CN111554752A - 使用斜切衬底的高功率氮化镓电子器件 - Google Patents
使用斜切衬底的高功率氮化镓电子器件 Download PDFInfo
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- CN111554752A CN111554752A CN202010274985.2A CN202010274985A CN111554752A CN 111554752 A CN111554752 A CN 111554752A CN 202010274985 A CN202010274985 A CN 202010274985A CN 111554752 A CN111554752 A CN 111554752A
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 87
- 239000000758 substrate Substances 0.000 title claims abstract description 80
- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 67
- 239000013078 crystal Substances 0.000 claims abstract description 16
- 230000005669 field effect Effects 0.000 claims abstract description 12
- 238000004519 manufacturing process Methods 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims description 33
- 239000002019 doping agent Substances 0.000 claims description 8
- 238000002955 isolation Methods 0.000 claims description 5
- 239000000463 material Substances 0.000 description 26
- 238000012876 topography Methods 0.000 description 22
- 229910052751 metal Inorganic materials 0.000 description 21
- 239000002184 metal Substances 0.000 description 21
- 235000012431 wafers Nutrition 0.000 description 18
- 238000010586 diagram Methods 0.000 description 11
- 238000012986 modification Methods 0.000 description 7
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- 230000015556 catabolic process Effects 0.000 description 5
- 238000007796 conventional method Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000001000 micrograph Methods 0.000 description 5
- 229910052984 zinc sulfide Inorganic materials 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000029777 axis specification Effects 0.000 description 2
- 229910052790 beryllium Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 208000032750 Device leakage Diseases 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 241000695274 Processa Species 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- IHBCFWWEZXPPLG-UHFFFAOYSA-N [Ca].[Zn] Chemical compound [Ca].[Zn] IHBCFWWEZXPPLG-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
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- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
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- 230000008020 evaporation Effects 0.000 description 1
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- 230000002349 favourable effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- MSNOMDLPLDYDME-UHFFFAOYSA-N gold nickel Chemical compound [Ni].[Au] MSNOMDLPLDYDME-UHFFFAOYSA-N 0.000 description 1
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000006225 natural substrate Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/66196—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices with an active layer made of a group 13/15 material
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
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- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (15)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202010274985.2A CN111554752B (zh) | 2013-11-04 | 2014-11-03 | 使用斜切衬底的高功率氮化镓电子器件 |
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/071,032 US9368582B2 (en) | 2013-11-04 | 2013-11-04 | High power gallium nitride electronics using miscut substrates |
US14/071,032 | 2013-11-04 | ||
PCT/US2014/063656 WO2015066596A1 (en) | 2013-11-04 | 2014-11-03 | High power gallium nitride electronics using miscut substrates |
CN202010274985.2A CN111554752B (zh) | 2013-11-04 | 2014-11-03 | 使用斜切衬底的高功率氮化镓电子器件 |
CN201480060457.XA CN105765725B (zh) | 2013-11-04 | 2014-11-03 | 使用斜切衬底的高功率氮化镓电子器件 |
Related Parent Applications (1)
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CN201480060457.XA Division CN105765725B (zh) | 2013-11-04 | 2014-11-03 | 使用斜切衬底的高功率氮化镓电子器件 |
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Publication Number | Publication Date |
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CN111554752A true CN111554752A (zh) | 2020-08-18 |
CN111554752B CN111554752B (zh) | 2024-03-22 |
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CN201480060457.XA Active CN105765725B (zh) | 2013-11-04 | 2014-11-03 | 使用斜切衬底的高功率氮化镓电子器件 |
CN202010274985.2A Active CN111554752B (zh) | 2013-11-04 | 2014-11-03 | 使用斜切衬底的高功率氮化镓电子器件 |
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CN201480060457.XA Active CN105765725B (zh) | 2013-11-04 | 2014-11-03 | 使用斜切衬底的高功率氮化镓电子器件 |
Country Status (5)
Country | Link |
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US (5) | US9368582B2 (zh) |
JP (4) | JP6857290B2 (zh) |
KR (2) | KR102393431B1 (zh) |
CN (2) | CN105765725B (zh) |
WO (1) | WO2015066596A1 (zh) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9412911B2 (en) | 2013-07-09 | 2016-08-09 | The Silanna Group Pty Ltd | Optical tuning of light emitting semiconductor junctions |
US9368582B2 (en) * | 2013-11-04 | 2016-06-14 | Avogy, Inc. | High power gallium nitride electronics using miscut substrates |
US11322643B2 (en) | 2014-05-27 | 2022-05-03 | Silanna UV Technologies Pte Ltd | Optoelectronic device |
JP6636459B2 (ja) | 2014-05-27 | 2020-01-29 | シランナ・ユー・ブイ・テクノロジーズ・プライベート・リミテッドSilanna Uv Technologies Pte Ltd | 半導体構造と超格子とを用いた高度電子デバイス |
CN106415854B (zh) | 2014-05-27 | 2019-10-01 | 斯兰纳Uv科技有限公司 | 包括n型和p型超晶格的电子装置 |
WO2015181648A1 (en) | 2014-05-27 | 2015-12-03 | The Silanna Group Pty Limited | An optoelectronic device |
PL228006B1 (pl) * | 2015-09-23 | 2018-02-28 | Inst Wysokich Ciśnień Polskiej Akademii Nauk | Dioda superluminescencyjna na bazie stopu AlInGaN |
WO2017145026A1 (en) | 2016-02-23 | 2017-08-31 | Silanna UV Technologies Pte Ltd | Resonant optical cavity light emitting device |
US10418517B2 (en) | 2016-02-23 | 2019-09-17 | Silanna UV Technologies Pte Ltd | Resonant optical cavity light emitting device |
CN106784181B (zh) * | 2016-12-14 | 2020-06-23 | 中国科学院苏州纳米技术与纳米仿生研究所 | 提高绿光或更长波长InGaN量子阱发光效率的方法及结构 |
US10535741B2 (en) * | 2017-01-28 | 2020-01-14 | Gangfeng Ye | GaN lateral vertical JFET with regrown channel and dielectric gate |
TWI695418B (zh) * | 2017-09-22 | 2020-06-01 | 新唐科技股份有限公司 | 半導體元件及其製造方法 |
JP7150269B2 (ja) * | 2018-05-09 | 2022-10-11 | 学校法人法政大学 | 窒化ガリウム積層基板および半導体装置 |
US10622514B1 (en) | 2018-10-15 | 2020-04-14 | Silanna UV Technologies Pte Ltd | Resonant optical cavity light emitting device |
US11415518B2 (en) | 2019-06-21 | 2022-08-16 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Mapping and evaluating GaN wafers for vertical device applications |
US11626483B2 (en) * | 2019-10-08 | 2023-04-11 | Arizona Board Of Regents On Behalf Of Arizona State University | Low-leakage regrown GaN p-n junctions for GaN power devices |
CN112923861B (zh) * | 2021-01-23 | 2022-05-06 | 长沙理工大学 | 表征掺杂物在复合材料中取向程度的方法 |
DE102021204298A1 (de) * | 2021-04-29 | 2022-11-03 | Robert Bosch Gesellschaft mit beschränkter Haftung | Verfahren zum Herstellen eines vertikalen Leistungshalbleiterbauelements und vertikales Leistungshalbleiterbauelement |
Citations (9)
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JP6857290B2 (ja) | 2021-04-14 |
CN105765725B (zh) | 2020-04-17 |
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CN111554752B (zh) | 2024-03-22 |
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JP2016537831A (ja) | 2016-12-01 |
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JP2021005710A (ja) | 2021-01-14 |
US20150123138A1 (en) | 2015-05-07 |
US20180166556A1 (en) | 2018-06-14 |
JP6857786B2 (ja) | 2021-04-14 |
KR20210062743A (ko) | 2021-05-31 |
CN105765725A (zh) | 2016-07-13 |
US10854727B2 (en) | 2020-12-01 |
KR102393431B1 (ko) | 2022-04-29 |
US9368582B2 (en) | 2016-06-14 |
US20200273965A1 (en) | 2020-08-27 |
US10566439B2 (en) | 2020-02-18 |
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