JP2018142698A5 - - Google Patents

Download PDF

Info

Publication number
JP2018142698A5
JP2018142698A5 JP2018021500A JP2018021500A JP2018142698A5 JP 2018142698 A5 JP2018142698 A5 JP 2018142698A5 JP 2018021500 A JP2018021500 A JP 2018021500A JP 2018021500 A JP2018021500 A JP 2018021500A JP 2018142698 A5 JP2018142698 A5 JP 2018142698A5
Authority
JP
Japan
Prior art keywords
sno
layer
semiconductor substrate
etching
exposed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2018021500A
Other languages
English (en)
Japanese (ja)
Other versions
JP2018142698A (ja
JP7190814B2 (ja
Filing date
Publication date
Application filed filed Critical
Publication of JP2018142698A publication Critical patent/JP2018142698A/ja
Publication of JP2018142698A5 publication Critical patent/JP2018142698A5/ja
Priority to JP2022194568A priority Critical patent/JP7483839B2/ja
Application granted granted Critical
Publication of JP7190814B2 publication Critical patent/JP7190814B2/ja
Priority to JP2024074161A priority patent/JP2024102202A/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2018021500A 2017-02-13 2018-02-09 エアギャップの形成方法 Active JP7190814B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2022194568A JP7483839B2 (ja) 2017-02-13 2022-12-06 エアギャップの形成方法
JP2024074161A JP2024102202A (ja) 2017-02-13 2024-05-01 エアギャップの形成方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201762458464P 2017-02-13 2017-02-13
US62/458,464 2017-02-13

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2022194568A Division JP7483839B2 (ja) 2017-02-13 2022-12-06 エアギャップの形成方法

Publications (3)

Publication Number Publication Date
JP2018142698A JP2018142698A (ja) 2018-09-13
JP2018142698A5 true JP2018142698A5 (enExample) 2020-10-08
JP7190814B2 JP7190814B2 (ja) 2022-12-16

Family

ID=63105400

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2018021500A Active JP7190814B2 (ja) 2017-02-13 2018-02-09 エアギャップの形成方法
JP2022194568A Active JP7483839B2 (ja) 2017-02-13 2022-12-06 エアギャップの形成方法
JP2024074161A Withdrawn JP2024102202A (ja) 2017-02-13 2024-05-01 エアギャップの形成方法

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2022194568A Active JP7483839B2 (ja) 2017-02-13 2022-12-06 エアギャップの形成方法
JP2024074161A Withdrawn JP2024102202A (ja) 2017-02-13 2024-05-01 エアギャップの形成方法

Country Status (6)

Country Link
US (4) US11088019B2 (enExample)
JP (3) JP7190814B2 (enExample)
KR (3) KR102722138B1 (enExample)
CN (3) CN112242345B (enExample)
SG (1) SG10201801132VA (enExample)
TW (2) TW202401570A (enExample)

Families Citing this family (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12051589B2 (en) * 2016-06-28 2024-07-30 Lam Research Corporation Tin oxide thin film spacers in semiconductor device manufacturing
US9824893B1 (en) 2016-06-28 2017-11-21 Lam Research Corporation Tin oxide thin film spacers in semiconductor device manufacturing
KR102722138B1 (ko) 2017-02-13 2024-10-24 램 리써치 코포레이션 에어 갭들을 생성하는 방법
US10546748B2 (en) 2017-02-17 2020-01-28 Lam Research Corporation Tin oxide films in semiconductor device manufacturing
CN111771264A (zh) 2018-01-30 2020-10-13 朗姆研究公司 在图案化中的氧化锡心轴
CN111886689A (zh) 2018-03-19 2020-11-03 朗姆研究公司 无倒角通孔集成方案
US10861953B2 (en) 2018-04-30 2020-12-08 Taiwan Semiconductor Manufacturing Company, Ltd. Air spacers in transistors and methods forming same
US20190385828A1 (en) * 2018-06-19 2019-12-19 Lam Research Corporation Temperature control systems and methods for removing metal oxide films
US20190390341A1 (en) * 2018-06-26 2019-12-26 Lam Research Corporation Deposition tool and method for depositing metal oxide films on organic materials
US10700180B2 (en) * 2018-07-27 2020-06-30 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure and manufacturing method thereof
US11043373B2 (en) * 2018-07-31 2021-06-22 Taiwan Semiconductor Manufacturing Company, Ltd. Interconnect system with improved low-k dielectrics
US10868142B2 (en) 2018-10-31 2020-12-15 Taiwan Semiconductor Manufacturing Company, Ltd. Gate spacer structure and method of forming same
CN113039486B (zh) 2018-11-14 2024-11-12 朗姆研究公司 可用于下一代光刻法中的硬掩模制作方法
CN112805813B (zh) * 2018-11-22 2024-08-13 三井化学株式会社 半导体元件中间体及半导体元件中间体的制造方法
CN109437278A (zh) * 2018-12-04 2019-03-08 复旦大学 一种基于氧化铜-氧化锡核壳纳米线结构的气敏纳米材料、制备工艺及其应用
CN113227909B (zh) 2018-12-20 2025-07-04 朗姆研究公司 抗蚀剂的干式显影
US10804262B2 (en) 2019-02-22 2020-10-13 International Business Machines Corporation Cointegration of FET devices with decoupling capacitor
US10892328B2 (en) 2019-03-04 2021-01-12 International Business Machines Corporation Source/drain extension regions and air spacers for nanosheet field-effect transistor structures
US11798838B2 (en) 2019-03-19 2023-10-24 Intel Corporation Capacitance reduction for semiconductor devices based on wafer bonding
KR102813067B1 (ko) * 2019-06-20 2025-05-26 도쿄엘렉트론가부시키가이샤 선택적 붕소 질화물 또는 알루미늄 질화물 증착에 의한 고도로 선택적인 실리콘 산화물/실리콘 질화물 에칭
TWI869221B (zh) 2019-06-26 2025-01-01 美商蘭姆研究公司 利用鹵化物化學品的光阻顯影
KR20250008974A (ko) * 2019-06-27 2025-01-16 램 리써치 코포레이션 교번하는 에칭 및 패시베이션 프로세스
JP7618601B2 (ja) * 2019-06-28 2025-01-21 ラム リサーチ コーポレーション 複数のパターニング放射吸収元素および／または垂直組成勾配を備えたフォトレジスト
CN110504482A (zh) * 2019-08-08 2019-11-26 南开大学 固态锂电池石榴石型固态电解质材料的制备及表面处理方法与应用
US11038038B2 (en) * 2019-08-13 2021-06-15 Micron Technology, Inc. Transistors and methods of forming transistors
US10825722B1 (en) * 2019-08-29 2020-11-03 Nanya Technology Corporation Method of manufacturing a semiconductor structure
DE102019133935B4 (de) * 2019-09-30 2022-11-03 Taiwan Semiconductor Manufacturing Co. Ltd. Verfahren zum ausbilden von transistorabstandshal-terstrukturen
US11094796B2 (en) 2019-09-30 2021-08-17 Taiwan Semiconductor Manufacturing Co., Ltd. Transistor spacer structures
KR20250007037A (ko) 2020-01-15 2025-01-13 램 리써치 코포레이션 포토레지스트 부착 및 선량 감소를 위한 하부층
US11289585B2 (en) * 2020-02-27 2022-03-29 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices and methods of formation
US11367778B2 (en) * 2020-03-31 2022-06-21 Taiwan Semiconductor Manufacturing Company Limited MOSFET device structure with air-gaps in spacer and methods for forming the same
TWI787817B (zh) * 2020-05-28 2022-12-21 台灣積體電路製造股份有限公司 半導體元件的製造方法
US12416863B2 (en) 2020-07-01 2025-09-16 Applied Materials, Inc. Dry develop process of photoresist
US11621172B2 (en) 2020-07-01 2023-04-04 Applied Materials, Inc. Vapor phase thermal etch solutions for metal oxo photoresists
CN116626993A (zh) 2020-07-07 2023-08-22 朗姆研究公司 用于图案化辐射光致抗蚀剂图案化的集成干燥工艺
US11456246B2 (en) * 2020-07-21 2022-09-27 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure and methods of forming the same
US11508615B2 (en) * 2020-07-30 2022-11-22 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure and methods of forming the same
CN115699266B (zh) * 2020-08-31 2025-11-07 株式会社力森诺科 等离子体蚀刻方法和半导体元件的制造方法
JP7562696B2 (ja) 2020-11-13 2024-10-07 ラム リサーチ コーポレーション フォトレジストのドライ除去用プロセスツール
US11374093B2 (en) * 2020-11-25 2022-06-28 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure and methods of forming the same
US12176412B2 (en) * 2021-03-26 2024-12-24 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices and methods of manufacturing thereof
US11563105B2 (en) * 2021-04-14 2023-01-24 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices and methods of manufacturing thereof
CN115376921A (zh) * 2021-05-21 2022-11-22 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法
US12336248B2 (en) 2021-10-25 2025-06-17 Taiwan Semiconductor Manufacturing Co., Ltd. Non-conformal gate oxide formation on FinFET
US20240072157A1 (en) * 2022-08-24 2024-02-29 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and forming method thereof
US20240387621A1 (en) * 2023-05-17 2024-11-21 Nanya Technology Corporation Semiconductor device and method of manufacturing thereof
CN116453941B (zh) * 2023-06-16 2023-08-22 粤芯半导体技术股份有限公司 一种栅极结构及制作方法

Family Cites Families (175)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE758597A (fr) * 1969-11-10 1971-04-16 Western Electric Co Procede de morsure de l'oxyde d'etain
JPS5165366A (ja) * 1974-12-03 1976-06-05 Sharp Kk Sankabutsutomeidodenmakuno etsuchinguhoho
JPS5826603B2 (ja) 1976-09-01 1983-06-03 日電バリアン株式会社 透明導電膜のプラズマエツチング方法
US4778562A (en) 1984-08-13 1988-10-18 General Motors Corporation Reactive ion etching of tin oxide films using neutral reactant gas containing hydrogen
US4544444A (en) * 1984-08-15 1985-10-01 General Motors Corporation Reactive ion etching of tin oxide films using silicon tetrachloride reactant gas
JPS62136579A (ja) * 1985-12-09 1987-06-19 Victor Co Of Japan Ltd エツチング方法
JPS62179774A (ja) 1986-02-04 1987-08-06 Fujitsu Ltd イメ−ジセンサの製造方法
US4708766A (en) 1986-11-07 1987-11-24 Texas Instruments Incorporated Hydrogen iodide etch of tin oxide
US4750980A (en) 1986-11-07 1988-06-14 Texas Instruments Incorporated Process for etching tin oxide
JP2644758B2 (ja) 1987-07-22 1997-08-25 株式会社日立製作所 レジスト除去方法及び装置
US4824763A (en) 1987-07-30 1989-04-25 Ekc Technology, Inc. Triamine positive photoresist stripping composition and prebaking process
JP3001891B2 (ja) * 1987-10-01 2000-01-24 グンゼ株式会社 透明導電膜のエッチング方法及びその装置
JP3001894B2 (ja) * 1988-09-30 2000-01-24 グンゼ株式会社 多層薄膜素子のエッチング方法及びその装置
FR2640809B1 (fr) 1988-12-19 1993-10-22 Chouan Yannick Procede de gravure d'une couche d'oxyde metallique et depot simultane d'un film de polymere, application de ce procede a la fabrication d'un transistor
US4878993A (en) 1988-12-22 1989-11-07 North American Philips Corporation Method of etching thin indium tin oxide films
JP2521815B2 (ja) 1989-08-17 1996-08-07 沖電気工業株式会社 透明導電膜のエッチング方法
US5032221A (en) * 1990-05-07 1991-07-16 Eastman Kodak Company Etching indium tin oxide
US5171401A (en) * 1990-06-04 1992-12-15 Eastman Kodak Company Plasma etching indium tin oxide
US5318664A (en) 1990-06-25 1994-06-07 General Electric Company Patterning of indium-tin oxide via selective reactive ion etching
JPH05267701A (ja) 1992-03-18 1993-10-15 Taiyo Yuden Co Ltd 酸化錫透明導電膜のパターニング方法
RU2053584C1 (ru) * 1992-05-26 1996-01-27 Научно-исследовательский институт измерительных систем Способ формирования топологического рисунка пленки диоксида олова
JPH06151379A (ja) 1992-11-09 1994-05-31 Hitachi Ltd Ｉｔｏのエッチング方法
US5286337A (en) 1993-01-25 1994-02-15 North American Philips Corporation Reactive ion etching or indium tin oxide
DE4337309A1 (de) 1993-08-26 1995-03-02 Leybold Ag Verfahren und Vorrichtung zum Ätzen von dünnen Schichten, vorzugsweise von Indium-Zinn-Oxid-Schichten
KR0135165B1 (ko) 1993-10-15 1998-04-22 윤정환 다층레지스트를 이용한 패턴형성방법
US5723366A (en) * 1994-09-28 1998-03-03 Sanyo Electric Co. Ltd. Dry etching method, method of fabricating semiconductor device, and method of fabricating liquid crystal display device
US5607602A (en) 1995-06-07 1997-03-04 Applied Komatsu Technology, Inc. High-rate dry-etch of indium and tin oxides by hydrogen and halogen radicals such as derived from HCl gas
TW365029B (en) * 1995-09-28 1999-07-21 Mitsui Chemicals Inc Dry processing gas
JP4127869B2 (ja) 1995-09-28 2008-07-30 三井化学株式会社 乾式エッチング方法
US5843277A (en) 1995-12-22 1998-12-01 Applied Komatsu Technology, Inc. Dry-etch of indium and tin oxides with C2H5I gas
US20020031920A1 (en) 1996-01-16 2002-03-14 Lyding Joseph W. Deuterium treatment of semiconductor devices
JP3587622B2 (ja) 1996-06-20 2004-11-10 三井化学株式会社 エッチングガス
US5667631A (en) 1996-06-28 1997-09-16 Lam Research Corporation Dry etching of transparent electrodes in a low pressure plasma reactor
US6036876A (en) 1997-06-25 2000-03-14 Applied Komatsu Technology, Inc. Dry-etching of indium and tin oxides
TW328624B (en) 1997-07-15 1998-03-21 Powerchip Semiconductor Corp The manufacturing method for MOS with gate-side air-gap structure
TW387111B (en) * 1997-08-08 2000-04-11 Mitsui Chemicals Inc Dry etching method
US20010008227A1 (en) 1997-08-08 2001-07-19 Mitsuru Sadamoto Dry etching method of metal oxide/photoresist film laminate
JPH11111679A (ja) * 1997-10-07 1999-04-23 Mitsui Chem Inc 反応性イオンエッチング装置および反応性イオンエッチング方法
GB9726511D0 (en) * 1997-12-13 1998-02-11 Philips Electronics Nv Thin film transistors and electronic devices comprising such
US6368978B1 (en) 1999-03-04 2002-04-09 Applied Materials, Inc. Hydrogen-free method of plasma etching indium tin oxide
US6326301B1 (en) 1999-07-13 2001-12-04 Motorola, Inc. Method for forming a dual inlaid copper interconnect structure
KR100327346B1 (ko) 1999-07-20 2002-03-06 윤종용 선택적 폴리머 증착을 이용한 플라즈마 식각방법 및 이를이용한 콘택홀 형성방법
JP4554011B2 (ja) * 1999-08-10 2010-09-29 ルネサスエレクトロニクス株式会社 半導体集積回路装置の製造方法
KR100447263B1 (ko) 1999-12-30 2004-09-07 주식회사 하이닉스반도체 식각 폴리머를 이용한 반도체 소자의 제조방법
US6789910B2 (en) * 2000-04-12 2004-09-14 Semiconductor Energy Laboratory, Co., Ltd. Illumination apparatus
WO2001082355A2 (en) 2000-04-25 2001-11-01 Tokyo Electron Limited Method and apparatus for plasma cleaning of workpieces
US6580475B2 (en) * 2000-04-27 2003-06-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
US6416822B1 (en) 2000-12-06 2002-07-09 Angstrom Systems, Inc. Continuous method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD)
US6428859B1 (en) 2000-12-06 2002-08-06 Angstron Systems, Inc. Sequential method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD)
US6750394B2 (en) * 2001-01-12 2004-06-15 Sharp Kabushiki Kaisha Thin-film solar cell and its manufacturing method
FR2821862B1 (fr) * 2001-03-07 2003-11-14 Saint Gobain Procede de gravure de couches deposees sur des substrats transparents du type substrat verrier
US6623653B2 (en) 2001-06-12 2003-09-23 Sharp Laboratories Of America, Inc. System and method for etching adjoining layers of silicon and indium tin oxide
JP2003068155A (ja) * 2001-08-30 2003-03-07 Ulvac Japan Ltd 透明導電性膜のドライエッチング方法
US7547635B2 (en) 2002-06-14 2009-06-16 Lam Research Corporation Process for etching dielectric films with improved resist and/or etch profile characteristics
KR100542736B1 (ko) 2002-08-17 2006-01-11 삼성전자주식회사 원자층 증착법을 이용한 산화막의 형성방법 및 이를이용한 반도체 장치의 캐패시터 형성방법
AU2003275615A1 (en) 2002-11-01 2004-05-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US6953705B2 (en) 2003-07-22 2005-10-11 E. I. Du Pont De Nemours And Company Process for removing an organic layer during fabrication of an organic electronic device
KR100574952B1 (ko) 2003-11-04 2006-05-02 삼성전자주식회사 스플릿 게이트형 비휘발성 반도체 메모리 소자 제조방법
US7435610B2 (en) 2003-12-31 2008-10-14 Chung Yuan Christian University Fabrication of array pH sensitive EGFET and its readout circuit
JP2005217240A (ja) 2004-01-30 2005-08-11 Matsushita Electric Ind Co Ltd ドライエッチング装置およびドライエッチング方法
JP4655939B2 (ja) 2004-02-09 2011-03-23 旭硝子株式会社 透明電極の製造方法
US7910288B2 (en) 2004-09-01 2011-03-22 Micron Technology, Inc. Mask material conversion
US7338907B2 (en) 2004-10-04 2008-03-04 Sharp Laboratories Of America, Inc. Selective etching processes of silicon nitride and indium oxide thin films for FeRAM device applications
US7355672B2 (en) * 2004-10-04 2008-04-08 Asml Netherlands B.V. Method for the removal of deposition on an optical element, method for the protection of an optical element, device manufacturing method, apparatus including an optical element, and lithographic apparatus
US7868304B2 (en) * 2005-02-07 2011-01-11 Asml Netherlands B.V. Method for removal of deposition on an optical element, lithographic apparatus, device manufacturing method, and device manufactured thereby
EP1707952A1 (de) 2005-03-31 2006-10-04 Micronas GmbH Gassensitiver Feldeffekttransistor mit Luftspalt und Verfahren zu dessen Herstellung
DE102005031469A1 (de) 2005-07-04 2007-01-11 Merck Patent Gmbh Medium zur Ätzung von oxidischen, transparenten, leitfähigen Schichten
JP5096669B2 (ja) 2005-07-06 2012-12-12 ルネサスエレクトロニクス株式会社 半導体集積回路装置の製造方法
US7561247B2 (en) * 2005-08-22 2009-07-14 Asml Netherlands B.V. Method for the removal of deposition on an optical element, method for the protection of an optical element, device manufacturing method, apparatus including an optical element, and lithographic apparatus
US7393736B2 (en) 2005-08-29 2008-07-01 Micron Technology, Inc. Atomic layer deposition of Zrx Hfy Sn1-x-y O2 films as high k gate dielectrics
US8317929B2 (en) 2005-09-16 2012-11-27 Asml Netherlands B.V. Lithographic apparatus comprising an electrical discharge generator and method for cleaning an element of a lithographic apparatus
US7372058B2 (en) * 2005-09-27 2008-05-13 Asml Netherlands B.V. Ex-situ removal of deposition on an optical element
US7405160B2 (en) 2005-12-13 2008-07-29 Tokyo Electron Limited Method of making semiconductor device
KR20070076721A (ko) 2006-01-19 2007-07-25 삼성전자주식회사 웨이퍼의 박막 형성 공정 개선 방법
JP4609335B2 (ja) 2006-02-02 2011-01-12 富士電機システムズ株式会社 炭化珪素半導体基板のドライエッチング方法
US20080061030A1 (en) 2006-09-13 2008-03-13 Taiwan Semiconductor Manufacturing Co., Ltd. Methods for patterning indium tin oxide films
US7709056B2 (en) 2007-05-16 2010-05-04 Uchicago Argonne, Llc Synthesis of transparent conducting oxide coatings
US7833893B2 (en) 2007-07-10 2010-11-16 International Business Machines Corporation Method for forming conductive structures
KR100955265B1 (ko) 2007-08-31 2010-04-30 주식회사 하이닉스반도체 반도체 소자의 미세패턴 형성방법
US20100320457A1 (en) 2007-11-22 2010-12-23 Masahito Matsubara Etching solution composition
CN101889325B (zh) * 2007-12-06 2014-05-07 因特瓦克公司 用于衬底的两侧溅射蚀刻的系统和方法
US8247315B2 (en) * 2008-03-17 2012-08-21 Semiconductor Energy Laboratory Co., Ltd. Plasma processing apparatus and method for manufacturing semiconductor device
US8435608B1 (en) 2008-06-27 2013-05-07 Novellus Systems, Inc. Methods of depositing smooth and conformal ashable hard mask films
FR2936651B1 (fr) 2008-09-30 2011-04-08 Commissariat Energie Atomique Dispositif optoelectronique organique et son procede d'encapsulation.
JP5446648B2 (ja) 2008-10-07 2014-03-19 信越化学工業株式会社 パターン形成方法
KR20100044029A (ko) 2008-10-21 2010-04-29 주식회사 하이닉스반도체 반도체 소자의 제조 방법
KR20100052598A (ko) 2008-11-11 2010-05-20 삼성전자주식회사 미세 패턴의 형성방법
US8492282B2 (en) 2008-11-24 2013-07-23 Micron Technology, Inc. Methods of forming a masking pattern for integrated circuits
CN103456794B (zh) * 2008-12-19 2016-08-10 株式会社半导体能源研究所 晶体管的制造方法
US9640396B2 (en) 2009-01-07 2017-05-02 Brewer Science Inc. Spin-on spacer materials for double- and triple-patterning lithography
WO2010134176A1 (ja) 2009-05-20 2010-11-25 株式会社 東芝 凹凸パターン形成方法
TWD134077S1 (zh) 2009-06-19 2010-04-01 林清智; 沙發
US8163094B1 (en) * 2009-07-23 2012-04-24 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Method to improve indium bump bonding via indium oxide removal using a multi-step plasma process
US8796483B2 (en) 2010-04-01 2014-08-05 President And Fellows Of Harvard College Cyclic metal amides and vapor deposition using them
US9892917B2 (en) * 2010-04-15 2018-02-13 Lam Research Corporation Plasma assisted atomic layer deposition of multi-layer films for patterning applications
US9390909B2 (en) 2013-11-07 2016-07-12 Novellus Systems, Inc. Soft landing nanolaminates for advanced patterning
US9287113B2 (en) * 2012-11-08 2016-03-15 Novellus Systems, Inc. Methods for depositing films on sensitive substrates
US8435901B2 (en) 2010-06-11 2013-05-07 Tokyo Electron Limited Method of selectively etching an insulation stack for a metal interconnect
US9487600B2 (en) 2010-08-17 2016-11-08 Uchicago Argonne, Llc Ordered nanoscale domains by infiltration of block copolymers
JP2012099517A (ja) 2010-10-29 2012-05-24 Sony Corp 半導体装置及び半導体装置の製造方法
KR101881181B1 (ko) 2010-11-04 2018-08-16 노벨러스 시스템즈, 인코포레이티드 탄탈륨의 이온 유도 원자층 증착
US8901016B2 (en) 2010-12-28 2014-12-02 Asm Japan K.K. Method of forming metal oxide hardmask
US9111775B2 (en) * 2011-01-28 2015-08-18 Semiconductor Energy Laboratory Co., Ltd. Silicon structure and manufacturing methods thereof and of capacitor including silicon structure
KR20120125102A (ko) 2011-05-06 2012-11-14 한국화학연구원 원자층 증착법을 이용한 주석산화물 박막의 제조방법
US9190316B2 (en) 2011-10-26 2015-11-17 Globalfoundries U.S. 2 Llc Low energy etch process for nitrogen-containing dielectric layer
TWI479663B (zh) 2011-12-22 2015-04-01 Au Optronics Corp 陣列基板及其製作方法
US8735993B2 (en) * 2012-01-31 2014-05-27 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET body contact and method of making same
JP6015893B2 (ja) * 2012-02-28 2016-10-26 国立研究開発法人産業技術総合研究所 薄膜トランジスタの製造方法
WO2013141232A1 (ja) * 2012-03-23 2013-09-26 三洋電機株式会社 太陽電池及びその製造方法
US8987047B2 (en) * 2012-04-02 2015-03-24 Samsung Display Co., Ltd. Thin film transistor, thin film transistor array panel including the same, and method of manufacturing the same
US10861978B2 (en) * 2012-04-02 2020-12-08 Samsung Display Co., Ltd. Display device
US9048294B2 (en) 2012-04-13 2015-06-02 Applied Materials, Inc. Methods for depositing manganese and manganese nitrides
US8916477B2 (en) 2012-07-02 2014-12-23 Novellus Systems, Inc. Polysilicon etch with high selectivity
CN104321853A (zh) 2012-07-10 2015-01-28 夏普株式会社 半导体元件的制造方法
WO2014039420A1 (en) 2012-09-04 2014-03-13 Matheson Tri-Gas, Inc. In-situ tco chamber clean
JP2014086500A (ja) 2012-10-22 2014-05-12 Tokyo Electron Ltd 銅層をエッチングする方法、及びマスク
TWI539626B (zh) 2012-12-21 2016-06-21 鴻海精密工業股份有限公司 發光二極體及其製造方法
US9153486B2 (en) 2013-04-12 2015-10-06 Lam Research Corporation CVD based metal/semiconductor OHMIC contact for high volume manufacturing applications
CN103199225B (zh) * 2013-04-23 2018-02-09 上海乾视通信技术有限公司 硅碳负极材料、其制备方法及一种锂离子电池
US9437443B2 (en) 2013-06-12 2016-09-06 Globalfoundries Inc. Low-temperature sidewall image transfer process using ALD metals, metal oxides and metal nitrides
JP6353636B2 (ja) 2013-06-21 2018-07-04 東京エレクトロン株式会社 酸化チタン膜の除去方法および除去装置
KR20150012540A (ko) 2013-07-25 2015-02-04 삼성디스플레이 주식회사 유기발광표시장치의 제조방법.
US9310684B2 (en) 2013-08-22 2016-04-12 Inpria Corporation Organometallic solution based high resolution patterning compositions
WO2015066709A1 (en) 2013-11-04 2015-05-07 Donaldson A Burl Direct electrical steam generation for downhole heavey oil stimulation
US9614053B2 (en) 2013-12-05 2017-04-04 Taiwan Semiconductor Manufacturing Company, Ltd. Spacers with rectangular profile and methods of forming the same
US9171703B2 (en) 2013-12-20 2015-10-27 Seagate Technology Llc Apparatus with sidewall protection for features
US9379010B2 (en) 2014-01-24 2016-06-28 Intel Corporation Methods for forming interconnect layers having tight pitch interconnect structures
US20170022607A1 (en) 2014-01-28 2017-01-26 Taiyo Yuden Chemical Technology Co., Ltd. Structure provided with carbon film and method for forming carbon film
US9385028B2 (en) 2014-02-03 2016-07-05 Applied Materials, Inc. Air gap process
US20150247238A1 (en) 2014-03-03 2015-09-03 Lam Research Corporation Rf cycle purging to reduce surface roughness in metal oxide and metal nitride films
US9269590B2 (en) 2014-04-07 2016-02-23 Applied Materials, Inc. Spacer formation
US9209038B2 (en) 2014-05-02 2015-12-08 GlobalFoundries, Inc. Methods for fabricating integrated circuits using self-aligned quadruple patterning
US9418889B2 (en) * 2014-06-30 2016-08-16 Lam Research Corporation Selective formation of dielectric barriers for metal interconnects in semiconductor devices
US9285673B2 (en) 2014-07-10 2016-03-15 Taiwan Semiconductor Manufacturing Company, Ltd. Assist feature for a photolithographic process
US9515156B2 (en) 2014-10-17 2016-12-06 Lam Research Corporation Air gap spacer integration for improved fin device performance
KR102264419B1 (ko) 2014-10-23 2021-06-11 인프리아 코포레이션 유기 금속 용액 기반의 고해상도 패터닝 조성물 및 상응하는 방법
US11114742B2 (en) 2014-11-25 2021-09-07 View, Inc. Window antennas
US9633867B2 (en) * 2015-01-05 2017-04-25 Lam Research Corporation Method and apparatus for anisotropic tungsten etching
TWI633596B (zh) 2015-01-14 2018-08-21 聯華電子股份有限公司 形成溝渠的方法
US9478433B1 (en) 2015-03-30 2016-10-25 Applied Materials, Inc. Cyclic spacer etching process with improved profile control
US9607834B2 (en) 2015-04-02 2017-03-28 Tokyo Electron Limited Trench and hole patterning with EUV resists using dual frequency capacitively coupled plasma (CCP)
US9806252B2 (en) * 2015-04-20 2017-10-31 Lam Research Corporation Dry plasma etch method to pattern MRAM stack
WO2016172116A1 (en) 2015-04-20 2016-10-27 Board Of Regents, The University Of Texas System Fabricating large area multi-tier nanostructures
US9870899B2 (en) 2015-04-24 2018-01-16 Lam Research Corporation Cobalt etch back
US10049892B2 (en) 2015-05-07 2018-08-14 Tokyo Electron Limited Method for processing photoresist materials and structures
SG10201604524PA (en) * 2015-06-05 2017-01-27 Lam Res Corp ATOMIC LAYER ETCHING OF GaN AND OTHER III-V MATERIALS
US9449843B1 (en) * 2015-06-09 2016-09-20 Applied Materials, Inc. Selectively etching metals and metal nitrides conformally
US10971372B2 (en) * 2015-06-26 2021-04-06 Tokyo Electron Limited Gas phase etch with controllable etch selectivity of Si-containing arc or silicon oxynitride to different films or masks
US9523148B1 (en) 2015-08-25 2016-12-20 Asm Ip Holdings B.V. Process for deposition of titanium oxynitride for use in integrated circuit fabrication
KR102346372B1 (ko) 2015-10-13 2021-12-31 인프리아 코포레이션 유기주석 옥사이드 하이드록사이드 패터닝 조성물, 전구체 및 패터닝
US9996004B2 (en) 2015-11-20 2018-06-12 Lam Research Corporation EUV photopatterning of vapor-deposited metal oxide-containing hardmasks
TWI661466B (zh) 2016-04-14 2019-06-01 日商東京威力科創股份有限公司 使用具有多種材料之一層的基板圖案化方法
US9824893B1 (en) 2016-06-28 2017-11-21 Lam Research Corporation Tin oxide thin film spacers in semiconductor device manufacturing
US12051589B2 (en) * 2016-06-28 2024-07-30 Lam Research Corporation Tin oxide thin film spacers in semiconductor device manufacturing
US9997369B2 (en) 2016-09-27 2018-06-12 International Business Machines Corporation Margin for fin cut using self-aligned triple patterning
US9859153B1 (en) * 2016-11-14 2018-01-02 Lam Research Corporation Deposition of aluminum oxide etch stop layers
CN108321079B (zh) 2017-01-16 2021-02-02 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法
KR102722138B1 (ko) 2017-02-13 2024-10-24 램 리써치 코포레이션 에어 갭들을 생성하는 방법
US10546748B2 (en) 2017-02-17 2020-01-28 Lam Research Corporation Tin oxide films in semiconductor device manufacturing
JP2018160556A (ja) * 2017-03-23 2018-10-11 三菱電機株式会社 薄膜トランジスタ基板、薄膜トランジスタ基板の製造方法、液晶表示装置、および薄膜トランジスタ
US10559461B2 (en) 2017-04-19 2020-02-11 Lam Research Corporation Selective deposition with atomic layer etch reset
US11374112B2 (en) 2017-07-19 2022-06-28 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US11075079B2 (en) 2017-11-21 2021-07-27 Taiwan Semiconductor Manufacturing Co., Ltd. Directional deposition for semiconductor fabrication
CN111771264A (zh) 2018-01-30 2020-10-13 朗姆研究公司 在图案化中的氧化锡心轴
CN111886689A (zh) 2018-03-19 2020-11-03 朗姆研究公司 无倒角通孔集成方案
US12074030B2 (en) 2018-05-08 2024-08-27 Sony Semiconductor Solutions Corporation Etching method of oxide semiconductor film, oxide semiconductor workpiece, and electronic device
SG11202009703QA (en) 2018-05-11 2020-10-29 Lam Res Corp Methods for making euv patternable hard masks
US20190390341A1 (en) 2018-06-26 2019-12-26 Lam Research Corporation Deposition tool and method for depositing metal oxide films on organic materials
US10867804B2 (en) * 2018-06-29 2020-12-15 Taiwan Semiconductor Manufacturing Company, Ltd. Patterning method for semiconductor device and structures resulting therefrom
US10840082B2 (en) * 2018-08-09 2020-11-17 Lam Research Corporation Method to clean SnO2 film from chamber
US10845704B2 (en) 2018-10-30 2020-11-24 Taiwan Semiconductor Manufacturing Co., Ltd. Extreme ultraviolet photolithography method with infiltration for enhanced sensitivity and etch resistance
KR20250008974A (ko) 2019-06-27 2025-01-16 램 리써치 코포레이션 교번하는 에칭 및 패시베이션 프로세스
TW202212012A (zh) 2020-06-15 2022-04-01 美商蘭姆研究公司 在腔室清潔中的錫氧化物的移除
US20230238238A1 (en) 2020-07-23 2023-07-27 Lam Research Corporation Advanced self aligned multiple patterning using tin oxide
US20220189771A1 (en) 2020-12-10 2022-06-16 Applied Materials, Inc. Underlayer film for semiconductor device formation

Similar Documents

Publication Publication Date Title
JP2018142698A5 (enExample)
JP7483839B2 (ja) エアギャップの形成方法
KR102447088B1 (ko) 반도체 디바이스 제작에서의 주석 옥사이드 막들
US10658181B2 (en) Method of spacer-defined direct patterning in semiconductor fabrication
TWI619144B (zh) 用於多重圖案化之利用可灰化硬遮罩間隙塡充的影像反轉
USRE47170E1 (en) Method of forming semiconductor patterns
US20180076042A1 (en) Borane mediated dehydrogenation process from silane and alkylsilane species for spacer and hardmask application
WO2020223011A1 (en) Atomic layer etch and selective deposition process for extreme ultraviolet lithography resist improvement
TW201835381A (zh) 藉由熱ald及peald沉積氧化物膜之方法
TW201622008A (zh) 用於自我對準接觸方案的金屬前犧牲介電質
TW202302902A (zh) 形成氮碳氧化矽薄膜的方法
KR20150053253A (ko) 진보된 패터닝을 위한 소프트 랜딩 나노적층물들
JP7602530B2 (ja) Ｍｒａｍパターニングのための不揮発性材料の化学エッチング
TWI893183B (zh) 基材處理方法
TWI705529B (zh) 空氣間隙形成處理
KR20170041847A (ko) 등각적 탄소 막들을 사용하여 임계 치수를 감소시키기 위한 방법
US20110065280A1 (en) Mask pattern forming method and semiconductor device manufacturing method
JP7773277B2 (ja) 基板処理方法
US20230120214A1 (en) Method for controlling wet etch rate (wer) selectivity
US20230083577A1 (en) Recessed metal etching methods
TW202516621A (zh) 基板處理方法
KR100891518B1 (ko) 반도체 소자의 제조방법
KR20180121096A (ko) 질소를 함유하는 실리콘 박막의 플라즈마 원자층 증착 방법 및 반도체 소자의 더블 패터닝 방법