JP2018064103A - 13族窒化物複合基板、半導体素子、および13族窒化物複合基板の製造方法 - Google Patents
13族窒化物複合基板、半導体素子、および13族窒化物複合基板の製造方法 Download PDFInfo
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Abstract
【解決手段】13族窒化物複合基板が、GaNからなり、n型の導電性を呈する基材と、基材の上に形成された、AlpGa1−pN(0.1≦p≦0.98)からなり1×106Ωcm以上の比抵抗を有するAlGaN層下地層の上に形成された、不純物濃度の総和が1×1017/cm3以下のGaN層であるチャネル層と、チャネル層の上に形成された、AlxInyGa1−x−yN(0≦x≦1、0≦y≦1)なる組成の13族窒化物からなる障壁層と、を備えるようにする。
【選択図】図1
Description
図1は、本発明に係る13族窒化物(III族窒化物)複合基板の一実施形態としての13族窒化物複合基板10を含んで構成される、本発明に係る半導体素子の一実施形態としてのHEMT素子20の断面構造を、模式的に示す図である。
上述のように、下地層2は、ZnドープGaN層2A、C含有GaN層2B、またはAlGaN層2Cのいずれかであることが好ましい。そこで、次にそれぞれについて詳説する。
次に、上述のような構成を有する13族窒化物複合基板10およびHEMT素子20の作製手順について説明する。ただし、上述したように、本実施の形態においては、基材1の上に、下地層2として、ZnドープGaN層2A、C含有GaN層2B、または、AlGaN層2Cのいずれかを形成するのが好ましいことから、以降においては、下地層2を形成する方法として、ZnドープGaN層2A、C含有GaN層2B、およびAlGaN層2Cを形成する方法をそれぞれに説明したうえで、下地層2の上に対するチャネル層3および障壁層4の形成について説明する。
ZnドープGaN層2Aの作成は、フラックス法により行う。具体的にはまず、基材1たるGaN基板を用意する。そして、種結晶たる基材1と、20g〜70gの金属Gaと、40g〜120gの金属Naと、0.1g〜5gの金属Znとをアルミナ坩堝に充填する。さらに、該アルミナ坩堝を耐熱金属製の育成容器に入れて密閉する。
C含有GaN層2Bの形成は、MOCVD法により行う。係るC含有GaN層2Bの形成には、少なくとも、Gaについての有機金属(MO)原料ガス(TMG)と、Nの原料ガスたるアンモニアガスと、水素ガスと、窒素ガスとをリアクタ内に供給可能に構成されてなる、公知のMOCVD炉を用いる。もちろん、該MOCVD炉が他の原料ガスが供給可能に構成されていてもよい。
AlGaN層2Cの形成は、C含有GaN層2Bの形成と同様、MOCVD法により行う。それゆえ、AlGaN層2Cの形成には、Alについての有機金属(MO)原料ガス(TMA)についても供給可能とされていれば、C含有GaN層2Bを形成する場合と同様のMOCVD炉を用いることができる。もちろん、該MOCVD炉が他の原料ガスが供給可能に構成されていてもよい。
上述したいずれかの態様にて下地層2を形成した後、続いて、チャネル層3および障壁層4を順次に形成する。チャネル層3および障壁層4の形成は、MOCVD法にて行う。好ましくは、チャネル層3と障壁層4とは、一のMOCVD炉を用いて連続的に行う。なお、下地層2としてC含有GaN層2BまたはAlGaN層2Cを形成する場合には、これらの層の形成も含め、一のMOCVD炉を用いて連続的に行うのが好ましい。
本参考例では、下地層2としてZnドープGaN層2Aを形成することによって13族窒化物複合基板10を作製し、さらに、該13族窒化物複合基板10を用いてHEMT素子20を作製した。そして、それらの作製途中および作製後に、いくつかの特性評価を行った。
本参考例では、下地層2としてC含有GaN層2Bを備える13族窒化物複合基板10を作製し、さらに、該13族窒化物複合基板10を用いてHEMT素子20を作製した。13族窒化物複合基板10としては、C含有GaN層2BのC濃度を違えた5種類のものを作製し、それぞれについてHEMT素子20を作製した(No.2−1〜2−5)。その作成手順は、C含有GaN層2B、チャネル層3、および障壁層4の形成を、一のMOCVD炉によって連続的に行うようにしたほかは、参考例1と同様とした。そして、それらの作製途中および作製後に、いくつかの特性評価を行った。
本実施例では、下地層2としてAlpGa1−pNなる組成のAlGaN層2Cを備える13族窒化物複合基板10を作製し、さらに、該13族窒化物複合基板10を用いてHEMT素子20を作製した。13族窒化物複合基板10としては、AlGaN層2CのAl組成比pを違えた6種類のものを作製し、それぞれについてHEMT素子20を作製した(No.3−1〜3−6)。その作成手順は、AlGaN層2C、チャネル層3、および障壁層4の形成を、一のMOCVD炉によって連続的に行うようにしたほかは、参考例1と同様とした。そして、それらの作製途中および作製後に、いくつかの特性評価を行った。
下地層2を形成しないようにし、基材1の上に直接にHEMT構造を設けるようにしたほかは、参考例1と同様に(参考例2、実施例とも同様である)HEMT素子を作成した。
参考例1、参考例2、実施例1、および比較例1において基材1として用いた導電性のGaN基板に代えて、比抵抗が1×106Ω・cm以上である15mm角の(0001)面方位の半絶縁性GaN基板を用意し、これを用いて、比較例1と同様に下地層2を形成することなくHEMT素子を作製した。
下地層2としてC含有GaN層2Bを形成した後、これに続いて、C含有GaN層2Bと同じC濃度を有するようにチャネル層3を形成した他は、参考例2のNo.2−3および2−4と同様にHEMT素子を作製した。なお、下地層2とチャネル層3の総膜厚は12μmとなるようにした。以降、No.2−3に対応する条件で作製した試料をNo.2−3aとし、No.2−4に対応する条件で作製した試料をNo.2−4aとする。
2 下地層
2C AlGaN層
3 チャネル層
4 障壁層
5 ソース電極
6 ドレイン電極
7 ゲート電極
10 13族窒化物複合基板
20 HEMT素子
Claims (3)
- GaNからなり、n型の導電性を呈する基材と、
前記基材の上に形成された、AlpGa1−pN(0.1≦p≦0.98)からなり1×106Ωcm以上の比抵抗を有するAlGaN層である下地層と、
前記下地層の上に形成された、不純物濃度の総和が1×1017/cm3以下のGaN層であるチャネル層と、
前記チャネル層の上に形成された、AlxInyGa1−x−yN(0≦x≦1、0≦y≦1)なる組成の13族窒化物からなる障壁層と、
を備えることを特徴とする13族窒化物複合基板。 - 請求項1に記載の13族窒化物複合基板と、
前記13族窒化物複合基板の前記障壁層の上に形成されてなり、前記障壁層との間にオーミック性接触を有してなるソース電極およびドレイン電極と、
前記13族窒化物複合基板の前記障壁層の上に形成されてなり、前記障壁層との間にショットキー性接触を有してなるゲート電極と、
を備えることを特徴とする半導体素子。 - 13族窒化物複合基板の製造方法であって、
GaNからなり、n型の導電性を呈する基材の上に、AlpGa1−pN(0.1≦p≦0.98)からなり1×106Ωcm以上の比抵抗を有するAlGaN層である下地層を形成する下地層形成工程と、
前記下地層の上に、不純物濃度の総和が1×1017/cm3以下のGaN層であるチャネル層を形成するチャネル層形成工程と、
前記チャネル層の上に、AlxInyGa1−x−yN(0≦x≦1、0≦y≦1)なる組成の13族窒化物からなる障壁層を形成する障壁層形成工程と、
を備えることを特徴とする13族窒化物複合基板の製造方法。
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WO2023157356A1 (ja) * | 2022-02-18 | 2023-08-24 | 日本碍子株式会社 | 13族元素窒化物単結晶基板、エピタキシャル成長層成膜用基板、積層体および半導体素子用エピタキシャル基板 |
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CN105229778B (zh) | 2018-12-11 |
US20150187926A1 (en) | 2015-07-02 |
WO2014196466A1 (ja) | 2014-12-11 |
US20170069749A1 (en) | 2017-03-09 |
JPWO2014196466A1 (ja) | 2017-02-23 |
JP6487989B2 (ja) | 2019-03-20 |
KR102132760B1 (ko) | 2020-07-13 |
TW201511260A (zh) | 2015-03-16 |
KR20200033982A (ko) | 2020-03-30 |
TW201743451A (zh) | 2017-12-16 |
KR20160015244A (ko) | 2016-02-12 |
TWI606588B (zh) | 2017-11-21 |
KR102232558B1 (ko) | 2021-03-29 |
EP3007215A4 (en) | 2017-06-07 |
EP3007215A1 (en) | 2016-04-13 |
JP6386454B2 (ja) | 2018-09-05 |
US9882042B2 (en) | 2018-01-30 |
US10347755B2 (en) | 2019-07-09 |
EP3312870A1 (en) | 2018-04-25 |
TWI636570B (zh) | 2018-09-21 |
CN105229778A (zh) | 2016-01-06 |
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