CN106898590A - 功率半导体装置及其制造方法 - Google Patents

功率半导体装置及其制造方法 Download PDF

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Publication number
CN106898590A
CN106898590A CN201611190869.2A CN201611190869A CN106898590A CN 106898590 A CN106898590 A CN 106898590A CN 201611190869 A CN201611190869 A CN 201611190869A CN 106898590 A CN106898590 A CN 106898590A
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Prior art keywords
grafting material
distribution component
component
power
semiconductor element
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CN201611190869.2A
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Inventor
日野泰成
新井规由
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Publication of CN106898590A publication Critical patent/CN106898590A/zh
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Abstract

在功率半导体装置(1)处，IGBT(11a)的集电极电极通过接合材料(9)而与金属板(5)接合。二极管(11b)的阴极电极通过接合材料(9)而与金属板(5)接合。配线部件(15a)通过接合材料(13)而与IGBT(11a)的发射极电极接合。接合材料(13)由接合材料(13a)和接合材料(13b)构成。接合材料(13a)介于IGBT(11a)与配线部件(15a)之间。接合材料(13b)填充于在配线部件(15a)形成的通孔(16a)。接合材料(13b)到达接合材料(13a)，与接合材料(13a)连接。

Description

功率半导体装置及其制造方法
技术领域
本发明涉及一种功率半导体装置及其制造方法，特别涉及一种电力的控制所使用的功率半导体装置和该功率半导体装置的制造方法。
背景技术
功率半导体装置被用于工业设备、具有电动机的家电的驱动控制设备、面向电动汽车、混合动力汽车的车载控制设备、铁路控制设备以及太阳能发电的控制设备等。因此，要求功率半导体装置适用于大电力。作为公开了功率半导体装置的专利文献的例子，有专利文献1(日本特开2015-024443号公报)、专利文献2(日本特开2012-178513号公报)以及专利文献3(日本特开2013-220476号公报)。
近年，随着环境管制变严，进一步地要求功率半导体装置实现顾及到环境问题的高效率和节能化。特别是对于车载控制设备或者铁路控制设备，从节能化的观点以及对与电能的变换相伴的损失进行抑制的观点出发，功率半导体装置是在高负载的环境下(高温的环境下)进行使用的(高Tj化)。
因此，要求功率半导体装置在高温的环境下，也对损失进行抑制，并且高效率地进行动作。具体地说，现有的功率半导体装置的通常的工作温度为Tj小于或等于125℃、或者Tj小于或等于150℃，与此相对地，预想今后是在Tj大于或等于175℃、或者Tj大于或等于200℃的高温的环境下使功率半导体装置进行动作。
为了使功率半导体装置(半导体模块)在高温的环境下进行动作，对功率半导体装置的材料和构造重新进行了探讨。特别是在高温的环境下，要求功率半导体装置的半导体元件与配线部件等的接合强度。在利用以Sn为基础的焊料而将半导体元件与配线部件等进行了接合的功率半导体装置的情况下，在高温的环境下，半导体元件与配线部件等的接合部分的耐久性存在问题。
发明内容
本发明就是作为上述开发的一个环节而提出的，其目的在于提供一种半导体元件与配线部件等的接合强度得到改善的功率半导体装置，另一个目的在于提供上述功率半导体装置的制造方法。
本发明涉及的功率半导体装置具有半导体元件、导体部、散热板、接合材料以及封装材料。半导体元件包含第1功率元件，该第1功率元件具有相对的第1表面及第2表面。散热板包含第1导体板，该第1导体板与第1功率元件的第1表面接合。导体部包含第1配线部件，该第1配线部件与第1功率元件的第2表面接合而与第1功率元件电连接。接合材料包含第1接合材料及第2接合材料，该第1接合材料将第1功率元件的第1表面与第1导体板进行接合，该第2接合材料将第1功率元件的第2表面与第1配线部件进行接合。封装材料将半导体元件、导体部以及散热板进行封装。接合材料包含金属间化合物。第2接合材料具有第1部分和第2部分。第1部分介于第1功率元件的第2表面与第1配线部件之间。第2部分贯穿第1配线部件而与第1部分连接。
本发明涉及的功率半导体装置的制造方法具有下面的工序。准备包含第1导体板的散热板。在第1导体板涂敷第1接合材料。在第1接合材料之上载置半导体元件。在半导体元件涂敷第2接合材料第1部分。准备形成有通孔的第1配线部件。以在通孔露出第2接合材料第1部分的方式，将第1配线部件载置于第2接合材料第1部分之上，对第1配线部件进行保持。以到达第2接合材料第1部分的方式，在通孔填充涂敷第2接合材料第2部分。对第1接合材料、第2接合材料第1部分以及第2接合材料第2部分实施热处理。将半导体元件、散热板以及第1配线部件配置于模具。通过在模具内填充封装材料，将半导体元件、散热板以及第1配线部件进行封装。将由封装材料封装的半导体元件、散热板以及第1配线部件从模具取出。在对第1接合材料、第2接合材料第1部分以及第2接合材料第2部分各自进行涂敷的工序中，使用包含锡(Sn)的颗粒和从铜(Cu)、镍(Ni)以及银(Ag)中选择的至少任意金属的颗粒的材料。在实施热处理的工序中，形成任意金属与所述锡(Sn)的金属间化合物。
根据本发明涉及的功率半导体装置，接合材料包含金属间化合物，该接合材料包含第1接合材料及第2接合材料，该第1接合材料将第1功率元件与第1导体板进行接合，该第2接合材料将第1功率元件与第1配线部件进行接合。另外，第2接合材料具有第1部分和第2部分，该第1部分介于第1功率元件的第2表面与第1配线部件之间，该第2部分贯穿第1配线部件而与第1部分连接。由此，能够提高第1功率元件与散热板的接合强度，并且能够提高第1功率元件与第1配线部件的接合强度。
根据本发明涉及的功率半导体装置的制造方法，通过对将第1功率元件与第1导体板进行接合的第1接合材料、以及将第1功率元件与第1配线部件进行接合的第2接合材料第1部分及第2接合材料第2部分实施热处理，形成金属间化合物。由此，能够制造一种提高了第1功率元件与散热板的接合强度、第1功率元件与第1配线部件的接合强度的功率半导体装置。
通过与附图相关联地进行理解的、与本发明相关的下面的详细说明，本发明的上述及其他目的、特征、方案以及优点会变得明了。
附图说明
图1是实施方式1涉及的功率半导体装置的局部俯视图。
图2是同一实施方式中图1所示的剖面线II-II处的剖视图。
图3是表示同一实施方式中功率半导体装置的制造方法的一个工序的剖视图。
图4是表示同一实施方式中在图3所示的工序之后进行的工序的剖视图。
图5是表示同一实施方式中在图4所示的工序之后进行的工序的剖视图。
图6是表示同一实施方式中在图5所示的工序之后进行的工序的剖视图。
图7是表示同一实施方式中在图6所示的工序之后进行的工序的剖视图。
图8是表示同一实施方式中在图7所示的工序之后进行的工序的剖视图。
图9是表示同一实施方式中在图8所示的工序之后进行的工序的剖视图。
图10是实施方式2涉及的功率半导体装置的局部俯视图。
图11是同一实施方式中图10所示的剖面线XI-XI处的剖视图。
图12是表示同一实施方式中功率半导体装置的制造方法的一个工序的剖视图。
图13是表示同一实施方式中在图12所示的工序之后进行的工序的剖视图。
图14是表示同一实施方式中在图13所示的工序之后进行的工序的剖视图。
图15是表示同一实施方式中在图14所示的工序之后进行的工序的剖视图。
图16是表示同一实施方式中在图15所示的工序之后进行的工序的剖视图。
图17是表示同一实施方式中在图16所示的工序之后进行的工序的剖视图。
具体实施方式
实施方式1
对实施方式1涉及的功率半导体装置进行说明。如图1及图2所示，在功率半导体装置1处，半导体元件11搭载于散热板3。与半导体元件11连接有配线部件15a及配线部件15b。半导体元件11、散热板3以及配线部件15a、15b由模塑树脂17进行封装。
对功率半导体装置1的构造更详细地进行说明。在这里，作为半导体元件11的例子而示出IGBT(Insulated Gate Bipolar Transistor)11a及二极管11b。IGBT 11a及二极管11b是由例如一边的长度约为7mm～15mm左右的矩形的硅(Si)或者碳化硅(SiC)形成的。
在IGBT 11a及二极管11b各自的表面和背面形成有电极。电极是由铝(Al)或者铝硅(AlSi)形成的。在电极的表面，作为包覆层而形成有钛镍金(Ti-Ni-Au)膜。
在IGBT 11a的背面形成有集电极电极(未图示)。在IGBT 11a的表面形成有栅极电极及发射极电极(均未图示)。在二极管11b的背面形成有阳极电极(未图示)。在二极管11b的表面形成有阴极电极(未图示)。
散热板3是由金属板5和绝缘金属层7形成的。金属板5的导热率较高，约为400W/m·k左右。金属板5的电阻率较低，约为2μΩ·cm左右。金属板5是由例如铜或者铜合金等金属形成的。金属板5的厚度例如约为3～5mm左右。
绝缘金属层7固接于金属板5的背面。绝缘金属层7为绝缘层和保护金属层的层叠构造。作为绝缘层而应用了例如混入有氮化硼及氧化铝等填料的环氧树脂。作为保护金属层而应用了导热性较高的、铜或者铝这样的金属层。绝缘层和保护金属层相互固接。
IGBT 11a的集电极电极通过接合材料9而与金属板5接合。二极管11b的阴极电极通过接合材料9而与金属板5接合。IGBT 11a的集电极电极与二极管11b的阴极电极经由导电性的接合材料9及金属板5而电连接。
配线部件15a通过接合材料13而与IGBT 11a的发射极电极接合。接合材料13由接合材料13a和接合材料13b构成。接合材料13a介于IGBT 11a与配线部件15a之间。接合材料13b填充于在配线部件15a形成的通孔16a。接合材料13b到达接合材料13a，与接合材料13a连接。另外，配线部件15b通过接合材料13而与IGBT 11a的栅极电极接合。
并且，配线部件15a通过接合材料13而与二极管11b的阳极电极接合。接合材料13由接合材料13a和接合材料13b构成。接合材料13a介于二极管11b与配线部件15a之间。接合材料13b填充于在配线部件15a形成的通孔16b。接合材料13b到达接合材料13a，与接合材料13a连接。IGBT 11a的发射极电极与二极管11b的阳极电极经由导电性的接合材料13及配线部件15a而电连接。
另外，与金属板5通过导电性的接合材料(未图示)而接合有配线部件15c。配线部件15a、配线部件15b以及配线部件15c从模塑树脂17凸出，例如与外部的设备(未图示)电连接。IGBT 11a及二极管11b由来自外部的信号对导通动作和截止动作进行控制。
导电性的接合材料9、13是通过对包含金属颗粒的膏状的材料实施热处理(低温烧结)而作为接合材料发挥作用的。在热处理中，进行利用了由纳米尺寸化而引起的熔点降低这一点的低温烧结。作为金属颗粒而应用将锡(Sn)的颗粒与从铜(Cu)、镍(Ni)以及银(Ag)中选择的至少任意金属的颗粒组合后的金属颗粒。
金属的颗粒的大小为例如几十nm～几十μm左右。通过低温烧结，形成由这些金属构成的金属间化合物。通过形成金属间化合物，从而得到充分的接合强度。另外，作为接合材料9、13来说，得到高熔点，能够确保高耐热性。低温烧结后的接合材料9、13的厚度例如约为50μm左右。
下面，对上述的功率半导体装置1的制造方法的一个例子进行说明。首先，如图3所示，准备由铜或者铜合金等金属形成的规定尺寸的金属板5。接下来，如图4所示，通过例如丝网印刷法等，在金属板5的搭载半导体元件的区域涂敷接合材料9。在进行低温烧结之前，该接合材料9为包含金属颗粒的膏状的接合材料。
接下来，如图5所示，在膏状的接合材料9之上载置半导体元件11(IGBT 11a、二极管11b)。接下来，如图6所示，通过例如丝网印刷法等，在半导体元件11的与配线部件进行接合的区域涂敷接合材料13(13a)。在进行低温烧结之前，该接合材料13也为包含金属颗粒的膏状的接合材料。
接下来，准备配线部件15a及配线部件15b等(参照图7)。在配线部件15a形成有通孔16a、16b。接下来，如图7所示，将配线部件15a及配线部件15b等载置于接合材料13之上，利用固定工具(未图示)进行保持。此时，例如通过施加小于或等于1MPa的压力，能够从膏状的接合材料9、13挤出成为孔洞的产生要因的溶剂。
接下来，如图8所示，在配线部件15a的通孔16a、16b填充接合材料13(13b)。接下来，例如在温度约为200℃～300℃的条件下，实施热处理(低温烧结)(液相扩散接合)。通过实施热处理，由所含有的金属颗粒形成金属间化合物。热处理后的接合材料9、13的耐热温度约为500℃～900℃。
接下来，如图9所示，将接合了半导体元件11及配线部件15a等的金属板5与绝缘金属层7一起配置于下模具21的腔室内。接下来，配置上模具23，利用下模具21和上模具23夹着配线部件15a、15b。接下来，在下模具21及上模具23的腔室内注入树脂(未图示)。树脂的主要成分为环氧树脂。金属板5、半导体元件11以及配线部件15a等由模塑树脂17(参照图2)进行封装。另外，利用模塑树脂17，能够使绝缘金属层7密接于金属板5。
然后，将下模具21和上模具23卸除，如图2所示，完成由模塑树脂17封装的功率半导体装置1。
就上述的功率半导体装置而言，半导体元件11与其他部件(金属板5、配线部件15a等)通过包含金属间化合物的接合材料9、13而进行接合，从而确保牢固的接合强度。对这一点进行说明。
通常，从半导体元件的表面向例如外部的电极等的电连接是使用铝等金属导线作为配线部件而进行的，金属导线通过导线键合而固相接合于半导体元件的表面。在半导体装置之中，功率半导体装置对大电流进行通断控制，流过大电流作为工作电流。因此，在功率半导体装置处，并联地连接有多条金属导线。而且，作为该金属导线，使用线径约为500μm左右的较粗的金属导线。
然而，利用这种方法，无论在电气容量方面，还是在接合部分的寿命方面都会存在极限。随着功率半导体装置的小型化的发展，半导体元件的尺寸也变小。因此，难以使并联连接的金属导线的根数增加。另外，如果使金属导线的线径变粗，则在将金属导线接合于半导体元件的表面时，需要增强对金属导线加压而使其进行振动的力。此时，如果该力变得过强，则有可能破坏半导体元件(半导体芯片)。
并且，就功率半导体装置而言，伴随功率半导体装置的动作，会发生配线热循环和功率循环。因此，功率半导体装置需要耐受该严酷的环境。另外，功率半导体装置的标准输出具有增大倾向，要求例如几百伏特的输出，甚至几千伏特的输出。因此，要求配线的接合部能够流过大电流、电阻变低。并且，要求在严酷的环境下也实现接合部分的可靠性的提高和长寿命化。
就上述的功率半导体装置而言，半导体元件11与金属板5通过接合材料9而接合。半导体元件11与配线部件15a等通过接合材料13而接合。关于该接合材料9、13，通过将包含规定的金属颗粒的膏状接合材料进行低温烧结，由此形成金属间化合物。即，形成锡(Sn)与从铜(Cu)、镍(Ni)以及银(Ag)中选择的至少任意金属的金属间化合物。更具体地说，有(Sn+Cu)、(Sn+Ni)、(Sn+Ag)、(Sn+Cu+Ni)、(Sn+Cu+Ag)、(Sn+Ni+Ag)、(Sn+Cu+Ni+Ag)这7种金属间化合物。
由此，能够提高半导体元件11与金属板5的接合强度，并且能够提高半导体元件11与配线部件15a等的接合强度。特别是就半导体元件11与配线部件15a而言，填充于在配线部件15a形成的通孔16a、16b的接合材料13b与接合材料13a连接。由此，能够将半导体元件11与配线部件15a等更牢固地进行接合。
另外，在将膏状的接合材料进行低温烧结(约200℃～300℃左右)之后，形成金属间化合物，从而接合材料9、13的耐热温度成为约500℃～900℃左右。由此，在温度高的环境下使用功率半导体装置的情况下，也能够充分地确保接合材料9、13的接合强度。
并且，配线部件15a等是由铜或者铜合金形成的，从而能够将电阻率抑制为较低的值。并且，在半导体元件11产生的热不仅能够从散热板3进行散热，而且还能从配线部件15a等进行散热。
实施方式2
对实施方式2涉及的功率半导体装置进行说明。如图10及图11所示，在功率半导体装置1处，隔开距离地配置有至少2个散热板3a、3b。散热板3a及散热板3b各自由金属板5a、绝缘基板19以及金属板5b构成。在金属板5a与金属板5b之间夹着绝缘基板19。
绝缘基板19是由例如环氧树脂、氮化硅、氮化铝或者氧化铝等形成的。另外，绝缘基板19的厚度约为0.2mm～3mm左右的固定的厚度。除此以外的结构与图1及图2所示的功率半导体装置相同，因此对相同部件标注相同标号，除必要的情况以外，不重复详细的说明。
在散热板3a搭载有包含二极管11b的半导体元件11。二极管11b的阴极电极(未图示)通过接合材料9而与金属板5a接合。配线部件15a通过接合材料13而与二极管11b的阳极电极(未图示)接合。接合材料13由接合材料13a和接合材料13b构成。接合材料13a介于二极管11b与配线部件15a之间。接合材料13b填充于在配线部件15a形成的通孔16b。接合材料13b到达接合材料13a，与接合材料13a连接。
另外，半导体元件11的电极(未图示)通过接合材料(未图示)而与金属板5a接合。配线部件15a通过接合材料13而与半导体元件11的电极(未图示)接合。
在散热板3b搭载有包含二极管11c的半导体元件11。二极管11c的阴极电极(未图示)通过接合材料9而与金属板5a接合。配线部件15d的一端侧通过接合材料13而与二极管11c的阳极电极(未图示)接合。接合材料13由接合材料13a和接合材料13b构成。接合材料13a介于二极管11c与配线部件15d之间。接合材料13b填充于在配线部件15d形成的通孔16d。接合材料13b到达接合材料13a，与接合材料13a连接。
配线部件15d的另一端侧通过接合材料9而与散热板3a的金属板5a接合。接合材料9由接合材料9a和接合材料9b构成。接合材料9a介于金属板5a与配线部件15d之间。接合材料9b填充于在配线部件15d形成的通孔16c。接合材料9b到达接合材料9a，与接合材料9a连接。二极管11b与二极管11c等经由接合材料9、配线部件15d以及接合材料13而电连接。
下面，对上述的功率半导体装置1的制造方法的一个例子进行说明。首先，准备散热板3a及散热板3b(参照图12)。接下来，如图12所示，将散热板3a及散热板3b载置于定位工具25。利用定位工具25保持散热板3a与散热板3b的间隔。
接下来，如图13所示，通过例如丝网印刷法等，在散热板3a及散热板3b各自的金属板5a的搭载半导体元件的区域涂敷接合材料9。接下来，如图14所示，在膏状的接合材料9之上载置半导体元件11(二极管11b、11c等)。
接下来，如图15所示，通过例如丝网印刷法等，在半导体元件11的与配线部件进行接合的区域涂敷接合材料13(13a)。接下来，准备配线部件15a及配线部件15d等。在配线部件15a形成有通孔16b。在配线部件15d形成有通孔16c及通孔16d。接下来，将配线部件15a及配线部件15d等载置于接合材料13之上，利用固定工具(未图示)进行保持。
接下来，如图16所示，在配线部件15a的通孔16b填充接合材料13(13b)，并且在配线部件15d的通孔16c、16d填充接合材料13。接下来，例如在温度约为200℃～300℃的条件下，实施热处理(低温烧结)(液相扩散接合)。通过实施热处理，由所含有的金属颗粒形成金属间化合物。热处理后的接合材料9、13的耐热温度约为500℃～900℃。
接下来，如图17所示，将接合了半导体元件11及配线部件15a等的散热板3a、3b配置于下模具21的腔室内。接下来，配置上模具23，利用下模具21和上模具23夹着上述的散热板3a、3b。接下来，在下模具21及上模具23的腔室内注入树脂(未图示)。散热板3a、3b、半导体元件11以及配线部件15a、15d等由模塑树脂17(参照图11)进行封装。然后，将下模具21和上模具23卸除，如图11所示，完成由模塑树脂17封装的功率半导体装置1。
就上述的功率半导体装置而言，半导体元件11与金属板5a通过接合材料9而接合。半导体元件11与配线部件15a、15d等通过接合材料13而接合。如上所述，关于接合材料9、13，通过将包含规定的金属颗粒的膏状接合材料进行低温烧结，由此形成锡(Sn)与从铜(Cu)、镍(Ni)以及银(Ag)中选择的至少任意金属的金属间化合物。
由此，能够提高半导体元件11与金属板5a的接合强度以及配线部件15d与金属板5a的接合强度，并且能够提高半导体元件11与配线部件15a、15d等的接合强度。
特别是就配线部件15d与金属板5a而言，填充于在配线部件15d形成的通孔16c的接合材料13b与接合材料13a连接。由此，能够将配线部件15d与金属板5a更牢固地进行接合。
另外，就半导体元件11与配线部件15d而言，填充于在配线部件15d形成的通孔16d的接合材料13b与接合材料13a连接。由此，能够将半导体元件11与配线部件15d更牢固地进行接合。
并且，就半导体元件11与配线部件15a而言，填充于在配线部件15a形成的通孔16b的接合材料13b与接合材料13a连接。由此，能够将半导体元件11与配线部件15a更牢固地进行接合。此外，作为导体部而例举了配线部件15a～15d和金属板5、5a、5b，但除此以外，对于其他与半导体元件进行电连接的导体部，也能够使用接合材料进行接合。
另外，如上所述，通过在接合材料9、13形成金属间化合物，从而接合材料9、13的耐热温度成为约500℃～900℃左右。由此，在温度高的环境下使用功率半导体装置的情况下，也能够充分地确保接合材料9、13的接合强度。此外，作为用于形成金属间化合物的金属，不限于上述的金属。
并且，配线部件15a等是由铜或者铜合金形成的，从而能够将电阻率抑制为较低的值。另外，在半导体元件11产生的热不仅能够从散热板3进行散热，而且还能从配线部件15a等进行散热。也可以在散热板3安装多个鳍片，以更有效地进行散热。
作为半导体元件11而举例说明了IGBT 11a和二极管11b、11c，但也可以包含MOSFET(Metal Oxide Semiconductor Field Effect Transistor)。另外，关于这些半导体元件11，除了硅(Si)或者碳化硅(SiC)之外，还可以由氮化镓(GaN)形成。
此外，在各实施方式中说明的功率半导体装置1能够根据需要而进行各种组合。
本发明有效地利用于电力的控制所使用的功率半导体装置。
虽然对本发明的实施方式进行了说明，但应该认为本次公开的实施方式在所有方面都为例示，而非限制性的内容。本发明的范围通过权利要求书而示出，意在包含与权利要求书均等的含义及范围内的所有变更。

Claims (7)

1.一种功率半导体装置，其具有：
半导体元件，其包含第1功率元件，该第1功率元件具有相对的第1表面及第2表面；
散热板，其包含第1导体板，该第1导体板与所述第1功率元件的所述第1表面接合；
导体部，其包含第1配线部件，该第1配线部件与所述第1功率元件的所述第2表面接合而与所述第1功率元件电连接；
接合材料，其包含第1接合材料及第2接合材料，该第1接合材料将所述第1功率元件的所述第1表面与所述第1导体板进行接合，该第2接合材料将所述第1功率元件的所述第2表面与所述第1配线部件进行接合；以及
封装材料，其将所述半导体元件、所述导体部以及所述散热板进行封装，
所述接合材料包含金属间化合物，
所述第2接合材料具有：
第1部分，其介于所述第1功率元件的所述第2表面与所述第1配线部件之间；以及
第2部分，其贯穿所述第1配线部件而与所述第1部分连接。
2.根据权利要求1所述的功率半导体装置，其中，
所述导体部包含第2配线部件，
所述接合材料包含第3接合材料，该第3接合材料将所述第1导体板与所述第2配线部件进行接合，
所述第3接合材料包含：
第3部分，其介于所述第1导体板与所述第2配线部件之间；以及
第4部分，其贯穿所述第2配线部件而与所述第3部分连接。
3.根据权利要求2所述的功率半导体装置，其中，
所述半导体元件包含第2功率元件，该第2功率元件具有相对的第3表面及第4表面，
所述散热板包含第2导体板，该第2导体板与所述第1导体板隔开距离地，该第2导体板与所述第2功率元件的所述第4表面接合，
所述接合材料包含：
第4接合材料，其将所述第2功率元件的所述第3表面与所述第2导体板进行接合；以及
第5接合材料，其将所述第2功率元件的所述第4表面与所述第2配线部件进行接合，
所述第5接合材料包含：
第5部分，其介于所述第2功率元件的所述第4表面与所述第2配线部件之间；以及
第6部分，其贯穿所述第2配线部件而与所述第5部分连接。
4.根据权利要求1所述的功率半导体装置，其中，
在所述接合材料，作为所述金属间化合物而包含从铜(Cu)、镍(Ni)以及银(Ag)中选择的至少任意金属与锡(Sn)的金属间化合物。
5.根据权利要求1所述的功率半导体装置，其中，
所述半导体元件包含绝缘栅双极晶体管、二极管以及场效应晶体管中的至少任意方。
6.根据权利要求1所述的功率半导体装置，其中，
所述散热板包含绝缘金属层及绝缘基板中的任意方。
7.一种功率半导体装置的制造方法，其具有下述工序：
准备包含第1导体板的散热板的工序；
在所述第1导体板涂敷第1接合材料的工序；
在所述第1接合材料之上载置半导体元件的工序；
在所述半导体元件涂敷第2接合材料第1部分的工序；
准备形成有通孔的第1配线部件的工序；
以在所述通孔露出所述第2接合材料第1部分的方式，将所述第1配线部件载置于所述第2接合材料第1部分之上，对所述第1配线部件进行保持的工序；
以到达所述第2接合材料第1部分的方式，在所述通孔填充涂敷第2接合材料第2部分的工序；
对所述第1接合材料、所述第2接合材料第1部分以及所述第2接合材料第2部分实施热处理的工序；
将所述半导体元件、所述散热板以及所述第1配线部件配置于模具的工序；
通过在所述模具内填充封装材料，将所述半导体元件、所述散热板以及所述第1配线部件进行封装的工序；以及
将由所述封装材料封装的所述半导体元件、所述散热板以及所述第1配线部件从所述模具取出的工序，
在对所述第1接合材料、所述第2接合材料第1部分以及所述第2接合材料第2部分各自进行涂敷的工序中，使用包含锡(Sn)的颗粒和从铜(Cu)、镍(Ni)以及银(Ag)中选择的至少任意金属的颗粒的材料，
在实施所述热处理的工序中，形成所述任意金属与所述锡(Sn)的金属间化合物。
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US20190214326A1 (en) 2019-07-11
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US20170178995A1 (en) 2017-06-22
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