
以下，通过发明的实施方式说明本发明，但以下的实施方式不限定于权利要求的发明。另外，实施方式中说明的特征的所有组合并不限定为发明的解决方案所必须的。
图1A和图1B表示本实施方式的半导体装置100的构成。这里，图1A表示在关于图1B的基准线AA的俯视图中的构成，图1B表示在关于图1A的基准线BB的侧视图中的截面构成。半导体装置100具有以下目的：通过使用树脂层保护搭载于其上的半导体元件的电极与引线的接合部，从而确保半导体装置的可靠性，并且通过使用树脂层保护半导体元件的保护环，从而提高半导体装置的耐压性，半导体装置100具备：壳体1、罩2、绝缘基板3、端子5、6和7、半导体元件11和12、引线15、16和17、树脂层21和22和凝胶填充材料23。
壳体1是收容半导体装置100的构成各部的框体，包括作为基底基板1a的壳体1的底部。基底基板1a支撑其上的半导体装置100的构成各部。基底基板1a可以采用散热性高的铜(Cu)基板、铝碳化硅复合材料(Al-SiC)基板等。应予说明，可以通过单独地形成构成壳体1的底部的基底基板1a和构成侧部的框体，并将框体立设在基底基板1a的周边上而形成壳体1。
罩2是平板状的盖体，其载置在壳体1的侧部上并将半导体装置100的构成各部封入到壳体1内。罩2形成有用于使端子5、6和7的上端向壳体1外突出的多个开口2a。
绝缘基板3是搭载半导体元件11和12的基板，例如可以采用DCB(DirectCopperBonding：直接铜键合)基板、AMB(Active Metal Blazing：活性金属钎焊)基板等。绝缘基板3包括绝缘板3a、金属层3b、布线层3c。绝缘板3a是由例如氮化铝、氮化硅、氧化铝等绝缘性陶瓷构成为例如0.2～1mm厚度的板状部件。金属层3b使用铜、铝等导电性金属，例如为0.1～1mm的膜厚，且设置于绝缘板3a的下表面。应予说明，出于防锈等目的，可以使用镍等对金属层3b的表面进行镀覆处理。布线层3c与金属层3b同样地使用铜、铝等导电性金属，且设置于绝缘板3a的上表面。绝缘基板3借由焊锡等接合材料(未图示)固定在基底基板1a上。
绝缘基板3的布线层3c具有3种布线图案3c1、3c2和3c3。布线图案3c1具有矩形形状，配设于绝缘板3a上的附图左侧约三分之二的区域内。在布线图案3c1并排设置有后述的半导体元件11和12。布线图案3c2和布线图案3c3具有矩形形状，并排设置于绝缘板3a上的附图右侧约三分之一的区域内。
端子5、6和7是用于向半导体元件11输入外部信号，或者用于将电流从半导体元件11输入输出到外部的输入输出用端子。端子5、6和7例如使用铜、铝等导电性金属成型为圆柱状或平板状。端子5在布线层3c的布线图案3c1的左端附近立设有2个。端子5借由布线图案3c1与后述的半导体元件11的集电极和半导体元件12的阴极连接。端子6在布线层3c的布线图案3c2上立设有2个。端子6借由布线图案3c2和引线15、引线16与半导体元件11的发射极11a和半导体元件12的阳极12a连接。端子7在布线层3c的布线图案3c3上立设有1个。端子7借由布线图案3c3和引线17与半导体元件11的栅极11b连接。端子5、6和7利用焊锡等接合材料(未图示)立设在布线图案上，并使各自的前端通过罩2的开口2a向壳体1外突出。应予说明，端子5、6和7可以预先嵌件成型于壳体1或罩2。
半导体元件11是组装于本实施方式的半导体装置100的Si半导体元件，例如可以采用在正面和背面分别具有电极的纵向型的功率金属氧化物半导体场效应晶体管(功率MOSFET)、绝缘栅双极晶体管(IGBT)等。应予说明，半导体元件11不限于纵向型的元件，可以是仅在正面设置有电极的横向型的元件。在半导体元件11为IGBT(或功率MOSFET)的情况下，在正面具有发射极(或源极)11a和栅极11b，并且在这些电极的周围或正面的边缘部具有保护环11c，在背面具有集电极(或漏极(未图示))。半导体元件11利用焊锡等接合材料(未图示)将集电极(或漏极)与布线层3c的布线图案3c1连接，由此利用其背面固定在绝缘基板3上。
半导体元件12是组装于本实施方式的半导体装置100的SiC半导体二极管，作为一个例子，可以采用与半导体元件11反向并联连接的肖特基势垒二极管(SBD)。半导体元件12在正面具有阳极12a，在其周围或正面的边缘部具有保护环12b，在背面具有阴极(未图示)。半导体元件12利用焊锡等接合材料(未图示)将阴极与布线层3c的布线图案3c1连接，由此利用其背面固定在绝缘基板3上。应予说明，半导体元件12的阴极通过布线层3c的布线图案3c1与半导体元件11的集电极连接。
引线15、16和17是接合到半导体元件11和12的正面电极间或者将这些正面电极与布线图案3c1和布线图案3c2接合的引线状的部件。引线15、16和17使用例如铜、铝等导电性金属或铁铝合金等导电性合金，例如相对于高耐压装置形成为直径300～500μm。引线15包括多个(在本实施方式中，作为一个例子为4个)引线，其两端与半导体元件11的正面电极即发射极11a和半导体元件12的正面电极即阳极12a接合。引线16包括多个(在本实施方式中，作为一个例子为4个)引线，将半导体元件11的正面电极，即发射极11a与布线图案3c2连接。引线17包括1个引线(也可以包括多个引线)，将半导体元件11的正面电极，即栅极11b与布线图案3c3连接。应予说明，引线15和引线16可以由半导体元件11的电极通过针脚式接合(Stitch bonding)一体地构成，由从半导体元件12的正面电极起接连布线图案3c3的引线进行布线。
树脂层21和22是分别覆盖半导体元件11和12的正面，并保护引线15、16和17的接合部以及保护环11c和保护环12b的部件。树脂层21和22例如包括聚酰亚胺树脂(玻璃化转变温度Tg为324℃)、聚酰胺酰亚胺树脂(玻璃化转变温度Tg为275℃)等聚酰亚胺。
如果采用SiC器件作为半导体元件11或12，则可以预料到其芯片结温(Tjmax)例如上升到175℃为止，因此使用具有比该温度足够高的、例如200℃以上的玻璃化转变温度Tg的聚酰亚胺。另外，在制造工序中，在将半导体装置100放置在更高温度下的情况下，可以使用具有更高的玻璃化转变温度的聚酰亚胺。这样，能够维持树脂层21和22的硬度并将引线15、16和17固定于半导体元件11和12的电极，并且保护与各引线的电极的接合部。在此，在半导体元件11和12的正面电极的结构不同的情况下，必须与此相对应地将各引线在各自适当的条件下与电极接合。对此，通过由树脂层21和22覆盖，能够不依赖于正面电极的结构，在相同的条件下将各引线均与电极接合。
另外，使树脂层21和22的膜厚例如为10～50μm。由此，能够得到电场缓和效果，特别是能够维持在保护环11c和保护环12b与凝胶填充材料23的界面的绝缘性。应予说明，利用树脂层21和22得到的电场缓和的效果对于50μm以上的膜厚没有多大提高。
树脂层21一体地包括第一树脂层21a和第二树脂层21b。第一树脂层21a设置于半导体元件11的正面的周边，并覆盖半导体元件11的保护环11c。第二树脂层21b设置于半导体元件11的正面的中央，并覆盖引线15和引线16与发射极11a接合的接合部以及引线17与栅极11b接合的接合部。应予说明，树脂层21可以分别作为独立的部分包括第一树脂层21a和第二树脂层21b。
树脂层22一体地包括第一树脂层22a和第二树脂层22b。第一树脂层22a设置于半导体元件12的正面的周边，并覆盖半导体元件12的保护环12b。第二树脂层22b设置于半导体元件12的正面的中央，并覆盖引线15与阳极12a接合的接合部。应予说明，树脂层22可以分别作为独立的部分包括第一树脂层22a和第二树脂层22b。
应予说明，树脂层21和22也可以至少部分地包括布线图案3c1的表面并一体地设置于半导体元件11和12的两个正面上。由此，也能够缓和在半导体元件11和12的侧面产生的电场强度。在此，可以利用树脂层21和22覆盖整个引线15。另外，也可以在引线16与布线层3c的布线图案3c2的接合部以及引线17与布线图案3c3的接合部设置树脂层，覆盖布线图案3c2和3c3。在该情况下，树脂层21和22可以至少部分地包括布线图案3c1、3c2和3c3的表面并一体地设置于半导体元件11和12的两个正面上。在此，可以利用树脂层21和22覆盖整个引线15、16和17。通过覆盖整个引线，从而能够防止因振动等导致引线变形，能够减少在引线接合部产生的负荷，进一步提高可靠性。
凝胶填充材料23是用于密封半导体装置100的构成各部的部件，作为一个例子，可以使用硅凝胶。凝胶填充材料23是在壳体1内(基底基板1a上)配设绝缘基板3、半导体元件11和12、端子5、6和7、引线15、16和17以及树脂层21和22之后，填充于它们之上。此外，通过将罩2载置于壳体1的侧部上，从而将构成各部封入到壳体1内。应予说明，引线15、16和17的除了通过树脂层21和22覆盖的接合部以外的剩余的部分露出到凝胶填充材料23中。
在图2中示出半导体装置100的第一制造方法的流程。
在步骤S1中，安装半导体元件11和12。如图3所示，首先，借由焊锡等接合材料(未图示)将绝缘基板3配设于基底基板1a上(壳体1内)。接下来，借由焊锡等接合材料(未图示)将半导体元件11和12并排设置于绝缘基板3的布线层3c中的布线图案3c1上。接着，利用焊锡等接合材料(未图示)将端子5、6和7分别立设在布线图案3c1、3c2和3c3上。最后，通过使用回流焊炉将接合材料回流焊，从而在基底基板1a上接合绝缘基板3，在绝缘基板3的布线图案3c1上接合半导体元件11和12，在绝缘基板3的布线图案3c1、3c2和3c3上分别接合端子5、6和7的下端。
应予说明，回流焊炉在使用板状焊锡作为接合材料的情况下，在使用H2回流焊炉，在加入了助熔剂的焊锡的情况下，可以利用N2回流焊炉。另外，在使用焊锡作为接合材料的情况下，优选使用例如Sn-Ag-Cu系、Sn-Sb系、Sn-Sb-Ag系、Sn-Cu系、Sn-Sb-Ag-Cu系、Sn-Cu-Ni系、Sn-Ag系等无铅焊锡。
在步骤S2中，形成第一树脂层21a和22a。
如图4所示，例如利用喷墨涂布装置或分配(Dispenser)涂布装置将聚酰亚胺涂布于半导体元件11的正面的周边，并使其干燥，由此形成第一树脂层21a。利用第一树脂层21a覆盖半导体元件11的保护环11c。
同样地，将聚酰亚胺涂布于半导体元件12的正面的周边，并使其干燥，由此形成第一树脂层22a。利用第一树脂层22a覆盖半导体元件12的保护环12b。应予说明，步骤S2必须在后述的步骤S3中的引线接合之前(但是，无需紧接着引线接合进行)进行。
在步骤S3中，接合引线15、16和17。如图5所示，首先，将引线15的两端分别与半导体元件11的正面电极即发射极11a以及半导体元件12的正面电极即阳极12a接合。接下来，将引线16的两端分别与半导体元件11的正面电极即发射极11a以及布线图案3c2接合。最后，将引线17的两端分别与半导体元件11的正面电极即栅极11b以及布线图案3c3接合。
在步骤S4中，形成第二树脂层21b和22b。
如图6所示，例如利用分配涂布装置将聚酰亚胺涂布在半导体元件11的正面的中央，并使其干燥，从而形成第二树脂层21b。利用第二树脂层21b覆盖引线15和16与半导体元件11的发射极11a接合的接合部以及引线17与栅极11b接合的接合部。在此，可以以与形成于半导体元件11的正面的周边的第一树脂层21a至少部分重叠的方式涂布聚酰亚胺，从而与第一树脂层21a一体地形成第二树脂层21b而作为一体的树脂层21，也可以通过与第一树脂层21a不重叠地涂布，从而作为与第一树脂层21a独立的部分来形成第二树脂层21b。
同样地，通过将聚酰亚胺涂布于半导体元件12的正面的中央，并使其干燥而形成第二树脂层22b。利用第二树脂层22b覆盖引线15与半导体元件12的阳极12a接合的接合部。在此，可以通过与形成于半导体元件12的正面的周边的第一树脂层22a至少部分重叠地涂布聚酰亚胺，从而与第一树脂层22a一体地形成第二树脂层22b而作为一体的树脂层22，也可以通过与第一树脂层22a重叠地涂布，从而作为与第一树脂层22a独立的部分来形成第二树脂层22b。
应予说明，在之前的步骤S2中，在半导体元件11和12的正面的周边涂布聚酰亚胺而形成第一树脂层21a和22a之后，在步骤S4中，在半导体元件11的正面的中央，即第一树脂层21a和22a的内侧涂布聚酰亚胺而形成第二树脂层21b和22b，由此能够不发生聚酰亚胺越过第一树脂层21a和22a而涂布到半导体元件11和12的正面外的情况，另外能够以比第一树脂层21a和22a厚的厚度形成第二树脂层21b和22b。
在步骤S5中，利用凝胶填充材料23密封半导体装置100的构成各部。如图7所示，首先，将凝胶填充材料23填充到绝缘基板3、半导体元件11和12、端子5、6和7、引线15、16和17以及树脂层21和22之上。接下来，使端子5、6和7的上端通过罩2的开口2a而将罩2载置于壳体1的侧部上。最后，将罩2接合于壳体1。
应予说明，在第一制造方法中，利用分别不同的工序(即步骤S2和S4)在半导体元件11上形成第一树脂层21a和第二树脂层21b，同样地利用分别不同的工序(即步骤S2和S4)在半导体元件12上形成第一树脂层22a和第二树脂层22b，但也可以代替上述步骤，在相同的工序中，将第一树脂层21a和第二树脂层21b一体地，即作为一体的树脂层21形成在半导体元件11上，同样可以将第一树脂层22a和第二树脂层22b一体地，即作为一体的树脂层22形成在半导体元件12上。
在图8中示出半导体装置100的第二制造方法的流程。
在步骤S11中，安装半导体元件11和12。如图9所示，将绝缘基板3配设在基底基板1a上(壳体1内)，将半导体元件11和12并排设置在绝缘基板3的布线层3c中的布线图案3c1上，将端子5、6和7分别立设在布线图案3c1、3c2和3c3上。详细情况与之前的步骤S1相同。
在步骤S12中，接合引线15、16和17。如图10所示，将引线15的两端分别与半导体元件11的发射极11a和半导体元件12的阳极12a接合，将引线16的两端分别与半导体元件11的发射极11a和布线图案3c2接合，将引线17的两端分别与半导体元件11的栅极11b和布线图案3c3接合。详细情况与之前的步骤S3相同。
在步骤S13中，形成树脂层21和22。
如图11所示，例如利用分配涂布装置将聚酰亚胺涂布于半导体元件11的整个正面，并使其干燥，从而形成树脂层21。利用树脂层21覆盖引线15和16与半导体元件11的发射极11a接合的接合部以及引线17与栅极11b接合的接合部，并且覆盖半导体元件11的保护环11c。
同样地，将聚酰亚胺涂布于半导体元件12的整个正面，并使其干燥，从而形成树脂层22。利用树脂层22覆盖引线15与半导体元件12的阳极12a接合的接合部，并且覆盖半导体元件12的保护环12b。
在步骤S14中，利用凝胶填充材料23密封半导体装置100的构成各部。如图12所示，将凝胶填充材料23填充到壳体1内，将罩2载置在壳体1的侧部上并接合。详细情况与之前的步骤S5相同。
【实施例】
以下，举出实施例进一步具体说明本发明，但该实施例不限定本发明的范围。
《实施例1》
根据第二制造方法制造了半导体装置100。应予说明，作为绝缘基板3，使用厚度为1.0mm的绝缘板3a、厚度为0.2mm的金属层3b和布线层3c、布线层3c的端部与绝缘板3a的端部的间隔距离(边框长)为1.5mm以及金属层3b的端部与绝缘板3a的端部的间隔距离(边框长)为0.5mm的DENKA(デンカ，商标)AlN板(Al电路AlN基板，電気化学工業制)。另外，作为半导体元件11和12，使用Si半导体IGBT和SiC半导体SBD。另外，作为基底基板1a，使用AlSiC基板(電気化学工業制)。
另外，在步骤S11中，作为用于将半导体元件11和12接合在绝缘基板3上的接合材料，使用焊锡(Sn-8Sb-3Ag，日本ハンダ制颗粒)。另外，作为用于将绝缘基板3接合在基底基板1a上的接合材料，使用焊锡(Sn-40Pb，日本ハンダ制颗粒)。
另外，在步骤S12中，作为引线15、16和17，使用直径400μm的铝引线。
另外，在步骤S13中，作为涂布于半导体元件11和12的整个正面(即，正面的周边和中央这两方)的聚酰亚胺，使用UPIA(ユピア(注册商标)宇部興産制，玻璃化转变温度324℃)，作为分配涂布装置，使用SHOTMASTER((注册商标)武蔵エンジニアリング制)，以膜厚50μm进行涂布。
另外，在步骤S14中，作为凝胶填充材料23，使用了TSE3051SK(モメンティブ·パフォーマンス·マテリアルズ·ジャパン制)。另外，将该凝胶填充材料23填充到壳体1内，在100℃下加热1小时。另外，使用粘接剂将罩2接合在壳体1的侧部上。
《比较例1》
省略步骤S13而不形成树脂层21和22，除此以外，与实施例1同样地制造。
《比较例2》
将在步骤S13中使用的聚酰亚胺改变为CT4112A1(京セラケミカル制，玻璃化转变温度170℃)，除此以外，与实施例1同样地制造。
《比较例3》
在步骤S13中，仅在半导体元件11和12的正面的周边涂布聚酰亚胺，利用树脂层(相当于第一树脂层21a和22a)仅覆盖保护环11c和12b，除此以外，与实施例1同样地制造。
《比较例4》
在步骤S13中，仅在半导体元件11和12的正面的中央涂布聚酰亚胺，利用树脂层仅覆盖引线15、16和17的接合部，除此以外，与实施例1同样地制造。
《比较例5》
将树脂层的膜厚设为8μm，除此以外，与实施例1同样地制造。
《评价》
对于实施例1和比较例1～4的各半导体装置，使用施加试验装置(CS-5400，岩通制)，在150℃的温度下进行施加反向偏压3.3kV的试验，评价在半导体装置中，特别是在半导体元件12与凝胶填充材料23的界面发生绝缘破坏的台数(称为破坏台数)。应予说明，该破坏台数体现半导体装置的绝缘耐压。另外，进行温度25℃和150℃下的功率循环评价(芯片结温为150℃)，评价热阻的变化率超过20％的功率循环数(称为功率循环耐量)。绝缘耐压越高(即，破坏台数少)且功率循环耐量越高(即，功率循环数大)意味着可靠性越高。
【表1】
Figure BDA0001194988590000121
对于实施例1的半导体装置，评价为：通过加压试验得到的破坏台数为每100台的半导体装置为0台，功率循环数为30万次循环。判断如下：使用玻璃化转变温度为200度以上的聚酰亚胺在半导体元件12的整个正面形成树脂层22，首先，由于对保护环12b进行了保护，因此半导体元件12的正面与凝胶填充材料23之间的电场强度的集中得到缓和，绝缘耐压得到提高，此外，由于对引线15的接合部进行了保护，因此抑制了半导体元件12的电极膜的劣化和引线裂纹的产生，功率循环耐量得到提高。
对于比较例1的半导体装置，评价为：通过加压试验得到的破坏台数为每100台的半导体装置为6台，功率循环数为15万次循环。该评价表明了，由于在半导体元件12的正面未形成树脂层22，保护环12b未得到保护，所以在半导体元件12的正面与凝胶填充材料23的界面电场集中而产生绝缘破坏，另外，由于引线15与阳极12a接合的接合部未得到保护，所以发生了电极膜的劣化和/或产生引线裂纹。
对于比较例2的半导体装置，评价为：通过加压试验得到的破坏台数为每100台的半导体装置为2台，功率循环数为20万循环。相对于在半导体元件12的表面未形成树脂层22且保护环12b和引线15的接合部均未得到保护的比较例1，绝缘耐压和功率循环耐量均提高。但是，其程度明显小于实施例1的半导体装置。该评价表明了，通过使用相对于在实施例1的半导体装置中使用的聚酰亚胺而玻璃化转变温度更低的聚酰亚胺来形成树脂层22，从而在加压试验和功率循环评价的温度下，树脂层22的物理性质发生变化，无法充分保护保护环12b和引线15的接合部。
对于比较例3的半导体装置，评价为：通过加压试验得到的破坏台数与实施例1同样为每100台的半导体装置为0台，但是，功率循环数为15万循环。该评价表明了，与比较例1同样地由于在半导体元件12的正面的中央未形成树脂层22，引线15与阳极12a接合的接合部未得到保护，所以发生电极膜的劣化和/或产生引线裂纹。
对于比较例4的半导体装置，评价为：功率循环数与实施例1同样为30万循环，但是，通过加压试验得到的破坏台数为每100台的半导体装置为6台。该评价表明了，与比较例1同样地由于在半导体元件12的表面的周边未形成树脂层22，保护环12b未得到保护，所以在半导体元件12的表面与凝胶填充材料23的界面电场集中而产生绝缘破坏。
对于比较例5的半导体装置，评价为：功率循环数与实施例1同样地为30万循环，但是，通过加压试验得到的破坏台数为每100台的半导体装置为4台。该评价表明了，由于树脂层22的膜厚薄至8μm，所以并未发挥较好的电场缓和的效果。
根据以上的评价，本实施方式的半导体装置100通过使用树脂层对搭载于其上的半导体元件的电极与引线的接合部进行保护，从而确保半导体装置的可靠性，并且，通过使用树脂层保护半导体元件的保护环，从而能够提高半导体装置的耐压性。
应予说明，在本实施方式的半导体装置100中，半导体元件11不限于由Si半导体构成的Si半导体器件，另外，半导体元件12不限于由SiC半导体构成的SiC半导体器件，也可以是由任意的半导体构成的半导体器件。另外，半导体元件11和12可以是单一的半导体器件或者任意数目的半导体器件的组合。
以上，使用实施方式说明了本发明，但本发明的技术的范围不限于上述实施方式中记载的范围。本领域技术人员会明白可以对上述实施方式进行各种变更或改良。根据权利要求书的记载可知，对上述实施方式进行的各种变更或改良的方式显然也包括在本发明的技术方案内。
应当注意的是，在权利要求书、说明书和附图中所示的装置、系统、程序和方法中的动作、顺序、步骤和步骤等各处理的执行顺序并未特别明确“在……之前”、“事先”等，另外，只要不是后续处理中需要使用之前处理的结果，就可以按任意顺序实现。方便起见，对权利要求书、说明书和附图中的动作流程使用“首先”、“接下来”等进行说明，也不表示一定要按照该顺序实施。

Claims (15)

1.一种半导体装置，其特征在于，具备：
第一半导体元件，其具有第一正面电极和第一保护环；
第二半导体元件，其具有第二正面电极和第二保护环；
基板，其具有一并设置有所述第一半导体元件和所述第二半导体元件的布线图案；
第一引线，其与所述第一正面电极接合；
第二引线，其与所述第二正面电极接合；
第一树脂层，其覆盖所述第一保护环和所述第二保护环中的至少一个；以及
凝胶填充材料，其密封所述第一半导体元件和所述第二半导体元件、所述第一引线和所述第二引线、以及所述第一树脂层，
所述第一树脂层覆盖所述布线图案的至少一部分。
2.根据权利要求1所述的半导体装置，其特征在于，还具备：
第二树脂层，其覆盖所述第一正面电极与所述第一引线的第一接合部，以及所述第二正面电极与所述第二引线的第二接合部中的至少一个接合部。
3.根据权利要求2所述的半导体装置，其特征在于，
所述第二树脂层的厚度比所述第一树脂层的厚度大。
4.根据权利要求1所述的半导体装置，其特征在于，所述第一树脂层包括聚酰亚胺。
5.根据权利要求4所述的半导体装置，其特征在于，所述聚酰亚胺的玻璃化转变温度为200℃以上。
6.根据权利要求1所述的半导体装置，其特征在于，所述第一树脂层的厚度为10μm～50μm。
7.根据权利要求2所述的半导体装置，其特征在于，所述第二树脂层的厚度为10μm～50μm。
8.根据权利要求1所述的半导体装置，其特征在于，所述凝胶填充材料包括硅凝胶。
9.根据权利要求1所述的半导体装置，其特征在于，所述第一半导体元件为SiC半导体元件，
所述第二半导体元件为Si半导体元件或SiC半导体元件。
10.根据权利要求1～7中任一项记载的半导体装置，其特征在于，所述半导体装置还具备：
壳体，其在内部空间配设有所述第一半导体元件、所述第二半导体元件、所述基板、所述第一引线、第二引线和所述第一树脂层，且在该内部空间填充有所述凝胶填充材料。
11.一种半导体装置的制造方法，其特征在于，具备：
将具有第一正面电极和第一保护环的第一半导体元件安装于基板的布线图案上的步骤；
形成覆盖所述第一保护环和所述布线图案的至少一部分的第一树脂层的步骤；
将第一引线接合到所述第一正面电极的步骤；
形成覆盖所述第一正面电极与所述第一引线的第一接合部的第二树脂层的步骤；以及
利用凝胶填充材料密封所述第一半导体元件、所述第一引线和所述第二树脂层的步骤。
12.根据权利要求11所述的制造方法，其特征在于，在形成所述第二树脂层的步骤中，以比所述第一树脂层的厚度大的厚度形成所述第二树脂层。
13.根据权利要求11或12所述的制造方法，其特征在于，还具备：形成覆盖位于所述第一半导体元件的正面的边缘部的所述第一保护环并与所述第二树脂层一体或分开的第一树脂层的步骤。
14.根据权利要求13所述的制造方法，其特征在于，在形成所述第一树脂层的步骤中，在将第一引线接合到所述第一半导体元件的第一正面电极之前形成所述第一树脂层。
15.根据权利要求13所述的制造方法，其特征在于，在形成所述第一树脂层的步骤中，利用喷墨涂布装置涂布覆盖所述保护环的树脂来形成所述第一树脂层，
在形成所述第二树脂层的步骤中，利用分配涂布装置涂布覆盖所述第一半导体元件的正面中的所述引线的接合部的树脂以形成所述第二树脂层。
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