TWI894090B - 半導體元件 - Google Patents

半導體元件

Info

Publication number
TWI894090B
TWI894090B TW114101845A TW114101845A TWI894090B TW I894090 B TWI894090 B TW I894090B TW 114101845 A TW114101845 A TW 114101845A TW 114101845 A TW114101845 A TW 114101845A TW I894090 B TWI894090 B TW I894090B
Authority
TW
Taiwan
Prior art keywords
layer
type semiconductor
semiconductor
semiconductor device
contact layer
Prior art date
Application number
TW114101845A
Other languages
English (en)
Chinese (zh)
Other versions
TW202519083A (zh
Inventor
陳孟揚
李榮仁
Original Assignee
晶元光電股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 晶元光電股份有限公司 filed Critical 晶元光電股份有限公司
Publication of TW202519083A publication Critical patent/TW202519083A/zh
Application granted granted Critical
Publication of TWI894090B publication Critical patent/TWI894090B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H10H20/818—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous within the light-emitting regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/8215—Bodies characterised by crystalline imperfections, e.g. dislocations; characterised by the distribution of dopants, e.g. delta-doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/815—Bodies having stress relaxation structures, e.g. buffer layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/882—Scattering means

Landscapes

  • Led Devices (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Lasers (AREA)
TW114101845A 2018-12-24 2019-12-23 半導體元件 TWI894090B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
TW107146841 2018-12-24
TW107146841 2018-12-24

Publications (2)

Publication Number Publication Date
TW202519083A TW202519083A (zh) 2025-05-01
TWI894090B true TWI894090B (zh) 2025-08-11

Family

ID=71098914

Family Applications (2)

Application Number Title Priority Date Filing Date
TW114101845A TWI894090B (zh) 2018-12-24 2019-12-23 半導體元件
TW108147163A TWI873109B (zh) 2018-12-24 2019-12-23 半導體元件

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW108147163A TWI873109B (zh) 2018-12-24 2019-12-23 半導體元件

Country Status (4)

Country Link
US (1) US11239388B2 (enExample)
JP (3) JP7516040B2 (enExample)
CN (2) CN111354842B (enExample)
TW (2) TWI894090B (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI830100B (zh) * 2021-12-13 2024-01-21 晶元光電股份有限公司 半導體光電元件
US20250048795A1 (en) * 2023-07-11 2025-02-06 Seoul Viosys Co., Ltd. Light emitting device and method of manufacturing the same
JP2025027704A (ja) * 2023-08-17 2025-02-28 ウシオ電機株式会社 赤外ｌｅｄ素子

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201503410A (zh) * 2013-07-02 2015-01-16 Epistar Corp 發光元件

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5048036A (en) 1989-09-18 1991-09-10 Spectra Diode Laboratories, Inc. Heterostructure laser with lattice mismatch
DE69312799T2 (de) * 1992-05-18 1998-02-12 Philips Electronics Nv Optoelektronische Halbleiteranordnung
JPH08102566A (ja) * 1994-09-30 1996-04-16 Nec Corp 量子井戸構造光半導体装置及びその製造方法
JPH08172241A (ja) * 1994-12-16 1996-07-02 Furukawa Electric Co Ltd:The ＡｌＧａＩｎＡｓ系多重量子井戸を有する半導体発光素子
JP2877107B2 (ja) * 1996-12-02 1999-03-31 日本電気株式会社 多重量子井戸型半導体レーザ
US6028875A (en) * 1996-10-11 2000-02-22 Nortel Networks Corporation Buried heterostructure laser with quaternary current blocking layer
JP2995187B1 (ja) * 1998-12-28 1999-12-27 日本学術振興会 半導体発光素子
JP4057802B2 (ja) 2001-09-05 2008-03-05 株式会社日立製作所 半導体光素子
US7335908B2 (en) * 2002-07-08 2008-02-26 Qunano Ab Nanostructures and methods for manufacturing the same
JP3872398B2 (ja) * 2002-08-07 2007-01-24 信越半導体株式会社 発光素子の製造方法及び発光素子
US6765238B2 (en) * 2002-09-12 2004-07-20 Agilent Technologies, Inc. Material systems for semiconductor tunnel-junction structures
US7126160B2 (en) * 2004-06-18 2006-10-24 3M Innovative Properties Company II-VI/III-V layered construction on InP substrate
JP4491610B2 (ja) * 2005-06-17 2010-06-30 国立大学法人 千葉大学 半導体機能素子
US20070238281A1 (en) * 2006-03-28 2007-10-11 Hudait Mantu K Depositing polar materials on non-polar semiconductor substrates
US7465954B2 (en) * 2006-04-28 2008-12-16 Hewlett-Packard Development Company, L.P. Nanowire devices and systems, light-emitting nanowires, and methods of precisely positioning nanoparticles
JP4985067B2 (ja) * 2007-04-11 2012-07-25 日立電線株式会社 半導体発光素子
US8183557B2 (en) * 2007-09-19 2012-05-22 The Regents Of The University Of California (Al,In,Ga,B)N device structures on a patterned substrate
US8642369B2 (en) * 2009-03-03 2014-02-04 Zn Technology, Inc. Vertically structured LED by integrating nitride semiconductors with Zn(Mg,Cd,Be)O(S,Se) and method for making same
JP2012175052A (ja) * 2011-02-24 2012-09-10 Stanley Electric Co Ltd 半導体発光装置の製造方法
JP5608589B2 (ja) * 2011-03-10 2014-10-15 スタンレー電気株式会社 半導体発光素子および半導体発光素子の製造方法
DE102011050450A1 (de) * 2011-05-18 2012-11-22 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip, optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements
JP2013030606A (ja) * 2011-07-28 2013-02-07 Hitachi Cable Ltd 半導体発光素子
CN103474530B (zh) * 2012-06-07 2016-06-08 清华大学 发光二极管
JP6024278B2 (ja) * 2012-08-10 2016-11-16 住友電気工業株式会社 発光素子
JP5957358B2 (ja) * 2012-10-16 2016-07-27 昭和電工株式会社 発光ダイオード、発光ダイオードランプ及び照明装置
JP6257203B2 (ja) 2013-07-25 2018-01-10 晶元光電股▲ふん▼有限公司Ｅｐｉｓｔａｒ Ｃｏｒｐｏｒａｔｉｏｎ 発光素子
WO2016160319A1 (en) * 2015-04-02 2016-10-06 Applied Materials, Inc. Mocvd growth of highly mismatched iii-v cmos channel materials on silicon substrates
DE102015011635B4 (de) * 2015-09-11 2020-10-08 Azur Space Solar Power Gmbh lnfrarot-LED
JP6452651B2 (ja) 2016-06-30 2019-01-16 Ｄｏｗａエレクトロニクス株式会社 半導体光デバイスの製造方法および半導体光デバイス
KR101725783B1 (ko) * 2016-07-19 2017-04-11 고려대학교 산학협력단 광추출효율 향상을 위한 전극을 구비한 발광 다이오드 소자
US11056434B2 (en) * 2017-01-26 2021-07-06 Epistar Corporation Semiconductor device having specified p-type dopant concentration profile
JP6803411B2 (ja) * 2017-02-17 2020-12-23 Ｄｏｗａエレクトロニクス株式会社 深紫外発光素子およびその製造方法
WO2018160746A1 (en) * 2017-02-28 2018-09-07 University Of Iowa Research Foundation Cascaded broadband emission

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201503410A (zh) * 2013-07-02 2015-01-16 Epistar Corp 發光元件

Also Published As

Publication number Publication date
US20200203570A1 (en) 2020-06-25
JP7708938B2 (ja) 2025-07-15
CN111354842A (zh) 2020-06-30
JP2020102629A (ja) 2020-07-02
CN120224869A (zh) 2025-06-27
JP2024133566A (ja) 2024-10-02
TW202038482A (zh) 2020-10-16
JP7516040B2 (ja) 2024-07-16
US11239388B2 (en) 2022-02-01
JP2025133859A (ja) 2025-09-11
CN111354842B (zh) 2024-09-13
TW202519083A (zh) 2025-05-01
TWI873109B (zh) 2025-02-21

Similar Documents

Publication Publication Date Title
JP7708938B2 (ja) 半導体素子
US9508891B2 (en) Method for making light-emitting device
TWI786248B (zh) 發光元件
TW202306196A (zh) 半導體元件
TWI850376B (zh) 半導體元件
KR20090115322A (ko) 그룹 3족 질화물계 반도체 소자
US20250040294A1 (en) Semiconductor device
TWI785930B (zh) 光電半導體裝置
KR101459770B1 (ko) 그룹 3족 질화물계 반도체 소자
TW202543458A (zh) 半導體元件
CN217740551U (zh) 半导体元件
TWI752295B (zh) 光電半導體裝置
TWI823136B (zh) 半導體元件
US20240079524A1 (en) Semiconductor device
CN111384152B (zh) 半导体元件
TWI823644B (zh) 光電半導體裝置
CN121013518A (zh) 半导体元件
KR20090115830A (ko) 수직구조의 그룹 3족 질화물계 반도체 발광다이오드 소자및 제조방법