JP2020015873A - 半導体封止用樹脂組成物、半導体装置、及び半導体装置の製造方法 - Google Patents
半導体封止用樹脂組成物、半導体装置、及び半導体装置の製造方法 Download PDFInfo
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- 150000003512 tertiary amines Chemical class 0.000 description 1
- USFPINLPPFWTJW-UHFFFAOYSA-N tetraphenylphosphonium Chemical compound C1=CC=CC=C1[P+](C=1C=CC=CC=1)(C=1C=CC=CC=1)C1=CC=CC=C1 USFPINLPPFWTJW-UHFFFAOYSA-N 0.000 description 1
- TUQOTMZNTHZOKS-UHFFFAOYSA-N tributylphosphine Chemical compound CCCCP(CCCC)CCCC TUQOTMZNTHZOKS-UHFFFAOYSA-N 0.000 description 1
- SRPWOOOHEPICQU-UHFFFAOYSA-N trimellitic anhydride Chemical compound OC(=O)C1=CC=C2C(=O)OC(=O)C2=C1 SRPWOOOHEPICQU-UHFFFAOYSA-N 0.000 description 1
- DQZNLOXENNXVAD-UHFFFAOYSA-N trimethoxy-[2-(7-oxabicyclo[4.1.0]heptan-4-yl)ethyl]silane Chemical compound C1C(CC[Si](OC)(OC)OC)CCC2OC21 DQZNLOXENNXVAD-UHFFFAOYSA-N 0.000 description 1
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 1
- UKRDPEFKFJNXQM-UHFFFAOYSA-N vinylsilane Chemical class [SiH3]C=C UKRDPEFKFJNXQM-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000001993 wax Substances 0.000 description 1
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Abstract
Description
各実施例及び比較例において、後掲の表に示す成分を配合し、ブレンダーで30分間混合して均一化させてから、温度90℃で加熱しながら混練溶融させ押し出し、更に冷却してから粉砕した。これにより、粒状の半導体封止用樹脂組成物を得た。
・熱硬化性樹脂:o−クレゾールノボラック型エポキシ樹脂。DIC株式会社製 品名 N663EXP。
・硬化剤:フェノール樹脂。明和化成株式会社製 品名 H−3M。
・硬化促進剤:TPP(トリフェニルホスフィン)。北興化学工業株式会社製。
・溶融シリカA:デンカ株式会社製 品名 FB510FC。平均一次粒子径11.8μm。
・溶融シリカB:デンカ株式会社製 品名 FB4DPM。平均一次粒子径4.6μm。
・溶融シリカC:デンカ株式会社製 品名 FB8752FC。平均一次粒子径17.1μm。
・着色剤A:チタンブラック(赤穂化成株式会社製 品名 TilackD TM−B)。電気比抵抗1.0Ω・m。
・着色剤B:油溶性アジン系染料(オリヱント化学工業株式会社製 品番 オリパックB−30)。電気比抵抗1.0Ω・m。
・カーボンブラック:三菱ケミカル株式会社社製 品番 #40。電気比抵抗1×10-2Ω・cm。
上記1.で調整した半導体封止用樹脂組成物について、下記(1)−(2)の評価を行った。また、上記1.で調製した半導体封止用樹脂組成物の硬化物、及び硬化物からなる封止材を備える半導体装置について下記(3)−(5)の評価を行った。
(1)粘度(スリット粘度)
半導体封止用樹脂組成物を、TMM型トランスファー成形機(多加良製作所社製)のポット内に投入し、金型温度175℃、ポット内圧力9.8MPaでトランスファー成形機の金型内に注入した。この場合の半導体封止用樹脂組成物が金型内の厚み0.4mm部分を流動する際の圧力を測定し、粘度(スリット粘度)を算出した。その結果を、表1及び2に示す。
(2)Clイオン含有量及びNaイオン含有量
半導体樹脂組成物10g(固形分換算)を、メタノール50g及び水100gのメタノール水溶液で抽出し、これにより得られた抽出液を、イオンクロマトグラフ装置(カラム:C−C3)により測定することで、抽出液中のナトリウムイオン(Na+)の含有量を算出した。同様に、上記の抽出液をイオンクロマトグラフ装置(カラム:C−SA2)により測定することで、抽出液中の塩化物イオン(Cl-)含有量を算出した。その結果を、表1及び2に示す。
(3)透過率
半導体封止用樹脂組成物を、圧縮圧力9.8MPa、金型温度175℃、加熱時間180秒間の条件で硬化させて硬化物を得、この硬化物を切断、及び研磨することで、厚み90μm、幅10mm、及び縦20mmの硬化物の試験片を作製した。この試験片に、分光光度計(島津製作所社製 MPC−3100)により、可視光(波長550nm)を照射し、透過率を測定した。その結果を表1及び2に示す。
(4)体積抵抗率
半導体封止用樹脂組成物を、注入圧力9.8MPa、金型温度175℃、加熱時間180秒間の条件で、直径100mm、厚み3mmの金型内部で硬化させて試験片を作製した。この試験片を、エレクトロメータ装置(デジタル式振動容量型電位計:TAKEDA RIKEN TR8411)により、常温(25℃)、DC500Vの電圧を印加し、試験片の体積抵抗値を測定した。また、温度150℃で、同様に電圧を印加することで、試験片の体積抵抗値を測定した。それぞれの結果を表1及び2に示す。
(5)チップ透け(隠ぺい性)
基材及び基材に実装された半導体素子、並びに半導体封止用樹脂組成物を圧縮成形機(TOWA社製 FFT1030G)の金型内に入れ、金型温度175℃、注入圧力8MPa、成形時間180秒の成形条件で成形することにより、封止材の厚みが90μmである半導体装置を作製した。この半導体装置において、目視にて、半導体素子の透けを確認し、下記の基準で評価した。その結果を表1及び2に示す。
A:封止材を介しても、半導体素子の透けは確認されない。
B:封止材を介して、半導体素子の色が確認される。
C:封止材を介して、半導体素子の色及びその配置位置が確認される。
D:封止材を介して、半導体素子の色及びその配置位置が明確に確認され、かつ半導体素子に封止材が充填されていない部分がある。
2 基材
3 半導体素子
4 封止材
Claims (13)
- 熱硬化性樹脂(A)と、フィラー(B)と、着色剤(C)とを含有し、
前記フィラー(B)の平均粒子径は、0.5μm以上15.0μm以下であり、
前記着色剤(C)の電気比抵抗は、1.0Ω・m以上である、
半導体封止用樹脂組成物。 - 硬化されて厚み90μmの硬化物に成形された場合の、波長550nm以下における前記硬化物の光線透過率は、1%未満である、
請求項1に記載の半導体封止用樹脂組成物。 - 前記フィラー(B)中の、粒子径が10.0μm以下である粒子の割合は、前記フィラー(B)全量に対して40%以上90%以下である、
請求項1又は2に記載の半導体封止用樹脂組成物。 - 前記着色剤(C)は、チタンブラック、黒色酸化鉄、フタロシアニン系顔料、及びペリレンブラックからなる群から選択される少なくとも一種の顔料を含む、
請求項1から3のいずれか一項に記載の半導体封止用樹脂組成物。 - 前記半導体封止用樹脂組成物の固形分全量に対する前記顔料の量は、0.4質量%以上2.0質量%以下である、
請求項4に記載の半導体封止用樹脂組成物。 - 前記着色剤(C)は、チタンブラックを含み、
前記半導体封止用樹脂組成物の固形分全量に対する前記チタンブラックの量は、0.4質量%以上2.0質量%以下である、
請求項1から5のいずれか一項に記載の半導体封止用樹脂組成物。 - 前記着色剤(C)は、染料を含み、
前記半導体封止用樹脂組成物の固形分全量に対する前記染料の量は、0.1質量%以上0.4質量%以下である、
請求項1から6のいずれか一項に記載の半導体封止用樹脂組成物。 - 前記半導体封止用樹脂組成物の、温度175℃、及び圧力9.8MPaの条件で測定した粘度は、1.0Pa・s以上10.0Pa・s以下である、
請求項1から7のいずれか一項に記載の半導体封止用樹脂組成物。 - 前記半導体封止用樹脂組成物の硬化物の、温度25℃、印加電圧500Vの条件で測定した体積抵抗値は、1×1014Ω・m以上であり、
温度150℃、印加電圧500Vの条件で測定した体積抵抗値は、1×1010Ω・m以上である、
請求項1から8のいずれか一項に記載の半導体封止用樹脂組成物。 - 基材と、前記基材に実装された半導体素子と、前記半導体素子を覆う封止材とを備え、
前記封止材は、請求項1から9のいずれか一項に記載の半導体封止用樹脂組成物の硬化物からなる、
半導体装置。 - 前記封止材の厚みは、90μm以下である、
請求項10に記載の半導体装置。 - 前記封止材の厚みに対する前記フィラー(B)の平均粒子径は、1/7以下である、
請求項10又は11に記載の半導体装置。 - 基材と、前記基材に実装された半導体素子と、前記半導体素子を覆う封止材とを備える半導体装置の製造方法であって、
請求項1から9のいずれか一項に記載の半導体封止用樹脂組成物を圧縮成形することで前記封止材を作製することを含む、
半導体装置の製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018141597A JP7170240B2 (ja) | 2018-07-27 | 2018-07-27 | 半導体封止用樹脂組成物、半導体装置、及び半導体装置の製造方法 |
US17/263,074 US20210309828A1 (en) | 2018-07-27 | 2019-07-10 | Semiconductor-encapsulating resin composition, semiconductor device, and method for fabricating the semiconductor device |
CN201980045313.XA CN112384572B (zh) | 2018-07-27 | 2019-07-10 | 半导体封装用树脂组合物、半导体装置和用于制造半导体装置的方法 |
PCT/JP2019/027393 WO2020022070A1 (ja) | 2018-07-27 | 2019-07-10 | 半導体封止用樹脂組成物、半導体装置、及び半導体装置の製造方法 |
TW108125078A TWI821334B (zh) | 2018-07-27 | 2019-07-16 | 半導體密封用樹脂組成物、半導體裝置及半導體裝置之製造方法 |
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JP2020132750A (ja) * | 2019-02-19 | 2020-08-31 | 住友ベークライト株式会社 | 封止用樹脂組成物およびそれを用いた電子装置 |
KR20230115846A (ko) | 2022-01-27 | 2023-08-03 | 에스케이하이닉스 주식회사 | Tsv용 몰드 언더필 조성물 |
JP7510843B2 (ja) | 2020-02-27 | 2024-07-04 | 日東電工株式会社 | 光半導体封止用樹脂成形物、光半導体封止材及び光半導体装置 |
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JP7170240B2 (ja) | 2022-11-14 |
CN112384572B (zh) | 2023-03-21 |
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WO2020022070A1 (ja) | 2020-01-30 |
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