JPWO2020058919A1 - 撮像装置、その作製方法および電子機器 - Google Patents
撮像装置、その作製方法および電子機器 Download PDFInfo
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Abstract
Description
図2A、図2Bは、画素回路を説明する図である。
図3Aは、ローリングシャッタ方式を説明する図である。図3Bは、グローバルシャッタ方式を説明する図である。
図4A、図4Bは、撮像装置の作製方法を説明する図である。
図5A乃至図5Cは、撮像装置の作製方法を説明する図である。
図6A、図6Bは、撮像装置の作製方法を説明する図である。
図7A乃至図7Cは、撮像装置の作製方法を説明する図である。
図8A、図8Bは、撮像装置の作製方法を説明する図である。
図9A乃至図9Dは、撮像装置の作製方法を説明する図である。
図10A乃至図10Cは、撮像装置を説明する図である。
図11A、図11Bは、画素回路の動作を説明するタイミングチャートである。
図12A、図12Bは、画素回路を説明する図である。
図13は、撮像装置を説明するブロック図である。
図14A、図14Bは、撮像装置の画素の構成を説明する図である。
図15A乃至図15Dは、トランジスタを説明する図である。
図16A1乃至図16A3、図16B1乃至図16B3は、撮像装置を収めたパッケージ、カメラモジュールを説明する斜視図である。
図17A乃至図17Cは、電子機器を説明する図である。
図18A乃至図18Cは、電子機器を説明する図である。
本実施の形態では、本発明の一態様である撮像装置およびその作製方法について、図面を参照して説明する。
図1は、本発明の一態様の撮像装置を説明する図である。撮像装置は、層11、層12、層13、および層14を有する。
図2Aは、層11が有する光電変換デバイスおよび層12のデバイス形成層が有するトランジスタ等で構成される画素回路の一例を説明する回路図である。画素回路は、光電変換デバイス101と、トランジスタ103と、トランジスタ104と、トランジスタ105と、トランジスタ106と、キャパシタ108を有することができる。なお、キャパシタ108を設けない構成としてもよい。
図3Aはローリングシャッタ方式の動作方法を模式化した図であり、図3Bはグローバルシャッタ方式を模式化した図である。Enはn列目(nは自然数)の露光(蓄積動作)、Rnはn列目の読み出し動作を表している。図3A、図3Bでは、1行目からM行目(Mは自然数)までの動作を示している。
次に、本発明の一態様の撮像装置の作製方法について説明を行う。作製方法は第1の方法と第2の方法があり、いずれも貼り合わせ工法を用いる。
第1の方法は、単結晶シリコン基板に設けた光電変換デバイス上にトランジスタ等を作製し、支持基板を貼り合わせる方法である。
第2の方法は、単結晶シリコン基板に設けた光電変換デバイスと、支持基板上に設けたトランジスタ等とを貼り合わせる方法である。なお、以下の説明において、第1の方法と重複する説明は省略する。
第1の方法または第2の方法で作製した光電変換デバイス101にさらに加工を行ってもよい。例えば、図9A乃至図9Dに示すように、光電変換デバイス101の領域28および光吸収層となる領域を画素ごとに分断してもよい。
第1の方法、第2の方法で作製した構成および変形例として示した構成に対して、さらに構成要素を付加してもよい。例えば、図10Aに示すように、領域28上に保護層として絶縁層38を設けることができる。絶縁層38には、広い波長範囲の光に対して透光性を有する酸化シリコン膜などを用いることができる。また、パッシベーション膜として作用する窒化シリコン膜を積層する構成としてもよい。また、反射防止膜として、酸化ハフニウムなどの誘電体膜を積層する構成としてもよい。
本実施の形態では、本発明の一態様の撮像装置の構造例などについて詳細を説明する。
本実施の形態では、本発明の一態様に係る撮像装置を用いることができる電子機器の一例を説明する。本発明の一態様の撮像装置は赤外光透過フィルタを不要とする構成とすることもでき、薄型化が容易で、様々な機器に組み込みやすくなる。なお、赤外光透過フィルタは、撮像装置に組み込まず、電子機器の光路に組み込んでもよい。
Claims (11)
- 単結晶シリコン基板と、支持基板と、を有する撮像装置の作製方法であって、
前記単結晶シリコン基板の第1の面側に前記単結晶シリコン基板の導電型とは逆の導電型の領域を設けて光電変換デバイスを形成し、
前記光電変換デバイス上に金属酸化物をチャネル形成領域に有し、かつ前記光電変換デバイスと電気的に接続するトランジスタを形成し、
前記トランジスタ上に第1の絶縁層を形成し、
前記支持基板上に第2の絶縁層を形成し、
前記第1の絶縁層の表面と前記第2の絶縁層の表面との結合を行い、
前記単結晶シリコン基板の第1の面と対向する面を研削および研磨して前記光電変換デバイスの光吸収層を薄層化する撮像装置の作製方法。 - 単結晶シリコン基板と、支持基板と、を有する撮像装置の作製方法であって、
前記単結晶シリコン基板の第1の面側に前記単結晶シリコン基板の導電型とは逆の導電型の領域を設けて光電変換デバイスを形成し、
前記光電変換デバイス上に第1の絶縁層および前記光電変換デバイスと電気的に接続する第1の導電層を形成し、
前記支持基板上に金属酸化物をチャネル形成領域に有するトランジスタを形成し、
前記トランジスタ上に第2の絶縁層および前記トランジスタと電気的に接続する第2の導電層を形成し、
前記第1の絶縁層の表面と前記第2の絶縁層の表面との結合、および前記第1の導電層の表面と前記第2の導電層の表面との結合を行い、
前記単結晶シリコン基板の第1の面と対向する面を研削および研磨して前記光電変換デバイスの光吸収層を薄層化する撮像装置の作製方法。 - 請求項1または2において、
さらに、前記単結晶シリコン基板の研磨した面側に前記単結晶シリコン基板と同じ導電型であって、
前記単結晶シリコン基板よりもキャリア濃度の高い領域を設けて前記光電変換デバイスを形成する撮像装置の作製方法。 - 請求項1乃至3のいずれか一項において、
前記光電変換デバイスと接する第3の絶縁層を形成し、
前記第3の絶縁層を介して前記光電変換デバイスと重なるように、光学フィルタ層を形成する撮像装置の作製方法。 - 請求項4において、前記光学フィルタ層は、可視光を遮蔽し赤外光を透過する層である撮像装置の作製方法。
- 請求項1乃至5のいずれか一項において、
前記金属酸化物は、Inと、Znと、M(MはAl、Ti、Ga、Sn、Y、Zr、La、Ce、NdまたはHf)と、を有する撮像装置の作製方法。 - 第1の層と、第2の層と、第3の層と、第4の層と、が当該順序で積層された撮像装置であって、
前記第1の層、前記第2の層、前記第3の層および前記第4の層は、それぞれが互いに重なる領域を有し、
前記第1の層は、光学フィルタ層を有し、
前記第2の層は、単結晶シリコンを有し、
前記第3の層は、デバイス形成層を有し、
前記第4の層は、支持基板を有し、
前記第2の層は、前記単結晶シリコンを光吸収層とする光電変換デバイスを有し、
前記第3の層は、金属酸化物をチャネル形成領域に有するトランジスタを有し、
前記光電変換デバイスと前記トランジスタは電気的に接続され、
前記光電変換デバイスは、前記光学フィルタ層を透過した光を受光する撮像装置。 - 請求項7において、前記光学フィルタ層は、可視光を遮蔽し赤外光を透過する層である撮像装置。
- 請求項7または8において、
前記デバイス形成層は、第1のトランジスタと、第2のトランジスタと、第3のトランジスタと、第4のトランジスタと、キャパシタと、を有し、
前記光電変換デバイスの一方の電極は、前記第1のトランジスタのソースまたはドレインの一方と電気的に接続され、
前記第1のトランジスタのソースまたはドレインの他方は、前記第2のトランジスタのソースまたはドレインの一方と電気的に接続され、
前記第2のトランジスタのソースまたはドレインの一方は、前記キャパシタの一方の電極と電気的に接続され、
前記キャパシタの一方の電極は、前記第3のトランジスタのゲートと電気的に接続され、
前記第3のトランジスタのソースまたはドレインの一方は、前記第4のトランジスタのソースまたはドレインの一方と電気的に接続される撮像装置。 - 請求項7乃至9のいずれか一項において、
前記金属酸化物は、Inと、Znと、M(MはAl、Ti、Ga、Ge、Sn、Y、Zr、La、Ce、NdまたはHf)と、を有する撮像装置。 - 請求項7乃至10のいずれか一項に記載の撮像装置と光源と、を有する電子機器。
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