JP2018190946A - イメージセンサー - Google Patents
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- Publication number
- JP2018190946A JP2018190946A JP2017145445A JP2017145445A JP2018190946A JP 2018190946 A JP2018190946 A JP 2018190946A JP 2017145445 A JP2017145445 A JP 2017145445A JP 2017145445 A JP2017145445 A JP 2017145445A JP 2018190946 A JP2018190946 A JP 2018190946A
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- Prior art keywords
- photoelectric conversion
- layer
- metal layer
- conversion element
- present
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Optics & Photonics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Thin Film Transistor (AREA)
Abstract
【解決手段】イメージセンサーが提供される。イメージセンサーは、互いに隣接する第一領域と第二領域を有する基板、および、基板の第一領域上に設置される第一光電変換素子を有する。第一光電変換素子は、基板上に形成される第一金属層と、第一金属層上に形成される第一光電変換層、および、第一光電変換層上に形成される第二金属層、を有する。
【選択図】図1B
Description
102…基板102
104…画素アレイ
106…領域
108…第一光電変換素子
114…第二金属層
116…透過層
118…マイクロレンズ
120…第二光電変換素子
122…誘電層
124…上面
126…上面
128…被覆層
130…第一追加層
132…第三金属層
134…パッド
136…第二追加層
138…第四金属層
302…基板
304…画素アレイ
306…画素領域
308…光電変換素子
310…底部金属層
312…光電変換層
314…上部金属層
316…透過層
318…マイクロレンズ
340…電線
342…導電パッド
T…厚さ
P…画素
Claims (13)
- イメージセンサーであって、
互いに隣接する第一領域、および、第二領域を有する基板、および、
前記基板の前記第一領域上に設置される第一光電変換素子、を有し、
前記第一光電変換素子は、
前記基板上に形成される第一金属層と、
前記第一金属層上に形成される第一光電変換層、および、
前記第一光電変換層上に形成される第二金属層、
を有することを特徴とするイメージセンサー。 - 前記第一光電変換層は、ドープ半導体層、あるいは、量子薄膜を有し、前記第一金属層、および、前記第二金属層は、独立して、Ag、Au、Cu、W、Al、Mo、Ti、Pt、Ir、Ni、Cr、Rh、それらの合金、あるいは、それらの組み合わせを含むことを特徴とする請求項1に記載のイメージセンサー。
- 前記第一金属層の厚さは、前記第二金属層の厚さと等しい、あるいは、それより厚いことを特徴とする請求項1に記載のイメージセンサー。
- 前記基板の前記第二領域中に設置され、且つ、前記基板中に埋め込まれる第二光電変換素子と、
前記第二光電変換素子上に設置される高誘電率の誘電層、および、
前記高誘電率の誘電層上に設置される透過層、
をさらに有することを特徴とする請求項1に記載のイメージセンサー。 - 前記第二光電変換素子は、前記第一光電変換素子の前記第一金属層から隔てられ、前記透過層は、前記第一光電変換素子上に延伸し、前記第一光電変換素子の上面は、前記透過層の上面より高いことを特徴とする請求項4に記載のイメージセンサー。
- 前記高誘電率の誘電層は、前記基板の前記第一領域と前記第二領域両方の上に形成されることを特徴とする請求項4に記載のイメージセンサー。
- 前記第一光電変換素子上に設置され、且つ、半導体材料、あるいは、誘電材料を有する被覆層、および、
前記第一光電変換素子上に設置されるマイクロレンズ、
をさらに有することを特徴とする請求項1に記載のイメージセンサー。 - 前記第一光電変換素子は、さらに、
前記第二金属層上に設置される第一追加光電変換層と、
前記第一追加光電変換層上に設置される第三金属層と、
前記第三金属層上に設置される第二追加光電変換層、および、
前記第二追加光電変換層上に設置される第四金属層、
を有することを特徴とする請求項1に記載のイメージセンサー。 - イメージセンサーであって、
第一領域、および、第二領域を有し、前記第二領域が前記第一領域に隣接する基板と、
前記基板の前記第一領域上に設置され、
前記基板上に形成される第一底部金属層と、
前記第一底部金属層上に形成され、第一厚さを有する第一光電変換層と、
前記第一光電変換層上に形成される第一上部金属層、を有する第一光電変換素子、および、
前記基板の前記第二領域上に設置され、
前記基板上に形成される第二底部金属層と、
前記第二底部金属層上に形成され、第二厚さを有する第二光電変換層と、
前記第二光電変換層上に形成される第二上部金属層、を有する第二光電変換素子、
を有し、 前記第一厚さが、前記第二厚さより大きいイメージセンサー。 - 前記基板の前記第二領域に隣接する第三領域上に設置される第三光電変換素子をさらに有し、前記第三光電変換素子は、
前記基板上に形成される第三底部金属層と、
前記第三底部金属層上に形成され、第三厚さを有する第三光電変換層、および、
前記第三光電変換層上に形成される第三上部金属層、を有し、
前記第二厚さは、前記第三厚さより大きいことを特徴とする請求項9に記載のイメージセンサー。 - 前記基板の前記第三領域に隣接する第四領域上に設置される第四光電変換素子をさらに有し、前記第四光電変換素子は、
前記基板上に形成される第四底部金属層と、
前記第四底部金属層上に形成され、第四厚さを有する第四光電変換層、および、
前記第四光電変換層上に形成される第四上部金属層、を有し、
前記第三厚さは、前記第四厚さより大きいことを特徴とする請求項10に記載のイメージセンサー。 - 前記第一光電変換素子上に設置される第一マイクロレンズと、
前記第二光電変換素子上に設置される第二マイクロレンズと、
前記第三光電変換素子上に設置される第三マイクロレンズ、および、
前記第四光電変換素子上に設置される第四マイクロレンズ、
をさらに有することを特徴とする請求項11に記載のイメージセンサー。 - 前記第一光電変換素子の前記第一上部金属層の上面は、前記第二光電変換素子の前記第二上部金属層の上面より高く、前記第二光電変換素子は、さらに、前記第二光電変換層と前記第二上部金属層間に設置される透過層を有し、前記第一光電変換素子の前記第一上部金属層の上面は、前記第二光電変換素子の前記第二上部金属層の上面と実質上、同一平面であることを特徴とする請求項9に記載のイメージセンサー。
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