JP2019054091A5 - - Google Patents

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JP2019054091A5
JP2019054091A5 JP2017176838A JP2017176838A JP2019054091A5 JP 2019054091 A5 JP2019054091 A5 JP 2019054091A5 JP 2017176838 A JP2017176838 A JP 2017176838A JP 2017176838 A JP2017176838 A JP 2017176838A JP 2019054091 A5 JP2019054091 A5 JP 2019054091A5
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Japan
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layer
conductivity type
carrier store
substrate
insulating film
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JP2017176838A
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Japanese (ja)
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JP6825520B2 (ja
JP2019054091A (ja
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Priority to JP2017176838A priority Critical patent/JP6825520B2/ja
Priority claimed from JP2017176838A external-priority patent/JP6825520B2/ja
Priority to US15/951,262 priority patent/US10505027B2/en
Priority to DE102018211354.8A priority patent/DE102018211354A1/de
Publication of JP2019054091A publication Critical patent/JP2019054091A/ja
Priority to US16/596,950 priority patent/US11239350B2/en
Publication of JP2019054091A5 publication Critical patent/JP2019054091A5/ja
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JP2017176838A 2017-09-14 2017-09-14 半導体装置、半導体装置の製造方法、電力変換装置 Active JP6825520B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2017176838A JP6825520B2 (ja) 2017-09-14 2017-09-14 半導体装置、半導体装置の製造方法、電力変換装置
US15/951,262 US10505027B2 (en) 2017-09-14 2018-04-12 Semiconductor device, method of manufacturing semiconductor device and power conversion device
DE102018211354.8A DE102018211354A1 (de) 2017-09-14 2018-07-10 Halbleitervorrichtung, Verfahren zum Herstellen einer Halbleitervorrichtung und Leistungsumwandlungsvorrichtung
US16/596,950 US11239350B2 (en) 2017-09-14 2019-10-09 Semiconductor device, method of manufacturing semiconductor device, power conversion device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017176838A JP6825520B2 (ja) 2017-09-14 2017-09-14 半導体装置、半導体装置の製造方法、電力変換装置

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JP2019054091A JP2019054091A (ja) 2019-04-04
JP2019054091A5 true JP2019054091A5 (enExample) 2020-01-30
JP6825520B2 JP6825520B2 (ja) 2021-02-03

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JP2017176838A Active JP6825520B2 (ja) 2017-09-14 2017-09-14 半導体装置、半導体装置の製造方法、電力変換装置

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US (2) US10505027B2 (enExample)
JP (1) JP6825520B2 (enExample)
DE (1) DE102018211354A1 (enExample)

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JP6720569B2 (ja) * 2015-02-25 2020-07-08 株式会社デンソー 半導体装置
JP7120916B2 (ja) * 2018-12-27 2022-08-17 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
DE102019210681A1 (de) * 2019-05-31 2020-12-03 Robert Bosch Gmbh Leistungstransistorzelle und Leistungstransistor
JP7438080B2 (ja) * 2020-10-30 2024-02-26 三菱電機株式会社 半導体装置
JP7574743B2 (ja) * 2021-05-28 2024-10-29 株式会社デンソー 半導体装置およびその製造方法

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