TWI724266B - 處理矽晶圓以具有內部去疵及閘極氧化物完整性良率之方法 - Google Patents

處理矽晶圓以具有內部去疵及閘極氧化物完整性良率之方法 Download PDF

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TWI724266B
TWI724266B TW106145848A TW106145848A TWI724266B TW I724266 B TWI724266 B TW I724266B TW 106145848 A TW106145848 A TW 106145848A TW 106145848 A TW106145848 A TW 106145848A TW I724266 B TWI724266 B TW I724266B
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wafer
silicon wafer
single crystal
crystal silicon
front surface
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TW201840920A (zh
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李榮中
在祐 柳
金昞天
羅伯特 J 法斯特
淳成 朴
泰勳 金
池浚煥
卡瑞喜瑪 瑪莉 哈德森
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新加坡商太陽愛迪生半導體有限公司
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TW106145848A 2016-12-28 2017-12-27 處理矽晶圓以具有內部去疵及閘極氧化物完整性良率之方法 TWI724266B (zh)

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US62/439,621 2016-12-28

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TW110112520A TWI764661B (zh) 2016-12-28 2017-12-27 處理矽晶圓以具有內部去疵及閘極氧化物完整性良率之方法

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JP6447439B2 (ja) * 2015-09-28 2019-01-09 信越半導体株式会社 貼り合わせｓｏｉウェーハの製造方法
KR102306730B1 (ko) * 2016-12-28 2021-09-30 썬에디슨 세미컨덕터 리미티드 고유 게터링 및 게이트 산화물 무결성 수율을 갖도록 규소 웨이퍼들을 처리하는 방법
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CN108961218B (zh) * 2018-06-11 2021-07-02 无锡维胜威信息科技有限公司 太阳能硅片晶花提取方法
US10943813B2 (en) * 2018-07-13 2021-03-09 Globalwafers Co., Ltd. Radio frequency silicon on insulator wafer platform with superior performance, stability, and manufacturability
JP7388434B2 (ja) * 2019-04-16 2023-11-29 信越半導体株式会社 シリコン単結晶ウェーハの製造方法及びシリコン単結晶ウェーハ
JP7251616B2 (ja) * 2019-04-26 2023-04-04 富士電機株式会社 半導体装置および製造方法
CN114631193A (zh) * 2019-08-09 2022-06-14 尖端设备技术公司 具有低氧浓度区域的晶片
US11742203B2 (en) * 2020-02-26 2023-08-29 The Hong Kong University Of Science And Technology Method for growing III-V compound semiconductor thin films on silicon-on-insulators
US11695048B2 (en) * 2020-04-09 2023-07-04 Sumco Corporation Silicon wafer and manufacturing method of the same
TWI768957B (zh) * 2021-06-08 2022-06-21 合晶科技股份有限公司 複合基板及其製造方法
CN113793800B (zh) * 2021-08-18 2024-04-09 万华化学集团电子材料有限公司 一种半导体单晶硅片的除杂工艺及制造工艺
TWI865954B (zh) * 2021-11-04 2024-12-11 日商Ｓｕｍｃｏ股份有限公司 矽晶圓及磊晶矽晶圓
JP7658332B2 (ja) * 2021-11-04 2025-04-08 株式会社Sumco シリコンウェーハおよびエピタキシャルシリコンウェーハ
TWI854344B (zh) * 2021-11-04 2024-09-01 日商Ｓｕｍｃｏ股份有限公司 矽晶圓及磊晶矽晶圓
CN116259538B (zh) * 2023-03-30 2023-11-17 苏州龙驰半导体科技有限公司 提高SiC材料栅氧界面态质量的方法及其应用

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