KR100835630B1 - 플라즈마 처리 장치 및 에싱 방법 - Google Patents
플라즈마 처리 장치 및 에싱 방법 Download PDFInfo
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
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Abstract
Description
샘플 번호 | 불활성 가스 | 애싱 가스 | 압력 [Pa] | 마이크로파[W] | 온도 [℃] | 처리 시간 | 플라즈마 처리장치 | |||
He [sccm] | Ar [sccm] | H2 [sccm] | N2 [sccm] | O2 [sccm] | ||||||
1 | 4750 | 250 | 133 | 2000 | 200 | 500㎚ 상당 | 본발명 | |||
2 | 4750 | 250 | 133 | 2000 | 200 | 500㎚ 상당 | 비교예 | |||
3 | 4750 | 250 | 133 | 2000 | 200 | 500㎚ 상당 | 본발명 | |||
4 | 4750 | 250 | 133 | 2000 | 200 | 500㎚ 상당 | 본발명 | |||
5 | 4750 | 250 | 133 | 2000 | 200 | 500㎚ 상당 | 본발명 |
Claims (12)
- 대기압보다 감압된 분위기를 유지할 수 있는 챔버와,상기 챔버에 접속된 전송관과,상기 전송관에 가스를 도입하는 가스 도입 기구와,상기 전송관의 외측에서 내측으로 마이크로파를 도입하는 마이크로파 공급원을 포함하고,상기 전송관 내에서 상기 가스의 플라즈마를 형성하며, 상기 챔버 내에 설치된 피처리체로서 저유전률 재료 위에 레지스트가 형성된 피처리체의 상기 레지스트를 제거하는 에싱 처리를 실시할 수 있는 플라즈마 처리 장치에 있어서,상기 전송관은 상기 피처리체의 주요면에 대하여 거의 수직인 상기 챔버의 내벽에 개구하도록 접속되고,상기 피처리체는 상기 플라즈마에서 바라본 직시선 상에 설치되어 있지 않으며,상기 플라즈마로부터 방출되는 빛을 차단하고, 상기 플라즈마로부터 방출되는 활성종을 투과시키는 차광체(light shield)를 상기 활성종이 상기 챔버 내에 도입되는 부분에서 상기 챔버의 내벽면에 근접시켜 설치한 것을 특징으로 하는 플라즈마 처리 장치.
- 대기압보다 감압된 분위기를 유지할 수 있는 챔버와,상기 챔버에 접속된 전송관과,상기 전송관에 가스를 도입하는 가스 도입 기구와,상기 전송관의 외측에서 내측으로 마이크로파를 도입하는 마이크로파 공급원을 포함하고,상기 전송관 내에서 상기 가스의 플라즈마를 형성하며, 상기 챔버 내에 설치된 피처리체로서 저유전률 재료 위에 레지스트가 형성된 피처리체의 상기 레지스트를 제거하는 에싱 처리를 실시할 수 있는 플라즈마 처리 장치에 있어서,상기 전송관은 상기 피처리체의 주요면에 대하여 거의 수직인 상기 챔버의 내벽에 개구하도록 접속되고,상기 피처리체는 상기 플라즈마에서 바라본 직시선 상에 설치되어 있지 않으며,상기 전송관은 상기 챔버의 상기 내벽에 대하여 거의 수직으로 접속된 경우와 비교하여 그 축선이 상기 피처리체로부터 멀어지는 방향으로 경사져서 상기 챔버의 내벽에 접속되어 이루어지는 것을 특징으로 하는 플라즈마 처리 장치.
- 대기압보다 감압된 분위기를 유지할 수 있는 챔버와,거의 L자형의 접속관을 통해 상기 챔버에 접속된 전송관과,상기 전송관에 가스를 도입하는 가스 도입 기구와,상기 전송관의 외측에서 내측으로 마이크로파를 도입하는 마이크로파 공급원을 포함하고,상기 전송관 내에서 상기 가스의 플라즈마를 형성하며, 상기 챔버 내에 설치된 피처리체로서 저유전률 재료 위에 레지스트가 형성된 피처리체의 상기 레지스트를 제거하는 에싱 처리를 실시할 수 있는 플라즈마 처리 장치에 있어서,상기 접속관은 상기 피처리체의 주요면에 거의 대향하는 상기 챔버의 내벽에 개구하도록 접속되고,상기 접속관의 내벽은 불소 함유 수지에 의해 이루어지며,상기 플라즈마로부터 방출되는 빛을 차단하고, 상기 플라즈마로부터 방출되는 활성종을 투과시키는 차광체를 상기 활성종이 상기 챔버 내에 도입되는 부분에서 상기 챔버의 내벽면에 근접시켜 설치한 것을 특징으로 하는 플라즈마 처리 장치.
- 제2항에 있어서, 상기 플라즈마로부터 방출되는 빛을 차단하고, 상기 플라즈마로부터 방출되는 활성종을 투과시키는 차광체를 상기 활성종이 상기 챔버 내에 도입되는 부분에서 상기 챔버의 내벽면에 근접시켜 설치한 것을 특징으로 하는 플라즈마 처리 장치.
- 삭제
- 제1항 내지 제3항 중 어느 한 항에 있어서, 상기 전송관으로부터 공급되는 가스 흐름의 상기 피처리체 위에 있어서의 분포를 조정하는 정류 수단을 더 포함하는 것을 특징으로 하는 플라즈마 처리 장치.
- 제1항 내지 제3항 중 어느 한 항에 있어서, 상기 챔버의 내벽 및 상기 전송관의 내벽 중 적어도 어느 하나에 상기 플라즈마로부터 방출되는 빛을 흡수하는 흡수체가 설치된 것을 특징으로 하는 플라즈마 처리 장치.
- 절연층 위에 레지스트가 형성된 피처리체의 상기 레지스트를 제거하는 에싱 방법에 있어서,수소와 불활성 가스를 함유하는 플라즈마를 형성하는 단계와,대기압보다 감압된 분위기를 유지할 수 있는 챔버 내에 설치된 상기 피처리체에 상기 플라즈마로부터 방출되는 활성종을 작용시키는 단계와,상기 플라즈마로부터 방출되는 빛이 상기 활성종이 상기 챔버 내에 도입되는 부분에서 차단된 상태에서 상기 레지스트를 제거하는 단계를 포함하는 것을 특징으로 하는 에싱 방법.
- 제8항에 있어서, 상기 불활성 가스는 헬륨인 것을 특징으로 하는 에싱 방법.
- 제8항 또는 제9항에 있어서, 상기 절연층은 저유전률 재료를 포함하는 것을 특징으로 하는 에싱 방법.
- 삭제
- 삭제
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JPJP-P-2003-00207379 | 2003-08-12 | ||
JP2003207379A JP2005064037A (ja) | 2003-08-12 | 2003-08-12 | プラズマ処理装置及びアッシング方法 |
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KR1020067002878A KR100835630B1 (ko) | 2003-08-12 | 2004-08-06 | 플라즈마 처리 장치 및 에싱 방법 |
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US (1) | US7491908B2 (ko) |
EP (1) | EP1655770A4 (ko) |
JP (1) | JP2005064037A (ko) |
KR (2) | KR100895253B1 (ko) |
CN (1) | CN100466193C (ko) |
TW (1) | TW200522198A (ko) |
WO (1) | WO2005015628A1 (ko) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050284573A1 (en) * | 2004-06-24 | 2005-12-29 | Egley Fred D | Bare aluminum baffles for resist stripping chambers |
JP5236225B2 (ja) * | 2007-07-31 | 2013-07-17 | ルネサスエレクトロニクス株式会社 | 半導体集積回路装置の製造方法 |
JPWO2009063755A1 (ja) * | 2007-11-14 | 2011-03-31 | 東京エレクトロン株式会社 | プラズマ処理装置および半導体基板のプラズマ処理方法 |
US8741778B2 (en) * | 2010-12-14 | 2014-06-03 | Applied Materials, Inc. | Uniform dry etch in two stages |
US10049881B2 (en) * | 2011-08-10 | 2018-08-14 | Applied Materials, Inc. | Method and apparatus for selective nitridation process |
JP5780928B2 (ja) * | 2011-11-22 | 2015-09-16 | 株式会社アルバック | プラズマ処理装置 |
WO2015171335A1 (en) | 2014-05-06 | 2015-11-12 | Applied Materials, Inc. | Directional treatment for multi-dimensional device processing |
US10134581B2 (en) * | 2016-03-13 | 2018-11-20 | Applied Materials, Inc. | Methods and apparatus for selective dry etch |
US11694911B2 (en) * | 2016-12-20 | 2023-07-04 | Lam Research Corporation | Systems and methods for metastable activated radical selective strip and etch using dual plenum showerhead |
CN112912251A (zh) * | 2018-10-23 | 2021-06-04 | Hzo股份有限公司 | 涂覆的基板的等离子灰化 |
KR20210135357A (ko) * | 2019-04-05 | 2021-11-12 | 어플라이드 머티어리얼스, 인코포레이티드 | 가변 유동 밸브를 갖는 프로세스 시스템 |
US11508573B2 (en) | 2019-12-31 | 2022-11-22 | Micron Technology, Inc. | Plasma doping of gap fill materials |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0945495A (ja) * | 1995-08-02 | 1997-02-14 | Ulvac Japan Ltd | プラズマ処理装置 |
JPH10298787A (ja) * | 1997-04-25 | 1998-11-10 | Shibaura Eng Works Co Ltd | ドライエッチング装置 |
JP2000183040A (ja) * | 1998-12-15 | 2000-06-30 | Canon Inc | 有機層間絶縁膜エッチング後のレジストアッシング方法 |
JP2001115267A (ja) * | 1999-10-19 | 2001-04-24 | Canon Inc | プラズマ処理装置及び処理方法 |
JP2002075961A (ja) * | 2000-08-24 | 2002-03-15 | Toshiba Corp | 半導体装置の製造方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5449073A (en) * | 1977-09-26 | 1979-04-18 | Mitsubishi Electric Corp | Plasma processing unit |
US5441568A (en) * | 1994-07-15 | 1995-08-15 | Applied Materials, Inc. | Exhaust baffle for uniform gas flow pattern |
US5866986A (en) * | 1996-08-05 | 1999-02-02 | Integrated Electronic Innovations, Inc. | Microwave gas phase plasma source |
JP3218348B2 (ja) * | 1998-05-21 | 2001-10-15 | 株式会社アルバック | プラズマアッシング方法 |
JP2000012526A (ja) | 1998-06-25 | 2000-01-14 | Mitsubishi Electric Corp | プラズマ処理装置およびプラズマ処理方法 |
US6383301B1 (en) * | 1998-08-04 | 2002-05-07 | E. I. Du Pont De Nemours And Company | Treatment of deagglomerated particles with plasma-activated species |
JP2000100790A (ja) * | 1998-09-22 | 2000-04-07 | Canon Inc | プラズマ処理装置及びそれを用いた処理方法 |
US6281135B1 (en) | 1999-08-05 | 2001-08-28 | Axcelis Technologies, Inc. | Oxygen free plasma stripping process |
US6287643B1 (en) * | 1999-09-30 | 2001-09-11 | Novellus Systems, Inc. | Apparatus and method for injecting and modifying gas concentration of a meta-stable or atomic species in a downstream plasma reactor |
US6426304B1 (en) * | 2000-06-30 | 2002-07-30 | Lam Research Corporation | Post etch photoresist strip with hydrogen for organosilicate glass low-κ etch applications |
US7083991B2 (en) * | 2002-01-24 | 2006-08-01 | Novellus Systems, Inc. | Method of in-situ treatment of low-k films with a silylating agent after exposure to oxidizing environments |
-
2003
- 2003-08-12 JP JP2003207379A patent/JP2005064037A/ja not_active Withdrawn
-
2004
- 2004-08-06 KR KR1020087008103A patent/KR100895253B1/ko active IP Right Grant
- 2004-08-06 US US10/567,665 patent/US7491908B2/en not_active Expired - Fee Related
- 2004-08-06 EP EP04771632A patent/EP1655770A4/en not_active Withdrawn
- 2004-08-06 KR KR1020067002878A patent/KR100835630B1/ko active IP Right Grant
- 2004-08-06 CN CNB2004800261699A patent/CN100466193C/zh not_active Expired - Lifetime
- 2004-08-06 WO PCT/JP2004/011657 patent/WO2005015628A1/ja active Application Filing
- 2004-08-12 TW TW093124253A patent/TW200522198A/zh unknown
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0945495A (ja) * | 1995-08-02 | 1997-02-14 | Ulvac Japan Ltd | プラズマ処理装置 |
JPH10298787A (ja) * | 1997-04-25 | 1998-11-10 | Shibaura Eng Works Co Ltd | ドライエッチング装置 |
JP2000183040A (ja) * | 1998-12-15 | 2000-06-30 | Canon Inc | 有機層間絶縁膜エッチング後のレジストアッシング方法 |
JP2001115267A (ja) * | 1999-10-19 | 2001-04-24 | Canon Inc | プラズマ処理装置及び処理方法 |
JP2002075961A (ja) * | 2000-08-24 | 2002-03-15 | Toshiba Corp | 半導体装置の製造方法 |
Also Published As
Publication number | Publication date |
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TW200522198A (en) | 2005-07-01 |
KR20080036157A (ko) | 2008-04-24 |
JP2005064037A (ja) | 2005-03-10 |
US7491908B2 (en) | 2009-02-17 |
EP1655770A4 (en) | 2009-01-14 |
KR20060038468A (ko) | 2006-05-03 |
KR100895253B1 (ko) | 2009-04-29 |
CN1849701A (zh) | 2006-10-18 |
US20070151956A1 (en) | 2007-07-05 |
TWI303850B (ko) | 2008-12-01 |
CN100466193C (zh) | 2009-03-04 |
WO2005015628A1 (ja) | 2005-02-17 |
EP1655770A1 (en) | 2006-05-10 |
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