JP2020504069A5 - - Google Patents

Download PDF

Info

Publication number
JP2020504069A5
JP2020504069A5 JP2019535384A JP2019535384A JP2020504069A5 JP 2020504069 A5 JP2020504069 A5 JP 2020504069A5 JP 2019535384 A JP2019535384 A JP 2019535384A JP 2019535384 A JP2019535384 A JP 2019535384A JP 2020504069 A5 JP2020504069 A5 JP 2020504069A5
Authority
JP
Japan
Prior art keywords
single crystal
crystal silicon
silicon wafer
micrometers
density
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2019535384A
Other languages
English (en)
Japanese (ja)
Other versions
JP7110204B2 (ja
JP2020504069A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/US2017/066063 external-priority patent/WO2018125565A1/en
Publication of JP2020504069A publication Critical patent/JP2020504069A/ja
Publication of JP2020504069A5 publication Critical patent/JP2020504069A5/ja
Priority to JP2022115481A priority Critical patent/JP7541551B2/ja
Application granted granted Critical
Publication of JP7110204B2 publication Critical patent/JP7110204B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2019535384A 2016-12-28 2017-12-13 イントリンシックゲッタリングおよびゲート酸化物完全性歩留まりを有するシリコンウエハを処理する方法 Active JP7110204B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2022115481A JP7541551B2 (ja) 2016-12-28 2022-07-20 イントリンシックゲッタリングおよびゲート酸化物完全性歩留まりを有するシリコンウエハを処理する方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201662439621P 2016-12-28 2016-12-28
US62/439,621 2016-12-28
PCT/US2017/066063 WO2018125565A1 (en) 2016-12-28 2017-12-13 Method of treating silicon wafers to have intrinsic gettering and gate oxide integrity yield

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2022115481A Division JP7541551B2 (ja) 2016-12-28 2022-07-20 イントリンシックゲッタリングおよびゲート酸化物完全性歩留まりを有するシリコンウエハを処理する方法

Publications (3)

Publication Number Publication Date
JP2020504069A JP2020504069A (ja) 2020-02-06
JP2020504069A5 true JP2020504069A5 (enExample) 2021-01-28
JP7110204B2 JP7110204B2 (ja) 2022-08-01

Family

ID=61017987

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2019535384A Active JP7110204B2 (ja) 2016-12-28 2017-12-13 イントリンシックゲッタリングおよびゲート酸化物完全性歩留まりを有するシリコンウエハを処理する方法
JP2022115481A Active JP7541551B2 (ja) 2016-12-28 2022-07-20 イントリンシックゲッタリングおよびゲート酸化物完全性歩留まりを有するシリコンウエハを処理する方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2022115481A Active JP7541551B2 (ja) 2016-12-28 2022-07-20 イントリンシックゲッタリングおよびゲート酸化物完全性歩留まりを有するシリコンウエハを処理する方法

Country Status (8)

Country Link
US (2) US10453703B2 (enExample)
EP (2) EP3562978B1 (enExample)
JP (2) JP7110204B2 (enExample)
KR (2) KR102306730B1 (enExample)
CN (2) CN110799678B (enExample)
SG (1) SG10201913071XA (enExample)
TW (2) TWI724266B (enExample)
WO (1) WO2018125565A1 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6447439B2 (ja) * 2015-09-28 2019-01-09 信越半導体株式会社 貼り合わせｓｏｉウェーハの製造方法
KR102306730B1 (ko) * 2016-12-28 2021-09-30 썬에디슨 세미컨덕터 리미티드 고유 게터링 및 게이트 산화물 무결성 수율을 갖도록 규소 웨이퍼들을 처리하는 방법
DE102017219255A1 (de) * 2017-10-26 2019-05-02 Siltronic Ag Halbleiterscheibe aus einkristallinem Silizium
CN108961218B (zh) * 2018-06-11 2021-07-02 无锡维胜威信息科技有限公司 太阳能硅片晶花提取方法
US10943813B2 (en) * 2018-07-13 2021-03-09 Globalwafers Co., Ltd. Radio frequency silicon on insulator wafer platform with superior performance, stability, and manufacturability
JP7388434B2 (ja) * 2019-04-16 2023-11-29 信越半導体株式会社 シリコン単結晶ウェーハの製造方法及びシリコン単結晶ウェーハ
JP7251616B2 (ja) * 2019-04-26 2023-04-04 富士電機株式会社 半導体装置および製造方法
CN114631193A (zh) * 2019-08-09 2022-06-14 尖端设备技术公司 具有低氧浓度区域的晶片
US11742203B2 (en) * 2020-02-26 2023-08-29 The Hong Kong University Of Science And Technology Method for growing III-V compound semiconductor thin films on silicon-on-insulators
US11695048B2 (en) * 2020-04-09 2023-07-04 Sumco Corporation Silicon wafer and manufacturing method of the same
TWI768957B (zh) * 2021-06-08 2022-06-21 合晶科技股份有限公司 複合基板及其製造方法
CN113793800B (zh) * 2021-08-18 2024-04-09 万华化学集团电子材料有限公司 一种半导体单晶硅片的除杂工艺及制造工艺
TWI865954B (zh) * 2021-11-04 2024-12-11 日商Ｓｕｍｃｏ股份有限公司 矽晶圓及磊晶矽晶圓
JP7658332B2 (ja) * 2021-11-04 2025-04-08 株式会社Sumco シリコンウェーハおよびエピタキシャルシリコンウェーハ
TWI854344B (zh) * 2021-11-04 2024-09-01 日商Ｓｕｍｃｏ股份有限公司 矽晶圓及磊晶矽晶圓
CN116259538B (zh) * 2023-03-30 2023-11-17 苏州龙驰半导体科技有限公司 提高SiC材料栅氧界面态质量的方法及其应用

Family Cites Families (80)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4501060A (en) 1983-01-24 1985-02-26 At&T Bell Laboratories Dielectrically isolated semiconductor devices
US4755865A (en) 1986-01-21 1988-07-05 Motorola Inc. Means for stabilizing polycrystalline semiconductor layers
JPH06105691B2 (ja) 1988-09-29 1994-12-21 株式会社富士電機総合研究所 炭素添加非晶質シリコン薄膜の製造方法
JP2617798B2 (ja) 1989-09-22 1997-06-04 三菱電機株式会社 積層型半導体装置およびその製造方法
US5024723A (en) 1990-05-07 1991-06-18 Goesele Ulrich M Method of producing a thin silicon on insulator layer by wafer bonding and chemical thinning
IT1242014B (it) * 1990-11-15 1994-02-02 Memc Electronic Materials Procedimento per il trattamento di fette di silicio per ottenere in esse profili di precipitazione controllati per la produzione di componenti elettronici.
FR2681472B1 (fr) 1991-09-18 1993-10-29 Commissariat Energie Atomique Procede de fabrication de films minces de materiau semiconducteur.
JPH07106512A (ja) 1993-10-04 1995-04-21 Sharp Corp 分子イオン注入を用いたｓｉｍｏｘ処理方法
US6043138A (en) 1996-09-16 2000-03-28 Advanced Micro Devices, Inc. Multi-step polysilicon deposition process for boron penetration inhibition
US5783469A (en) 1996-12-10 1998-07-21 Advanced Micro Devices, Inc. Method for making nitrogenated gate structure for improved transistor performance
US5994761A (en) 1997-02-26 1999-11-30 Memc Electronic Materials Spa Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-less process therefor
US6068928A (en) 1998-02-25 2000-05-30 Siemens Aktiengesellschaft Method for producing a polycrystalline silicon structure and polycrystalline silicon layer to be produced by the method
TW589415B (en) 1998-03-09 2004-06-01 Shinetsu Handotai Kk Method for producing silicon single crystal wafer and silicon single crystal wafer
WO2000013226A1 (en) 1998-09-02 2000-03-09 Memc Electronic Materials, Inc. Process for preparing an ideal oxygen precipitating silicon wafer
DE69928434T2 (de) * 1998-09-02 2006-07-27 Memc Electronic Materials, Inc. Wärmebehandelte siliziumplättchen mit verbesserter eigengetterung
EP1624482B1 (en) * 1998-09-02 2009-07-29 MEMC Electronic Materials, Inc. Thermally annealed silicon wafers having improved intrinsic gettering
JP4313874B2 (ja) 1999-02-02 2009-08-12 キヤノン株式会社 基板の製造方法
US6346459B1 (en) 1999-02-05 2002-02-12 Silicon Wafer Technologies, Inc. Process for lift off and transfer of semiconductor devices onto an alien substrate
KR100378184B1 (ko) * 1999-11-13 2003-03-29 삼성전자주식회사 제어된 결함 분포를 갖는 실리콘 웨이퍼, 그의 제조공정및 단결정 실리콘 잉곳의 제조를 위한 초크랄스키 풀러
US20020090758A1 (en) 2000-09-19 2002-07-11 Silicon Genesis Corporation Method and resulting device for manufacturing for double gated transistors
US6897084B2 (en) * 2001-04-11 2005-05-24 Memc Electronic Materials, Inc. Control of oxygen precipitate formation in high resistivity CZ silicon
US6562127B1 (en) 2002-01-16 2003-05-13 The United States Of America As Represented By The Secretary Of The Navy Method of making mosaic array of thin semiconductor material of large substrates
KR100745309B1 (ko) * 2002-04-10 2007-08-01 엠이엠씨 일렉트로닉 머티리얼즈 인코포레이티드 이상적인 산소 침전 실리콘 웨이퍼에서 디누드 구역깊이를 조절하기 위한 방법
US6995430B2 (en) 2002-06-07 2006-02-07 Amberwave Systems Corporation Strained-semiconductor-on-insulator device structures
US7074623B2 (en) 2002-06-07 2006-07-11 Amberwave Systems Corporation Methods of forming strained-semiconductor-on-insulator finFET device structures
US7057234B2 (en) 2002-12-06 2006-06-06 Cornell Research Foundation, Inc. Scalable nano-transistor and memory using back-side trapping
DE10334954A1 (de) 2003-07-31 2005-02-24 Voith Turbo Gmbh & Co. Kg Hydropumpe
KR100531552B1 (ko) 2003-09-05 2005-11-28 주식회사 하이닉스반도체 실리콘 웨이퍼 및 그 제조방법
CN1856873A (zh) 2003-09-26 2006-11-01 卢万天主教大学 制造具有降低的欧姆损耗的多层半导体结构的方法
US6992025B2 (en) 2004-01-12 2006-01-31 Sharp Laboratories Of America, Inc. Strained silicon on insulator from film transfer and relaxation by hydrogen implantation
JP2005223293A (ja) 2004-02-09 2005-08-18 Sumitomo Mitsubishi Silicon Corp シリコンウェーハの熱処理方法およびシリコンウェーハ
JP4794137B2 (ja) 2004-04-23 2011-10-19 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 シリコン半導体基板の熱処理方法
US7279400B2 (en) 2004-08-05 2007-10-09 Sharp Laboratories Of America, Inc. Method of fabricating single-layer and multi-layer single crystalline silicon and silicon devices on plastic using sacrificial glass
US7312487B2 (en) 2004-08-16 2007-12-25 International Business Machines Corporation Three dimensional integrated circuit
US7476594B2 (en) 2005-03-30 2009-01-13 Cree, Inc. Methods of fabricating silicon nitride regions in silicon carbide and resulting structures
DE102005028202B4 (de) 2005-06-17 2010-04-15 Siltronic Ag Verfahren zur Herstellung von Halbleiterscheiben aus Silizium
FR2890489B1 (fr) 2005-09-08 2008-03-07 Soitec Silicon On Insulator Procede de fabrication d'une heterostructure de type semi-conducteur sur isolant
JP2008016652A (ja) 2006-07-06 2008-01-24 Shin Etsu Handotai Co Ltd シリコンウェーハの製造方法
JP5167654B2 (ja) * 2007-02-26 2013-03-21 信越半導体株式会社 シリコン単結晶ウエーハの製造方法
JP4445524B2 (ja) 2007-06-26 2010-04-07 株式会社東芝 半導体記憶装置の製造方法
JP2009016692A (ja) 2007-07-06 2009-01-22 Toshiba Corp 半導体記憶装置の製造方法と半導体記憶装置
US7915706B1 (en) 2007-07-09 2011-03-29 Rf Micro Devices, Inc. Linearity improvements of semiconductor substrate using passivation
US7879699B2 (en) 2007-09-28 2011-02-01 Infineon Technologies Ag Wafer and a method for manufacturing a wafer
US8128749B2 (en) 2007-10-04 2012-03-06 International Business Machines Corporation Fabrication of SOI with gettering layer
US7868419B1 (en) 2007-10-18 2011-01-11 Rf Micro Devices, Inc. Linearity improvements of semiconductor substrate based radio frequency devices
US20090236689A1 (en) 2008-03-24 2009-09-24 Freescale Semiconductor, Inc. Integrated passive device and method with low cost substrate
FR2933234B1 (fr) 2008-06-30 2016-09-23 S O I Tec Silicon On Insulator Tech Substrat bon marche a structure double et procede de fabrication associe
JP2009177194A (ja) 2009-03-19 2009-08-06 Sumco Corp シリコンウェーハの製造方法、シリコンウェーハ
US8058137B1 (en) 2009-04-14 2011-11-15 Monolithic 3D Inc. Method for fabrication of a semiconductor device and structure
JP2010258083A (ja) 2009-04-22 2010-11-11 Panasonic Corp Ｓｏｉウェーハ、その製造方法および半導体装置の製造方法
KR101104492B1 (ko) * 2009-04-28 2012-01-12 삼성전자주식회사 단결정 기판 제조방법 및 그에 의해 제조된 단결정 기판 평가를 위한 열처리 방법
WO2011052787A1 (ja) 2009-11-02 2011-05-05 富士電機システムズ株式会社 半導体装置および半導体装置の製造方法
JP5644096B2 (ja) 2009-11-30 2014-12-24 ソニー株式会社 接合基板の製造方法及び固体撮像装置の製造方法
US20110174362A1 (en) 2010-01-18 2011-07-21 Applied Materials, Inc. Manufacture of thin film solar cells with high conversion efficiency
US9099526B2 (en) 2010-02-16 2015-08-04 Monolithic 3D Inc. Integrated circuit device and structure
US8859393B2 (en) 2010-06-30 2014-10-14 Sunedison Semiconductor Limited Methods for in-situ passivation of silicon-on-insulator wafers
JP5439305B2 (ja) * 2010-07-14 2014-03-12 信越半導体株式会社 シリコン基板の製造方法及びシリコン基板
US9433753B2 (en) 2010-07-16 2016-09-06 Barbara R. Holliday Medical tubing stabilizer
US8642416B2 (en) 2010-07-30 2014-02-04 Monolithic 3D Inc. Method of forming three dimensional integrated circuit devices using layer transfer technique
JP5627649B2 (ja) 2010-09-07 2014-11-19 株式会社東芝 窒化物半導体結晶層の製造方法
JP5117588B2 (ja) 2010-09-07 2013-01-16 株式会社東芝 窒化物半導体結晶層の製造方法
US8187945B2 (en) 2010-10-27 2012-05-29 Crossbar, Inc. Method for obtaining smooth, continuous silver film
FR2967812B1 (fr) 2010-11-19 2016-06-10 S O I Tec Silicon On Insulator Tech Dispositif electronique pour applications radiofrequence ou de puissance et procede de fabrication d'un tel dispositif
US9287353B2 (en) 2010-11-30 2016-03-15 Kyocera Corporation Composite substrate and method of manufacturing the same
KR101913322B1 (ko) 2010-12-24 2018-10-30 퀄컴 인코포레이티드 반도체 소자들을 위한 트랩 리치 층
US8481405B2 (en) 2010-12-24 2013-07-09 Io Semiconductor, Inc. Trap rich layer with through-silicon-vias in semiconductor devices
US8536021B2 (en) 2010-12-24 2013-09-17 Io Semiconductor, Inc. Trap rich layer formation techniques for semiconductor devices
US8796116B2 (en) 2011-01-31 2014-08-05 Sunedison Semiconductor Limited Methods for reducing the metal content in the device layer of SOI structures and SOI structures produced by such methods
US20120235283A1 (en) 2011-03-16 2012-09-20 Memc Electronic Materials, Inc. Silicon on insulator structures having high resistivity regions in the handle wafer
FR2973158B1 (fr) 2011-03-22 2014-02-28 Soitec Silicon On Insulator Procédé de fabrication d'un substrat de type semi-conducteur sur isolant pour applications radiofréquences
US9496255B2 (en) 2011-11-16 2016-11-15 Qualcomm Incorporated Stacked CMOS chipset having an insulating layer and a secondary layer and method of forming same
US8741739B2 (en) 2012-01-03 2014-06-03 International Business Machines Corporation High resistivity silicon-on-insulator substrate and method of forming
US20130193445A1 (en) 2012-01-26 2013-08-01 International Business Machines Corporation Soi structures including a buried boron nitride dielectric
US8921209B2 (en) 2012-09-12 2014-12-30 International Business Machines Corporation Defect free strained silicon on insulator (SSOI) substrates
US9202711B2 (en) 2013-03-14 2015-12-01 Sunedison Semiconductor Limited (Uen201334164H) Semiconductor-on-insulator wafer manufacturing method for reducing light point defects and surface roughness
US9634098B2 (en) * 2013-06-11 2017-04-25 SunEdison Semiconductor Ltd. (UEN201334164H) Oxygen precipitation in heavily doped silicon wafers sliced from ingots grown by the Czochralski method
US8951896B2 (en) 2013-06-28 2015-02-10 International Business Machines Corporation High linearity SOI wafer for low-distortion circuit applications
US9768056B2 (en) 2013-10-31 2017-09-19 Sunedison Semiconductor Limited (Uen201334164H) Method of manufacturing high resistivity SOI wafers with charge trapping layers based on terminated Si deposition
JP6118765B2 (ja) * 2014-07-03 2017-04-19 信越半導体株式会社 シリコン単結晶ウェーハの熱処理方法
KR102306730B1 (ko) * 2016-12-28 2021-09-30 썬에디슨 세미컨덕터 리미티드 고유 게터링 및 게이트 산화물 무결성 수율을 갖도록 규소 웨이퍼들을 처리하는 방법

Similar Documents

Publication Publication Date Title
JP2020504069A5 (enExample)
US10453703B2 (en) Method of treating silicon wafers to have intrinsic gettering and gate oxide integrity yield
TW200926303A (en) Semiconductor device manufacturing method and semiconductor device
TW201007865A (en) Silicon single crystal wafer, process for producing silicon single crystal wafer, and method for evaluating silicon single crystal wafer
US10483128B2 (en) Epitaxially coated semiconductor wafer, and method for producing an epitaxially coated semiconductor wafer
KR102173455B1 (ko) 접합 soi웨이퍼의 제조방법
TWI578400B (zh) Silicon wafer heat treatment method
JP6160616B2 (ja) Ｓｏｓ基板の製造方法及びｓｏｓ基板
JP6245156B2 (ja) シリコンウェーハの評価方法
US10361114B2 (en) Method for preparing substrate with carrier trapping center
CN104425215B (zh) SiC半导体装置的制造方法
JP2010034330A (ja) エピタキシャルウェーハおよびその製造方法
US20200168501A1 (en) Method for planarizing wafer surface
JP6268676B2 (ja) 電極の形成方法
JP2007281119A5 (enExample)
TWI726344B (zh) 磊晶矽晶圓的製造方法及磊晶矽晶圓
CN117228641B (zh) 一种补偿氮空位并抑制漏电流的氮化物铁电薄膜的制备方法
JP6817545B2 (ja) シリコン中の炭素測定方法
TW202041726A (zh) 矽單晶晶圓之製造方法及矽單晶晶圓
JP2007176725A (ja) 中性子照射シリコン単結晶の製造方法
KR20190015301A (ko) 실리콘 웨이퍼의 열처리 방법
JP6822375B2 (ja) シリコンエピタキシャルウエーハの製造方法
US9478424B2 (en) Method for fabricating an improved GAN-based semiconductor layer
JP2011071254A (ja) 炭化珪素基板およびその製造方法
JP4660068B2 (ja) シリコン単結晶基板