JP2021057596A - フォトレジストウエハの露光後プロセスの方法及び装置 - Google Patents
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
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- Condensed Matter Physics & Semiconductors (AREA)
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- Computer Networks & Wireless Communication (AREA)
- Health & Medical Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
102 チャンバ本体
104 処理容積
106 ペデスタル
108 第1の電極
110 基板
112 流体閉じ込めリング
114 導管
116 処理流体源
118 バルブ
120 リンス流体源
122 バルブ
124 流体出口
126 導管
128 ドレイン
130 バルブ
132 流体入口
134 導管
136 真空源
138 導管
140 熱源
142 温度感知装置
144 電源
146 感知装置
148 スリットバルブ
150 スリットバルブドア
152 ステム
154 第2の電極
156 導管
158 パージガス源
160 バルブ
162 導管
164 感知装置
166 電源
168 温度感知装置
170 熱源
172 ポンプ
174 距離
180 X軸
300 チャンバ
302 第3の電極
304 誘電性閉じ込めリング
306 流体出口
308 Oリング
310 領域
312 領域
400 チャンバ
402 第4の電極
404 誘電性閉じ込めリング
408 Oリング
410 領域
412 領域
414 導管
416 流体出口
418 排気口
500 チャンバ
502 チャンバ本体
504 処理容積
506 ペデスタル
508 第1の電極
512 流体閉じ込めリング
514 ベアリング部材
516 回転ステム
518 第2の電極
700 チャンバ
702 本体
704 第1の処理容積
706 ドア
708 第1の電極
710 基板
712 流体閉じ込めリング
714 導管
716 処理流体源
720 第1のリンス流体源
722 バルブ
728 ドレイン
730 バルブ
731 導管
733 バルブ
734 導管
735 排気口
736 真空源
748 出口
749 入口
750 第2の電極
752 Oリング
754 処理容積
756 導管
758 パージガス源
760 バルブ
762 導管
764 熱源
766 温度感知装置
768 電源
770 感知装置
772 モータ
774 導管
776 バルブ
778 第2のリンス流体源
780 出口
782 出口
784 導管
786 バルブ
788 第2のドレイン
790 入口
792 開口
794 側壁
796 リッド
798 シャフト
800 チャンバ
802 ドア
804 リフト部材
900 方法
910 工程
920 工程
930 工程
940 工程
950 工程
Claims (15)
- 処理容積を画定するチャンバ本体と、
前記処理容積内に配置されたペデスタルと、
前記ペデスタルを通して前記処理容積に連結された1つ以上の流体源と、
前記ペデスタルを通して前記処理容積に連結されたドレインと、
前記ペデスタルに連結された第1の電極と、
前記第1の電極から径方向外側に前記ペデスタルに連結された流体閉じ込めリングと、
前記ペデスタルの反対側に配置され、前記チャンバ本体を通って延伸する可動ステムと、
前記ステムに連結された第2の電極と
を備える、基板処理装置。 - 前記流体閉じ込めリングはセラミック材料から形成されている、請求項1に記載の装置。
- 前記第1の電極及び前記第2の電極は、電気的に導電性の金属材料から形成されている、請求項1に記載の装置。
- 前記第1の電極は真空源に連結されている、請求項1に記載の装置。
- 前記第1の電極は、熱源、電源、温度感知装置、及び感知装置のうちの1つ以上に連結されている、請求項1に記載の装置。
- 前記第2の電極は、熱源、電源、温度感知装置、及び感知装置のうちの1つ以上に連結されている、請求項5に記載の装置。
- パージガス源が、前記ステム及び前記第2の電極を通して前記処理容積に連結されている、請求項1に記載の装置。
- 処理容積を画定するチャンバ本体と、
前記処理容積内に配置されたペデスタルと、
前記ペデスタルを通して前記処理容積に連結されたドレインと、
前記ペデスタルに連結された第1の電極と、
前記第1の電極から径方向外側に前記ペデスタルに連結された流体閉じ込めリングと、
前記ペデスタルの反対側に配置され、前記チャンバ本体を通って延伸する可動ステムと、
前記ステムに連結された第2の電極と、
前記第2の電極に連結された誘電性閉じ込めリングと、
前記誘電性閉じ込めリングを通して前記処理容積に連結された1つ以上の流体源と
を備える、基板処理装置。 - 前記1つ以上の流体源は、処理流体源及びリンス流体源を含む、請求項8に記載の装置。
- 前記第1の電極は真空源に連結されている、請求項8に記載の装置。
- 前記第1の電極は、熱源、電源、温度感知装置、及び感知装置のうちの1つ以上に連結されている、請求項8に記載の装置。
- パージガス源が、前記ステム及び前記誘電性閉じ込めリングを通して前記処理容積に連結されている、請求項8に記載の装置。
- 処理容積を画定するチャンバ本体と、
前記処理容積内に配置されたペデスタルと、
前記ペデスタルに連結された第1の電極と、
前記ペデスタルの反対側に配置され、前記チャンバ本体を通って延伸する可動ステムと、
前記ステムに連結された第2の電極と、
前記第2の電極に連結された誘電性閉じ込めリングと、
前記第2の電極の反対側で前記誘電性閉じ込めリングに連結されたエラストマOリングと、
前記誘電性閉じ込めリングを通して前記処理容積に連結された1つ以上の流体源と、
前記誘電性閉じ込めリングを通して前記処理容積に連結されたドレインと、
前記誘電性閉じ込めリングを通して前記処理容積に連結されたパージガス源と
を備える基板処理装置。 - 前記第1の電極は真空源に連結されている、請求項13に記載の装置。
- 前記エラストマOリングは、処理位置において前記第1の電極または前記ペデスタルのどちらかとコンタクトし、前記誘電性閉じ込めリング内に流体を維持するように構成された、請求項13に記載の装置。
Applications Claiming Priority (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201562261171P | 2015-11-30 | 2015-11-30 | |
US62/261,171 | 2015-11-30 | ||
US201562267531P | 2015-12-15 | 2015-12-15 | |
US62/267,531 | 2015-12-15 | ||
US14/989,488 US10203604B2 (en) | 2015-11-30 | 2016-01-06 | Method and apparatus for post exposure processing of photoresist wafers |
US14/989,488 | 2016-01-06 | ||
JP2016226501A JP6791732B2 (ja) | 2015-11-30 | 2016-11-22 | フォトレジストウエハの露光後プロセスの方法及び装置 |
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US20170154797A1 (en) | 2017-06-01 |
US10203604B2 (en) | 2019-02-12 |
US11112697B2 (en) | 2021-09-07 |
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CN113835299A (zh) | 2021-12-24 |
US11899366B2 (en) | 2024-02-13 |
US20190187563A1 (en) | 2019-06-20 |
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US20170363960A1 (en) | 2017-12-21 |
JP7297727B2 (ja) | 2023-06-26 |
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JP2017152679A (ja) | 2017-08-31 |
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CN106814556A (zh) | 2017-06-09 |
TWI806503B (zh) | 2023-06-21 |
US20220004104A1 (en) | 2022-01-06 |
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