JP6920219B2 - 酸化ケイ素膜の選択的堆積 - Google Patents

酸化ケイ素膜の選択的堆積 Download PDF

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JP6920219B2
JP6920219B2 JP2017567078A JP2017567078A JP6920219B2 JP 6920219 B2 JP6920219 B2 JP 6920219B2 JP 2017567078 A JP2017567078 A JP 2017567078A JP 2017567078 A JP2017567078 A JP 2017567078A JP 6920219 B2 JP6920219 B2 JP 6920219B2
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silicon oxide
oxide layer
patterned
substrate
selectively
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JP2018524814A5 (enExample
JP2018524814A (ja
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プラミット マンナ，
プラミット マンナ，
アブヒジット バス マリック，
アブヒジット バス マリック，
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Applied Materials Inc
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Applied Materials Inc
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    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
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    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76816—Aspects relating to the layout of the pattern or to the size of vias or trenches
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C—CHEMISTRY; METALLURGY
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
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    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
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    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
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    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
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  • Manufacturing & Machinery (AREA)
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  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Chemical Vapour Deposition (AREA)
JP2017567078A 2015-06-26 2016-06-01 酸化ケイ素膜の選択的堆積 Active JP6920219B2 (ja)

Applications Claiming Priority (3)

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US201562185388P 2015-06-26 2015-06-26
US62/185,388 2015-06-26
PCT/US2016/035302 WO2016209570A1 (en) 2015-06-26 2016-06-01 Selective deposition of silicon oxide films

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JP2018524814A JP2018524814A (ja) 2018-08-30
JP2018524814A5 JP2018524814A5 (enExample) 2019-07-11
JP6920219B2 true JP6920219B2 (ja) 2021-08-18

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US (1) US10176980B2 (enExample)
JP (1) JP6920219B2 (enExample)
KR (1) KR102377376B1 (enExample)
CN (2) CN107660307B (enExample)
TW (1) TWI716414B (enExample)
WO (1) WO2016209570A1 (enExample)

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JP7203515B2 (ja) * 2017-06-06 2023-01-13 アプライド マテリアルズ インコーポレイテッド 連続した堆積－エッチング－処理方法を使用した酸化ケイ素及び窒化ケイ素のボトムアップ成長
US10460930B2 (en) 2017-11-22 2019-10-29 Lam Research Corporation Selective growth of SiO2 on dielectric surfaces in the presence of copper
WO2019169335A1 (en) 2018-03-02 2019-09-06 Lam Research Corporation Selective deposition using hydrolysis
US10354859B1 (en) * 2018-03-14 2019-07-16 Sandisk Technologies Llc Three-dimensional resistive random access memory device containing selectively grown amorphous silicon-containing barrier and method of making the same
CN113227909B (zh) 2018-12-20 2025-07-04 朗姆研究公司 抗蚀剂的干式显影
TWI869221B (zh) 2019-06-26 2025-01-01 美商蘭姆研究公司 利用鹵化物化學品的光阻顯影
KR20250007037A (ko) 2020-01-15 2025-01-13 램 리써치 코포레이션 포토레지스트 부착 및 선량 감소를 위한 하부층
CN116626993A (zh) 2020-07-07 2023-08-22 朗姆研究公司 用于图案化辐射光致抗蚀剂图案化的集成干燥工艺
JP7562696B2 (ja) 2020-11-13 2024-10-07 ラム リサーチ コーポレーション フォトレジストのドライ除去用プロセスツール
KR20240042456A (ko) * 2021-09-29 2024-04-02 가부시키가이샤 코쿠사이 엘렉트릭 기판 처리 방법, 반도체 장치의 제조 방법, 기판 처리 장치 및 프로그램
US11978625B2 (en) 2021-10-18 2024-05-07 Applied Materials, Inc. Methods of forming metal nitride films
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JP2018524814A (ja) 2018-08-30
TWI716414B (zh) 2021-01-21
CN114121605B (zh) 2025-09-30
WO2016209570A1 (en) 2016-12-29
US20170004974A1 (en) 2017-01-05
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