JP7350753B2 - 撮像装置および電子機器 - Google Patents
撮像装置および電子機器 Download PDFInfo
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- JP7350753B2 JP7350753B2 JP2020540870A JP2020540870A JP7350753B2 JP 7350753 B2 JP7350753 B2 JP 7350753B2 JP 2020540870 A JP2020540870 A JP 2020540870A JP 2020540870 A JP2020540870 A JP 2020540870A JP 7350753 B2 JP7350753 B2 JP 7350753B2
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Description
図2A、図2B、図2Cは、画素アレイを説明する図である。
図3A、図3B、図3Cは、画素回路を説明する図である。
図4A、図4B、図4Cは、画素回路を説明する図である。
図5A、図5B、図5Cは、画素回路を説明する図である。
図6A、図6B、図6Cは、画素回路を説明する図である。
図7Aは、ローリングシャッタ方式を説明する図である。図7Bは、グローバルシャッタ方式を説明する図である。
図8A、図8Bは、画素回路の動作を説明するタイミングチャートである。
図9A、図9Bは、画素回路を説明する図である。
図10Aは、撮像装置の画素の構成を説明する図である。図10B、図10Cは、光電変換デバイスの構成を説明する図である。図10Dは、発光デバイスの構成を説明する図である。
図11A、図11Bは、撮像装置の画素の構成を説明する図である。
図12A、図12B、図12C、図12Dは、トランジスタを説明する図である。
図13A、図13B、図13Cは、撮像装置を収めたパッケージの斜視図である。
図14A、図14B、図14Cは、電子機器を説明する図である。
本実施の形態では、本発明の一態様である撮像装置について、図面を参照して説明する。
本実施の形態では、本発明の一態様の撮像装置の構造例などについて説明する。
本実施の形態では、本発明の一態様に係る撮像装置を用いることができる電子機器の一例を説明する。
Claims (9)
- 第1の層と、第2の層と、を有する撮像装置であって、
前記第1の層は、前記第2の層と重なる領域を有し、
前記第1の層は、マトリクス状に複数の画素回路を有し、
前記第2の層は、マトリクス状に赤外光を発する複数の発光デバイスを有し、
前記画素回路は、光電変換デバイスと、トランジスタと、を有し、
前記トランジスタのゲート電極は、前記光電変換デバイスよりも前記第2の層に近くに設けられ、
前記発光デバイスは、第1の電極と、第2の電極と、発光層と、を有し、
前記発光層は、前記第1の電極と前記第2の電極との間に設けられ、
前記発光デバイスは、前記第1の層とは逆側に光を射出し、
前記光電変換デバイスは、前記第1の電極と重ならない領域を有する撮像装置(但し、前記発光デバイスが、表示素子の場合を除く)。 - 第1の層と、第2の層と、を有する撮像装置であって、
前記第1の層は、前記第2の層と重なる領域を有し、
前記第1の層は、マトリクス状に複数の画素回路を有し、
前記第2の層は、マトリクス状に赤外光を発する複数の発光デバイスを有し、
前記発光デバイスは、第1の電極と、第2の電極と、発光層と、を有し、
前記発光層は、前記第1の電極と前記第2の電極との間に設けられ、
前記画素回路は、光電変換デバイスと、第1のトランジスタと、第2のトランジスタと、第3のトランジスタと、第4のトランジスタと、キャパシタと、を有し、
前記第1のトランジスタのゲート電極は、前記光電変換デバイスよりも前記第2の層に近くに設けられ、
前記第2のトランジスタのゲート電極は、前記光電変換デバイスよりも前記第2の層に近くに設けられ、
前記第3のトランジスタのゲート電極は、前記光電変換デバイスよりも前記第2の層に近くに設けられ、
前記第4のトランジスタのゲート電極は、前記光電変換デバイスよりも前記第2の層に近くに設けられ、
前記光電変換デバイスの一方の電極は、前記第1のトランジスタのソースまたはドレインの一方と電気的に接続され、
前記第1のトランジスタのソースまたはドレインの他方は、前記第2のトランジスタのソースまたはドレインの一方と電気的に接続され、
前記第2のトランジスタのソースまたはドレインの一方は、前記キャパシタの一方の電極と電気的に接続され、
前記キャパシタの一方の電極は、前記第3のトランジスタのゲートと電気的に接続され、
前記第3のトランジスタのソースまたはドレインの一方は、前記第4のトランジスタのソースまたはドレインの一方と電気的に接続され、
前記発光デバイスは、前記第1の層とは逆側に光を射出し、
前記光電変換デバイスは、前記第1の電極と重ならない領域を有する撮像装置(但し、前記発光デバイスが、表示素子の場合を除く)。 - 請求項2において、
前記第2のトランジスタのソースまたはドレインの他方と、前記第3のトランジスタのソースまたはドレインの他方は電気的に接続され、
前記第3のトランジスタのソースまたはドレインの他方と、前記発光デバイスの一方の電極は電気的に接続されている撮像装置。 - 第1の層と、第2の層と、を有する撮像装置であって、
前記第1の層は、前記第2の層と重なる領域を有し、
前記第1の層は、マトリクス状に複数の画素回路を有し、
前記第2の層は、マトリクス状に赤外光を発する複数の発光デバイスを有し、
前記発光デバイスは、第1の電極と、第2の電極と、発光層と、を有し、
前記発光層は、前記第1の電極と前記第2の電極との間に設けられ、
前記画素回路は、光電変換デバイスと、第1のトランジスタと、第2のトランジスタと、第3のトランジスタと、第4のトランジスタと、キャパシタと、を有し、
前記第1のトランジスタのゲート電極は、前記光電変換デバイスよりも前記第2の層に近くに設けられ、
前記第2のトランジスタのゲート電極は、前記光電変換デバイスよりも前記第2の層に近くに設けられ、
前記第3のトランジスタのゲート電極は、前記光電変換デバイスよりも前記第2の層に近くに設けられ、
前記第4のトランジスタのゲート電極は、前記光電変換デバイスよりも前記第2の層に近くに設けられ、
前記光電変換デバイスの一方の電極は、前記第1のトランジスタのソースまたはドレインの一方と電気的に接続され、
前記第1のトランジスタのソースまたはドレインの他方は、前記第2のトランジスタのソースまたはドレインの一方と電気的に接続され、
前記第2のトランジスタのソースまたはドレインの一方は、前記キャパシタの一方の電極と電気的に接続され、
前記キャパシタの一方の電極は、前記第3のトランジスタのゲートと電気的に接続され、
前記第3のトランジスタのソースまたはドレインの一方は、前記第4のトランジスタのソースまたはドレインの一方と電気的に接続され、
前記光電変換デバイスの他方の電極と、前記第3のトランジスタのソースまたはドレインの他方は電気的に接続され、
前記第3のトランジスタのソースまたはドレインの他方と、前記発光デバイスの一方の電極は電気的に接続され、
前記発光デバイスは、前記第1の層とは逆側に光を射出し、
前記光電変換デバイスは、前記第1の電極と重ならない領域を有する撮像装置(但し、前記発光デバイスが、表示素子の場合を除く)。 - 請求項2乃至4のいずれか一項において、
さらに第5のトランジスタを有し、
前記第5のトランジスタのソースまたはドレインの一方は、前記発光デバイスの一方の電極と電気的に接続され、
前記第5のトランジスタのソースまたはドレインの他方は、前記第3のトランジスタのソースまたはドレインの他方と電気的に接続されている撮像装置。 - 請求項1乃至4のいずれか一項において、
前記光電変換デバイスは、前記第2の電極および前記発光層と重なる領域を有する撮像装置。 - 請求項1乃至4のいずれか一項において、
前記第2の電極は、赤外光に透光性を有する透光性導電膜で形成されている撮像装置。 - 請求項1乃至4のいずれか一項において、
チャネル形成領域に金属酸化物を有するトランジスタを有し、
前記金属酸化物は、Inと、Znと、M(MはAl、Ti、Ga、Sn、Y、Zr、La、Ce、NdまたはHf)と、を有する撮像装置。 - 請求項1乃至4のいずれか一項に記載の撮像装置と、表示装置と、を有する電子機器。
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