JP2019054062A - 半導体装置の製造方法および半導体製造装置 - Google Patents
半導体装置の製造方法および半導体製造装置 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 46
- 229910052751 metal Inorganic materials 0.000 claims abstract description 99
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- 229910052782 aluminium Inorganic materials 0.000 description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 9
- 238000010894 electron beam technology Methods 0.000 description 8
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- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
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- VSLPMIMVDUOYFW-UHFFFAOYSA-N dimethylazanide;tantalum(5+) Chemical compound [Ta+5].C[N-]C.C[N-]C.C[N-]C.C[N-]C.C[N-]C VSLPMIMVDUOYFW-UHFFFAOYSA-N 0.000 description 1
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- 229910052710 silicon Inorganic materials 0.000 description 1
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 1
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32321—Discharge generated by other radiation
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- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
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- G—PHYSICS
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/167—Coating processes; Apparatus therefor from the gas phase, by plasma deposition
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
- G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal
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- H01—ELECTRIC ELEMENTS
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
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- H01J37/32—Gas-filled discharge tubes
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- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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Abstract
Description
図1および図2は、第1実施形態の半導体装置の製造方法を示す断面図である。
以上の説明では、有機膜5の例はフォトレジスト膜、金属ガスの例はTMAガス、プラズマ放電条件の例は50℃、5分間となっている。この場合、実験によれば、有機膜5の金属含有率は32%となった。プラズマ放電条件を100℃、5分間に変更したところ、有機膜5の金属含有率は36%となった。また、プラズマ放電条件を50℃、2分間に変更したところ、有機膜5の金属含有率は30%となった。このように、本実施形態によれば、好適な金属含有率を有する有機膜5が得られることが判明した。
図5から図7は、第2実施形態の半導体製造装置の動作を示す断面図である。
図8から図10は、第3実施形態の半導体製造装置の動作を示す断面図である。
本実施形態による半導体装置の製造方法は、基板上に第1膜を形成し、第1膜を有する基板をチャンバ内に収容し、チャンバ内に第1ガスを導入し、チャンバ内で第1ガスのプラズマ放電を発生させ、または、チャンバ内で第1ガスに放射線を照射し、プラズマ放電の発生開始後または放射線の照射開始後に、金属成分を含有する第2ガスをチャンバ内に導入して、金属成分を第1膜内に浸透させることを含む。
3:第1下地層、4:第2下地層、5:有機膜、5a:有機膜パターン、
6:樹脂膜、6a:樹脂膜パターン、7:有機膜、7a:有機膜パターン、
11:チャンバ、11a:第1部分、11b:第2部分、12:ステージ、
13:加熱部、14:プラズマ源、15:第1ガス導入部、16:第2ガス導入部、
17:水蒸気導入部、18:排気部、19:制御部、
21:チャンバ、21a:第1部分、21b:第2部分、22:ステージ、
23:加熱部、24:放射線源、25:第1ガス導入部、26:第2ガス導入部、
27:水蒸気導入部、28:排気部、29:制御部
Claims (6)
- 基板上に第1膜を形成し、
前記第1膜を有する前記基板をチャンバ内に収容し、
前記チャンバ内に第1ガスを導入し、
前記チャンバ内で前記第1ガスのプラズマ放電を発生させ、または、前記チャンバ内で前記第1ガスに放射線を照射し、
前記プラズマ放電の発生開始後または前記放射線の照射開始後に、金属成分を含有する第2ガスを前記チャンバ内に導入して、前記金属成分を前記第1膜内に浸透させる、
ことを含む半導体装置の製造方法。 - 前記基板は、前記第1膜に第1パターンが形成された後に前記チャンバ内に収容され、
前記金属成分は、前記第1パターン内に浸透する、
請求項1に記載の半導体装置の製造方法。 - 前記第1ガスは、前記基板を支持するステージから第1距離に位置する第1ガス導入部から前記チャンバ内に導入され、
前記第2ガスは、前記ステージから前記第1距離よりも近い第2距離に位置する第2ガス導入部から前記チャンバ内に導入される、
請求項1または2に記載の半導体装置の製造方法。 - 前記第1距離は、前記第1ガスからの生成物が前記第1膜に到達する前に失活する距離である、請求項3に記載の半導体装置の製造方法。
- 第1膜を有する基板を収容するチャンバと、
前記チャンバ内に第1ガスを導入する第1ガス導入部と、
前記チャンバ内で前記第1ガスのプラズマ放電を発生させる、または、前記チャンバ内で前記第1ガスに放射線を照射するガス処理部と、
金属成分を含有する第2ガスを前記チャンバ内に導入して、前記金属成分を前記第1膜内に浸透させる第2ガス導入部と、
を備える半導体製造装置。 - 前記第1ガス導入部は、前記基板を支持するステージから第1距離に位置し、
前記第2ガス導入部は、前記ステージから前記第1距離よりも近い第2距離に位置している、請求項5に記載の半導体製造装置。
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US15/891,400 US10395899B2 (en) | 2017-09-13 | 2018-02-08 | Method of manufacturing semiconductor device and semiconductor manufacturing apparatus |
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WO2020050090A1 (ja) * | 2018-09-05 | 2020-03-12 | 東京エレクトロン株式会社 | エッチング方法及びエッチング装置 |
JP2021022636A (ja) * | 2019-07-26 | 2021-02-18 | 株式会社アルバック | 半導体装置の製造方法 |
US11798806B2 (en) | 2021-03-17 | 2023-10-24 | Kioxia Corporation | Pattern forming method and method for manufacturing semiconductor device |
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JP2020150175A (ja) * | 2019-03-14 | 2020-09-17 | キオクシア株式会社 | 半導体装置の製造方法、パターン膜の製造方法および金属含有有機膜 |
JP2021150404A (ja) | 2020-03-17 | 2021-09-27 | キオクシア株式会社 | パターン形成方法および半導体装置の製造方法 |
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