CN117917765A - 半导体装置、电力变换装置及半导体装置的制造方法 - Google Patents

半导体装置、电力变换装置及半导体装置的制造方法 Download PDF

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Publication number
CN117917765A
CN117917765A CN202311334031.6A CN202311334031A CN117917765A CN 117917765 A CN117917765 A CN 117917765A CN 202311334031 A CN202311334031 A CN 202311334031A CN 117917765 A CN117917765 A CN 117917765A
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China
Prior art keywords
layer
conductive metal
metal plate
semiconductor device
semiconductor element
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CN202311334031.6A
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Inventor
日野泰成
山下润一
田中香次
寺岛知秀
出尾晋一
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Publication of CN117917765A publication Critical patent/CN117917765A/zh
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Abstract

本发明涉及半导体装置、电力变换装置及半导体装置的制造方法。对半导体装置的生产成本增高进行抑制，并且实现可靠性的提高及延长寿命。半导体装置(100)具有：半导体元件(41)；上表面电极，其形成于该半导体元件(41)的上表面；以及以铜为主成分的导电性金属板(22)，其接合于半导体元件(41)的上表面电极之上。导电性金属板(22)以铜为主成分，与半导体元件(41)的上表面电极之上进行固相扩散接合。

Description

半导体装置、电力变换装置及半导体装置的制造方法
技术领域
本发明涉及半导体装置、电力变换装置及半导体装置的制造方法。
背景技术
例如，作为电力控制用的半导体装置的构造，已知在半导体元件的上表面电极之上设置由铜(Cu)构成的Cu电极，由Al等金属构成的导线向Cu电极进行键合的构造。在下述专利文献1中公开了通过在半导体元件的上表面电极之上设置Cu电极，从而实现上表面电极的低电阻化、散热性的提高的技术。
专利文献1：日本特开2006-86378号公报
近年来，电力控制用的半导体装置的用途扩大，半导体装置的大电流化不断发展。另外，由于电力控制用的半导体装置在世界各地使用，由此谋求应对恶劣的环境。因此，进一步提高半导体装置的可靠性，延长寿命成为大的课题。
在将金属导线直接键合于半导体元件的上表面电极的构造中，由于导线的剥离(脱落)而产生断线的情况很多，这在提高可靠性及延长寿命方面成为问题。
如专利文献1所示，通过在半导体元件的上表面电极之上设置Cu电极，从而改善该问题。但是，为了形成能够与导线键合相适应的厚度的Cu电极，需要进行长时间的Cu镀敷，因此产生生产率的问题。另外，由于镀敷技术需要非常多的工序(清洗、干燥、抗蚀处理等)，因此还存在设备投资、确保设备设置区域等课题。并且，镀敷技术还存在成膜得到的镀膜厚度不均匀、外观的不均等课题，需要详细地对工序及品质进行管理。这会引起生产成本增高。
发明内容
本发明就是为了解决以上那样的课题而提出的，其目的在于对半导体装置的生产成本增高进行抑制，并且实现可靠性的提高及延长寿命。
本发明涉及的半导体装置具有：半导体元件；上表面电极，其形成于所述半导体元件的上表面；以及导电性金属板，其以铜为主成分，该导电性金属板被固相扩散接合于所述半导体元件的所述上表面电极之上。
发明的效果
根据本发明，与镀敷方法相比，生产率优异，实现生产工艺稳定化并且生产成本也变得廉价，能够在半导体元件的上表面电极形成金属部件。另外，导电性金属板不需要其它金属、镀敷等外装。
附图说明
图1是表示实施方式1涉及的半导体装置的结构的剖视图。
图2是实施方式1涉及的半导体元件的剖视图。
图3是表示实施方式1涉及的半导体元件的上表面的结构例的图。
图4是表示实施方式1涉及的半导体元件的上表面的结构例的图。
图5是表示实施方式1涉及的半导体元件的上表面的结构例的图。
图6是表示实施方式1涉及的半导体装置的制造中的将导电性金属板固相扩散接合于半导体元件的工序的流程图。
图7是表示将导电性金属板固相扩散接合于半导体元件的工序的变形例的流程图。
图8是作为PN结型二极管的半导体元件的剖视图。
图9是作为平面栅型MOSFET的半导体元件的剖视图。
图10是表示将冷却器安装于实施方式1涉及的半导体装置的状态的图。
图11是实施方式2涉及的半导体元件的剖视图。
图12是实施方式3涉及的半导体元件的剖视图。
图13是表示实施方式3涉及的半导体装置的一部分的剖面的图。
图14是表示电力变换系统的结构的框图，该电力变换系统应用了实施方式4涉及的电力变换装置。
具体实施方式
<实施方式1>
图1是表示实施方式1涉及的半导体装置100的结构的剖视图。
半导体装置100具有搭载于绝缘基板43的至少1个半导体元件41。半导体元件41的个数可以为任意数量，与半导体装置100的规格对应地搭载所需数量即可。在本实施方式中，半导体元件41由硅(Si)构成，是对电力进行控制的所谓功率半导体元件。作为功率半导体元件的代表例，例如具有IGBT(Insulated Gate BipolarTransistor)、MOSFET(MetalOxide Semiconductor Field EffectTransistor)、FWD(Free Wheeling Diode)等。半导体元件41的一边为1mm至20mm左右。
半导体元件41的材料并不限于Si，也可以是碳化硅(SiC)或氮化镓(GaN)这样的宽带隙半导体。在使用了宽带隙半导体的情况下，与使用了Si的半导体装置相比，得到高电压、大电流、高温下的动作优异的半导体装置100。
绝缘基板43具有从下方起依次层叠有基座板43c、绝缘层43b及电路图案43a的层叠构造，半导体元件41经由接合材料42搭载于绝缘基板43的电路图案43a。接合材料42是包含Sn的导电性金属，是所谓的焊料。此外，由于半导体元件41发热，因此接合材料42也可以是导热率比焊料大、具有高散热性的烧结材料，例如是使用了Ag或Cu的微粒的烧结材料。
电路图案43a由包含铜(Cu)或铝(Al)中的任意者的导电性金属构成。电路图案43a的厚度与通电时的电流密度、发热温度对应地设定，例如是0.2mm至0.5mm左右。绝缘层43b由添加有导热性优异的填料的环氧树脂构成，该填料由BN、Al2O3等构成。绝缘层43b的厚度为0.2mm至1.0mm左右。基座板43c由包含Cu或Al中的任意者的导热率优异的金属构成。基座板43c的厚度为1mm至5mm左右。谋求绝缘基板43具有大于或等于几十W/(m·K)的导热率，对电路图案43a、绝缘层43b及基座板43c的各材料进行选择，以得到与半导体元件41所需要的散热规格对应的恰当的导热率。
另外，绝缘基板43的电路图案43a及绝缘层43b也可以是所谓的DBC(Directbonded copper)基板。即，也可以是如下构造，即，绝缘层43b由Al2O3、AlN或Si3N4等陶瓷构成，电路图案43a与绝缘层43b被一体化，在绝缘层43b的下表面设置有金属板(未图示)。在该情况下，绝缘层43b的下表面的金属板与基座板43c之间通过焊料等接合材料进行接合。
容纳半导体元件41的壳体44通过粘接剂45粘接、固定于绝缘基板43的绝缘层43b的周缘部。作为壳体44的材料，存在PPS(Poly Phenylene Sulfide)树脂、PBT(PolyButylene Terephthalate)树脂等。
壳体44具有电极端子46。电极端子46与壳体44一起进行了嵌入成型，被埋入于壳体44内。如图1所示，电极端子46弯曲，电极端子46的一个端部为了与外部进行连接而从壳体44凸出。电极端子46的另一个端部在壳体44的内侧露出。
在壳体44内，半导体元件41、电路图案43a及电极端子46通过金属导线47电连接。如图1所示，金属导线47包含将电极端子46和电路图案43a连接的金属导线47a、将半导体元件41和电路图案43a连接的金属导线47b。金属导线47由包含Al或Cu的材料构成。金属导线47的直径为0.1mm至0.5mm左右。金属导线47并不限于通常的线状(金属丝状)，也可以是能够应对大电流的板状的带状导线。
在壳体44的内侧，即由壳体44和绝缘基板43规定的空间中填充有封装树脂48，通过封装树脂48对半导体元件41及金属导线47进行封装。封装树脂48是凝胶状的硅酮树脂，或是具有热固性且添加有包含SiO2的填料的环氧树脂等。封装树脂48的材料并不限于此，只要是具有所需的弹性模量、导热率、耐热性、绝缘性及粘接性的树脂即可，例如，也可以使用酚醛树脂、聚酰亚胺树脂等。
粘接剂45为硅酮类粘接剂。或者，粘接剂45也可以为与封装树脂48相同的材料。通过利用粘接剂45将绝缘层43b和壳体44粘接，从而能够防止封装树脂48从壳体44泄露。
图2是半导体元件41的剖视图。这里，半导体元件41为IGBT。半导体元件41具有形成IGBT单元的单元区域、设置于单元区域的外侧的末端区域，图2示出单元区域与末端区域的边界部分的剖面。另外，下面，将第1导电型设为N型，将第2导电型设为P型而进行说明，但也可以与其相反地，将第1导电型设为P型，将第2导电型设为N型。
半导体元件41是使用具有第1主面31及第2主面32的半导体基板30形成的。在半导体基板30，在第1主面31和第2主面32之间形成有第1导电型的漂移层1。半导体基板30的材料可以是通常的硅(Si)，也可以是例如碳化硅(SiC)等宽带隙半导体。
在单元区域，在漂移层1的第1主面31侧形成有杂质的峰值浓度比漂移层1高的第1导电型的载流子积蓄层2，并且，在半导体基板30的第1主面31侧的表层部形成有第2导电型的基极层3。在基极层3的表层部选择性地形成有第1导电型的发射极层5、杂质的峰值浓度比基极层3高的第2导电型的接触层6。
在半导体基板30的第1主面31形成有发射极层5、将基极层3及载流子积蓄层2贯穿而达到漂移层1的有源沟槽10、将没有发射极层5的区域的基极层3及载流子积蓄层2贯穿而到达漂移层1的哑沟槽13。哑沟槽13配置为将有源沟槽10包围。在有源沟槽10及哑沟槽13的每一者中，隔着栅极绝缘膜11埋入了栅极电极12。哑沟槽13内的栅极电极12为无助于IGBT的接通、断开的切换的哑电极。
在半导体基板的第1主面31之上形成有将有源沟槽10及哑沟槽13覆盖的层间绝缘膜4。另外，在层间绝缘膜4之上形成阻挡金属23，在其之上形成有例如由铝(Al)、或AlSi等金属构成的金属电极即发射极电极14。发射极电极14穿过形成于层间绝缘膜4的接触孔，经由阻挡金属23与发射极层5及接触层6连接。
阻挡金属23为Ti层或W层。阻挡金属23的厚度为10nm至300nm左右。另外，阻挡金属23也可以是由Ti层及W层构成的两层构造，或由TiW构成。并且，也可以是Ta、TaN、TiN。
在漂移层1的第2主面32侧形成有杂质的峰值浓度比漂移层1高的第1导电型的缓冲层7。而且，在半导体基板30的第2主面32侧的表层部形成有第2导电型的集电极层8。在半导体基板的第2主面32之上形成有与集电极层8连接的集电极(collector)电极(electrode)9。这些缓冲层7、集电极层8及集电极电极9不仅形成于单元区域，也形成于末端区域。
另一方面，在末端区域，在半导体基板30的第1主面31侧的表层部形成有：第2导电型的阱层15，其形成得比有源沟槽10及哑沟槽13深；以及第2导电型的RESURF层16，其与阱层15相比配置于外侧。另外，在半导体基板30的第1主面31之上，以将阱层15及RESURF层16覆盖的方式形成有场氧化膜17。在场氧化膜17之上形成有配置于阱层15的上方的栅极配线18。
栅极配线18被从单元区域延伸出的层间绝缘膜4覆盖，在将栅极配线18覆盖的层间绝缘膜4之上隔着阻挡金属23形成有栅极流道(gate runner)19。栅极流道19穿过形成于层间绝缘膜4的接触孔，经由阻挡金属23与栅极配线18连接。
以将金属电极即发射极电极14的一部分和栅极流道19覆盖的方式形成有由有机树脂之外的材料构成的第1钝化膜20。另外，在第1钝化膜20之上，以隔着第1钝化膜20将发射极电极14的一部分覆盖的方式形成有由有机树脂构成的第2钝化膜21。第1钝化膜20由铜难以扩散的材料构成。在本实施方式中，将硅氮化膜(SiN)用作第1钝化膜20的材料。第1钝化膜20的材料并不限于此，例如，也可以是包含氮(N)的半绝缘膜、包含硅(Si)的氧化膜等。
在发射极电极14之上形成有由镍(Ni)构成的Ni层24。Ni层24与发射极电极14的没有被第1钝化膜20覆盖的部分连接，Ni层24的端部搭至第1钝化膜20。但是，第2钝化膜21与Ni层24分离。并且，在Ni层24的上方设置有由金(Au)构成的Au层25。在本实施方式中，通过由发射极电极14、Ni层24及Au层25构成的层叠构造构成半导体元件41的上表面电极。即，本实施方式的上表面电极包含从上表面侧(与后述的导电性金属板22进行接合的面侧)起依次排列Au层25、Ni层24、Al层或AlSi层即发射极电极14的层叠构造。
Ni层24的厚度(图2的纸面上的纵向的尺寸)为2μm至15μm左右。Au层25的厚度为30nm至70nm左右。发射极电极14的厚度为3μm至10μm左右。Ni层24及Au层25例如通过化学气相生长(CVD)、溅射这样的物理气相生长(PVD)、或镀敷而形成。
在图2中示出了在半导体元件41的单元区域与末端区域的边界部分设置有第1钝化膜20及第2钝化膜21的例子，但第1钝化膜20及第2钝化膜21例如也可以设置于单元区域内的多个IGBT单元之间等。
导电性金属板22被固相扩散接合于上表面电极的最上层即Au层25之上。导电性金属板22为平板形状，由铜板、铜合金、铜的复合材料(CIC构造：Copper(铜)/Invar(因瓦)/Copper(铜))等Cu或以Cu为主成分的导电性金属构成。导电性金属板22的厚度为0.01mm至1.0mm左右的厚度。导电性金属板22的表面(外装)为铜或铜合金，未实施镀敷处理等，在导电性金属板22的表面不存在铜或铜合金之外的金属。但是，导电性金属板22的表面也可以被通过防锈处理形成的防锈材料覆盖。
金属导线47b被导线键合于导电性金属板22的上表面。从高可靠性、高寿命的观点出发，优选金属导线47b为与导电性金属板22相同的材料。
导电性金属板22的平面尺寸(面积)比上表面电极的尺寸小。这里，将导电性金属板22的平面尺寸设得比上表面电极的最上层(与导电性金属板22接合的层)即Au层25的平面尺寸小。即，导电性金属板22设置为未伸出到上表面电极的外侧。原因在于，在将导电性金属板22固相扩散接合于Au层25时，容易进行导电性金属板22相对于Au层25的定位，并且，防止导电性金属板22与半导体元件41之上的其它电极接触(导通)。
图3示出半导体元件41的上表面的结构例。图3所示的半导体元件41具有两个作为上表面电极的Au层25，以导电性金属板22与两个Au层25各自重叠的方式连接。通过使超声波工具(未图示)与配置于Au层25之上的导电性金属板22的上表面接触，一边施加载荷一边施加超声波振动，从而在导电性金属板22和Au层25之间产生摩擦，由此形成Au层25与导电性金属板22的固相扩散接合。在图3中示出通过使用尺寸(面积)比导电性金属板22大的超声波工具的尺寸，使导电性金属板22和Au层25的接触面的整体成为接合部33的例子。
导电性金属板22的上表面从超声波工具受到载荷及超声波振动，被施加使得超声波工具的痕迹残留下来程度的超声波能量。因此，导电性金属板22及Au层25的各原子扩散，在导电性金属板22与Au层25的接合部33处得到充分的接合强度，得到可靠性高的接合部33。此外，也可以通过相同的方法进行金属导线47的键合。
导电性金属板22与Au层25的接合部33的尺寸根据超声波工具的尺寸而变化。图4示出半导体元件41具有1个作为上表面电极的Au层25，导电性金属板22接合于Au层25的例子。在图4中，导电性金属板22与Au层25的接合部33比导电性金属板22的尺寸小，位于导电性金属板22的中央部。原因在于，使尺寸比导电性金属板22的尺寸小的超声波工具与导电性金属板22的中央部接触而进行了导电性金属板22与Au层25的固相扩散接合。
另外，图5示出半导体元件41具有两个作为上表面电极的Au层25，导电性金属板22接合于两个Au层25的每一者的例子。在图5中，导电性金属板22与Au层25的接合部33处于导电性金属板22的中央部及4角这5处。原因在于，在导电性金属板22的中央部及4角这5处进行了使用尺寸比导电性金属板22的尺寸小的超声波工具的导电性金属板22与Au层25的固相扩散接合。
由超声波工具实现的超声波振动的振动方向是相对于导电性金属板22和Au层25的接触面的水平方向，超声波工具能够施加图3、图4及图5的纸面上的横向(X方向)或纵向(Y方向)的超声波振动。超声波工具能够向1个方向或2个方向施加超声波振动，因此也能够如激光接合照射的轨迹那样，通过组合X方向和Y方向，从而以矩形、圆形的方式赋予超声波能量。或者，也可以一边使保持有半导体元件41、或接合了半导体元件41的绝缘基板43的工作台旋转，一边从超声波工具施加1个方向或2个方向的超声波能量。这样，通过将各种各样的振动方向的超声波振动组合起来，从而抑制了由超声波振动引起的对半导体元件41的损伤，并且导电性金属板22和半导体元件41之上的电极即Au层25的各原子变得容易扩散，在导电性金属板22与Au层25的接合部33处得到更高的接合强度。
如上所述，根据实施方式1涉及的半导体装置100，不对半导体元件41的上表面电极实施Cu镀敷而是使导电性金属板22固相扩散接合，因此能够对生产成本的增高进行抑制。另外，由于是针对导电性金属板22进行金属导线47的键合，因此与直接将金属导线键合于上表面电极的情况相比，难以由于导线的剥离(脱落)而产生断线，能够有助于可靠性的提高及延长寿命。另外，由于导电性金属板22为容易实施厚度管理的板状的部件，因此不会如Cu镀敷那样厚度变得不均匀，产生外观上的不均。
接下来，一边参照图6的流程图，一边对实施方式1涉及的半导体装置100的制造方法，特别是将导电性金属板22固相扩散接合于半导体元件41的工序进行说明。
首先，将超声波工具安装于超声波接合装置，准备将半导体元件41接合于绝缘基板43而形成的半成品、导电性金属板22(步骤S101)。此时，就导电性金属板22而言，准备与半导体元件41的上表面电极的数量对应的张数。
通过吸附或按压夹具将搭载有半导体元件41的绝缘基板43固定于超声波接合装置的工作台，在半导体元件41的上表面电极之上载置导电性金属板22。然后，使超声波工具向导电性金属板22的垂直方向(Z方向)下降，将超声波工具推压至导电性金属板22而赋予载荷，对半导体元件41的上表面电极和导电性金属板22进行固定、保持(步骤S102)。如果超声波接合装置具有照相机及图像识别功能，能够使用这些功能对超声波工具或工作台的动作进行监视而进行自动控制，则也可以自动地进行步骤S102。
之后，使用超声波工具，一边对导电性金属板22赋予载荷，一边施加超声波振动，由此使半导体元件41的上表面电极和导电性金属板22进行固相扩散接合(步骤S103)。也可以一边对导电性金属板22进行加热，一边进行步骤S103。在该情况下，对导电性金属板22赋予的接合能量增加，能够进一步得到牢固的接合部33。但是，由于加热成为促进氧化的原因，因此在一边对导电性金属板22进行加热，一边实施步骤S103的情况下，优选一边喷出氮等惰性气体一边实施，或在惰性气体的环境中实施。
如图3或图5所示，在进行固相扩散接合的部位有多处的情况下，步骤S103重复多次。
在固相扩散接合完成后，使超声波工具上升而与导电性金属板22分离，通过吹气而将飞散于绝缘基板43、半导体元件41及导电性金属板22之上的金属碎屑除去(步骤S104)。金属碎屑是在一边利用超声波工具对导电性金属板22赋予载荷一边进行超声波振动时产生的微小金属碎屑，例如，如果导电性金属板22为Cu，则产生微小的Cu碎屑。
也可以以阶跃波形那样的两个阶段对导电性金属板22施加载荷和超声波振动。例如，也可以在固相扩散接合工序的前半以小的载荷赋予超声波振动，在后半以大的载荷赋予超声波振动。
在吹气完成后，通过视觉辨识进行外观检查，该外观检查是对半导体元件41是否具有龟裂，是否残留有金属碎屑进行确认(步骤S105)。如果超声波接合装置是具有照相机及图像识别功能，能够使用这些功能进行外观检查的装置，则也可以自动地进行步骤S105。另外，也可以使用与超声波接合装置分体的自动外观检查装置。
图7示出将导电性金属板22固相扩散接合于半导体元件41的工序的变形例的流程图。在图6的流程中，在步骤S101中准备与绝缘基板43接合的半导体元件41即半成品，在图7的流程中，在步骤S101中，准备与绝缘基板43接合前的半导体元件41。另外，在图7的流程中，针对与绝缘基板43接合前的半导体元件41还实施步骤S102至S105的各工序。除此之外与图6的流程相同。
在向绝缘基板43之上搭载多个半导体元件41的情况下，在图6的流程中，如果在固相扩散接合工序(步骤S103)中任意半导体元件41受到损伤而成为不合格品，则不将绝缘基板43之上的多个半导体元件41全部流转至下一个工序。在图7的流程中，由于针对各个半导体元件41实施固相扩散接合工序(步骤S103)，因此只要将成为不合格品的半导体元件41排除在外即可，因此存在成品率提高这样的优点。该优点在半导体元件41的材料为昂贵的SiC的情况下特别有效。
此外，虽然省略了流程图，但在图6或图7的流程完成后，将金属导线47b导线键合于导电性金属板22，通过粘接剂45将壳体44粘接固定于绝缘基板43之上，对金属导线47a进行导线键合而完成内部配线，将封装树脂48填充于壳体44内而进行封装。金属导线47a的导线键合与金属导线47b的导线键合也可以在将壳体44粘接固定于绝缘基板43后同时进行。
在本实施方式中，由于接合材料、镀层未介于半导体元件41的上表面电极与导电性金属板22之间，因此导电性金属板22是相对于半导体元件41的上表面电极平行配置的。这样容易进行金属导线47b的键合，由此，得到抑制对半导体元件造成的损伤、抑制导线脱落等效果。
在图2中，作为半导体元件41的例子示出沟槽栅型的IGBT，但如上所述，半导体元件41并不限于IGBT，例如也可以是MOSFET、FWD等。图8示出用作FWD的PN结型二极管即半导体元件41的结构例。另外，图9示出平面栅型的MOSFET即半导体元件41的结构例。在图8及图9中，对与图2所示的要素对应的要素标注与其相同的标号。此外，图8及图9示出单元区域的剖面。
如图8所示，在半导体元件41为PN结型二极管的情况下，在半导体基板30的第1主面31侧的表层部形成第2导电型的阳极层52，在第1主面31之上形成与阳极层52连接的阳极电极51。另外，在半导体基板30的第2主面32侧的表层部形成第1导电型的阴极层54，在第2主面32之上形成与阴极层54连接的阴极电极53。Ni层24及Au层25设置于阳极电极51之上。即，在图8的结构中，由阳极电极51、Ni层24及Au层25构成上表面电极。导电性金属板22被固相扩散接合于上层电极的最上层即Au层25。
如图9所示，在半导体元件41为平面栅型的MOSFET的情况下，在半导体基板30的第1主面31侧的表层部选择性地形成第2导电型的阱层15，在阱层15的表层部选择性地形成第1导电型的源极层56。另外，栅极绝缘膜11及栅极电极12形成于半导体基板30的第1主面31之上，与半导体基板30的表层部的源极层56和漂移层1之间的阱层15相对地设置。栅极电极12被层间绝缘膜4覆盖，在层间绝缘膜4之上形成阻挡金属23及源极电极55。源极电极55穿过形成于层间绝缘膜4的接触孔，经由阻挡金属23与源极层56及阱层15连接。另外，在半导体基板30的第2主面32侧的表层部形成第1导电型的漏极层57，在第2主面32之上形成与漏极层57连接的漏极电极58。Ni层24及Au层25设置于源极电极55之上。即，在图9的结构中，由源极电极55、Ni层24及Au层25构成上表面电极。导电性金属板22被固相扩散接合于上层电极的最上层即Au层25。
图2、图8及图9所示的结构各自只不过是半导体元件41的结构的一个例子，半导体元件41的结构并不限于此。例如，半导体元件41也可以是将IGBT和FWD集成于1个半导体芯片的RC-IGBT(Reverse Conducting IGBT)。就RC-IGBT而言，能够缩小半导体元件41的安装面积，因此能够有助于半导体装置100的小型化。另外，对于RC-IGBT，由于能够削减制造工序数量(例如，能够削减将导电性金属板22固相扩散接合于半导体元件41的上表面电极的工序数量)，因此还存在能够使生产率、生产节拍大幅改善这样的优点。
在图1中，作为半导体装置100的封装件的结构，示出将半导体元件41容纳于壳体44，但例如，半导体装置100的封装件的结构也可以是通过热固性封装树脂对半导体元件41进行了模塑的结构(所谓传递模塑型的封装件)。
根据半导体装置100的使用条件，还想到半导体元件41的动作温度超过额定值，半导体元件41的通断性能降低，在最差的情况下，热失控而产生破损。因此，为了防止半导体元件41的动作温度超过额定值，优选使用导热性优异的绝缘基板43，进一步如图10所示，也可以经由散热材料49，将具有多个鳍片的冷却器50安装于绝缘基板43的下表面(即基座板43c的下表面)。散热材料49例如是接合材料、散热脂、或TIM(Thermal InterfaceMaterial)等。冷却器50的材料是包含铝(Al)或铜(Cu)的导热率优异的金属，冷却器50的冷却方法可以是空冷式，也可以是水冷式。
也可以将绝缘基板43和冷却器50一体化。在该情况下，能够省略散热材料49，降低绝缘基板43与冷却器50之间的热阻，因此会进一步提高半导体元件41的冷却性能。
<实施方式2>
图11是在实施方式2涉及的半导体装置100搭载的半导体元件41的剖视图。在图11中，对与图2所示的要素对应的要素标注与其相同的标号，因此这里省略它们的说明，主要对与图2的不同点进行说明。
图11的结构相对于图2的结构省略了Ni层24及Au层25。在图11中，发射极电极14为半导体元件41的上表面电极，导电性金属板22与发射极电极14进行固相扩散接合。
在图11的结构中，在使导电性金属板22固相扩散接合于发射极电极14时，为了不对半导体元件41造成损伤，优选发射极电极14的厚度大，例如优选为几百nm左右。反之，图11的结构是适于能够将使导电性金属板22固相扩散接合于发射极电极14时的能量减小至不会对半导体元件41造成损伤的程度的情况的构造。
根据实施方式2，通过省略Ni层24及Au层25，从而能够削减半导体装置100的制造工序数量，并且还会对材料的数量及制造成本进行抑制。
此外，实施方式2涉及的半导体装置100的整体构造、制造方法基本上可以与实施方式1相同。
<实施方式3>
图12是在实施方式3涉及的半导体装置100搭载的半导体元件41的剖视图。另外，图13是将实施方式3涉及的半导体装置100中的半导体元件41附近放大后的剖视图。在图12及图13中，对与图1或图2所示的要素对应的要素标注与其相同的标号，因此这里省略它们的说明，主要对与图1及图2的不同点进行说明。
在实施方式3中，与实施方式1的区别在于，省略了将半导体元件41的上表面电极和电极端子46连接的金属导线47b，如图13所示，将电极端子46直接接合于半导体元件41的上表面电极。另外，如图12所示，电极端子46兼作导电性金属板22，与半导体元件41的上表面电极的最上层即Au层25进行固相扩散接合。因此，电极端子46与实施方式1的导电性金属板22相同地，由铜板、铜合金、铜的复合材料(CIC构造)等Cu或以Cu为主成分的导电性金属构成。此外，就图1所示的电极端子46而言，电极端子46的一个端部从壳体44凸出，但图12及图13所示的电极端子46可以是未从壳体44凸出、构成内部配线的电极端子，也可以是与壳体44独立的电极端子(未插入于壳体44的电极端子)。
如图13所示，电极端子46以形成与半导体元件41的接合面的方式弯曲。在图13的例子中，电极端子46为L字状，L字状的下表面与半导体元件41的上表面电极的最上层即Au层25进行固相扩散接合。另外，电极端子46也可以具有弯曲形状，在该情况下，能够实现在半导体装置100的使用环境下产生的应力的缓和。电极端子46的厚度是与半导体装置100的规格、通电电流对应地设定的，例如为0.4mm至1.5mm左右。
此外，实施方式3涉及的半导体装置100的整体构造、制造方法基本上可以与实施方式1相同。
<实施方式4>
实施方式4是将上述实施方式1～3涉及的半导体装置100应用于电力变换装置。本实施方式并不限于特定的电力变换装置，但下面，作为实施方式4，对应用于三相逆变器的情况进行说明。
图14是表示电力变换系统的结构的框图，该电力变换系统应用了本实施方式涉及的电力变换装置。图14所示的电力变换系统由电源210、电力变换装置220、以及负载230构成。电源210为直流电源，将直流电供给至电力变换装置220。电源210可以由各种电源构成，例如，能够由直流系统、太阳能电池、蓄电池构成，也可以由与交流系统连接的整流电路、AC/DC转换器构成。另外，也可以由将从直流系统输出的直流电力变换为规定的电力的DC/DC转换器构成电源210。
电力变换装置220为连接于电源210和负载230之间的三相逆变器，将从电源210供给、输入的直流电力变换为交流电力，将交流电力供给至负载230。如图14所示，电力变换装置220具有：主变换电路221，其将直流电力变换为交流电力而输出；驱动电路222，其输出对主变换电路221的各开关元件进行驱动的驱动信号；以及控制电路223，其将对驱动电路222进行控制的控制信号输出至驱动电路222。
负载230为由从电力变换装置220供给的交流电力驱动的三相电动机。此外，负载230并不限于特定的用途，其为搭载于各种电气设备的电动机，例如，用作面向混合动力汽车、电动汽车、铁路车辆、电梯、或空调设备的电动机。
以下，对电力变换装置220的详情进行说明。主变换电路221具有开关元件和续流二极管(未图示)，通过开关元件的通断，从而将从电源210供给来的直流电力变换为交流电力而供给至负载230。主变换电路221的具体的电路结构是多种多样的，但本实施方式涉及的主变换电路221为2电平的三相全桥电路，其能够由6个开关元件和分别与开关元件反并联的6个续流二极管构成。将上述实施方式1～3中的任意者涉及的半导体装置100应用于主变换电路221的各开关元件。此外，这里对由实施方式1涉及的半导体装置100构成的情况进行说明。6个开关元件两个两个地串联连接而构成上下桥臂，各上下桥臂构成全桥电路的各相(U相、V相、W相)。而且，各上下桥臂的输出端子，即主变换电路221的3个输出端子与负载230连接。
驱动电路222生成对主变换电路221的开关元件进行驱动的驱动信号，供给至主变换电路221的开关元件的控制电极。具体而言，按照来自后述的控制电路223的控制信号，将使开关元件成为接通状态的驱动信号、以及使开关元件成为断开状态的驱动信号输出至各开关元件的控制电极。在将开关元件维持为接通状态的情况下，驱动信号为大于或等于开关元件的阈值电压的电压信号(接通信号)，在将开关元件维持为断开状态的情况下，驱动信号为小于或等于开关元件的阈值电压的电压信号(断开信号)。
控制电路223对主变换电路221的开关元件进行控制以将所期望的电力供给至负载230。具体而言，基于应该供给至负载230的电力对主变换电路221的各开关元件应该成为接通状态的时间(接通时间)进行计算。例如，能够通过与应该输出的电压对应地对开关元件的接通时间进行调制的PWM控制而对主变换电路221进行控制。而且，将控制指令(控制信号)输出至驱动电路222，以使得在各时刻将接通信号输出至应该成为接通状态的开关元件，将断开信号输出至应该成为断开状态的开关元件。驱动电路222按照该控制信号，将接通信号或断开信号作为驱动信号输出至各开关元件的控制电极。
在本实施方式涉及的电力变换装置220中，由于将实施方式1涉及的电力半导体装置用作主变换电路221的开关元件，因此能够实现可靠性的提高。
在本实施方式中，对2电平的电力变换装置220进行了说明，但本实施方式并不限于此，能够应用于各种电力变换装置220。在本实施方式中，设为2电平的电力变换装置220，但也可以是3电平或多电平的电力变换装置220，在将电力供给至单相负载230的情况下也可以将实施方式1～3应用于单相逆变器。另外，在对直流负载230等供给电力的情况下，也可以将实施方式1～3应用于DC/DC转换器、AC/DC转换器。
另外，应用了实施方式1～3的电力变换装置220并不限于上述负载230为电动机的情况，例如，也能够用作放电加工机、激光加工机、或感应加热烹调器、非接触器供电系统的电源装置，而且也能够用作太阳能发电系统、蓄电系统等的功率调节器。
此外，可以将各实施方式自由地组合，对各实施方式适当进行变形、省略。
<附记>
下面，将本发明的诸方案概括为附记。
(附记1)
一种半导体装置，其具有：
半导体元件；
上表面电极，其形成于所述半导体元件的上表面；以及
导电性金属板，其以铜为主成分，该导电性金属板被固相扩散接合于所述半导体元件的所述上表面电极之上。
(附记2)
根据附记1所述的半导体装置，其中，
所述上表面电极包含从与所述导电性金属板进行固相扩散接合的面侧起依次排列Au层、Ni层、Al层或AlSi层的层叠构造。
(附记3)
根据附记2所述的半导体装置，其中，
所述上表面电极形成于层间绝缘膜之上，
在所述上表面电极的所述Al层或所述AlSi层与层间绝缘膜之间，具有包含Ti或W的阻挡金属。
(附记4)
根据附记3所述的半导体装置，其中，
所述Au层的厚度大于或等于30nm且小于或等于70nm，所述Ni层的厚度大于或等于2μm且小于或等于15μm，所述Al层或所述AlSi层的厚度大于或等于3μm且小于或等于10μm，所述阻挡金属的厚度大于或等于10nm且小于或等于300nm。
(附记5)
根据附记1所述的半导体装置，其中，
所述上表面电极在所述导电性金属板的进行固相扩散接合的面具有Al层或AlSi层。
(附记6)
根据附记5所述的半导体装置，其中，
所述上表面电极形成于层间绝缘膜之上，
在所述上表面电极的所述Al层或所述AlSi层与层间绝缘膜之间，具有包含Ti或W的阻挡金属。
(附记7)
根据附记1至6中任一项所述的半导体装置，其中，
所述导电性金属板的平面尺寸比所述上表面电极的平面尺寸小，所述导电性金属板设置为未相对于所述上表面电极伸出。
(附记8)
根据附记1至7中任一项所述的半导体装置，其中，
所述导电性金属板的厚度大于或等于0.01mm且小于或等于1.0mm。
(附记9)
根据附记1至8中任一项所述的半导体装置，其中，
在所述半导体元件的上表面形成有多个所述上表面电极，所述上表面电极设置于多个所述导电性金属板的每一者。
(附记10)
根据附记1至9中任一项所述的半导体装置，其中，
所述导电性金属板在多处与所述半导体元件的所述上表面电极进行了固相扩散接合。
(附记11)
根据附记1至10中任一项所述的半导体装置，其中，
与所述导电性金属板相同材料的金属导线被固相扩散接合于所述导电性金属板。
(附记12)
根据附记1至10中任一项所述的半导体装置，其中，
所述导电性金属板是具有L字状的端部的电极端子，所述L字状的端部的下表面被固相扩散接合于所述上表面电极。
(附记13)
根据附记1至12中任一项所述的半导体装置，其中，
所述半导体元件为RC-IGBT。
(附记14)
根据附记1至13中任一项所述的半导体装置，其中，
所述半导体元件由宽带隙半导体形成。
(附记15)
一种电力变换装置，其具有：
主变换电路，其具有附记1至附记14中任一项所述的半导体装置，该主变换电路对输入进来的电力进行变换而输出；
驱动电路，其将对所述半导体装置进行驱动的驱动信号输出至所述半导体装置；以及
控制电路，其将对所述驱动电路进行控制的控制信号输出至所述驱动电路。
(附记16)
一种半导体装置的制造方法，其具有如下工序：
准备超声波工具、半导体元件及导电性金属板；
在工作台设置所述半导体元件，在所述半导体元件的上表面电极之上载置所述导电性金属板，使用所述超声波工具将所述导电性金属板固定、保持于所述上表面电极；
通过从所述超声波工具对所述导电性金属板赋予载荷及超声波振动，从而使所述导电性金属板固相扩散接合于所述上表面电极；
对接合有所述导电性金属板的所述半导体元件进行吹气；以及
进行所述吹气后的所述半导体元件的外观检查。
(附记17)
根据附记16所述的半导体装置的制造方法，其中，
在准备所述半导体元件的工序中，准备接合于绝缘基板的状态下的所述半导体元件。
标号的说明
1漂移层，2载流子积蓄层，3基极层，4层间绝缘膜，5发射极层，6接触层，7缓冲层，8集电极层，9集电极电极，10有源沟槽，11栅极绝缘膜，12栅极电极，13哑沟槽，14发射极电极，15阱层，16RESURF层，17场氧化膜，18栅极配线，19栅极流道，20第1钝化膜，21第2钝化膜，22导电性金属板，23阻挡金属，24Ni层，25Au层，30半导体基板，31第1主面，32第2主面，33接合部，41半导体元件，42接合材料，43绝缘基板，43a电路图案，43b绝缘层，43c基座板，44壳体，45粘接剂，46电极端子，47金属导线，47a金属导线，47b金属导线，48封装树脂，49散热材料，50冷却器，51阳极电极，52阳极层，53阴极电极，54阴极层，55源极电极，56源极层，57漏极层，58漏极电极，100半导体装置，210电源，220电力变换装置，221主变换电路，222驱动电路，223控制电路，230负载。

Claims (17)

1.一种半导体装置，其具有：
半导体元件；
上表面电极，其形成于所述半导体元件的上表面；以及
导电性金属板，其以铜为主成分，该导电性金属板被固相扩散接合于所述半导体元件的所述上表面电极之上。
2.根据权利要求1所述的半导体装置，其中，
所述上表面电极包含从与所述导电性金属板进行固相扩散接合的面侧起依次排列Au层、Ni层、Al层或AlSi层的层叠构造。
3.根据权利要求2所述的半导体装置，其中，
所述上表面电极形成于层间绝缘膜之上，
在所述上表面电极的所述Al层或所述AlSi层与层间绝缘膜之间，具有包含Ti或W的阻挡金属。
4.根据权利要求3所述的半导体装置，其中，
所述Au层的厚度大于或等于30nm且小于或等于70nm，所述Ni层的厚度大于或等于2μm且小于或等于15μm，所述Al层或所述AlSi层的厚度大于或等于3μm且小于或等于10μm，所述阻挡金属的厚度大于或等于10nm且小于或等于300nm。
5.根据权利要求1所述的半导体装置，其中，
所述上表面电极在所述导电性金属板的进行固相扩散接合的面具有Al层或AlSi层。
6.根据权利要求5所述的半导体装置，其中，
所述上表面电极形成于层间绝缘膜之上，
在所述上表面电极的所述Al层或所述AlSi层与层间绝缘膜之间，具有包含Ti或W的阻挡金属。
7.根据权利要求1至6中任一项所述的半导体装置，其中，
所述导电性金属板的平面尺寸比所述上表面电极的平面尺寸小，所述导电性金属板设置为未相对于所述上表面电极伸出。
8.根据权利要求1至7中任一项所述的半导体装置，其中，
所述导电性金属板的厚度大于或等于0.01mm且小于或等于1.0mm。
9.根据权利要求1至8中任一项所述的半导体装置，其中，
在所述半导体元件的上表面形成有多个所述上表面电极，所述上表面电极设置于多个所述导电性金属板的每一者。
10.根据权利要求1至9中任一项所述的半导体装置，其中，
所述导电性金属板在多处与所述半导体元件的所述上表面电极进行了固相扩散接合。
11.根据权利要求1至10中任一项所述的半导体装置，其中，
与所述导电性金属板相同材料的金属导线被固相扩散接合于所述导电性金属板。
12.根据权利要求1至10中任一项所述的半导体装置，其中，
所述导电性金属板是具有L字状的端部的电极端子，所述L字状的端部的下表面被固相扩散接合于所述上表面电极。
13.根据权利要求1至12中任一项所述的半导体装置，其中，
所述半导体元件为RC-IGBT。
14.根据权利要求1至13中任一项所述的半导体装置，其中，
所述半导体元件由宽带隙半导体形成。
15.一种电力变换装置，其具有：
主变换电路，其具有权利要求1至14中任一项所述的半导体装置，该主变换电路对输入进来的电力进行变换而输出；
驱动电路，其将对所述半导体装置进行驱动的驱动信号输出至所述半导体装置；以及
控制电路，其将对所述驱动电路进行控制的控制信号输出至所述驱动电路。
16.一种半导体装置的制造方法，其具有如下工序：
准备超声波工具、半导体元件及导电性金属板；
在工作台设置所述半导体元件，在所述半导体元件的上表面电极之上载置所述导电性金属板，使用所述超声波工具将所述导电性金属板固定、保持于所述上表面电极；
通过从所述超声波工具对所述导电性金属板赋予载荷及超声波振动，从而使所述导电性金属板固相扩散接合于所述上表面电极；
对接合有所述导电性金属板的所述半导体元件进行吹气；以及
进行所述吹气后的所述半导体元件的外观检查。
17.根据权利要求16所述的半导体装置的制造方法，其中，
在准备所述半导体元件的工序中，准备接合于绝缘基板的状态下的所述半导体元件。
CN202311334031.6A 2022-10-21 2023-10-16 半导体装置、电力变换装置及半导体装置的制造方法 Pending CN117917765A (zh)

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