JP7224272B2 - パワー半導体装置 - Google Patents

パワー半導体装置 Download PDF

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Publication number
JP7224272B2
JP7224272B2 JP2019197065A JP2019197065A JP7224272B2 JP 7224272 B2 JP7224272 B2 JP 7224272B2 JP 2019197065 A JP2019197065 A JP 2019197065A JP 2019197065 A JP2019197065 A JP 2019197065A JP 7224272 B2 JP7224272 B2 JP 7224272B2
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Japan
Prior art keywords
power semiconductor
external connection
semiconductor device
lid
control board
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Active
Application number
JP2019197065A
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English (en)
Japanese (ja)
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JP2021072329A5 (enExample
JP2021072329A (ja
Inventor
秀俊 石橋
義孝 木村
稔 江草
伸洋 浅地
一成 勅使河原
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2019197065A priority Critical patent/JP7224272B2/ja
Priority to US16/993,917 priority patent/US11742251B2/en
Priority to DE102020125705.8A priority patent/DE102020125705A1/de
Priority to CN202011146157.7A priority patent/CN112750801B/zh
Publication of JP2021072329A publication Critical patent/JP2021072329A/ja
Publication of JP2021072329A5 publication Critical patent/JP2021072329A5/ja
Application granted granted Critical
Publication of JP7224272B2 publication Critical patent/JP7224272B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • H01L23/049—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads being perpendicular to the base
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
    • H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
    • H01L23/24—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/49—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions wire-like arrangements or pins or rods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49838—Geometry or layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/16—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits
    • H01L25/162—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits the devices being mounted on two or more different substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R12/00—Structural associations of a plurality of mutually-insulated electrical connecting elements, specially adapted for printed circuits, e.g. printed circuit boards [PCB], flat or ribbon cables, or like generally planar structures, e.g. terminal strips, terminal blocks; Coupling devices specially adapted for printed circuits, flat or ribbon cables, or like generally planar structures; Terminals specially adapted for contact with, or insertion into, printed circuits, flat or ribbon cables, or like generally planar structures
    • H01R12/50—Fixed connections
    • H01R12/51—Fixed connections for rigid printed circuits or like structures
    • H01R12/55—Fixed connections for rigid printed circuits or like structures characterised by the terminals
    • H01R12/58—Fixed connections for rigid printed circuits or like structures characterised by the terminals terminals for insertion into holes
    • H01R12/585—Terminals having a press fit or a compliant portion and a shank passing through a hole in the printed circuit board
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R12/00—Structural associations of a plurality of mutually-insulated electrical connecting elements, specially adapted for printed circuits, e.g. printed circuit boards [PCB], flat or ribbon cables, or like generally planar structures, e.g. terminal strips, terminal blocks; Coupling devices specially adapted for printed circuits, flat or ribbon cables, or like generally planar structures; Terminals specially adapted for contact with, or insertion into, printed circuits, flat or ribbon cables, or like generally planar structures
    • H01R12/70—Coupling devices
    • H01R12/7005—Guiding, mounting, polarizing or locking means; Extractors
    • H01R12/7011—Locking or fixing a connector to a PCB
    • H01R12/7064—Press fitting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4846—Connecting portions with multiple bonds on the same bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Chemical & Material Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Inverter Devices (AREA)
JP2019197065A 2019-10-30 2019-10-30 パワー半導体装置 Active JP7224272B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2019197065A JP7224272B2 (ja) 2019-10-30 2019-10-30 パワー半導体装置
US16/993,917 US11742251B2 (en) 2019-10-30 2020-08-14 Power semiconductor device including press-fit connection terminal
DE102020125705.8A DE102020125705A1 (de) 2019-10-30 2020-10-01 Leistungs-Halbleitervorrichtung
CN202011146157.7A CN112750801B (zh) 2019-10-30 2020-10-23 功率半导体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2019197065A JP7224272B2 (ja) 2019-10-30 2019-10-30 パワー半導体装置

Publications (3)

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JP2021072329A JP2021072329A (ja) 2021-05-06
JP2021072329A5 JP2021072329A5 (enExample) 2021-12-02
JP7224272B2 true JP7224272B2 (ja) 2023-02-17

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JP2019197065A Active JP7224272B2 (ja) 2019-10-30 2019-10-30 パワー半導体装置

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US (1) US11742251B2 (enExample)
JP (1) JP7224272B2 (enExample)
CN (1) CN112750801B (enExample)
DE (1) DE102020125705A1 (enExample)

Families Citing this family (4)

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Publication number Priority date Publication date Assignee Title
CN114361115B (zh) * 2021-12-31 2022-08-23 中山市木林森微电子有限公司 一种多芯片埋入式封装模块结构
CN114823546A (zh) * 2022-03-26 2022-07-29 华为数字能源技术有限公司 功率模块及其制造方法、功率变换器和供电设备
KR102655235B1 (ko) * 2022-12-20 2024-04-08 주식회사 현대케피코 커넥터 매립형 하우징 앗세이 적용 제어기
CN119695016B (zh) * 2025-02-24 2025-07-18 深圳市万联芯科技有限公司 一种集成电路芯片的封装结构及其方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011187564A (ja) 2010-03-05 2011-09-22 Keihin Corp 半導体装置
WO2014132803A1 (ja) 2013-02-26 2014-09-04 三菱電機株式会社 電力用半導体装置
JP2014175444A (ja) 2013-03-08 2014-09-22 Fuji Electric Co Ltd 半導体装置
JP2017046529A (ja) 2015-08-28 2017-03-02 三菱電機株式会社 半導体装置、インテリジェントパワーモジュールおよび電力変換装置
JP2017163135A (ja) 2016-03-08 2017-09-14 アーベーベー・シュバイツ・アーゲー 半導体モジュール
JP2018133481A (ja) 2017-02-16 2018-08-23 三菱電機株式会社 半導体モジュールおよびインバータ装置
JP2019067970A (ja) 2017-10-03 2019-04-25 三菱電機株式会社 半導体装置

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DE102006025453B4 (de) * 2006-05-31 2009-12-24 Infineon Technologies Ag Halbleiterschaltungsanordnung
JP2009081325A (ja) * 2007-09-27 2009-04-16 Sanyo Electric Co Ltd 回路装置
KR101463074B1 (ko) * 2008-01-10 2014-11-21 페어차일드코리아반도체 주식회사 리드리스 패키지
JP5136513B2 (ja) 2009-05-15 2013-02-06 トヨタ自動車株式会社 半導体装置
EP2538761B1 (en) * 2011-06-20 2014-01-29 STMicroelectronics Srl Intelligent Power Module and related assembling method
JP5633496B2 (ja) * 2011-09-29 2014-12-03 三菱電機株式会社 半導体装置及びその製造方法
KR101443985B1 (ko) * 2012-12-14 2014-11-03 삼성전기주식회사 전력 모듈 패키지
JP6380244B2 (ja) * 2015-06-15 2018-08-29 三菱電機株式会社 半導体装置、電力変換装置
JP6451569B2 (ja) * 2015-09-14 2019-01-16 株式会社デンソー 電子装置
JP6559093B2 (ja) * 2016-05-16 2019-08-14 三菱電機株式会社 半導体装置
JP7099020B2 (ja) * 2018-04-10 2022-07-12 株式会社デンソー 圧入端子、及び圧入端子を含む電子装置

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011187564A (ja) 2010-03-05 2011-09-22 Keihin Corp 半導体装置
WO2014132803A1 (ja) 2013-02-26 2014-09-04 三菱電機株式会社 電力用半導体装置
JP2014175444A (ja) 2013-03-08 2014-09-22 Fuji Electric Co Ltd 半導体装置
JP2017046529A (ja) 2015-08-28 2017-03-02 三菱電機株式会社 半導体装置、インテリジェントパワーモジュールおよび電力変換装置
JP2017163135A (ja) 2016-03-08 2017-09-14 アーベーベー・シュバイツ・アーゲー 半導体モジュール
JP2018133481A (ja) 2017-02-16 2018-08-23 三菱電機株式会社 半導体モジュールおよびインバータ装置
JP2019067970A (ja) 2017-10-03 2019-04-25 三菱電機株式会社 半導体装置

Also Published As

Publication number Publication date
US20210134686A1 (en) 2021-05-06
US11742251B2 (en) 2023-08-29
DE102020125705A1 (de) 2021-05-06
CN112750801A (zh) 2021-05-04
JP2021072329A (ja) 2021-05-06
CN112750801B (zh) 2024-08-02

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