JP2019515509A5 - - Google Patents

Download PDF

Info

Publication number
JP2019515509A5
JP2019515509A5 JP2018559867A JP2018559867A JP2019515509A5 JP 2019515509 A5 JP2019515509 A5 JP 2019515509A5 JP 2018559867 A JP2018559867 A JP 2018559867A JP 2018559867 A JP2018559867 A JP 2018559867A JP 2019515509 A5 JP2019515509 A5 JP 2019515509A5
Authority
JP
Japan
Prior art keywords
semiconductor package
die
semiconductor
cavity
molding structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2018559867A
Other languages
English (en)
Japanese (ja)
Other versions
JP2019515509A (ja
JP7239796B2 (ja
Filing date
Publication date
Priority claimed from US15/248,151 external-priority patent/US10861796B2/en
Application filed filed Critical
Publication of JP2019515509A publication Critical patent/JP2019515509A/ja
Publication of JP2019515509A5 publication Critical patent/JP2019515509A5/ja
Application granted granted Critical
Publication of JP7239796B2 publication Critical patent/JP7239796B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2018559867A 2016-05-10 2017-05-10 浮遊ダイパッケージ Active JP7239796B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201662334133P 2016-05-10 2016-05-10
US62/334,133 2016-05-10
US15/248,151 2016-08-26
US15/248,151 US10861796B2 (en) 2016-05-10 2016-08-26 Floating die package
PCT/US2017/031987 WO2017196997A1 (en) 2016-05-10 2017-05-10 Floating die package

Publications (3)

Publication Number Publication Date
JP2019515509A JP2019515509A (ja) 2019-06-06
JP2019515509A5 true JP2019515509A5 (enExample) 2020-06-25
JP7239796B2 JP7239796B2 (ja) 2023-03-15

Family

ID=60268030

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018559867A Active JP7239796B2 (ja) 2016-05-10 2017-05-10 浮遊ダイパッケージ

Country Status (5)

Country Link
US (2) US10861796B2 (enExample)
EP (1) EP3455876A4 (enExample)
JP (1) JP7239796B2 (enExample)
CN (1) CN109075129B (enExample)
WO (1) WO2017196997A1 (enExample)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11211305B2 (en) 2016-04-01 2021-12-28 Texas Instruments Incorporated Apparatus and method to support thermal management of semiconductor-based components
US10861796B2 (en) 2016-05-10 2020-12-08 Texas Instruments Incorporated Floating die package
US10325878B2 (en) 2016-06-30 2019-06-18 Kulicke And Soffa Industries, Inc. Methods for generating wire loop profiles for wire loops, and methods for checking for adequate clearance between adjacent wire loops
US10179730B2 (en) 2016-12-08 2019-01-15 Texas Instruments Incorporated Electronic sensors with sensor die in package structure cavity
US10074639B2 (en) 2016-12-30 2018-09-11 Texas Instruments Incorporated Isolator integrated circuits with package structure cavity and fabrication methods
US10411150B2 (en) 2016-12-30 2019-09-10 Texas Instruments Incorporated Optical isolation systems and circuits and photon detectors with extended lateral P-N junctions
US9929110B1 (en) 2016-12-30 2018-03-27 Texas Instruments Incorporated Integrated circuit wave device and method
US10121847B2 (en) 2017-03-17 2018-11-06 Texas Instruments Incorporated Galvanic isolation device
US10797007B2 (en) * 2017-11-28 2020-10-06 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and manufacturing method thereof
JP7177330B2 (ja) * 2018-06-28 2022-11-24 日亜化学工業株式会社 発光装置の製造方法
JP2020088047A (ja) * 2018-11-19 2020-06-04 新日本無線株式会社 半導体装置及びその製造方法
US11489511B2 (en) 2018-12-30 2022-11-01 Texas Instruments Incorporated Highly dispersive bulk acoustic wave resonators
US11394361B2 (en) 2019-02-25 2022-07-19 Texas Instruments Incorporated Buk acoustic wave resonator with guard rings having recessed space from electrode edge and periodic designs
US11264970B2 (en) 2019-03-02 2022-03-01 Texas Instruments Incorporated Piezoelectric resonator with patterned resonant confiners
US11190164B2 (en) 2019-05-24 2021-11-30 Texas Instruments Incorporated Using acoustic reflector to reduce spurious modes
US11139268B2 (en) * 2019-08-06 2021-10-05 Advanced Semiconductor Engineering, Inc. Semiconductor package structure and method of manufacturing the same
US11081428B2 (en) 2019-08-10 2021-08-03 Texas Instruments Incorporated Electronic device with three dimensional thermal pad
CN110361112A (zh) * 2019-08-12 2019-10-22 龙微科技无锡有限公司 适用于mems绝压压力传感器的无应力封装结构及其封装方法
US11239130B2 (en) * 2019-10-10 2022-02-01 Texas Instruments Incorporated Selective molding for integrated circuit
US11356082B2 (en) 2019-12-12 2022-06-07 Texas Instruments Incorporated Folded ramp generator
DE102020102876B4 (de) * 2020-02-05 2023-08-10 Infineon Technologies Ag Elektronisches Bauelement, Herstellungsverfahren dafür und Verfahren zur Herstellung eines elektronischen Moduls dieses aufweisend mittels eines Sinterverfahrens mit einer Opferschicht auf der Rückseitenmetallisierung eines Halbleiterdies
US11830810B2 (en) * 2020-05-07 2023-11-28 Wolfspeed, Inc. Packaged transistor having die attach materials with channels and process of implementing the same
US11495522B2 (en) 2020-12-14 2022-11-08 Texas Instruments Incorporated Suspended semiconductor dies
US11935844B2 (en) * 2020-12-31 2024-03-19 Texas Instruments Incorporated Semiconductor device and method of the same
US11211373B1 (en) * 2021-02-22 2021-12-28 United Silicon Carbide, Inc. Double-sided chip stack assembly
US12319563B2 (en) 2021-06-11 2025-06-03 Texas Instruments Incorporated Semiconductor package with metal column mold barrier
US12431858B2 (en) * 2022-05-26 2025-09-30 Win Semiconductors Corp. Electronic structure and method of manufacturing the same
JP2024047257A (ja) * 2022-09-26 2024-04-05 株式会社Screenホールディングス 基板処理方法、基板処理装置及び基板処理液
US12483222B2 (en) 2023-02-24 2025-11-25 Texas Instruments Incorporated Spurious mode reduction for electromechanical resonator circuit
DE102023212987A1 (de) 2023-12-19 2025-06-26 Infineon Technologies Ag Halbleitervorrichtung und verfahren zum herstellen derselben

Family Cites Families (177)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2182913A (en) 1939-10-04 1939-12-12 Hubley Mfg Company Toy airplane
US3363155A (en) 1964-08-19 1968-01-09 Philips Corp Opto-electronic transistor with a base-collector junction spaced from the material heterojunction
US4007978A (en) 1974-01-18 1977-02-15 Texas Instruments Incorporated Integrated optical circuits
US3952265A (en) 1974-10-29 1976-04-20 Hughes Aircraft Company Monolithic dual mode emitter-detector terminal for optical waveguide transmission lines
US4272753A (en) 1978-08-16 1981-06-09 Harris Corporation Integrated circuit fuse
US4210923A (en) 1979-01-02 1980-07-01 Bell Telephone Laboratories, Incorporated Edge illuminated photodetector with optical fiber alignment
US4267484A (en) 1979-08-28 1981-05-12 The United States Of America As Represented By The Secretary Of The Air Force Parallel multi-electrode spark gap switch
US4303934A (en) * 1979-08-30 1981-12-01 Burr-Brown Research Corp. Molded lead frame dual in line package including a hybrid circuit
US4996577A (en) 1984-01-23 1991-02-26 International Rectifier Corporation Photovoltaic isolator and process of manufacture thereof
US4757210A (en) 1987-03-02 1988-07-12 Rockwell International Corporation Edge illuminated detector arrays for determination of spectral content
JPS6457739A (en) * 1987-08-28 1989-03-06 Toshiba Corp Resin seal type element
US4916506A (en) 1988-11-18 1990-04-10 Sprague Electric Company Integrated-circuit lead-frame package with low-resistance ground-lead and heat-sink means
US4891730A (en) 1989-05-10 1990-01-02 The United States Of America As Represented By The Secretary Of The Army Monolithic microwave integrated circuit terminal protection device
US5003509A (en) 1990-03-27 1991-03-26 National Semiconductor Corp. Multi-port, bipolar-CMOS memory cell
US5340993A (en) 1993-04-30 1994-08-23 Motorola, Inc. Optocoupler package wth integral voltage isolation barrier
JPH0715030A (ja) 1993-06-07 1995-01-17 Motorola Inc 線形集積光結合素子およびその製造方法
US6728113B1 (en) 1993-06-24 2004-04-27 Polychip, Inc. Method and apparatus for non-conductively interconnecting integrated circuits
US5372565A (en) 1993-11-23 1994-12-13 Igor N. Burdenko Universal exercise device
US5389578A (en) 1994-01-04 1995-02-14 Texas Instruments Incorporated Optical coupler
US5514892A (en) 1994-09-30 1996-05-07 Motorola, Inc. Electrostatic discharge protection device
US5600174A (en) 1994-10-11 1997-02-04 The Board Of Trustees Of The Leeland Stanford Junior University Suspended single crystal silicon structures and method of making same
US5796570A (en) 1996-09-19 1998-08-18 National Semiconductor Corporation Electrostatic discharge protection package
US6111305A (en) 1997-10-09 2000-08-29 Nippon Telegraph And Telephone Corporation P-I-N semiconductor photodetector
DE19800459A1 (de) 1998-01-08 1999-07-22 Siemens Ag Oszillatorstruktur mit wenigstens einem Oszillator-Schaltkreis und wenigstens einem Resonator
JPH11274196A (ja) 1998-03-26 1999-10-08 Seiko Epson Corp 半導体装置の製造方法およびモールドシステム並びに半導体装置
US5929514A (en) 1998-05-26 1999-07-27 Analog Devices, Inc. Thermally enhanced lead-under-paddle I.C. leadframe
CN1118103C (zh) 1998-10-21 2003-08-13 李韫言 微细加工热辐射红外传感器
US5990519A (en) 1998-11-27 1999-11-23 United Microelectronics Corp. Electrostatic discharge structure
US6351011B1 (en) 1998-12-08 2002-02-26 Littlefuse, Inc. Protection of an integrated circuit with voltage variable materials
JP2000311959A (ja) 1999-04-27 2000-11-07 Sanyo Electric Co Ltd 半導体装置とその製造方法
RU2169962C2 (ru) 1999-07-13 2001-06-27 Минг-Тунг ШЕН Модуль с полупроводниковыми микросхемами и способ его изготовления
US6300632B1 (en) 1999-10-14 2001-10-09 The Regents Of The University Of Michigan Uncooled infrared focal plane imager and microelectromechanical infrared detector for use therein
KR20010037247A (ko) 1999-10-15 2001-05-07 마이클 디. 오브라이언 반도체패키지
US6509574B2 (en) 1999-12-02 2003-01-21 Texas Instruments Incorporated Optocouplers having integrated organic light-emitting diodes
JP3367930B2 (ja) 2000-02-28 2003-01-20 日本特殊陶業株式会社 制御システム
TW466720B (en) * 2000-05-22 2001-12-01 Siliconware Precision Industries Co Ltd Semiconductor package with flash-prevention structure and manufacture method
US6507264B1 (en) 2000-08-28 2003-01-14 Littelfuse, Inc. Integral fuse for use in semiconductor packages
JP4565727B2 (ja) 2000-10-10 2010-10-20 三洋電機株式会社 半導体装置の製造方法
RU2201017C2 (ru) 2000-10-26 2003-03-20 Зао "Синтэк" Оптрон
US7334326B1 (en) 2001-06-19 2008-02-26 Amkor Technology, Inc. Method for making an integrated circuit substrate having embedded passive components
US6801114B2 (en) 2002-01-23 2004-10-05 Broadcom Corp. Integrated radio having on-chip transformer balun
US20030141802A1 (en) 2002-01-28 2003-07-31 John Liebeskind Electronic device having a getter used as a circuit element
JP2003282935A (ja) 2002-03-26 2003-10-03 Sharp Corp 光結合素子、その製造方法、及び電子機器
US20030183916A1 (en) 2002-03-27 2003-10-02 John Heck Packaging microelectromechanical systems
US20040080025A1 (en) * 2002-09-17 2004-04-29 Shinko Electric Industries Co., Ltd. Lead frame, method of manufacturing the same, and semiconductor device manufactured with the same
US6879004B2 (en) 2002-11-05 2005-04-12 Silicon Labs Cp, Inc. High voltage difference amplifier with spark gap ESD protection
US6977468B1 (en) 2003-02-03 2005-12-20 Auburn University Integrated spark gap device
DE10318501A1 (de) 2003-04-24 2005-01-05 Robert Bosch Gmbh Chipaufbau in einem Premold-Gehäuse
US7247246B2 (en) 2003-10-20 2007-07-24 Atmel Corporation Vertical integration of a MEMS structure with electronics in a hermetically sealed cavity
US6921704B1 (en) 2003-11-05 2005-07-26 Advanced Micro Devices, Inc. Method for improving MOS mobility
RU2263999C1 (ru) 2004-02-02 2005-11-10 ЗАО "Синтез электронных компонентов" Интегральный оптрон
US7196313B2 (en) 2004-04-02 2007-03-27 Fairchild Semiconductor Corporation Surface mount multi-channel optocoupler
US7180098B2 (en) 2004-04-05 2007-02-20 Legerity, Inc. Optical isolator device, and method of making same
US7508644B2 (en) 2004-06-30 2009-03-24 Research In Motion Limited Spark gap apparatus and method for electrostatic discharge protection
US7015587B1 (en) 2004-09-07 2006-03-21 National Semiconductor Corporation Stacked die package for semiconductor devices
DE102004043663B4 (de) 2004-09-07 2006-06-08 Infineon Technologies Ag Halbleitersensorbauteil mit Hohlraumgehäuse und Sensorchip und Verfahren zur Herstellung eines Halbleitersensorbauteils mit Hohlraumgehäuse und Sensorchip
US7204737B2 (en) 2004-09-23 2007-04-17 Temic Automotive Of North America, Inc. Hermetically sealed microdevice with getter shield
WO2006044804A2 (en) 2004-10-18 2006-04-27 Chippac, Inc. Multi chip leadframe package
JP2006120953A (ja) 2004-10-22 2006-05-11 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
US7718967B2 (en) 2005-01-26 2010-05-18 Analog Devices, Inc. Die temperature sensors
US8487260B2 (en) 2005-01-26 2013-07-16 Analog Devices, Inc. Sensor
JP4724488B2 (ja) 2005-02-25 2011-07-13 日立オートモティブシステムズ株式会社 集積化マイクロエレクトロメカニカルシステム
KR100833017B1 (ko) 2005-05-12 2008-05-27 주식회사 엘지화학 직접 패턴법을 이용한 고해상도 패턴형성방법
US9129826B2 (en) * 2005-05-31 2015-09-08 Stats Chippac Ltd. Epoxy bump for overhang die
WO2007031850A2 (en) 2005-09-14 2007-03-22 University Of The Witwatersbrand, Johannesburg Spark gap protection device
JP4594205B2 (ja) 2005-10-05 2010-12-08 本田技研工業株式会社 車両用方向指示灯
US20070158826A1 (en) * 2005-12-27 2007-07-12 Yamaha Corporation Semiconductor device
US7436054B2 (en) 2006-03-03 2008-10-14 Silicon Matrix, Pte. Ltd. MEMS microphone with a stacked PCB package and method of producing the same
JP5001564B2 (ja) 2006-03-17 2012-08-15 日本電波工業株式会社 表面実装用の水晶発振器とその製造方法
JP2007325013A (ja) 2006-06-01 2007-12-13 Alps Electric Co Ltd 表面弾性波装置の製造方法及び表面弾性波装置
US7732892B2 (en) 2006-11-03 2010-06-08 Taiwan Semiconductor Manufacturing Co., Ltd. Fuse structures and integrated circuit devices
US7834435B2 (en) 2006-12-27 2010-11-16 Mediatek Inc. Leadframe with extended pad segments between leads and die pad, and leadframe package using the same
US20080217759A1 (en) 2007-03-06 2008-09-11 Taiwan Solutions Systems Corp. Chip package substrate and structure thereof
FR2913816B1 (fr) 2007-03-16 2009-06-05 Commissariat Energie Atomique Procede de fabrication d'une structure d'interconnexions a cavites pour circuit integre
US20080266730A1 (en) 2007-04-25 2008-10-30 Karsten Viborg Spark Gaps for ESD Protection
US8436460B1 (en) 2007-05-04 2013-05-07 Cypress Semiconductor Corporation Multiple die paddle leadframe and semiconductor device package
US8049326B2 (en) 2007-06-07 2011-11-01 The Regents Of The University Of Michigan Environment-resistant module, micropackage and methods of manufacturing same
WO2008157509A2 (en) 2007-06-14 2008-12-24 University Of Florida Research Foundation, Inc. Room temperature carbon nanotubes integrated on cmos
CN101754778B (zh) 2007-07-19 2012-04-18 Shl集团有限责任公司 用于传送药物的自动装置
JP5076725B2 (ja) 2007-08-13 2012-11-21 富士電機株式会社 絶縁トランスおよび電力変換装置
JP4912275B2 (ja) * 2007-11-06 2012-04-11 新光電気工業株式会社 半導体パッケージ
US7847387B2 (en) 2007-11-16 2010-12-07 Infineon Technologies Ag Electrical device and method
US8159056B1 (en) 2008-01-15 2012-04-17 Rf Micro Devices, Inc. Package for an electronic device
JP4636187B2 (ja) 2008-04-22 2011-02-23 株式会社デンソー 力学量センサの製造方法および力学量センサ
US7842542B2 (en) 2008-07-14 2010-11-30 Stats Chippac, Ltd. Embedded semiconductor die package and method of making the same using metal frame carrier
US8148781B2 (en) 2008-07-28 2012-04-03 MCube Inc. Method and structures of monolithically integrated ESD suppression device
US8193596B2 (en) 2008-09-03 2012-06-05 Solid State System Co., Ltd. Micro-electro-mechanical systems (MEMS) package
JP2010071816A (ja) 2008-09-18 2010-04-02 Toshiba Corp 電子装置
US8072770B2 (en) 2008-10-14 2011-12-06 Texas Instruments Incorporated Semiconductor package with a mold material encapsulating a chip and a portion of a lead frame
JP5045769B2 (ja) * 2009-03-04 2012-10-10 株式会社デンソー センサ装置の製造方法
JP5590814B2 (ja) * 2009-03-30 2014-09-17 ピーエスフォー ルクスコ エスエイアールエル 半導体装置及びその製造方法
JP2010245337A (ja) * 2009-04-07 2010-10-28 Elpida Memory Inc 半導体装置及びその製造方法
EP2252077B1 (en) 2009-05-11 2012-07-11 STMicroelectronics Srl Assembly of a capacitive acoustic transducer of the microelectromechanical type and package thereof
US8519481B2 (en) 2009-10-14 2013-08-27 Taiwan Semiconductor Manufacturing Company, Ltd. Voids in STI regions for forming bulk FinFETs
US8183593B2 (en) 2009-10-16 2012-05-22 Oracle America, Inc. Semiconductor die with integrated electro-static discharge device
US8274301B2 (en) 2009-11-02 2012-09-25 International Business Machines Corporation On-chip accelerated failure indicator
US8410463B2 (en) 2009-11-12 2013-04-02 Fairchild Semiconductor Corporation Optocoupler devices
IT1397976B1 (it) 2009-12-23 2013-02-04 St Microelectronics Rousset Trasduttore di tipo microelettromeccanico e relativo procedimento di assemblaggio.
JP2011192841A (ja) 2010-03-15 2011-09-29 Toshiba Corp 半導体装置
US8368232B2 (en) 2010-03-25 2013-02-05 Qualcomm Incorporated Sacrificial material to facilitate thin die attach
CN102884627B (zh) 2010-04-12 2015-12-16 米克罗森斯电子工贸有限公司 非制冷红外检测器及用于制造非制冷红外检测器的方法
WO2011134167A1 (en) 2010-04-30 2011-11-03 Ubotic Intellectual Property Co., Ltd. Air cavity package configured to electrically couple to a printed circuit board and method of providing same
JP5521827B2 (ja) 2010-06-28 2014-06-18 セイコーエプソン株式会社 焦電型検出器、焦電型検出装置及び電子機器
US8569090B2 (en) 2010-12-03 2013-10-29 Babak Taheri Wafer level structures and methods for fabricating and packaging MEMS
US8260098B1 (en) 2011-02-17 2012-09-04 Nxp B.V. Optocoupler circuit
DE102011004577B4 (de) * 2011-02-23 2023-07-27 Robert Bosch Gmbh Bauelementträger, Verfahren zur Herstellung eines solchen Bauelementträgers sowie Bauteil mit einem MEMS-Bauelement auf einem solchen Bauelementträger
JP5541306B2 (ja) 2011-05-27 2014-07-09 株式会社デンソー 力学量センサ装置およびその製造方法
US20130001710A1 (en) 2011-06-29 2013-01-03 Invensense, Inc. Process for a sealed mems device with a portion exposed to the environment
US8564004B2 (en) 2011-11-29 2013-10-22 Cree, Inc. Complex primary optics with intermediate elements
US8587077B2 (en) 2012-01-02 2013-11-19 Windtop Technology Corp. Integrated compact MEMS device with deep trench contacts
US9154103B2 (en) 2012-01-30 2015-10-06 Avago Technologies General Ip (Singapore) Pte. Ltd. Temperature controlled acoustic resonator
US9667218B2 (en) 2012-01-30 2017-05-30 Avago Technologies General Ip (Singapore) Pte. Ltd. Temperature controlled acoustic resonator comprising feedback circuit
US9466532B2 (en) 2012-01-31 2016-10-11 Taiwan Semiconductor Manufacturing Company, Ltd. Micro-electro mechanical system (MEMS) structures with through substrate vias and methods of forming the same
EP2625992B1 (en) 2012-02-09 2014-04-09 Koninklijke Philips N.V. Device for use in a blender
US9279946B2 (en) 2012-05-23 2016-03-08 Avago Technologies General Ip (Singapore) Pte. Ltd. Premolded cavity for optoelectronic device
DE102012208730A1 (de) 2012-05-24 2013-11-28 Osram Opto Semiconductors Gmbh Optoelektronische Bauelementevorrichtung und Verfahren zum Herstellen einer optoelektronischen Bauelementevorrichtung
DE102012209235B4 (de) * 2012-05-31 2023-08-10 Robert Bosch Gmbh Sensormodul mit zwei mikromechanischen Sensorelementen
US8674509B2 (en) * 2012-05-31 2014-03-18 Freescale Semiconductor, Inc. Integrated circuit die assembly with heat spreader
US9269609B2 (en) 2012-06-01 2016-02-23 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor isolation structure with air gaps in deep trenches
US9011176B2 (en) 2012-06-09 2015-04-21 Apple Inc. ESD path for connector receptacle
US9310552B2 (en) 2012-06-15 2016-04-12 Micron Technology, Inc. Methods and apparatus providing thermal isolation of photonic devices
US8704370B2 (en) * 2012-06-29 2014-04-22 Freescale Semiconductor, Inc. Semiconductor package structure having an air gap and method for forming
US8633551B1 (en) 2012-06-29 2014-01-21 Intel Corporation Semiconductor package with mechanical fuse
JP6084401B2 (ja) 2012-08-30 2017-02-22 浜松ホトニクス株式会社 側面入射型のフォトダイオードの製造方法
GB2506174A (en) 2012-09-24 2014-03-26 Wolfson Microelectronics Plc Protecting a MEMS device from excess pressure and shock
US8912890B2 (en) 2012-10-01 2014-12-16 Thin Film Electronics Asa Surveillance devices with multiple capacitors
US9184012B2 (en) 2012-12-19 2015-11-10 Allegro Microsystems, Llc Integrated circuit fuse and method of fabricating the integrated circuit fuse
DE102013100388B4 (de) * 2013-01-15 2014-07-24 Epcos Ag Bauelement mit einer MEMS Komponente und Verfahren zur Herstellung
DE102013101262A1 (de) 2013-02-08 2014-08-14 Osram Opto Semiconductors Gmbh Optoelektronisches Leuchtmodul, optoelektronische Leuchtvorrichtung und Kfz-Scheinwerfer
US20150380353A1 (en) 2013-02-12 2015-12-31 Freescale Semiconductor, Inc. Method of fabricating an integrated circuit device, and an integrated circuit device therefrom
US9445057B2 (en) 2013-02-20 2016-09-13 Magna Electronics Inc. Vehicle vision system with dirt detection
US10002700B2 (en) 2013-02-27 2018-06-19 Qualcomm Incorporated Vertical-coupling transformer with an air-gap structure
US8916943B2 (en) 2013-03-01 2014-12-23 Taiwan Semiconductor Manufacturing Company, Ltd. MEMS devices having a plurality of cavities
US9349616B2 (en) * 2013-03-13 2016-05-24 Stats Chippac, Ltd. Semiconductor device and method of forming WLCSP with semiconductor die embedded within interconnect structure
US10197519B2 (en) 2013-03-15 2019-02-05 H2Scan Corporation Gas sensing systems and methods
US9006857B1 (en) 2013-04-04 2015-04-14 William N. Carr Platform comprising an infrared sensor
EP2790474B1 (en) 2013-04-09 2016-03-16 Harman Becker Automotive Systems GmbH Thermoelectric cooler/heater integrated in printed circuit board
JP6256933B2 (ja) 2013-05-23 2018-01-10 木村 光照 濃縮機能を有する水素ガスセンサとこれに用いる水素ガスセンサプローブ
US20150004902A1 (en) 2013-06-28 2015-01-01 John M. Pigott Die-to-die inductive communication devices and methods
US9432759B2 (en) 2013-07-22 2016-08-30 Infineon Technologies Ag Surface mountable microphone package, a microphone arrangement, a mobile phone and a method for recording microphone signals
ITTO20130651A1 (it) 2013-07-31 2015-02-01 St Microelectronics Srl Procedimento di fabbricazione di un dispositivo incapsulato, in particolare un sensore micro-elettro-meccanico incapsulato, dotato di una struttura accessibile, quale un microfono mems e dispositivo incapsulato cosi' ottenuto
US20150069537A1 (en) * 2013-09-08 2015-03-12 Wai Yew Lo Package-on-package semiconductor sensor device
US20150094875A1 (en) 2013-09-30 2015-04-02 Yacov Duzly Temperature-Controlled Storage Module that Cools Memory Prior to a Data Burst
US20160100256A1 (en) 2013-10-30 2016-04-07 Knowles Electronics, Llc Acoustic Assembly and Method of Manufacturing The Same
US9160423B2 (en) 2013-12-12 2015-10-13 Freescale Semiconductor, Inc. Die-to-die inductive communication devices and methods
US9630832B2 (en) 2013-12-19 2017-04-25 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of manufacturing
US9287831B2 (en) 2013-12-23 2016-03-15 Analog Devices Global Temperature stabilized circuitry
GB2521619A (en) 2013-12-23 2015-07-01 Nokia Technologies Oy An apparatus and associated methods for flexible carrier substrates
US9754848B2 (en) 2014-01-14 2017-09-05 Lg Innotek Co., Ltd. Gas sensor package
DE102014200500A1 (de) 2014-01-14 2015-07-16 Robert Bosch Gmbh Mikromechanische Drucksensorvorrichtung und entsprechendes Herstellungsverfahren
DE102014210006A1 (de) 2014-02-18 2015-08-20 Robert Bosch Gmbh Sensoreinheit und Verfahren zur Herstellung einer Sensoreinheit
US9818665B2 (en) 2014-02-28 2017-11-14 Infineon Technologies Ag Method of packaging a semiconductor chip using a 3D printing process and semiconductor package having angled surfaces
AU2015256068B2 (en) 2014-05-07 2020-08-13 Washington State University Microwave sterilization or pasteurization
JP2016003977A (ja) 2014-06-18 2016-01-12 セイコーエプソン株式会社 物理量センサー装置、高度計、電子機器および移動体
US9863828B2 (en) 2014-06-18 2018-01-09 Seiko Epson Corporation Physical quantity sensor, electronic device, altimeter, electronic apparatus, and mobile object
US9281331B2 (en) 2014-06-19 2016-03-08 Taiwan Semiconductor Manufacturing Co., Ltd. High dielectric constant structure for the vertical transfer gates of a complementary metal-oxide semiconductor (CMOS) image sensor
TWI691036B (zh) 2014-06-23 2020-04-11 澳大利亞商西拉娜集團私人有限公司 具有隔離部的接合晶粒
FR3024920A1 (fr) 2014-08-13 2016-02-19 St Microelectronics Grenoble 2 Puce de circuit integre a derive en temperature corrigee
US9472788B2 (en) 2014-08-27 2016-10-18 3M Innovative Properties Company Thermally-assisted self-assembly method of nanoparticles and nanowires within engineered periodic structures
US9698256B2 (en) 2014-09-24 2017-07-04 Taiwan Semiconductor Manufacturing Co., Ltd. Termination of super junction power MOSFET
US10167189B2 (en) 2014-09-30 2019-01-01 Analog Devices, Inc. Stress isolation platform for MEMS devices
US20160167089A1 (en) 2014-12-11 2016-06-16 Palo Alto Research Center Incorporation Forming sacrificial structures using phase-change materials that sublimate
US9219028B1 (en) 2014-12-17 2015-12-22 Freescale Semiconductor, Inc. Die-to-die inductive communication devices and methods
US20160209285A1 (en) 2015-01-20 2016-07-21 Seiko Epson Corporation Pressure sensor, method of manufacturing pressure sensor, altimeter, electronic apparatus, and moving object
US9419075B1 (en) 2015-01-28 2016-08-16 Texas Instruments Incorporated Wafer substrate removal
US9769554B2 (en) 2015-03-05 2017-09-19 Stmicroelectronics (Malta) Ltd Semiconductor integrated device for acoustic applications with contamination protection element, and manufacturing method thereof
KR102330757B1 (ko) 2015-03-30 2021-11-25 삼성전자주식회사 반도체 장치 및 그 제조 방법
KR102373816B1 (ko) 2015-08-06 2022-03-15 삼성전자주식회사 반도체 소자
US20170047271A1 (en) * 2015-08-10 2017-02-16 Freescale Semiconductor, Inc. Method for making a semiconductor device having an interposer
JP2017067463A (ja) 2015-09-28 2017-04-06 セイコーエプソン株式会社 圧力センサー、高度計、電子機器および移動体
JP2017092698A (ja) 2015-11-10 2017-05-25 セイコーエプソン株式会社 発振器、電子機器、及び、移動体
US9957159B2 (en) 2016-03-28 2018-05-01 Evigia Systems, Inc. System and method for an ovenized silicon platform using Si/SiO2 hybrid supports
US10861796B2 (en) 2016-05-10 2020-12-08 Texas Instruments Incorporated Floating die package
US10179730B2 (en) * 2016-12-08 2019-01-15 Texas Instruments Incorporated Electronic sensors with sensor die in package structure cavity
US9761543B1 (en) 2016-12-20 2017-09-12 Texas Instruments Incorporated Integrated circuits with thermal isolation and temperature regulation
US9929110B1 (en) 2016-12-30 2018-03-27 Texas Instruments Incorporated Integrated circuit wave device and method
US10636777B2 (en) 2017-12-22 2020-04-28 Ams Sensors Uk Limited Infra-red device

Similar Documents

Publication Publication Date Title
JP2019515509A5 (enExample)
CN102589753B (zh) 压力传感器及其封装方法
US9297713B2 (en) Pressure sensor device with through silicon via
TW201304113A (zh) 半導體感測裝置及其封裝方法
JP2013247131A5 (ja) 半導体装置
JP2011176271A5 (enExample)
JP2015159321A5 (enExample)
TWI642160B (zh) 用於四方平面無引腳封裝的導線架結構、四方平面無引腳封裝及形成導線架結構的方法
JP2016072492A5 (enExample)
CN103378019A (zh) 具有散热结构的半导体封装结构及其制造方法
CN108447843B (zh) 窗口型球栅阵列封装组件
US20150200180A1 (en) Pressure sensor device with gel retainer
TW201513288A (zh) 半導體裝置
JP2016518725A5 (enExample)
CN104425426A (zh) 压力传感器装置及装配方法
JP2017028200A5 (enExample)
JP2009064897A5 (enExample)
JP2012013528A5 (enExample)
CN103682049A (zh) 一种防水贴片led及其生产工艺
TWM551755U (zh) 泛用型導線架
CN106531701B (zh) 一种散热盖接地封装结构及其工艺方法
CN207993847U (zh) 半导体封装组件
CN208938954U (zh) 一种无基岛框架封装结构
US20150084169A1 (en) Semiconductor package with stress relief and heat spreader
CN205376512U (zh) 导线架及四方扁平无外引脚封装结构