SG10201913071XA - Method of treating silicon wafers to have intrinsic gettering and gate oxide integrity yield - Google Patents

Method of treating silicon wafers to have intrinsic gettering and gate oxide integrity yield

Info

Publication number
SG10201913071XA
SG10201913071XA SG10201913071XA SG10201913071XA SG10201913071XA SG 10201913071X A SG10201913071X A SG 10201913071XA SG 10201913071X A SG10201913071X A SG 10201913071XA SG 10201913071X A SG10201913071X A SG 10201913071XA SG 10201913071X A SG10201913071X A SG 10201913071XA
Authority
SG
Singapore
Prior art keywords
gate oxide
silicon wafers
intrinsic gettering
oxide integrity
treating silicon
Prior art date
Application number
SG10201913071XA
Other languages
English (en)
Inventor
Young Jung Lee
Jae-Woo Ryu
Byung Chun Kim
Robert J Falster
Soon Sung Park
Tae Hoon Kim
Jun Hwan Ji
Carissima Marie Hudson
Original Assignee
Sunedison Semiconductor Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sunedison Semiconductor Ltd filed Critical Sunedison Semiconductor Ltd
Publication of SG10201913071XA publication Critical patent/SG10201913071XA/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P36/00—Gettering within semiconductor bodies
    • H10P36/20—Intrinsic gettering, i.e. thermally inducing defects by using oxygen present in the silicon body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P36/00—Gettering within semiconductor bodies
    • H10P36/03—Gettering within semiconductor bodies within silicon bodies
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/005—Oxydation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02—Heat treatment
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/08—Etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3458—Monocrystalline
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
SG10201913071XA 2016-12-28 2017-12-13 Method of treating silicon wafers to have intrinsic gettering and gate oxide integrity yield SG10201913071XA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US201662439621P 2016-12-28 2016-12-28

Publications (1)

Publication Number Publication Date
SG10201913071XA true SG10201913071XA (en) 2020-03-30

Family

ID=61017987

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201913071XA SG10201913071XA (en) 2016-12-28 2017-12-13 Method of treating silicon wafers to have intrinsic gettering and gate oxide integrity yield

Country Status (8)

Country Link
US (2) US10453703B2 (enExample)
EP (2) EP3562978B1 (enExample)
JP (2) JP7110204B2 (enExample)
KR (2) KR102306730B1 (enExample)
CN (2) CN110799678B (enExample)
SG (1) SG10201913071XA (enExample)
TW (2) TWI724266B (enExample)
WO (1) WO2018125565A1 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6447439B2 (ja) * 2015-09-28 2019-01-09 信越半導体株式会社 貼り合わせｓｏｉウェーハの製造方法
EP3562978B1 (en) * 2016-12-28 2021-03-10 Sunedison Semiconductor Limited Method of treating silicon wafers to have intrinsic gettering and gate oxide integrity yield
DE102017219255A1 (de) * 2017-10-26 2019-05-02 Siltronic Ag Halbleiterscheibe aus einkristallinem Silizium
CN108961218B (zh) * 2018-06-11 2021-07-02 无锡维胜威信息科技有限公司 太阳能硅片晶花提取方法
US10943813B2 (en) * 2018-07-13 2021-03-09 Globalwafers Co., Ltd. Radio frequency silicon on insulator wafer platform with superior performance, stability, and manufacturability
WO2020213230A1 (ja) * 2019-04-16 2020-10-22 信越半導体株式会社 シリコン単結晶ウェーハの製造方法及びシリコン単結晶ウェーハ
EP3842574B1 (en) * 2019-04-26 2024-03-27 Fuji Electric Co., Ltd. Semiconductor device and manufacturing method
US12359343B2 (en) * 2019-08-09 2025-07-15 Blue Origin Manufacturing, LLC Wafer with regions of low oxygen concentration
US11742203B2 (en) * 2020-02-26 2023-08-29 The Hong Kong University Of Science And Technology Method for growing III-V compound semiconductor thin films on silicon-on-insulators
US11695048B2 (en) * 2020-04-09 2023-07-04 Sumco Corporation Silicon wafer and manufacturing method of the same
TWI768957B (zh) * 2021-06-08 2022-06-21 合晶科技股份有限公司 複合基板及其製造方法
CN113793800B (zh) * 2021-08-18 2024-04-09 万华化学集团电子材料有限公司 一种半导体单晶硅片的除杂工艺及制造工艺
TWI865954B (zh) * 2021-11-04 2024-12-11 日商Ｓｕｍｃｏ股份有限公司 矽晶圓及磊晶矽晶圓
TWI854344B (zh) * 2021-11-04 2024-09-01 日商Ｓｕｍｃｏ股份有限公司 矽晶圓及磊晶矽晶圓
JP7658332B2 (ja) * 2021-11-04 2025-04-08 株式会社Sumco シリコンウェーハおよびエピタキシャルシリコンウェーハ
JP7694487B2 (ja) * 2022-07-08 2025-06-18 株式会社Sumco シリコンウェーハ及びその製造方法
CN116259538B (zh) * 2023-03-30 2023-11-17 苏州龙驰半导体科技有限公司 提高SiC材料栅氧界面态质量的方法及其应用

Family Cites Families (80)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4501060A (en) 1983-01-24 1985-02-26 At&T Bell Laboratories Dielectrically isolated semiconductor devices
US4755865A (en) 1986-01-21 1988-07-05 Motorola Inc. Means for stabilizing polycrystalline semiconductor layers
JPH06105691B2 (ja) 1988-09-29 1994-12-21 株式会社富士電機総合研究所 炭素添加非晶質シリコン薄膜の製造方法
JP2617798B2 (ja) 1989-09-22 1997-06-04 三菱電機株式会社 積層型半導体装置およびその製造方法
US5024723A (en) 1990-05-07 1991-06-18 Goesele Ulrich M Method of producing a thin silicon on insulator layer by wafer bonding and chemical thinning
IT1242014B (it) * 1990-11-15 1994-02-02 Memc Electronic Materials Procedimento per il trattamento di fette di silicio per ottenere in esse profili di precipitazione controllati per la produzione di componenti elettronici.
FR2681472B1 (fr) 1991-09-18 1993-10-29 Commissariat Energie Atomique Procede de fabrication de films minces de materiau semiconducteur.
JPH07106512A (ja) 1993-10-04 1995-04-21 Sharp Corp 分子イオン注入を用いたｓｉｍｏｘ処理方法
US6043138A (en) 1996-09-16 2000-03-28 Advanced Micro Devices, Inc. Multi-step polysilicon deposition process for boron penetration inhibition
US5783469A (en) 1996-12-10 1998-07-21 Advanced Micro Devices, Inc. Method for making nitrogenated gate structure for improved transistor performance
US5994761A (en) 1997-02-26 1999-11-30 Memc Electronic Materials Spa Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-less process therefor
US6068928A (en) 1998-02-25 2000-05-30 Siemens Aktiengesellschaft Method for producing a polycrystalline silicon structure and polycrystalline silicon layer to be produced by the method
TW589415B (en) 1998-03-09 2004-06-01 Shinetsu Handotai Kk Method for producing silicon single crystal wafer and silicon single crystal wafer
EP1624482B1 (en) * 1998-09-02 2009-07-29 MEMC Electronic Materials, Inc. Thermally annealed silicon wafers having improved intrinsic gettering
DE69941196D1 (de) * 1998-09-02 2009-09-10 Memc Electronic Materials Wärmebehandelte Siliziumscheiben mit verbesserter Eigengetterung
EP1110240B1 (en) 1998-09-02 2006-10-25 MEMC Electronic Materials, Inc. Process for preparing an ideal oxygen precipitating silicon wafer
JP4313874B2 (ja) 1999-02-02 2009-08-12 キヤノン株式会社 基板の製造方法
US6346459B1 (en) 1999-02-05 2002-02-12 Silicon Wafer Technologies, Inc. Process for lift off and transfer of semiconductor devices onto an alien substrate
KR100378184B1 (ko) * 1999-11-13 2003-03-29 삼성전자주식회사 제어된 결함 분포를 갖는 실리콘 웨이퍼, 그의 제조공정및 단결정 실리콘 잉곳의 제조를 위한 초크랄스키 풀러
US20020090758A1 (en) 2000-09-19 2002-07-11 Silicon Genesis Corporation Method and resulting device for manufacturing for double gated transistors
JP2004537161A (ja) * 2001-04-11 2004-12-09 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド 高抵抗率ｃｚシリコンにおけるサーマルドナー生成の制御
US6562127B1 (en) 2002-01-16 2003-05-13 The United States Of America As Represented By The Secretary Of The Navy Method of making mosaic array of thin semiconductor material of large substrates
CN1324664C (zh) * 2002-04-10 2007-07-04 Memc电子材料有限公司 用于控制理想氧沉淀硅片中洁净区深度的方法
US7074623B2 (en) 2002-06-07 2006-07-11 Amberwave Systems Corporation Methods of forming strained-semiconductor-on-insulator finFET device structures
US6995430B2 (en) 2002-06-07 2006-02-07 Amberwave Systems Corporation Strained-semiconductor-on-insulator device structures
US7057234B2 (en) 2002-12-06 2006-06-06 Cornell Research Foundation, Inc. Scalable nano-transistor and memory using back-side trapping
DE10334954A1 (de) 2003-07-31 2005-02-24 Voith Turbo Gmbh & Co. Kg Hydropumpe
KR100531552B1 (ko) 2003-09-05 2005-11-28 주식회사 하이닉스반도체 실리콘 웨이퍼 및 그 제조방법
US20070032040A1 (en) 2003-09-26 2007-02-08 Dimitri Lederer Method of manufacturing a multilayer semiconductor structure with reduced ohmic losses
US6992025B2 (en) 2004-01-12 2006-01-31 Sharp Laboratories Of America, Inc. Strained silicon on insulator from film transfer and relaxation by hydrogen implantation
JP2005223293A (ja) 2004-02-09 2005-08-18 Sumitomo Mitsubishi Silicon Corp シリコンウェーハの熱処理方法およびシリコンウェーハ
JP4794137B2 (ja) 2004-04-23 2011-10-19 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 シリコン半導体基板の熱処理方法
US7279400B2 (en) 2004-08-05 2007-10-09 Sharp Laboratories Of America, Inc. Method of fabricating single-layer and multi-layer single crystalline silicon and silicon devices on plastic using sacrificial glass
US7312487B2 (en) 2004-08-16 2007-12-25 International Business Machines Corporation Three dimensional integrated circuit
US7476594B2 (en) 2005-03-30 2009-01-13 Cree, Inc. Methods of fabricating silicon nitride regions in silicon carbide and resulting structures
DE102005028202B4 (de) 2005-06-17 2010-04-15 Siltronic Ag Verfahren zur Herstellung von Halbleiterscheiben aus Silizium
FR2890489B1 (fr) 2005-09-08 2008-03-07 Soitec Silicon On Insulator Procede de fabrication d'une heterostructure de type semi-conducteur sur isolant
JP2008016652A (ja) 2006-07-06 2008-01-24 Shin Etsu Handotai Co Ltd シリコンウェーハの製造方法
JP5167654B2 (ja) * 2007-02-26 2013-03-21 信越半導体株式会社 シリコン単結晶ウエーハの製造方法
JP4445524B2 (ja) 2007-06-26 2010-04-07 株式会社東芝 半導体記憶装置の製造方法
JP2009016692A (ja) 2007-07-06 2009-01-22 Toshiba Corp 半導体記憶装置の製造方法と半導体記憶装置
US7915706B1 (en) 2007-07-09 2011-03-29 Rf Micro Devices, Inc. Linearity improvements of semiconductor substrate using passivation
US7879699B2 (en) 2007-09-28 2011-02-01 Infineon Technologies Ag Wafer and a method for manufacturing a wafer
US8128749B2 (en) 2007-10-04 2012-03-06 International Business Machines Corporation Fabrication of SOI with gettering layer
US7868419B1 (en) 2007-10-18 2011-01-11 Rf Micro Devices, Inc. Linearity improvements of semiconductor substrate based radio frequency devices
US20090236689A1 (en) 2008-03-24 2009-09-24 Freescale Semiconductor, Inc. Integrated passive device and method with low cost substrate
FR2933234B1 (fr) 2008-06-30 2016-09-23 S O I Tec Silicon On Insulator Tech Substrat bon marche a structure double et procede de fabrication associe
JP2009177194A (ja) 2009-03-19 2009-08-06 Sumco Corp シリコンウェーハの製造方法、シリコンウェーハ
US8058137B1 (en) 2009-04-14 2011-11-15 Monolithic 3D Inc. Method for fabrication of a semiconductor device and structure
JP2010258083A (ja) 2009-04-22 2010-11-11 Panasonic Corp Ｓｏｉウェーハ、その製造方法および半導体装置の製造方法
KR101104492B1 (ko) * 2009-04-28 2012-01-12 삼성전자주식회사 단결정 기판 제조방법 및 그에 의해 제조된 단결정 기판 평가를 위한 열처리 방법
DE112010004241B4 (de) 2009-11-02 2022-09-01 Fuji Electric Co., Ltd. Halbleiterbauelemente und Verfahren zur Herstellung von Halbleiterbauelementen
JP5644096B2 (ja) 2009-11-30 2014-12-24 ソニー株式会社 接合基板の製造方法及び固体撮像装置の製造方法
US20110174362A1 (en) 2010-01-18 2011-07-21 Applied Materials, Inc. Manufacture of thin film solar cells with high conversion efficiency
US9099526B2 (en) 2010-02-16 2015-08-04 Monolithic 3D Inc. Integrated circuit device and structure
US8859393B2 (en) 2010-06-30 2014-10-14 Sunedison Semiconductor Limited Methods for in-situ passivation of silicon-on-insulator wafers
JP5439305B2 (ja) * 2010-07-14 2014-03-12 信越半導体株式会社 シリコン基板の製造方法及びシリコン基板
US9433753B2 (en) 2010-07-16 2016-09-06 Barbara R. Holliday Medical tubing stabilizer
US8642416B2 (en) 2010-07-30 2014-02-04 Monolithic 3D Inc. Method of forming three dimensional integrated circuit devices using layer transfer technique
JP5117588B2 (ja) 2010-09-07 2013-01-16 株式会社東芝 窒化物半導体結晶層の製造方法
JP5627649B2 (ja) 2010-09-07 2014-11-19 株式会社東芝 窒化物半導体結晶層の製造方法
US8187945B2 (en) 2010-10-27 2012-05-29 Crossbar, Inc. Method for obtaining smooth, continuous silver film
FR2967812B1 (fr) 2010-11-19 2016-06-10 S O I Tec Silicon On Insulator Tech Dispositif electronique pour applications radiofrequence ou de puissance et procede de fabrication d'un tel dispositif
US9287353B2 (en) 2010-11-30 2016-03-15 Kyocera Corporation Composite substrate and method of manufacturing the same
US8536021B2 (en) 2010-12-24 2013-09-17 Io Semiconductor, Inc. Trap rich layer formation techniques for semiconductor devices
US8481405B2 (en) 2010-12-24 2013-07-09 Io Semiconductor, Inc. Trap rich layer with through-silicon-vias in semiconductor devices
JP6004285B2 (ja) 2010-12-24 2016-10-05 クォルコム・インコーポレイテッド 半導体デバイスのためのトラップリッチ層
US8796116B2 (en) 2011-01-31 2014-08-05 Sunedison Semiconductor Limited Methods for reducing the metal content in the device layer of SOI structures and SOI structures produced by such methods
JP6228462B2 (ja) 2011-03-16 2017-11-08 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッドＭｅｍｃ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ ハンドルウエハ内に高抵抗率領域を有するシリコン・オン・インシュレータ構造体およびそのような構造体の製法
FR2973158B1 (fr) 2011-03-22 2014-02-28 Soitec Silicon On Insulator Procédé de fabrication d'un substrat de type semi-conducteur sur isolant pour applications radiofréquences
US9496255B2 (en) 2011-11-16 2016-11-15 Qualcomm Incorporated Stacked CMOS chipset having an insulating layer and a secondary layer and method of forming same
US8741739B2 (en) 2012-01-03 2014-06-03 International Business Machines Corporation High resistivity silicon-on-insulator substrate and method of forming
US20130193445A1 (en) 2012-01-26 2013-08-01 International Business Machines Corporation Soi structures including a buried boron nitride dielectric
US8921209B2 (en) 2012-09-12 2014-12-30 International Business Machines Corporation Defect free strained silicon on insulator (SSOI) substrates
US9202711B2 (en) 2013-03-14 2015-12-01 Sunedison Semiconductor Limited (Uen201334164H) Semiconductor-on-insulator wafer manufacturing method for reducing light point defects and surface roughness
US9634098B2 (en) * 2013-06-11 2017-04-25 SunEdison Semiconductor Ltd. (UEN201334164H) Oxygen precipitation in heavily doped silicon wafers sliced from ingots grown by the Czochralski method
US8951896B2 (en) 2013-06-28 2015-02-10 International Business Machines Corporation High linearity SOI wafer for low-distortion circuit applications
US9768056B2 (en) 2013-10-31 2017-09-19 Sunedison Semiconductor Limited (Uen201334164H) Method of manufacturing high resistivity SOI wafers with charge trapping layers based on terminated Si deposition
JP6118765B2 (ja) * 2014-07-03 2017-04-19 信越半導体株式会社 シリコン単結晶ウェーハの熱処理方法
EP3562978B1 (en) * 2016-12-28 2021-03-10 Sunedison Semiconductor Limited Method of treating silicon wafers to have intrinsic gettering and gate oxide integrity yield

Also Published As

Publication number Publication date
TW202129094A (zh) 2021-08-01
JP2022169511A (ja) 2022-11-09
EP3562978A1 (en) 2019-11-06
KR20210122867A (ko) 2021-10-12
EP3653761B1 (en) 2024-02-28
KR20190101414A (ko) 2019-08-30
TWI724266B (zh) 2021-04-11
CN114093764A (zh) 2022-02-25
TWI764661B (zh) 2022-05-11
CN114093764B (zh) 2025-07-22
JP7541551B2 (ja) 2024-08-28
CN110799678A (zh) 2020-02-14
KR102306730B1 (ko) 2021-09-30
CN110799678B (zh) 2021-11-26
JP2020504069A (ja) 2020-02-06
WO2018125565A1 (en) 2018-07-05
KR102453743B1 (ko) 2022-10-11
US10453703B2 (en) 2019-10-22
US20180182641A1 (en) 2018-06-28
US20190267251A1 (en) 2019-08-29
US10707093B2 (en) 2020-07-07
EP3562978B1 (en) 2021-03-10
TW201840920A (zh) 2018-11-16
EP3653761A1 (en) 2020-05-20
JP7110204B2 (ja) 2022-08-01

Similar Documents

Publication Publication Date Title
SG10201913071XA (en) Method of treating silicon wafers to have intrinsic gettering and gate oxide integrity yield
SG10201506143RA (en) Semiconductor device and method of forming double-sidedfan-out wafer level package
TWI560817B (en) Semiconductor device having recessed edges and method of manufacture
SG10202005212QA (en) Composition for etching and method for manufacturing semiconductor device using same
SG11201509734YA (en) Semiconductor wafer protective film and method of manufacturing semiconductor device
ZA201801266B (en) Composition and method for treatment and prophylaxis of intestinal infection and inflammation
SG2013056395A (en) Semiconductor wafer composed of monocrystalline silicon and method for producing it
TWI560764B (en) Pick up device and pick up method of semiconductor die
SG10201605337UA (en) Manufacturing method of semiconductor device
SG10201707397YA (en) Method of manufacturing semiconductor device, substrate processing apparatus, and program
SG11201700608XA (en) Final polishing method of silicon wafer and silicon wafer
GB2551732B (en) Method of processing wafer
SG11201808206WA (en) Substrate processing apparatus, method of manufacturing semiconductor device, and program
SG10201706633YA (en) Wafer and method of processing wafer
GB2540969B (en) Method of doping an organic semiconductor and doping composition
EP3533760A4 (en) PYROGENATED SILICA AND ITS PRODUCTION METHOD
SG11202012288PA (en) Semiconductor device and method of manufacturing same
EP3117460A4 (en) Structure and method of packaged semiconductor devices
SG11201708416PA (en) Silicon epitaxial wafer and method of producing same
SG10201700762PA (en) Semiconductor package and method of manufacturing semiconductor package
GB2562918B (en) Semiconductor device and method of manufacturing semiconductor device
SG10201503181VA (en) Semiconductor Wafer Composed Of Silicon And Method For Producing Same
GB2542316B (en) Manufacturing method and structure of oxide semiconductor TFT substrate
EP3164887A4 (en) Structure and method of batch-packaging low pin count embedded semiconductor chips
TWI560827B (en) Semiconductor package and its carrier structure and method of manufacture