JP2019149549A - ミスカット基板を用いた高パワーの窒化ガリウムエレクトロニクス - Google Patents
ミスカット基板を用いた高パワーの窒化ガリウムエレクトロニクス Download PDFInfo
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 81
- 239000000758 substrate Substances 0.000 title claims abstract description 69
- 229910002601 GaN Inorganic materials 0.000 title description 56
- 238000000034 method Methods 0.000 claims description 40
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 230000000694 effects Effects 0.000 abstract description 5
- 230000007547 defect Effects 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 91
- 239000000463 material Substances 0.000 description 25
- 229910052751 metal Inorganic materials 0.000 description 21
- 239000002184 metal Substances 0.000 description 21
- 235000012431 wafers Nutrition 0.000 description 17
- 239000013078 crystal Substances 0.000 description 12
- 239000002019 doping agent Substances 0.000 description 12
- 238000012986 modification Methods 0.000 description 7
- 230000004048 modification Effects 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 229910052984 zinc sulfide Inorganic materials 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
- 238000007796 conventional method Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 238000001000 micrograph Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052790 beryllium Inorganic materials 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 208000032750 Device leakage Diseases 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- MSNOMDLPLDYDME-UHFFFAOYSA-N gold nickel Chemical compound [Ni].[Au] MSNOMDLPLDYDME-UHFFFAOYSA-N 0.000 description 1
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000006225 natural substrate Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
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Abstract
Description
,(1)
ここで、qは電気素量である。
,(2)
ここで、Aは、チャネルまたは電流経路の断面積である。
Claims (20)
- 六方晶構造と、<0001>方向から0.15°〜0.65°の方位差によって特徴付けられる成長表面の法線を有するIII−V族基板と、
前記III−V族基板に結合された第1のエピタキシャル層と、
前記第1のエピタキシャル層に結合された第2のエピタキシャル層と、
前記基板と電気的に接続される第1のコンタクトと、
前記第2のエピタキシャル層と電気的に接続される第2のコンタクトと
を含む、電子デバイス。 - 前記成長表面の前記法線が、負の<1−100>方向に向かって方位差をつけられている、請求項1に記載の電子デバイス。
- 前記方位差が0.4°〜0.5°である、請求項1に記載の電子デバイス。
- 前記成長表面の前記法線が、<11−20>方向に向かって実質的にゼロ度の方位差によって特徴付けられる、請求項1に記載の電子デバイス。
- 前記成長表面の前記法線が、<1−100>方向に向かって−0.4°〜−0.5°の範囲の角度で、および<11−20>方向に向かって−0.1°〜−0.2°の範囲の角度で方位差をつけられている、請求項1に記載の電子デバイス。
- 前記III−V族基板がn型のGaN基板を含む、請求項1に記載の電子デバイス。
- 前記第1のエピタキシャル層が、n型のGaNエピタキシャル層を含み、前記第2のエピタキシャル層が、p型のGaNエピタキシャル層を含む、請求項1に記載の電子デバイス。
- 前記電子デバイスがPNダイオードを含み、前記第1のコンタクトがカソードを含み、前記第2のコンタクトがアノードを含む、請求項1に記載の電子デバイス。
- 前記第2のエピタキシャル層に横方向に配置された絶縁領域をさらに含む、請求項1に記載の電子デバイス。
- 前記第2のエピタキシャル層と前記第2のコンタクトとの間に配置された第3のエピタキシャル層をさらに含み、前記第3のエピタキシャル層のドーピング密度は、前記第2のエピタキシャル層のドーピング密度よりも高い、請求項1に記載の電子デバイス。
- 六方晶構造と、<0001>方向から0.15°〜0.65°の方位差によって特徴付けられる成長表面の法線を有するIII−V族基板を提供するステップと、
前記III−V族基板に結合された第1のエピタキシャル層を成長させるステップと、
前記第1のエピタキシャル層に結合された第2のエピタキシャル層を成長させるステップと、
前記基板と電気的に接続される第1のコンタクトを形成するステップと、
前記第2のエピタキシャル層と電気的に接続される第2のコンタクトを形成するステップと
を含む、電子デバイスを製造する方法。 - 前記成長表面の前記法線が、負の<1−100>方向に向かって方位差をつけられている、請求項11に記載の方法。
- 前記方位差が0.4°〜0.5°である、請求項12に記載の方法。
- 前記成長表面の前記法線が、<11−20>方向に向かって実質的にゼロ度の方位差によって特徴付けられる、請求項11に記載の方法。
- 前記III−V族基板がn型のGaN基板を含む、請求項11に記載の方法。
- 前記第1のエピタキシャル層が、3μmより大きい厚さを有するn型のGaNエピタキシャル層を含み、前記第2のエピタキシャル層が、p型のGaNエピタキシャル層を含む、請求項11に記載の方法。
- 前記n型のGaNエピタキシャル層が、5μmより大きい厚さを有する、請求項16に記載の方法。
- 前記電子デバイスがPNダイオードを含み、前記第1のコンタクトがカソードを含み、前記第2のコンタクトがアノードを含む、請求項11に記載の方法。
- 前記第2のエピタキシャル層に横方向に配置された絶縁領域を形成するステップをさらに含む、請求項11に記載の方法。
- 前記第2のエピタキシャル層と前記第2のコンタクトとの間に配置された第3のエピタキシャル層を形成するステップをさらに含み、前記第3のエピタキシャル層のドーピング密度は、前記第2のエピタキシャル層のドーピング密度よりも高い、請求項11に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/071,032 US9368582B2 (en) | 2013-11-04 | 2013-11-04 | High power gallium nitride electronics using miscut substrates |
US14/071,032 | 2013-11-04 |
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JP2016552433A Division JP6857290B2 (ja) | 2013-11-04 | 2014-11-03 | ミスカット基板を用いた高パワーの窒化ガリウムエレクトロニクス |
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JP6857290B2 (ja) | 2021-04-14 |
CN105765725B (zh) | 2020-04-17 |
KR102257666B1 (ko) | 2021-05-27 |
CN111554752B (zh) | 2024-03-22 |
US10347736B2 (en) | 2019-07-09 |
US20190348522A1 (en) | 2019-11-14 |
JP2023025002A (ja) | 2023-02-21 |
CN111554752A (zh) | 2020-08-18 |
US20170133481A1 (en) | 2017-05-11 |
JP2016537831A (ja) | 2016-12-01 |
WO2015066596A1 (en) | 2015-05-07 |
JP2021005710A (ja) | 2021-01-14 |
US20150123138A1 (en) | 2015-05-07 |
US20180166556A1 (en) | 2018-06-14 |
JP6857786B2 (ja) | 2021-04-14 |
KR20210062743A (ko) | 2021-05-31 |
CN105765725A (zh) | 2016-07-13 |
US10854727B2 (en) | 2020-12-01 |
KR102393431B1 (ko) | 2022-04-29 |
US9368582B2 (en) | 2016-06-14 |
US20200273965A1 (en) | 2020-08-27 |
US10566439B2 (en) | 2020-02-18 |
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