JP2020102629A5 - - Google Patents

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Publication number
JP2020102629A5
JP2020102629A5 JP2019231018A JP2019231018A JP2020102629A5 JP 2020102629 A5 JP2020102629 A5 JP 2020102629A5 JP 2019231018 A JP2019231018 A JP 2019231018A JP 2019231018 A JP2019231018 A JP 2019231018A JP 2020102629 A5 JP2020102629 A5 JP 2020102629A5
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JP
Japan
Prior art keywords
semiconductor device
layer
semiconductor
electrode
contact layer
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Application number
JP2019231018A
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English (en)
Japanese (ja)
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JP2020102629A (ja
JP7516040B2 (ja
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Publication of JP2020102629A publication Critical patent/JP2020102629A/ja
Publication of JP2020102629A5 publication Critical patent/JP2020102629A5/ja
Priority to JP2024107145A priority Critical patent/JP7708938B2/ja
Application granted granted Critical
Publication of JP7516040B2 publication Critical patent/JP7516040B2/ja
Priority to JP2025112755A priority patent/JP2025133859A/ja
Active legal-status Critical Current
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JP2019231018A 2018-12-24 2019-12-23 半導体素子 Active JP7516040B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2024107145A JP7708938B2 (ja) 2018-12-24 2024-07-03 半導体素子
JP2025112755A JP2025133859A (ja) 2018-12-24 2025-07-03 半導体素子

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
TW107146841 2018-12-24
TW107146841 2018-12-24

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2024107145A Division JP7708938B2 (ja) 2018-12-24 2024-07-03 半導体素子

Publications (3)

Publication Number Publication Date
JP2020102629A JP2020102629A (ja) 2020-07-02
JP2020102629A5 true JP2020102629A5 (enExample) 2022-12-16
JP7516040B2 JP7516040B2 (ja) 2024-07-16

Family

ID=71098914

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2019231018A Active JP7516040B2 (ja) 2018-12-24 2019-12-23 半導体素子
JP2024107145A Active JP7708938B2 (ja) 2018-12-24 2024-07-03 半導体素子
JP2025112755A Pending JP2025133859A (ja) 2018-12-24 2025-07-03 半導体素子

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2024107145A Active JP7708938B2 (ja) 2018-12-24 2024-07-03 半導体素子
JP2025112755A Pending JP2025133859A (ja) 2018-12-24 2025-07-03 半導体素子

Country Status (4)

Country Link
US (1) US11239388B2 (enExample)
JP (3) JP7516040B2 (enExample)
CN (2) CN111354842B (enExample)
TW (2) TWI894090B (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI830100B (zh) * 2021-12-13 2024-01-21 晶元光電股份有限公司 半導體光電元件
US20250048795A1 (en) * 2023-07-11 2025-02-06 Seoul Viosys Co., Ltd. Light emitting device and method of manufacturing the same
JP2025027704A (ja) * 2023-08-17 2025-02-28 ウシオ電機株式会社 赤外ｌｅｄ素子

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5048036A (en) 1989-09-18 1991-09-10 Spectra Diode Laboratories, Inc. Heterostructure laser with lattice mismatch
DE69312799T2 (de) * 1992-05-18 1998-02-12 Philips Electronics Nv Optoelektronische Halbleiteranordnung
JPH08102566A (ja) * 1994-09-30 1996-04-16 Nec Corp 量子井戸構造光半導体装置及びその製造方法
JPH08172241A (ja) * 1994-12-16 1996-07-02 Furukawa Electric Co Ltd:The ＡｌＧａＩｎＡｓ系多重量子井戸を有する半導体発光素子
JP2877107B2 (ja) * 1996-12-02 1999-03-31 日本電気株式会社 多重量子井戸型半導体レーザ
US6028875A (en) * 1996-10-11 2000-02-22 Nortel Networks Corporation Buried heterostructure laser with quaternary current blocking layer
JP2995187B1 (ja) * 1998-12-28 1999-12-27 日本学術振興会 半導体発光素子
JP4057802B2 (ja) 2001-09-05 2008-03-05 株式会社日立製作所 半導体光素子
US7335908B2 (en) * 2002-07-08 2008-02-26 Qunano Ab Nanostructures and methods for manufacturing the same
JP3872398B2 (ja) * 2002-08-07 2007-01-24 信越半導体株式会社 発光素子の製造方法及び発光素子
US6765238B2 (en) * 2002-09-12 2004-07-20 Agilent Technologies, Inc. Material systems for semiconductor tunnel-junction structures
US7126160B2 (en) * 2004-06-18 2006-10-24 3M Innovative Properties Company II-VI/III-V layered construction on InP substrate
JP4491610B2 (ja) * 2005-06-17 2010-06-30 国立大学法人 千葉大学 半導体機能素子
US20070238281A1 (en) * 2006-03-28 2007-10-11 Hudait Mantu K Depositing polar materials on non-polar semiconductor substrates
US7465954B2 (en) * 2006-04-28 2008-12-16 Hewlett-Packard Development Company, L.P. Nanowire devices and systems, light-emitting nanowires, and methods of precisely positioning nanoparticles
JP4985067B2 (ja) * 2007-04-11 2012-07-25 日立電線株式会社 半導体発光素子
US8183557B2 (en) * 2007-09-19 2012-05-22 The Regents Of The University Of California (Al,In,Ga,B)N device structures on a patterned substrate
US8642369B2 (en) * 2009-03-03 2014-02-04 Zn Technology, Inc. Vertically structured LED by integrating nitride semiconductors with Zn(Mg,Cd,Be)O(S,Se) and method for making same
JP2012175052A (ja) * 2011-02-24 2012-09-10 Stanley Electric Co Ltd 半導体発光装置の製造方法
JP5608589B2 (ja) * 2011-03-10 2014-10-15 スタンレー電気株式会社 半導体発光素子および半導体発光素子の製造方法
DE102011050450A1 (de) * 2011-05-18 2012-11-22 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip, optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements
JP2013030606A (ja) * 2011-07-28 2013-02-07 Hitachi Cable Ltd 半導体発光素子
CN103474530B (zh) * 2012-06-07 2016-06-08 清华大学 发光二极管
JP6024278B2 (ja) * 2012-08-10 2016-11-16 住友電気工業株式会社 発光素子
JP5957358B2 (ja) * 2012-10-16 2016-07-27 昭和電工株式会社 発光ダイオード、発光ダイオードランプ及び照明装置
CN104282813B (zh) * 2013-07-02 2018-04-06 晶元光电股份有限公司 发光元件
JP6257203B2 (ja) 2013-07-25 2018-01-10 晶元光電股▲ふん▼有限公司Ｅｐｉｓｔａｒ Ｃｏｒｐｏｒａｔｉｏｎ 発光素子
WO2016160319A1 (en) * 2015-04-02 2016-10-06 Applied Materials, Inc. Mocvd growth of highly mismatched iii-v cmos channel materials on silicon substrates
DE102015011635B4 (de) * 2015-09-11 2020-10-08 Azur Space Solar Power Gmbh lnfrarot-LED
JP6452651B2 (ja) 2016-06-30 2019-01-16 Ｄｏｗａエレクトロニクス株式会社 半導体光デバイスの製造方法および半導体光デバイス
KR101725783B1 (ko) * 2016-07-19 2017-04-11 고려대학교 산학협력단 광추출효율 향상을 위한 전극을 구비한 발광 다이오드 소자
US11056434B2 (en) * 2017-01-26 2021-07-06 Epistar Corporation Semiconductor device having specified p-type dopant concentration profile
JP6803411B2 (ja) * 2017-02-17 2020-12-23 Ｄｏｗａエレクトロニクス株式会社 深紫外発光素子およびその製造方法
WO2018160746A1 (en) * 2017-02-28 2018-09-07 University Of Iowa Research Foundation Cascaded broadband emission

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