JP2018524814A5 - - Google Patents
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- Publication number
- JP2018524814A5 JP2018524814A5 JP2017567078A JP2017567078A JP2018524814A5 JP 2018524814 A5 JP2018524814 A5 JP 2018524814A5 JP 2017567078 A JP2017567078 A JP 2017567078A JP 2017567078 A JP2017567078 A JP 2017567078A JP 2018524814 A5 JP2018524814 A5 JP 2018524814A5
- Authority
- JP
- Japan
- Prior art keywords
- silicon oxide
- oxide layer
- patterned
- features
- selectively
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 30
- 229910052814 silicon oxide Inorganic materials 0.000 claims 30
- 238000000034 method Methods 0.000 claims 19
- 238000000151 deposition Methods 0.000 claims 17
- 230000008021 deposition Effects 0.000 claims 9
- 239000000758 substrate Substances 0.000 claims 9
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims 8
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims 6
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 6
- 238000000137 annealing Methods 0.000 claims 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims 3
- 229910052710 silicon Inorganic materials 0.000 claims 3
- 239000010703 silicon Substances 0.000 claims 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 3
- 238000005530 etching Methods 0.000 claims 2
- 238000001039 wet etching Methods 0.000 claims 2
- 238000010884 ion-beam technique Methods 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201562185388P | 2015-06-26 | 2015-06-26 | |
| US62/185,388 | 2015-06-26 | ||
| PCT/US2016/035302 WO2016209570A1 (en) | 2015-06-26 | 2016-06-01 | Selective deposition of silicon oxide films |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2018524814A JP2018524814A (ja) | 2018-08-30 |
| JP2018524814A5 true JP2018524814A5 (enExample) | 2019-07-11 |
| JP6920219B2 JP6920219B2 (ja) | 2021-08-18 |
Family
ID=57586127
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017567078A Active JP6920219B2 (ja) | 2015-06-26 | 2016-06-01 | 酸化ケイ素膜の選択的堆積 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US10176980B2 (enExample) |
| JP (1) | JP6920219B2 (enExample) |
| KR (1) | KR102377376B1 (enExample) |
| CN (2) | CN107660307B (enExample) |
| TW (1) | TWI716414B (enExample) |
| WO (1) | WO2016209570A1 (enExample) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10176984B2 (en) * | 2017-02-14 | 2019-01-08 | Lam Research Corporation | Selective deposition of silicon oxide |
| US10242866B2 (en) | 2017-03-08 | 2019-03-26 | Lam Research Corporation | Selective deposition of silicon nitride on silicon oxide using catalytic control |
| US10043656B1 (en) * | 2017-03-10 | 2018-08-07 | Lam Research Corporation | Selective growth of silicon oxide or silicon nitride on silicon surfaces in the presence of silicon oxide |
| US9911595B1 (en) | 2017-03-17 | 2018-03-06 | Lam Research Corporation | Selective growth of silicon nitride |
| US10559461B2 (en) | 2017-04-19 | 2020-02-11 | Lam Research Corporation | Selective deposition with atomic layer etch reset |
| JP7203515B2 (ja) * | 2017-06-06 | 2023-01-13 | アプライド マテリアルズ インコーポレイテッド | 連続した堆積－エッチング－処理方法を使用した酸化ケイ素及び窒化ケイ素のボトムアップ成長 |
| US10460930B2 (en) | 2017-11-22 | 2019-10-29 | Lam Research Corporation | Selective growth of SiO2 on dielectric surfaces in the presence of copper |
| WO2019169335A1 (en) | 2018-03-02 | 2019-09-06 | Lam Research Corporation | Selective deposition using hydrolysis |
| US10354859B1 (en) * | 2018-03-14 | 2019-07-16 | Sandisk Technologies Llc | Three-dimensional resistive random access memory device containing selectively grown amorphous silicon-containing barrier and method of making the same |
| CN113227909B (zh) | 2018-12-20 | 2025-07-04 | 朗姆研究公司 | 抗蚀剂的干式显影 |
| TWI869221B (zh) | 2019-06-26 | 2025-01-01 | 美商蘭姆研究公司 | 利用鹵化物化學品的光阻顯影 |
| KR20250007037A (ko) | 2020-01-15 | 2025-01-13 | 램 리써치 코포레이션 | 포토레지스트 부착 및 선량 감소를 위한 하부층 |
| CN116626993A (zh) | 2020-07-07 | 2023-08-22 | 朗姆研究公司 | 用于图案化辐射光致抗蚀剂图案化的集成干燥工艺 |
| JP7562696B2 (ja) | 2020-11-13 | 2024-10-07 | ラム リサーチ コーポレーション | フォトレジストのドライ除去用プロセスツール |
| KR20240042456A (ko) * | 2021-09-29 | 2024-04-02 | 가부시키가이샤 코쿠사이 엘렉트릭 | 기판 처리 방법, 반도체 장치의 제조 방법, 기판 처리 장치 및 프로그램 |
| US11978625B2 (en) | 2021-10-18 | 2024-05-07 | Applied Materials, Inc. | Methods of forming metal nitride films |
| US12474640B2 (en) | 2023-03-17 | 2025-11-18 | Lam Research Corporation | Integration of dry development and etch processes for EUV patterning in a single process chamber |
Family Cites Families (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08213382A (ja) * | 1995-02-02 | 1996-08-20 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
| JPH11307625A (ja) * | 1998-04-24 | 1999-11-05 | Hitachi Ltd | 半導体装置およびその製造方法 |
| US6413826B2 (en) * | 1999-04-07 | 2002-07-02 | Vantis Corporation | Gate insulator process for nanometer MOSFETS |
| US6235354B1 (en) * | 1999-11-01 | 2001-05-22 | United Microelectronics Corp. | Method of forming a level silicon oxide layer on two regions of different heights on a semiconductor wafer |
| JP3344397B2 (ja) * | 2000-01-21 | 2002-11-11 | 日本電気株式会社 | 半導体装置の製造方法 |
| US6429092B1 (en) | 2000-06-19 | 2002-08-06 | Infineon Technologies Ag | Collar formation by selective oxide deposition |
| US6541401B1 (en) * | 2000-07-31 | 2003-04-01 | Applied Materials, Inc. | Wafer pretreatment to decrease rate of silicon dioxide deposition on silicon nitride compared to silicon substrate |
| US6444528B1 (en) | 2000-08-16 | 2002-09-03 | Fairchild Semiconductor Corporation | Selective oxide deposition in the bottom of a trench |
| US6503851B2 (en) | 2000-08-31 | 2003-01-07 | Micron Technology, Inc. | Use of linear injectors to deposit uniform selective ozone TEOS oxide film by pulsing reactants on and off |
| US6368986B1 (en) | 2000-08-31 | 2002-04-09 | Micron Technology, Inc. | Use of selective ozone TEOS oxide to create variable thickness layers and spacers |
| KR100378183B1 (ko) * | 2000-09-18 | 2003-03-29 | 삼성전자주식회사 | 반도체 메모리 장치 및 그의 제조 방법 |
| TW479315B (en) * | 2000-10-31 | 2002-03-11 | Applied Materials Inc | Continuous depostiton process |
| KR100413829B1 (ko) * | 2001-03-23 | 2003-12-31 | 삼성전자주식회사 | 트렌치 격리 구조 및 그 형성 방법 |
| US6566227B2 (en) * | 2001-08-13 | 2003-05-20 | Infineon Technologies Ag | Strap resistance using selective oxidation to cap DT poly before STI etch |
| US6762127B2 (en) * | 2001-08-23 | 2004-07-13 | Yves Pierre Boiteux | Etch process for dielectric materials comprising oxidized organo silane materials |
| US7625603B2 (en) * | 2003-11-14 | 2009-12-01 | Robert Bosch Gmbh | Crack and residue free conformal deposited silicon oxide with predictable and uniform etching characteristics |
| US7790633B1 (en) * | 2004-10-26 | 2010-09-07 | Novellus Systems, Inc. | Sequential deposition/anneal film densification method |
| US8232176B2 (en) * | 2006-06-22 | 2012-07-31 | Applied Materials, Inc. | Dielectric deposition and etch back processes for bottom up gapfill |
| US20080299775A1 (en) * | 2007-06-04 | 2008-12-04 | Applied Materials, Inc. | Gapfill extension of hdp-cvd integrated process modulation sio2 process |
| US7745350B2 (en) * | 2007-09-07 | 2010-06-29 | Applied Materials, Inc. | Impurity control in HDP-CVD DEP/ETCH/DEP processes |
| US8012887B2 (en) * | 2008-12-18 | 2011-09-06 | Applied Materials, Inc. | Precursor addition to silicon oxide CVD for improved low temperature gapfill |
| JP2011066303A (ja) * | 2009-09-18 | 2011-03-31 | Elpida Memory Inc | 半導体装置の製造方法 |
| CN102754193A (zh) * | 2010-01-06 | 2012-10-24 | 应用材料公司 | 使用氧化物衬垫的可流动电介质 |
| JP2012028420A (ja) * | 2010-07-20 | 2012-02-09 | Toshiba Corp | 半導体装置およびその製造方法 |
| CN102479742A (zh) * | 2010-11-30 | 2012-05-30 | 中国科学院微电子研究所 | 用于集成电路的衬底及其形成方法 |
| US8716154B2 (en) * | 2011-03-04 | 2014-05-06 | Applied Materials, Inc. | Reduced pattern loading using silicon oxide multi-layers |
| WO2013048872A1 (en) * | 2011-09-26 | 2013-04-04 | Applied Materials, Inc. | Pretreatment and improved dielectric coverage |
| US8906759B2 (en) * | 2013-02-25 | 2014-12-09 | International Business Machines Corporation | Silicon nitride gate encapsulation by implantation |
| US8853019B1 (en) * | 2013-03-13 | 2014-10-07 | Globalfoundries Inc. | Methods of forming a semiconductor device with a nanowire channel structure by performing an anneal process |
| CN103839868A (zh) * | 2014-02-21 | 2014-06-04 | 上海华力微电子有限公司 | 浅沟槽隔离结构的制作方法 |
| CN104091780A (zh) * | 2014-07-25 | 2014-10-08 | 上海华力微电子有限公司 | 自对准sti的形成方法 |
-
2016
- 2016-06-01 CN CN201680028403.4A patent/CN107660307B/zh active Active
- 2016-06-01 CN CN202111288200.8A patent/CN114121605B/zh active Active
- 2016-06-01 WO PCT/US2016/035302 patent/WO2016209570A1/en not_active Ceased
- 2016-06-01 JP JP2017567078A patent/JP6920219B2/ja active Active
- 2016-06-01 KR KR1020187002530A patent/KR102377376B1/ko active Active
- 2016-06-17 US US15/185,282 patent/US10176980B2/en active Active
- 2016-06-24 TW TW105119859A patent/TWI716414B/zh active
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