JP2021064812A - 絶縁基体、半導体パッケージおよび半導体装置 - Google Patents
絶縁基体、半導体パッケージおよび半導体装置 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 56
- 239000000758 substrate Substances 0.000 claims abstract description 95
- 229910052751 metal Inorganic materials 0.000 claims abstract description 93
- 239000002184 metal Substances 0.000 claims abstract description 93
- 239000000463 material Substances 0.000 claims abstract description 76
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 10
- 239000004020 conductor Substances 0.000 description 10
- 238000000034 method Methods 0.000 description 7
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 6
- 239000000919 ceramic Substances 0.000 description 6
- 239000007769 metal material Substances 0.000 description 6
- 229910052750 molybdenum Inorganic materials 0.000 description 6
- 239000011733 molybdenum Substances 0.000 description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 6
- 229910052721 tungsten Inorganic materials 0.000 description 6
- 239000010937 tungsten Substances 0.000 description 6
- 239000003989 dielectric material Substances 0.000 description 5
- 238000005304 joining Methods 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 229910010293 ceramic material Inorganic materials 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910000531 Co alloy Inorganic materials 0.000 description 2
- 229910001182 Mo alloy Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910001080 W alloy Inorganic materials 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- WUUZKBJEUBFVMV-UHFFFAOYSA-N copper molybdenum Chemical compound [Cu].[Mo] WUUZKBJEUBFVMV-UHFFFAOYSA-N 0.000 description 2
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 239000002241 glass-ceramic Substances 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 238000004080 punching Methods 0.000 description 2
- 238000005096 rolling process Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 235000014676 Phragmites communis Nutrition 0.000 description 1
- RIRXDDRGHVUXNJ-UHFFFAOYSA-N [Cu].[P] Chemical compound [Cu].[P] RIRXDDRGHVUXNJ-UHFFFAOYSA-N 0.000 description 1
- KGWWEXORQXHJJQ-UHFFFAOYSA-N [Fe].[Co].[Ni] Chemical compound [Fe].[Co].[Ni] KGWWEXORQXHJJQ-UHFFFAOYSA-N 0.000 description 1
- SNAAJJQQZSMGQD-UHFFFAOYSA-N aluminum magnesium Chemical compound [Mg].[Al] SNAAJJQQZSMGQD-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical compound [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
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Abstract
Description
図1は本発明の一実施形態に係る半導体装置100の上面からの斜視図を示している。この図において、半導体装置100は、本発明の実施形態に係る半導体パッケージ10、半導体素子11および蓋体12を備えている。
体素子11は、フォトダイオード(PD:Photo Diode)等であってもよい。LDの場合
には、枠体7に絶縁基体1を取り付ける貫通孔71以外に、貫通孔を設けて光ファイバを取り付けてもよい。
図3は、本発明の一実施形態に係る半導体パッケージを示す上面からの斜視図である。また、図4は、本発明の一実施形態に係る半導体パッケージの上面からの平面図である。また、図5は、図4に示した本発明の一実施形態に係る半導体パッケージの、B−B線での断面図である。そして、図6は、本発明の一実施形態に係る半導体パッケージの分解斜視図である。これらの図において、半導体パッケージ10は、基板6、枠体7および上述した本発明の実施形態に係る絶縁基体1を備えている。
図7は、本発明の一実施形態に係る絶縁基体の上面からの斜視図である。また、図8は、本発明の一実施形態に係る絶縁基体の下面からの斜視図である。また、図9は、本発明の一実施形態に係る絶縁基体(接合材なし)の上面からの斜視図である。また、図10は、本発明の他の実施形態に係る絶縁基体の上面からの斜視図である。そして、図11は、本発明の他の実施形態に係る絶縁基体(接合材なし)の上面からの斜視図である。図9、図10および図11においては、説明の便宜上リード端子5を省略している。これらの図において、絶縁基体1は、絶縁基板2、金属層3、接合材4、リード端子5を備えている。また、図10および図11に示すように、他の実施形態に係る絶縁基体1としては、上述した構成に加えて、絶縁基板2の上面に立壁部8を有していてもよい。
。接合材4は、例えば、銀ろうから成る。他にも、りん銅ろう、アルミマグネシウムろう等から成っていてもよい。
することができる。
絶縁基板2は、たとえば複数の第1絶縁層22および第2絶縁層23が酸化アルミニウム焼結体からなる場合であれば、次のようにして製作される。まず、酸化アルミニウムからなる原料粉末に適当な有機バインダおよび溶剤等を添加混合してスラリーを作製する。次に、スラリーをドクターブレード法等の成形法でシート状に成形することにより複数枚のセラミックグリーンシートを作製する。そして、セラミックグリーンシートを切断加工や打ち抜き加工により適当な形状とする。このとき、一番上方に位置するグリーンシートの一部に溝部21になる溝が形成されている。その後、複数のセラミックグリーンシートを積層して、圧着する。
2 絶縁基板
21 溝部
211 突出部
22 第1絶縁層
23 第2絶縁層
24 接地導体層
3 金属層
31 第1金属層
32 第2金属層
4 接合材
41 第1接合材
42 第2接合材
5 リード端子
6 基板
61 実装領域
7 枠体
71 貫通孔
8 立壁部
10 半導体パッケージ
11 半導体素子
12 蓋体
100 半導体装置
Claims (8)
- 上面から側面にかけて溝部を有する板状の絶縁基板と、
前記絶縁基板の上面に位置した第1金属層と、前記第1金属層と連続して、前記溝部の内面に位置した第2金属層とを有する金属層と、
前記金属層の上面に位置した接合材と、
上面視において前記溝部と重なるとともに、前記接合材を介して前記第1金属層の上面に位置したリード端子とを備えており、
前記接合材は、前記リード端子を前記第1金属層に固定する第1接合材と、前記第1接合材と連続して、前記第2金属層の上面に位置した第2接合材とを有しており、
前記溝部は、内壁が突出した突出部を有するとともに、前記第2接合材は、前記突出部と前記リード端子との間に位置していることを特徴とする絶縁基板。 - 側面視において、前記突出部は、前記溝部の内壁同士が突出していることを特徴とする請求項1に記載の絶縁基板。
- 前記第2接合材は、前記突出部よりも上側に前記突出部の下側よりも多く位置していることを特徴とする請求項1または請求項2に記載の絶縁基板。
- 前記絶縁基板は、複数の絶縁層が積層されているとともに、
前記複数の絶縁層は、上面に前記第1金属層が位置した第1絶縁層と、
前記第1絶縁層の下面に位置した第2絶縁層とを有しており、
前記溝部は前記第1絶縁層の上面から側面にかけて位置していることを特徴とする請求項1〜3のいずれか1つに記載の絶縁基板。 - 上面視において、前記溝部と重なる位置は、前記第2絶縁層の上面が露出していることを特徴とする請求項4に記載の絶縁基板。
- 上面視において、前記溝部の幅は、前記第1金属層の幅よりも大きいことを特徴とする請求項1〜5のいずれか1つに記載の絶縁基板。
- 上面に半導体素子が実装される基板と、
前記基板の前記実装領域を取り囲んで位置した、側壁に貫通孔を有する枠体と、
前記貫通孔に取り付けられた請求項1〜6のいずれか1つに記載の絶縁基板とを備えていることを特徴とする半導体パッケージ。 - 請求項7に記載の半導体パッケージと、
前記半導体パッケージの前記実装領域に実装された半導体素子と、
前記半導体素子を覆って、前記半導体パッケージの前記枠体の上端に接合された蓋体とを備えていることを特徴とする半導体装置。
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