JP2019067970A5 - - Google Patents

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Publication number
JP2019067970A5
JP2019067970A5 JP2017193299A JP2017193299A JP2019067970A5 JP 2019067970 A5 JP2019067970 A5 JP 2019067970A5 JP 2017193299 A JP2017193299 A JP 2017193299A JP 2017193299 A JP2017193299 A JP 2017193299A JP 2019067970 A5 JP2019067970 A5 JP 2019067970A5
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JP
Japan
Prior art keywords
wall portion
insulating substrate
press
fit
wall
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2017193299A
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English (en)
Japanese (ja)
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JP2019067970A (ja
JP6806024B2 (ja
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Priority to JP2017193299A priority Critical patent/JP6806024B2/ja
Priority claimed from JP2017193299A external-priority patent/JP6806024B2/ja
Priority to US15/959,353 priority patent/US10388581B2/en
Priority to DE102018212828.6A priority patent/DE102018212828B4/de
Priority to CN201811139732.3A priority patent/CN109599372B/zh
Publication of JP2019067970A publication Critical patent/JP2019067970A/ja
Publication of JP2019067970A5 publication Critical patent/JP2019067970A5/ja
Application granted granted Critical
Publication of JP6806024B2 publication Critical patent/JP6806024B2/ja
Active legal-status Critical Current
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JP2017193299A 2017-10-03 2017-10-03 半導体装置 Active JP6806024B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2017193299A JP6806024B2 (ja) 2017-10-03 2017-10-03 半導体装置
US15/959,353 US10388581B2 (en) 2017-10-03 2018-04-23 Semiconductor device having press-fit terminals disposed in recesses in a case frame
DE102018212828.6A DE102018212828B4 (de) 2017-10-03 2018-08-01 Halbleitervorrichtung
CN201811139732.3A CN109599372B (zh) 2017-10-03 2018-09-28 半导体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017193299A JP6806024B2 (ja) 2017-10-03 2017-10-03 半導体装置

Publications (3)

Publication Number Publication Date
JP2019067970A JP2019067970A (ja) 2019-04-25
JP2019067970A5 true JP2019067970A5 (enExample) 2020-01-09
JP6806024B2 JP6806024B2 (ja) 2020-12-23

Family

ID=65727861

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017193299A Active JP6806024B2 (ja) 2017-10-03 2017-10-03 半導体装置

Country Status (4)

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US (1) US10388581B2 (enExample)
JP (1) JP6806024B2 (enExample)
CN (1) CN109599372B (enExample)
DE (1) DE102018212828B4 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102500480B1 (ko) * 2017-12-22 2023-02-16 삼성전자주식회사 접촉 부재를 포함하는 전자 장치 및 그 제작 방법
JP7180570B2 (ja) * 2019-09-03 2022-11-30 三菱電機株式会社 半導体モジュール
JP7224272B2 (ja) 2019-10-30 2023-02-17 三菱電機株式会社 パワー半導体装置
CN111162057B (zh) * 2020-01-06 2022-01-21 珠海格力电器股份有限公司 半导体功率器件及用于半导体功率器件的功率处理组件
EP3961697A1 (de) * 2020-08-25 2022-03-02 Siemens Aktiengesellschaft Halbleitermodul mit einer vertiefung
DE102022118268A1 (de) * 2022-07-21 2024-02-01 Semikron Elektronik Gmbh & Co. Kg Baugruppe mit einem Kunststoffformkörper und einer Mehrzahl von Lastanschlusselementen und Leistungshalbleitereinrichtung hiermit
EP4336551B1 (en) 2022-09-09 2025-09-03 Hitachi Energy Ltd Power module comprising a semiconductor module component and an alignment part, and method for forming the power module

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2928987B2 (ja) * 1995-03-31 1999-08-03 日本航空電子工業株式会社 コンタクト及びその製造方法
CN100517669C (zh) * 2004-06-08 2009-07-22 富士电机电子技术株式会社 半导体装置
JP4475160B2 (ja) * 2005-04-13 2010-06-09 株式会社デンソー 電子装置の製造方法
DE102006040435B3 (de) 2006-08-29 2008-01-31 Infineon Technologies Ag Anordnung und Verfahren zur Montage eines Leistungshalbleitermoduls
JP4985116B2 (ja) * 2007-03-08 2012-07-25 富士電機株式会社 半導体装置およびその製造方法
DE102010003367B4 (de) * 2010-03-26 2015-06-25 Infineon Technologies Ag Einpress-Verbindungen für Elektronikmodule
DE102010038727B4 (de) 2010-07-30 2015-07-16 Infineon Technologies Ag Leistungshaltleitermodul und Verfahren zur Herstellung eines Leistungshalbleitermoduls
JP5383621B2 (ja) * 2010-10-20 2014-01-08 三菱電機株式会社 パワー半導体装置
CN103210489B (zh) * 2010-11-16 2016-06-15 富士电机株式会社 半导体装置
US9343388B2 (en) * 2012-01-25 2016-05-17 Mitsubishi Electric Corporation Power semiconductor device
JP5867966B2 (ja) * 2012-08-29 2016-02-24 新電元工業株式会社 半導体装置
WO2014132803A1 (ja) * 2013-02-26 2014-09-04 三菱電機株式会社 電力用半導体装置
JP2015026820A (ja) * 2013-06-18 2015-02-05 株式会社デンソー 電子装置
JP2015023226A (ja) 2013-07-23 2015-02-02 三菱電機株式会社 ワイドギャップ半導体装置
CN103531555B (zh) * 2013-10-24 2016-01-20 江苏宏微科技股份有限公司 免焊接端子的功率模块
US20160240452A1 (en) * 2015-02-18 2016-08-18 Semiconductor Components Industries, Llc Semiconductor packages with sub-terminals and related methods
JP6541593B2 (ja) * 2015-05-15 2019-07-10 三菱電機株式会社 電力用半導体装置
US9979105B2 (en) * 2015-05-15 2018-05-22 Mitsubishi Electric Corporation Power semiconductor device
DE112016004757T5 (de) * 2015-12-10 2018-07-05 Hitachi Automotive Systems, Ltd. Elektronische steuervorrichtung
JP2017193299A (ja) 2016-04-22 2017-10-26 トヨタ自動車株式会社 車両のバッテリ搭載構造
JP6705394B2 (ja) * 2017-02-16 2020-06-03 三菱電機株式会社 半導体モジュールおよびインバータ装置

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