JP7110204B2 - イントリンシックゲッタリングおよびゲート酸化物完全性歩留まりを有するシリコンウエハを処理する方法 - Google Patents

イントリンシックゲッタリングおよびゲート酸化物完全性歩留まりを有するシリコンウエハを処理する方法 Download PDF

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JP7110204B2
JP7110204B2 JP2019535384A JP2019535384A JP7110204B2 JP 7110204 B2 JP7110204 B2 JP 7110204B2 JP 2019535384 A JP2019535384 A JP 2019535384A JP 2019535384 A JP2019535384 A JP 2019535384A JP 7110204 B2 JP7110204 B2 JP 7110204B2
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oxygen
atmosphere
silicon wafer
single crystal
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JP2020504069A5 (enExample
JP2020504069A (ja
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イ・ヨンジュン
リュ・ジェウ
キム・ビョンチュン
ロバート・ジェイ・フォルスター
パク・スンソン
キム・テフン
チ・ジュンファン
カリシマ・マリー・ハドソン
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SunEdison Semiconductor Ltd
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JP2019535384A 2016-12-28 2017-12-13 イントリンシックゲッタリングおよびゲート酸化物完全性歩留まりを有するシリコンウエハを処理する方法 Active JP7110204B2 (ja)

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US201662439621P 2016-12-28 2016-12-28
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PCT/US2017/066063 WO2018125565A1 (en) 2016-12-28 2017-12-13 Method of treating silicon wafers to have intrinsic gettering and gate oxide integrity yield

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JP7388434B2 (ja) * 2019-04-16 2023-11-29 信越半導体株式会社 シリコン単結晶ウェーハの製造方法及びシリコン単結晶ウェーハ
JP7251616B2 (ja) * 2019-04-26 2023-04-04 富士電機株式会社 半導体装置および製造方法
CN114631193A (zh) * 2019-08-09 2022-06-14 尖端设备技术公司 具有低氧浓度区域的晶片
US11742203B2 (en) * 2020-02-26 2023-08-29 The Hong Kong University Of Science And Technology Method for growing III-V compound semiconductor thin films on silicon-on-insulators
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TWI768957B (zh) * 2021-06-08 2022-06-21 合晶科技股份有限公司 複合基板及其製造方法
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TWI865954B (zh) * 2021-11-04 2024-12-11 日商Ｓｕｍｃｏ股份有限公司 矽晶圓及磊晶矽晶圓
JP7658332B2 (ja) * 2021-11-04 2025-04-08 株式会社Sumco シリコンウェーハおよびエピタキシャルシリコンウェーハ
TWI854344B (zh) * 2021-11-04 2024-09-01 日商Ｓｕｍｃｏ股份有限公司 矽晶圓及磊晶矽晶圓
CN116259538B (zh) * 2023-03-30 2023-11-17 苏州龙驰半导体科技有限公司 提高SiC材料栅氧界面态质量的方法及其应用

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