CN111354842B - 半导体元件 - Google Patents

半导体元件 Download PDF

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Publication number
CN111354842B
CN111354842B CN201911334812.9A CN201911334812A CN111354842B CN 111354842 B CN111354842 B CN 111354842B CN 201911334812 A CN201911334812 A CN 201911334812A CN 111354842 B CN111354842 B CN 111354842B
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China
Prior art keywords
layer
contact layer
semiconductor
semiconductor device
lattice constant
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CN201911334812.9A
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English (en)
Chinese (zh)
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CN111354842A (zh
Inventor
陈孟扬
李荣仁
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Epistar Corp
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Epistar Corp
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Priority to CN202411187359.4A priority Critical patent/CN120224869A/zh
Publication of CN111354842A publication Critical patent/CN111354842A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H10H20/818—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous within the light-emitting regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/8215—Bodies characterised by crystalline imperfections, e.g. dislocations; characterised by the distribution of dopants, e.g. delta-doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/815—Bodies having stress relaxation structures, e.g. buffer layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/882—Scattering means

Landscapes

  • Led Devices (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Lasers (AREA)
CN201911334812.9A 2018-12-24 2019-12-23 半导体元件 Active CN111354842B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202411187359.4A CN120224869A (zh) 2018-12-24 2019-12-23 半导体元件

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
TW107146841 2018-12-24
TW107146841 2018-12-24

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN202411187359.4A Division CN120224869A (zh) 2018-12-24 2019-12-23 半导体元件

Publications (2)

Publication Number Publication Date
CN111354842A CN111354842A (zh) 2020-06-30
CN111354842B true CN111354842B (zh) 2024-09-13

Family

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CN202411187359.4A Pending CN120224869A (zh) 2018-12-24 2019-12-23 半导体元件

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN202411187359.4A Pending CN120224869A (zh) 2018-12-24 2019-12-23 半导体元件

Country Status (4)

Country Link
US (1) US11239388B2 (enExample)
JP (3) JP7516040B2 (enExample)
CN (2) CN111354842B (enExample)
TW (2) TWI894090B (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI830100B (zh) * 2021-12-13 2024-01-21 晶元光電股份有限公司 半導體光電元件
US20250048795A1 (en) * 2023-07-11 2025-02-06 Seoul Viosys Co., Ltd. Light emitting device and method of manufacturing the same
JP2025027704A (ja) * 2023-08-17 2025-02-28 ウシオ電機株式会社 赤外ｌｅｄ素子

Citations (2)

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JP2995187B1 (ja) * 1998-12-28 1999-12-27 日本学術振興会 半導体発光素子
CN108365062A (zh) * 2017-01-26 2018-08-03 晶元光电股份有限公司 半导体元件

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DE69312799T2 (de) * 1992-05-18 1998-02-12 Philips Electronics Nv Optoelektronische Halbleiteranordnung
JPH08102566A (ja) * 1994-09-30 1996-04-16 Nec Corp 量子井戸構造光半導体装置及びその製造方法
JPH08172241A (ja) * 1994-12-16 1996-07-02 Furukawa Electric Co Ltd:The ＡｌＧａＩｎＡｓ系多重量子井戸を有する半導体発光素子
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US7465954B2 (en) * 2006-04-28 2008-12-16 Hewlett-Packard Development Company, L.P. Nanowire devices and systems, light-emitting nanowires, and methods of precisely positioning nanoparticles
JP4985067B2 (ja) * 2007-04-11 2012-07-25 日立電線株式会社 半導体発光素子
US8183557B2 (en) * 2007-09-19 2012-05-22 The Regents Of The University Of California (Al,In,Ga,B)N device structures on a patterned substrate
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JP2012175052A (ja) * 2011-02-24 2012-09-10 Stanley Electric Co Ltd 半導体発光装置の製造方法
JP5608589B2 (ja) * 2011-03-10 2014-10-15 スタンレー電気株式会社 半導体発光素子および半導体発光素子の製造方法
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Also Published As

Publication number Publication date
US20200203570A1 (en) 2020-06-25
JP7708938B2 (ja) 2025-07-15
CN111354842A (zh) 2020-06-30
JP2020102629A (ja) 2020-07-02
CN120224869A (zh) 2025-06-27
JP2024133566A (ja) 2024-10-02
TW202038482A (zh) 2020-10-16
JP7516040B2 (ja) 2024-07-16
US11239388B2 (en) 2022-02-01
JP2025133859A (ja) 2025-09-11
TWI894090B (zh) 2025-08-11
TW202519083A (zh) 2025-05-01
TWI873109B (zh) 2025-02-21

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