JP2019203155A5 - - Google Patents
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- Publication number
- JP2019203155A5 JP2019203155A5 JP2018097404A JP2018097404A JP2019203155A5 JP 2019203155 A5 JP2019203155 A5 JP 2019203155A5 JP 2018097404 A JP2018097404 A JP 2018097404A JP 2018097404 A JP2018097404 A JP 2018097404A JP 2019203155 A5 JP2019203155 A5 JP 2019203155A5
- Authority
- JP
- Japan
- Prior art keywords
- shower plate
- coupled plasma
- capacitively coupled
- forming apparatus
- film forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005040 ion trap Methods 0.000 claims 1
- 150000002500 ions Chemical class 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018097404A JP7126381B2 (ja) | 2018-05-21 | 2018-05-21 | 成膜装置および成膜方法 |
| PCT/JP2019/015389 WO2019225184A1 (ja) | 2018-05-21 | 2019-04-09 | 成膜装置および成膜方法 |
| CN201980031668.3A CN112135925B (zh) | 2018-05-21 | 2019-04-09 | 成膜装置和成膜方法 |
| US17/056,342 US11578407B2 (en) | 2018-05-21 | 2019-04-09 | Film-forming apparatus and film-forming method |
| KR1020207035556A KR102571839B1 (ko) | 2018-05-21 | 2019-04-09 | 성막 장치 및 성막 방법 |
| TW108115835A TW202006174A (zh) | 2018-05-21 | 2019-05-08 | 成膜裝置及成膜方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018097404A JP7126381B2 (ja) | 2018-05-21 | 2018-05-21 | 成膜装置および成膜方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2019203155A JP2019203155A (ja) | 2019-11-28 |
| JP2019203155A5 true JP2019203155A5 (enExample) | 2021-04-08 |
| JP7126381B2 JP7126381B2 (ja) | 2022-08-26 |
Family
ID=68616320
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018097404A Active JP7126381B2 (ja) | 2018-05-21 | 2018-05-21 | 成膜装置および成膜方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US11578407B2 (enExample) |
| JP (1) | JP7126381B2 (enExample) |
| KR (1) | KR102571839B1 (enExample) |
| CN (1) | CN112135925B (enExample) |
| TW (1) | TW202006174A (enExample) |
| WO (1) | WO2019225184A1 (enExample) |
Families Citing this family (36)
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| US10510575B2 (en) | 2017-09-20 | 2019-12-17 | Applied Materials, Inc. | Substrate support with multiple embedded electrodes |
| US10555412B2 (en) | 2018-05-10 | 2020-02-04 | Applied Materials, Inc. | Method of controlling ion energy distribution using a pulse generator with a current-return output stage |
| US11476145B2 (en) | 2018-11-20 | 2022-10-18 | Applied Materials, Inc. | Automatic ESC bias compensation when using pulsed DC bias |
| JP7451540B2 (ja) | 2019-01-22 | 2024-03-18 | アプライド マテリアルズ インコーポレイテッド | パルス状電圧波形を制御するためのフィードバックループ |
| US11508554B2 (en) | 2019-01-24 | 2022-11-22 | Applied Materials, Inc. | High voltage filter assembly |
| JP7413099B2 (ja) * | 2020-03-16 | 2024-01-15 | 東京エレクトロン株式会社 | 成膜方法および成膜装置 |
| WO2021246020A1 (ja) * | 2020-06-01 | 2021-12-09 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
| CN113755822B (zh) * | 2020-06-04 | 2024-03-01 | 中国科学院微电子研究所 | 一种用于原子层沉积系统的平板式放电装置 |
| JP7689417B2 (ja) * | 2020-07-10 | 2025-06-06 | 東京エレクトロン株式会社 | 成膜装置及び成膜方法 |
| US11462389B2 (en) | 2020-07-31 | 2022-10-04 | Applied Materials, Inc. | Pulsed-voltage hardware assembly for use in a plasma processing system |
| US11901157B2 (en) | 2020-11-16 | 2024-02-13 | Applied Materials, Inc. | Apparatus and methods for controlling ion energy distribution |
| US11798790B2 (en) | 2020-11-16 | 2023-10-24 | Applied Materials, Inc. | Apparatus and methods for controlling ion energy distribution |
| JP7662285B2 (ja) * | 2021-03-02 | 2025-04-15 | 東京エレクトロン株式会社 | 成膜方法、処理装置及び処理システム |
| US11495470B1 (en) | 2021-04-16 | 2022-11-08 | Applied Materials, Inc. | Method of enhancing etching selectivity using a pulsed plasma |
| KR20220153420A (ko) * | 2021-05-11 | 2022-11-18 | 주성엔지니어링(주) | 박막 형성 방법 |
| US11791138B2 (en) | 2021-05-12 | 2023-10-17 | Applied Materials, Inc. | Automatic electrostatic chuck bias compensation during plasma processing |
| US11948780B2 (en) | 2021-05-12 | 2024-04-02 | Applied Materials, Inc. | Automatic electrostatic chuck bias compensation during plasma processing |
| JP7626546B2 (ja) * | 2021-06-01 | 2025-02-04 | 東京エレクトロン株式会社 | 半導体装置の製造方法及び基板処理装置 |
| US11967483B2 (en) | 2021-06-02 | 2024-04-23 | Applied Materials, Inc. | Plasma excitation with ion energy control |
| US20220399185A1 (en) | 2021-06-09 | 2022-12-15 | Applied Materials, Inc. | Plasma chamber and chamber component cleaning methods |
| US12148595B2 (en) | 2021-06-09 | 2024-11-19 | Applied Materials, Inc. | Plasma uniformity control in pulsed DC plasma chamber |
| US11810760B2 (en) | 2021-06-16 | 2023-11-07 | Applied Materials, Inc. | Apparatus and method of ion current compensation |
| US11569066B2 (en) | 2021-06-23 | 2023-01-31 | Applied Materials, Inc. | Pulsed voltage source for plasma processing applications |
| KR102852461B1 (ko) * | 2021-07-22 | 2025-09-01 | 세메스 주식회사 | 기판 처리 장치 |
| US11476090B1 (en) | 2021-08-24 | 2022-10-18 | Applied Materials, Inc. | Voltage pulse time-domain multiplexing |
| US12106938B2 (en) | 2021-09-14 | 2024-10-01 | Applied Materials, Inc. | Distortion current mitigation in a radio frequency plasma processing chamber |
| JP7705787B2 (ja) | 2021-11-26 | 2025-07-10 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
| US11694876B2 (en) | 2021-12-08 | 2023-07-04 | Applied Materials, Inc. | Apparatus and method for delivering a plurality of waveform signals during plasma processing |
| KR102863828B1 (ko) | 2021-12-28 | 2025-09-24 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
| US11972924B2 (en) | 2022-06-08 | 2024-04-30 | Applied Materials, Inc. | Pulsed voltage source for plasma processing applications |
| US12315732B2 (en) | 2022-06-10 | 2025-05-27 | Applied Materials, Inc. | Method and apparatus for etching a semiconductor substrate in a plasma etch chamber |
| JP2024030139A (ja) | 2022-08-23 | 2024-03-07 | 東京エレクトロン株式会社 | プラズマ処理を行う装置、及びプラズマ処理を行う方法 |
| US12272524B2 (en) | 2022-09-19 | 2025-04-08 | Applied Materials, Inc. | Wideband variable impedance load for high volume manufacturing qualification and on-site diagnostics |
| JP2024103289A (ja) | 2023-01-20 | 2024-08-01 | 東京エレクトロン株式会社 | プラズマ処理装置、およびプラズマ処理方法 |
| JP2024106239A (ja) | 2023-01-26 | 2024-08-07 | 東京エレクトロン株式会社 | 分散板、ガス供給機構及び基板処理装置 |
| JP2024112103A (ja) * | 2023-02-07 | 2024-08-20 | 東京エレクトロン株式会社 | プラズマ処理を行う装置、及びプラズマ処理を行う方法 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7091605B2 (en) * | 2001-09-21 | 2006-08-15 | Eastman Kodak Company | Highly moisture-sensitive electronic device element and method for fabrication |
| DE10060002B4 (de) * | 1999-12-07 | 2016-01-28 | Komatsu Ltd. | Vorrichtung zur Oberflächenbehandlung |
| US7871676B2 (en) * | 2000-12-06 | 2011-01-18 | Novellus Systems, Inc. | System for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD) |
| US6537928B1 (en) * | 2002-02-19 | 2003-03-25 | Asm Japan K.K. | Apparatus and method for forming low dielectric constant film |
| US7695590B2 (en) * | 2004-03-26 | 2010-04-13 | Applied Materials, Inc. | Chemical vapor deposition plasma reactor having plural ion shower grids |
| US7381291B2 (en) * | 2004-07-29 | 2008-06-03 | Asm Japan K.K. | Dual-chamber plasma processing apparatus |
| US20060042752A1 (en) * | 2004-08-30 | 2006-03-02 | Rueger Neal R | Plasma processing apparatuses and methods |
| US7897217B2 (en) | 2005-11-18 | 2011-03-01 | Tokyo Electron Limited | Method and system for performing plasma enhanced atomic layer deposition |
| WO2008010591A1 (en) * | 2006-07-21 | 2008-01-24 | Nec Corporation | Method for forming porous insulating film |
| JP4799623B2 (ja) * | 2009-01-19 | 2011-10-26 | 株式会社東芝 | カーボンナノチューブ成長方法 |
| CA2653581A1 (en) | 2009-02-11 | 2010-08-11 | Kenneth Scott Alexander Butcher | Migration and plasma enhanced chemical vapour deposition |
| US8119527B1 (en) | 2009-08-04 | 2012-02-21 | Novellus Systems, Inc. | Depositing tungsten into high aspect ratio features |
| US20110117728A1 (en) * | 2009-08-27 | 2011-05-19 | Applied Materials, Inc. | Method of decontamination of process chamber after in-situ chamber clean |
| US20130059448A1 (en) | 2011-09-07 | 2013-03-07 | Lam Research Corporation | Pulsed Plasma Chamber in Dual Chamber Configuration |
| US9184028B2 (en) * | 2010-08-04 | 2015-11-10 | Lam Research Corporation | Dual plasma volume processing apparatus for neutral/ion flux control |
| JP2012134288A (ja) | 2010-12-21 | 2012-07-12 | Elpida Memory Inc | 半導体装置の製造方法 |
| CN103243310B (zh) * | 2012-02-14 | 2017-04-12 | 诺发系统公司 | 在衬底表面上的等离子体激活的保形膜沉积的方法 |
| US9373517B2 (en) * | 2012-08-02 | 2016-06-21 | Applied Materials, Inc. | Semiconductor processing with DC assisted RF power for improved control |
| CN105122431A (zh) * | 2013-03-13 | 2015-12-02 | 应用材料公司 | 脉冲式直流等离子体蚀刻方法以及设备 |
| KR101451244B1 (ko) * | 2013-03-22 | 2014-10-15 | 참엔지니어링(주) | 라이너 어셈블리 및 이를 구비하는 기판 처리 장치 |
| JP6406811B2 (ja) * | 2013-11-20 | 2018-10-17 | 国立大学法人名古屋大学 | Iii 族窒化物半導体装置の製造装置および製造方法ならびに半導体ウエハの製造方法 |
| US9502238B2 (en) * | 2015-04-03 | 2016-11-22 | Lam Research Corporation | Deposition of conformal films by atomic layer deposition and atomic layer etch |
| JP6516542B2 (ja) | 2015-04-20 | 2019-05-22 | 東京エレクトロン株式会社 | 被エッチング層をエッチングする方法 |
| US9349605B1 (en) * | 2015-08-07 | 2016-05-24 | Applied Materials, Inc. | Oxide etch selectivity systems and methods |
| US9972504B2 (en) * | 2015-08-07 | 2018-05-15 | Lam Research Corporation | Atomic layer etching of tungsten for enhanced tungsten deposition fill |
| US9773643B1 (en) | 2016-06-30 | 2017-09-26 | Lam Research Corporation | Apparatus and method for deposition and etch in gap fill |
| JP6763274B2 (ja) * | 2016-10-14 | 2020-09-30 | 東京エレクトロン株式会社 | 成膜装置、成膜装置のクリーニング方法及び記憶媒体 |
| US20180308687A1 (en) * | 2017-04-24 | 2018-10-25 | Lam Research Corporation | Euv photopatterning and selective deposition for negative pattern mask |
| KR102834037B1 (ko) * | 2018-11-05 | 2025-07-14 | 램 리써치 코포레이션 | 에칭 챔버의 방향성 증착 |
-
2018
- 2018-05-21 JP JP2018097404A patent/JP7126381B2/ja active Active
-
2019
- 2019-04-09 CN CN201980031668.3A patent/CN112135925B/zh active Active
- 2019-04-09 WO PCT/JP2019/015389 patent/WO2019225184A1/ja not_active Ceased
- 2019-04-09 KR KR1020207035556A patent/KR102571839B1/ko active Active
- 2019-04-09 US US17/056,342 patent/US11578407B2/en active Active
- 2019-05-08 TW TW108115835A patent/TW202006174A/zh unknown
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