KR102306730B1 - 고유 게터링 및 게이트 산화물 무결성 수율을 갖도록 규소 웨이퍼들을 처리하는 방법 - Google Patents

고유 게터링 및 게이트 산화물 무결성 수율을 갖도록 규소 웨이퍼들을 처리하는 방법 Download PDF

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KR102306730B1
KR102306730B1 KR1020197021811A KR20197021811A KR102306730B1 KR 102306730 B1 KR102306730 B1 KR 102306730B1 KR 1020197021811 A KR1020197021811 A KR 1020197021811A KR 20197021811 A KR20197021811 A KR 20197021811A KR 102306730 B1 KR102306730 B1 KR 102306730B1
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micrometers
wafer
oxygen
silicon wafer
single crystal
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KR20190101414A (ko
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이영중
류재우
김병천
로버트 제이. 폴스터
박순성
김태훈
지준환
카리시마 마리 허드슨
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썬에디슨 세미컨덕터 리미티드
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KR1020197021811A 2016-12-28 2017-12-13 고유 게터링 및 게이트 산화물 무결성 수율을 갖도록 규소 웨이퍼들을 처리하는 방법 Active KR102306730B1 (ko)

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US201662439621P 2016-12-28 2016-12-28
US62/439,621 2016-12-28
PCT/US2017/066063 WO2018125565A1 (en) 2016-12-28 2017-12-13 Method of treating silicon wafers to have intrinsic gettering and gate oxide integrity yield

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KR20210122867A (ko) * 2016-12-28 2021-10-12 썬에디슨 세미컨덕터 리미티드 고유 게터링 및 게이트 산화물 무결성 수율을 갖도록 규소 웨이퍼들을 처리하는 방법

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US11742203B2 (en) * 2020-02-26 2023-08-29 The Hong Kong University Of Science And Technology Method for growing III-V compound semiconductor thin films on silicon-on-insulators
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TWI768957B (zh) 2021-06-08 2022-06-21 合晶科技股份有限公司 複合基板及其製造方法
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TWI854344B (zh) * 2021-11-04 2024-09-01 日商Ｓｕｍｃｏ股份有限公司 矽晶圓及磊晶矽晶圓
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CN116259538B (zh) * 2023-03-30 2023-11-17 苏州龙驰半导体科技有限公司 提高SiC材料栅氧界面态质量的方法及其应用

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