CN112997282A - 用于将蚀刻层蚀刻的方法 - Google Patents
用于将蚀刻层蚀刻的方法 Download PDFInfo
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- CN112997282A CN112997282A CN201980072844.8A CN201980072844A CN112997282A CN 112997282 A CN112997282 A CN 112997282A CN 201980072844 A CN201980072844 A CN 201980072844A CN 112997282 A CN112997282 A CN 112997282A
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- stack
- gas
- reactant gas
- plasma
- etching
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- 238000005530 etching Methods 0.000 title claims abstract description 43
- 239000000376 reactant Substances 0.000 claims abstract description 52
- 238000000231 atomic layer deposition Methods 0.000 claims abstract description 33
- 230000001681 protective effect Effects 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 10
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- 238000010926 purge Methods 0.000 claims description 17
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
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- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 3
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- 229910052786 argon Inorganic materials 0.000 description 3
- 229910002091 carbon monoxide Inorganic materials 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
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- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 230000004075 alteration Effects 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- -1 ion radicals Chemical class 0.000 description 2
- 229910052743 krypton Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
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- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
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- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 1
- 150000005837 radical ions Chemical class 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- Formation Of Insulating Films (AREA)
Abstract
提供了一种在堆叠件中蚀刻特征的方法,所述堆叠件包括在衬底上的介电材料。在步骤(a)中,由蚀刻气体产生蚀刻等离子体,将所述堆叠件暴露于所述蚀刻等离子体,并且部分地蚀刻所述堆叠件中的特征。在步骤(b)中,在步骤(a)之后提供原子层沉积工艺以在侧壁上沉积保护膜。所述原子层沉积工艺包括多个循环,其中每个循环包括:将所述堆叠件暴露于包含WF6的第一反应物气体中,其中所述第一反应物气体被吸附到所述堆叠件上;以及将所述堆叠件暴露于由第二反应物气体形成的等离子体,其中由所述第二反应物气体形成的所述等离子体与吸附的第一反应物气体反应以在所述堆叠件上方形成保护膜。在步骤(c)中,至少重复步骤(a)‑(b)一次。
Description
相关申请的交叉引用
本申请要求2018年11月5日提交的美国申请No.62/755,707的优先权利益,其全部内容通过引用并入本文以用于所有目的。
技术领域
本公开内容涉及在半导体晶片上形成半导体设备的方法。更具体地,本公开内容涉及在堆叠件中的蚀刻层中蚀刻凹入特征。
背景技术
在形成半导体设备中,可以对蚀刻层进行蚀刻以形成触点孔或沟槽。一些半导体设备可以通过蚀刻基于氧化硅(SiO2)的层来形成。
发明内容
为了实现前述目标,并且根据本公开内容的目的,提供了一种在堆叠件中蚀刻特征的方法,所述堆叠件包括在衬底上的介电材料。在步骤(a)中,由蚀刻气体产生蚀刻等离子体,将所述堆叠件暴露于所述蚀刻等离子体,并且部分地蚀刻所述堆叠件中的特征。在步骤(b)中,在步骤(a)之后提供原子层沉积工艺以在侧壁上沉积保护膜。所述原子层沉积工艺包括多个循环,其中每个循环包括:将所述堆叠件暴露于包含WF6的第一反应物气体中,其中所述第一反应物气体被吸附到所述堆叠件上;以及将所述堆叠件暴露于由第二反应物气体形成的等离子体,其中由所述第二反应物气体形成的所述等离子体与吸附的第一反应物气体反应以在所述堆叠件上方形成保护膜。在步骤(c)中,至少重复步骤(a)-(b)一次。
在另一实现方式中,提供一种用于蚀刻堆叠件中的特征的装置。提供一种处理室。衬底支撑件在所述处理室内。气体入口向所述处理室提供气体。气体源将所述气体提供给气体入口,其中,所述气体源包括:蚀刻气体源;WF6气体源;和反应物气体源。提供排放泵以用于从所述处理室抽出气体。电极在所述处理室中提供RF功率。至少一个电源向所述电极提供功率。控制器能控制地连接至所述气体源和所述至少一个电源,其中,所述控制器包括:至少一个处理器;和计算机可读介质。所述计算机可读介质包括用于通过第一多个循环执行蚀刻堆叠件的计算机代码,其中所述第一多个循环中的每一个包括:部分地蚀刻所述堆叠件;并且通过原子层沉积,经由提供第二多个循环而在所述堆叠件上沉积层。所述第二多个循环中的每个循环包括:使含WF6的气体从所述WF6气体源流动;将所述含WF6的气体吸附到所述堆叠件上;停止所述含WF6的气体的流动;以及将所述堆叠件暴露于来自所述反应物气体源的反应物气体的等离子体中,其中所述等离子体将吸附的所述含WF6的气体转化为原子层沉积层。
本公开内容的这些特征和其它特征将在下面在本公开内容的详细描述中并结合以下附图进行更详细的描述。
附图说明
在附图中以示例而非限制的方式示出了本公开,并且附图中相同的附图标记表示相似的元件,其中:
图1是一种实施方案的高阶流程图。
图2A-G是根据一个实施方案处理的堆叠件的示意图。
图3是可以在实施方案中使用的蚀刻室的示意图。
图4是可用于实践实施方案的计算机系统的示意图。
具体实施方式
现在将参考附图中所示的几个示例性实施方案来详细描述本发明。在下面的描述中,阐述了许多具体细节以便提供对本公开的彻底理解。然而,对于本领域技术人员显而易见的是,本公开可以在没有这些具体细节中的一些或全部的情况下实施。在其他情况下,未详细描述公知的工艺步骤和/或结构,以免不必要地使本公开不清楚。
高深宽比蚀刻需要在最小横向CD(关键尺寸)生长(CD翘曲)的情况下保持竖直轮廓。另外,应该避免轮廓折衷,例如降低的掩模选择性、降低的蚀刻速率或特征的封盖/堵塞。CD翘曲是由蚀刻特征的侧壁引起的。可以在侧壁上放置钝化层以减少CD翘曲。一些方法在高于250℃的温度下沉积侧壁钝化层以提供均匀的钝化。如此高的温度可能会损坏半导体设备。
在实施方案的示例中,图1是一种实施方案的高阶流程图。如图2A所示,该实施方案可以用于处理堆叠件200。图2A是堆叠件200的横截面图,其中衬底204设置在蚀刻层208下方,并且蚀刻层208设置在掩模212下方。在该示例中,掩模212是硬掩模,例如等离子体增强化学气相沉积(PECVD)非晶碳掩模。在该示例中,蚀刻层208是由诸如氧化硅(SiO2)之类的介电材料制成的介电层。一层或多层(未示出)可以设置在衬底204和蚀刻层208之间。一层或多层(未示出)也可以设置在蚀刻层208和掩模212之间。
将特征部分地蚀刻到蚀刻层208中(步骤104)。用于将特征部分地蚀刻到蚀刻层208中(步骤104)的配方的示例提供5-50mTorr的压强。射频(RF)功率以60兆赫(MHz)的频率提供500瓦(W)-10千瓦(kW)的功率,并且以400赫兹(kHz)的频率提供1kW-30kW的功率。RF功率在这些功率电平之间被脉冲化。提供蚀刻气体。蚀刻气体包括氧气(O2)、碳氟化合物和/或氢氟碳化合物。通过RF功率将蚀刻气体形成为等离子体。等离子体提供负责高深宽比蚀刻的自由基离子。这样的等离子体在说明书和权利要求书中称为蚀刻等离子体。当部分蚀刻完成时,蚀刻气体的流动停止。停止或减少RF功率,使得不产生等离子体。图2B是在特征216已经被部分蚀刻之后的堆叠件200的截面图。
在部分蚀刻(步骤104)之后,提供原子层沉积工艺(步骤108)以在特征216的侧壁上沉积保护膜。原子层沉积工艺(步骤108)包括具有多个循环的循环工艺。在原子层沉积工艺的循环的第一阶段(步骤108)中,将堆叠件200暴露于含六氟化钨(WF6)的第一反应物气体中(步骤112)。提供包含0.5至200sccm的WF6的气体流。在该实施方案中,第一反应物气体不转化成等离子体。结果,该步骤是无等离子体的。堆叠件温度保持在40℃至80℃的范围内。第一反应物气体被吸附到堆叠件200的表面上。3秒钟后,第一反应物气体的流动停止。
不受理论的束缚,据信WF6与SiO2化学反应以形成氧化硅化钨(SiOW)层。图2C是在特征216的表面(包括侧壁)上已经形成SiOW层220之后的堆叠件200的截面图。SiOW层220未按比例绘制,而是示出为厚得多,以便更好地说明SiOW层220。
在吸附了第一反应物气体之后(步骤112),提供了第一清扫(步骤116)以清扫第一反应物气体。在此示例中,通过使O2流入等离子处理室来提供第一清扫。其他实施方案可以具有清扫气体纯氮气(N2)、或N2和氩气(Ar)的混合物、或纯Ar。清扫气体O2使得在第一次清扫后能立即激励等离子体。5秒钟后停止清扫气体的流动。第一清扫会完全去除在下一步形成等离子之前尚未吸附的钨(W)。
在第一清扫完成之后(步骤116),将堆叠件200暴露于由第二反应物气体形成的等离子体(步骤120)。堆叠件200和室保持在150℃以下的温度。提供第二反应物气体。在该示例中,第二反应物气体是O2。通过以60MHz频率,在范围为200W至20kW的功率下提供激发能,使第二反应物气体形成等离子体。在范围为200W至50kW的功率下,以100kHz至27MHz的频率提供偏置RF信号。3秒钟后,等离子体熄灭。
在将堆叠件200暴露于由第二反应物气体形成的等离子体之后(步骤120),提供第二清扫(步骤124)以清除剩余的等离子体离子自由基。在该示例中,通过在没有足够的RF功率形成等离子体的情况下使第二反应物气体流入等离子体处理室中来提供第二清扫。第二反应物气体用于清扫剩余的等离子体。其他实施方案可以具有其他清扫气体。一些实施方案可以停止RF功率。5秒钟后停止清扫气体的流动。第二清扫从等离子体处理室中完全去除等离子体离子自由基。然后重复原子层沉积循环。在该示例中,原子层沉积工艺(步骤108)执行3至100个循环。
图2D是在提供多个循环的原子层沉积工艺(步骤108)以在特征216的侧壁上形成保护膜224之后的堆叠件200的截面图。在该示例中,保护膜224包括钨氧化物。保护膜224未按比例绘制。由于原子层沉积工艺(步骤108)使用等离子体代替无等离子体热处理,因此保护膜224不如使用无等离子体热处理沉积的膜保形。另外,保护膜224的质量可能不如使用无等离子体热处理沉积的膜的质量高。因为保护膜224不是保形的,所以在该实施方案中,保护膜224不延伸到特征216的底部。
在完成原子层沉积工艺(步骤108)之后,进一步蚀刻特征216(步骤128)。用于将特征进一步蚀刻到蚀刻层208中的配方的示例提供5-50mTorr的压强。RF功率以60MHz的频率提供2kW-8kW的功率,以及以400kHz的频率提供4kW-25kW的功率。RF功率在这些功率电平之间被脉冲化。提供蚀刻气体。蚀刻气体包含O2、碳氟化合物和/或氢氟碳化合物。通过RF功率将蚀刻气体形成为蚀刻等离子体。图2E是在特征216被进一步蚀刻之后的堆叠件200的截面图。
如果特征的蚀刻未完成(步骤132)(即,特征未蚀刻至最终深度),则该过程返回至原子层沉积工艺(步骤108)。重复原子层沉积工艺(步骤108)。图2F是在重复原子层沉积工艺(步骤108)并且形成新的保护膜228之后的堆叠件200的截面图。由于使用等离子体形成新的保护膜228,所以新的保护膜不是保形的。
进一步蚀刻特征216(步骤128)。重复原子层沉积工艺(步骤108)和进一步蚀刻(步骤128)的循环,直到特征216的蚀刻完成(步骤132)。图2G是在将特征216的蚀刻蚀刻到最终深度之后的堆叠件200的截面图。
以上实施方案提供了通过在原子层沉积工艺中使用等离子体来防止或减少特征翘曲的侧壁钝化(步骤108)。如果使用热原子层沉积工艺沉积钨,则将使用高于250℃的堆叠件或室温度。高于250℃的温度可能会损坏正在形成的半导体设备。使用等离子体沉积含钨的保护膜的原子层沉积工艺(步骤108)提供了较不保形且质量较低的保护膜。然而,已经发现含钨的非保形保护膜足以防止或减少侧壁翘曲。
在多种实施方案中,以小于100℃的堆叠件或室温度执行原子层沉积工艺(步骤108)。在多种实施方案中,由第二反应物气体形成的等离子体提供氧化或氮化。如果来自第二反应物气体的等离子体提供氧化,则在多种实施方案中,第二反应物气体包含含氧组分,例如氧(O2)、臭氧(O3)、羰基硫(COS)、二氧化碳(CO2)、二氧化硫(SO2)或一氧化碳(CO)中的至少一种。另外,可以将氩气(Ar)或氪气(Kr)用作载气。如果来自第二反应物气体的等离子体提供氮化,则第二反应物气体包含含氮组分,例如氮(N2)或氨(NH3)中的至少一种。另外,可以将Ar或Kr用作载气。如果第二反应物气体包含N2,则第二反应物气体可以进一步包含H2。
在多种实施方案中,硬掩模可以由非晶碳、掺杂硼的碳、掺杂硼的硅、掺杂金属的碳或多晶硅形成。在多种实施方案中,蚀刻层208是基于氧化硅的介电层。在多种实施方案中,蚀刻层208是不同材料层的堆叠件。在多种实施方案中,蚀刻层208中的至少一层是介电材料层。在多种实施方案中,原子层沉积工艺(步骤108)提供了不保形的并且没有到达特征216的底部的保护膜228。在多种实施方案中,RF功率可以是连续波。在其他实施方案中,RF功率可以是脉冲功率。在多种实施方案中,脉冲RF功率可以具有介于100Hz和5kHz之间的脉冲重复频率。在多种实施方案中,脉冲RF功率可以具有介于5%至95%之间的占空比。
另外,由于原子层沉积工艺(步骤108)使用等离子体来代替热处理,因此原子层沉积工艺(步骤108)可以在与蚀刻工艺(步骤128)相同的等离子体处理室中原位进行。通过提供原位原子层沉积工艺(步骤108),由于所有步骤均在同一等离子体处理室中进行,因此生产率更高。
在示例性实施方案中,图3是可以用于实施方案中的蚀刻反应器的示意图。在一个或多个实施方案中,等离子体处理室300包括气体分配板306,该气体分配板306在蚀刻室349内提供气体入口和静电卡盘(ESC)308,该蚀刻室349被室壁352包围。在蚀刻室349内,堆叠件200位于ESC 308上方。ESC 308也是衬底支撑件。边缘环309围绕ESC 308。气体源310通过气体分配板306连接到蚀刻室349。在该示例中,气体源310包括蚀刻剂气体源312、WF6气体源316和反应物气体源318。ESC温度控制器350连接到冷却器314。在该实施方案中,冷却器314向ESC308中或附近的通道315提供冷却剂,以冷却ESC 308。射频(RF)源330向下部电极提供RF功率。在该实施方案中,ESC 308是下部电极。在示例性实施方案中,400kHz和60MHz电源构成RF源330。在该实施方案中,上电极、气体分配板306接地。在该实施方案中,为每个频率提供一个发生器。在其他实施方案中可以使用RF源和电极的其他布置。控制器335可控制地连接到RF源330、排放泵320和气体源310。这种蚀刻室的一个示例是由LamResearch Corporation(Fremont,CA)制造的蚀刻系统。处理室可以是CCP(电容耦合等离子体)反应器或ICP(感应耦合等离子体)反应器。
图4是示出了计算机系统400的高级框图,该计算机系统400适于实现在实施方案中使用的控制器335。计算机系统可以具有多种物理形式,其范围从集成电路、印刷电路板以及小型手持设备到巨型超级计算机。计算机系统400包括一个或者多个处理器402,并且进一步可以包括电子显示装置406(用于显示图形、文本以及其他数据)、主存储器404(例如,随机存储器(RAM))、存储设备408(例如,硬盘驱动器)、可移动存储设备410(例如,光盘驱动器)、用户接口设备412(例如,键盘、触摸屏、小键盘、鼠标或者其他定位装置等)以及通信接口414(例如,无线网络接口)。通信接口414使得软件和数据能通过链路在计算机系统400和外部设备之间传输。系统还可以包括通信基础设施416(例如,通信总线、交叉棒(cross-over bar)、或者网络),前述的设备/模块被连接于该通信基础设施414。
经由通信接口414传输的信息可以是能通过通信链路由通信接口414接收的信号的形式,所述信号是例如电子的、电磁的、光的、或者其他的信号,所述通信链路携带信号并且可以是使用电线或电缆、光纤、电话线、蜂窝电话链路、射频链路、和/或其他通信通道实现的通信链路。利用这样的通信接口,可预期,一个或者多个处理器402可以自网络接收信息或者可以在实施上述方法步骤的过程中向网络输出信息。另外,方法实施方案可以仅在处理器上执行或者可以与远程处理器结合在诸如因特网之类的网络上执行,所述远程处理器共享部分处理。
术语“非暂态计算机可读介质”一般用来指诸如主存储器、辅助存储器、移动存储装置、以及存储设备(例如硬盘、闪存、硬盘驱动存储器、CD-ROM以及其他形式的永久性存储器)之类的介质,并且不应被解释为涵盖诸如载波或者信号之类的暂时性主题。计算机代码的示例包括机器代码,例如由编译器产生的机器代码,以及包括使用解释器由计算机执行的更高级代码的文件。计算机可读介质还可以是通过体现在载波中的计算机数据信号传输并且表示为可由处理器执行的指令序列的计算机代码。
虽然已经根据几个示例性的实施方案描述了本公开,但是存在落在本公开的范围内的改变、修改、置换和各种替代等同方案。还应当注意,存在实现本公开的方法和装置的许多替代方式。因此,以下所附权利要求旨在被解释为包括落在本公开的真实精神和范围内的所有这样的改变、修改、置换和各种替代等同方案。
Claims (18)
1.一种在堆叠件中蚀刻特征的方法,所述堆叠件包括在衬底上的介电材料,所述方法包括:
(a)由蚀刻气体产生蚀刻等离子体,将所述堆叠件暴露于所述蚀刻等离子体,并且部分地蚀刻所述堆叠件中的特征;
(b)在(a)之后提供原子层沉积工艺以在侧壁上沉积保护膜,所述原子层沉积工艺包括多个循环,其中每个循环包括:
(i)将所述堆叠件暴露于包含WF6的第一反应物气体,其中所述第一反应物气体被吸附到所述堆叠件上;以及
(ii)将所述堆叠件暴露于由第二反应物气体形成的等离子体,其中由所述第二反应物气体形成的所述等离子体与吸附的第一反应物气体反应以在所述堆叠件上方形成保护膜;以及
(c)至少重复一次(a)-(b)。
2.根据权利要求1所述的方法,其中,所述提供所述原子层沉积工艺还包括将堆叠件温度保持在150℃以下。
3.根据权利要求1所述的方法,其中,所述第二反应物气体包括含氧组分或含氮组分中的至少一种。
4.根据权利要求1所述的方法,其中,所述第二反应物气体包括COS、CO2、CO、SO2、O2、N2、NH3或O3中的至少一种。
5.根据权利要求1所述的方法,其中,所述堆叠件包括SiO2。
6.根据权利要求5所述的方法,其中,所述堆叠件还包括硬掩模。
7.根据权利要求6所述的方法,其中,所述硬掩模包括非晶碳、掺杂硼的碳、掺杂硼的硅、掺杂金属的碳或多晶硅中的一种或多种。
8.根据权利要求1所述的方法,其中,所述提供所述原子层沉积工艺执行2至100个循环。
9.根据权利要求1所述的方法,其中,每个循环还包括:
在将所述堆叠件暴露于所述第一反应物气体之后且将所述堆叠件暴露于由所述第二反应物气体形成的所述等离子体之前,清扫所述第一反应物气体;以及
在将所述堆叠件暴露于由所述第二反应物气体形成的所述等离子体之后,清扫由所述第二反应物气体形成的所述等离子体。
10.根据权利要求1所述的方法,其中将所述堆叠件暴露于所述第一反应物气体是无等离子体步骤。
11.根据权利要求1所述的方法,其中,步骤(a)-(c)是原位进行的。
12.一种用于蚀刻堆叠件中的特征的装置,其包括:
处理室;
所述处理室内的衬底支撑件;
气体入口,其用于向所述处理室提供气体;
气体源,其用于将所述气体提供给气体入口,其中,所述气体源包括:
蚀刻气体源;
WF6气体源;和
反应物气体源;
排放泵,其用于从所述处理室抽出气体;
电极,其用于在所述处理室中提供RF功率;
至少一个电源,其用于向所述电极提供功率;和
控制器,其能控制地连接至所述气体源和所述至少一个电源,其中,所述控制器包括:
至少一个处理器;和
计算机可读介质,其包括用于通过第一多个循环执行蚀刻堆叠件的计算机代码,其中所述第一多个循环中的每一个包括:
部分地蚀刻所述堆叠件;
通过原子层沉积,经由提供第二多个循环而在所述堆叠件上沉积层,其中所述第二多个循环中的每个循环包括:
使含WF6的气体从所述WF6气体源流动;
将所述含WF6的气体吸附到所述堆叠件上;
停止所述含WF6的气体的流动;以及
将所述堆叠件暴露于来自所述反应物气体源的反应物气体的等离子体中,其中所述等离子体将吸附的所述含WF6的气体转化为原子层沉积层。
13.根据权利要求12所述的装置,其还包括用于冷却所述衬底支撑件的冷却器。
14.根据权利要求12所述的装置,其中,所述计算机可读介质还包括用于将所述衬底支撑件冷却至不超过150℃的温度的计算机代码。
15.根据权利要求12所述的装置,其中,所述使含WF6的气体流动是无等离子体步骤。
16.根据权利要求12所述的装置,其中,所述反应物气体源是COS、CO2、CO、SO2、O2、N2、NH3或O3中的至少一种的源。
17.根据权利要求12所述的装置,其中,将所述提供所述原子层沉积工艺执行2至100个循环。
18.根据权利要求12所述的方法,其中,所述第二多个循环中的每个循环还包括:
在停止所述含WF6的气体的流动之后且将所述堆叠件暴露于由所述第二反应物气体形成的所述等离子体之前,清扫所述第一反应物气体;以及
在将所述堆叠件暴露于由所述第二反应物气体形成的所述等离子体之后,清扫由所述第二反应物气体形成的所述等离子体。
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