JP5758880B2 - 半導体素子用エピタキシャル基板、半導体素子、および半導体素子用エピタキシャル基板の作製方法 - Google Patents
半導体素子用エピタキシャル基板、半導体素子、および半導体素子用エピタキシャル基板の作製方法 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims description 132
- 239000004065 semiconductor Substances 0.000 title claims description 46
- 238000004519 manufacturing process Methods 0.000 title claims description 29
- 230000004888 barrier function Effects 0.000 claims description 130
- 239000000203 mixture Substances 0.000 claims description 81
- 125000006850 spacer group Chemical group 0.000 claims description 41
- 150000004767 nitrides Chemical class 0.000 claims description 40
- 238000000034 method Methods 0.000 claims description 22
- 230000015572 biosynthetic process Effects 0.000 claims description 19
- 238000010587 phase diagram Methods 0.000 claims description 12
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- 229910052738 indium Inorganic materials 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 247
- 230000005533 two-dimensional electron gas Effects 0.000 description 20
- 229910002601 GaN Inorganic materials 0.000 description 18
- 239000007789 gas Substances 0.000 description 18
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 14
- 229910052751 metal Inorganic materials 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 10
- 230000000694 effects Effects 0.000 description 7
- 229910001873 dinitrogen Inorganic materials 0.000 description 6
- 230000010287 polarization Effects 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 229910002704 AlGaN Inorganic materials 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 230000005587 bubbling Effects 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 125000004430 oxygen atom Chemical group O* 0.000 description 4
- 125000004432 carbon atom Chemical group C* 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 230000002269 spontaneous effect Effects 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000000089 atomic force micrograph Methods 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 125000002524 organometallic group Chemical group 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000011165 process development Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
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Description
<エピタキシャル基板の構成>
図1は、本発明の第1の実施の形態に係るエピタキシャル基板10Aと、これを用いて作製されたHEMT素子10の構成を概略的に示す断面模式図である。エピタキシャル基板10Aは、基板1と、バッファ層2と、チャネル層3と、障壁層5とが積層形成された構成を有する。バッファ層2と、チャネル層3と、障壁層5とはいずれも、MOCVD法(有機金属化学的気相成長法)を用いてエピタキシャル形成される(詳細は後述)のが好適な一例である。なお、図1における各層の厚みの比率は、実際のものを反映したものではない。
次に、本実施の形態において特徴的である、障壁層5の構成態様について説明する。具体的には、障壁層5は、その取り得る組成範囲および表面形態に特徴を有する。
図4:Al0.1Ga0.9N(x1=0、y1=0.1、z1=0.9);
図5:Al0.2Ga0.8N(x1=0、y1=0.2、z1=0.8);
図6:Al0.3Ga0.7N(x1=0、y1=0.3、z1=0.7)。
次に、チャネル層3および障壁層5が上述のような組成範囲を有するエピタキシャル基板10Aを作製する方法を説明する。
<スペーサ層を備えるHEMT素子>
図7は、本発明の第2の実施の形態に係るエピタキシャル基板20Aと、これを用いて作製されたHEMT素子20の構成を概略的に示す断面模式図である。エピタキシャル基板20Aは、第1の実施の形態に係るエピタキシャル基板10Aのチャネル層3と障壁層5の間に、スペーサ層4が介挿された構成を有する。スペーサ層4以外の構成要素については、第1の実施の形態に係るエピタキシャル基板10Aと同じであるので、その詳細な説明は省略する。
上述のような構造を有するエピタキシャル基板20Aは、スペーサ層4の形成に係るプロセスを除き、第1の実施の形態に係るエピタキシャル基板10Aと同様の方法で作製される。
Claims (11)
- 下地基板と、
少なくともGaを含む、Inx1Aly1Gaz1N(x1+y1+z1=1)なる組成の第1のIII族窒化物からなるチャネル層と、
少なくともInとAlを含む、Inx2Aly2Gaz2N(x2+y2+z2=1)なる組成の第2のIII族窒化物からなる障壁層と、
を備える半導体素子用のエピタキシャル基板であって、
前記障壁層が面内方向に引張歪みを内在してなり、かつ、前記障壁層の表面に、直径が60nm以上120nm以下であるピットが5×107/cm2以上1×109/cm2以下の面密度で形成されてなる、
ことを特徴とする半導体素子用エピタキシャル基板。 - 請求項1に記載の半導体素子用エピタキシャル基板であって、
前記第1のIII族窒化物がGaNであるとともに、
前記第2のIII族窒化物の組成が、InN、AlN、GaNを頂点とする三元状態図上において以下の各式で表される直線にて囲まれる第1の組成範囲内にある、
ことを特徴とする半導体素子用エピタキシャル基板。
- 請求項2に記載の半導体素子用エピタキシャル基板であって、
前記第2のIII族窒化物の組成が、前記第1の組成範囲であって、さらに以下の各式で表される直線にて囲まれる範囲内にある、
ことを特徴とする半導体素子用エピタキシャル基板。
- 請求項1ないし請求項3のいずれかに記載の半導体素子用エピタキシャル基板であって、
前記チャネル層と前記障壁層との間に、AlNからなるスペーサ層、
をさらに備えることを特徴とする半導体素子用エピタキシャル基板。 - 請求項1ないし請求項4のいずれかに記載の半導体素子用エピタキシャル基板を用いて作製された半導体素子。
- 半導体素子用エピタキシャル基板を作製する方法であって、
下地基板の上に、少なくともGaを含む、In x1 Al y1 Ga z1 N(x1+y1+z1=1)なる組成の第1のIII族窒化物からなるチャネル層をエピタキシャル形成するチャネル層形成工程と、
前記チャネル層の上に、少なくともInとAlを含む、In x2 Al y2 Ga z2 N(x2+y2+z2=1)なる組成の第2のIII族窒化物からなる障壁層をエピタキシャル形成する障壁層形成工程と、
を備え、
前記障壁層形成工程においては、前記障壁層を、面内方向に引張歪みが内在し、かつ、前記障壁層の表面に、直径が60nm以上120nm以下であるピットが5×10 7 /cm 2 以上1×10 9 /cm 2 以下の面密度で存在するように形成する、
ことを特徴とする半導体素子用エピタキシャル基板の作製方法。 - 請求項6に記載の半導体素子用エピタキシャル基板の作製方法であって、
前記チャネル層形成工程においては前記チャネル層をGaNにて形成し、
前記障壁層形成工程においては、前記第2のIII族窒化物の組成が、InN、AlN、GaNを頂点とする三元状態図上において以下の各式で表される直線にて囲まれる第1の組成範囲をみたすように、前記障壁層を形成する、
ことを特徴とする半導体素子用エピタキシャル基板の作製方法。
- 請求項7に記載の半導体素子用エピタキシャル基板の作製方法であって、
前記第2のIII族窒化物の組成が、前記第1の組成範囲であって、さらに以下の各式で表される直線にて囲まれる範囲内にある、
ことを特徴とする半導体素子用エピタキシャル基板の作製方法。
- 請求項6ないし請求項8のいずれかに記載の半導体素子用エピタキシャル基板の作製方法であって、
前記チャネル層の上に、AlNからなるスペーサ層を形成するスペーサ層形成工程、
をさらに備え、
前記障壁層形成工程においては、前記スペーサ層の上に前記障壁層を形成する、
ことを特徴とする半導体素子用エピタキシャル基板の作製方法。 - 請求項6ないし請求項8のいずれかに記載の半導体素子用エピタキシャル基板の作製方法であって、
前記障壁層形成工程においては、
前記障壁層の形成温度を650℃以上800℃以下とし、
前記下地基板を設置するリアクタ内の圧力を3kPa以上30kPa以下とする、
ことを特徴とする半導体素子用エピタキシャル基板の作製方法。 - 請求項10に記載の半導体素子用エピタキシャル基板の作製方法であって、
前記障壁層形成工程においては、
前記リアクタ内の圧力を5kPa以上20kPa以下とする、
ことを特徴とする半導体素子用エピタキシャル基板の作製方法。
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US11469304B2 (en) | 2020-01-27 | 2022-10-11 | Kabushiki Kaisha Toshiba | Semiconductor device, method for manufacturing semiconductor device, and manufacturing apparatus of semiconductor device |
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US20120313213A1 (en) * | 2011-06-07 | 2012-12-13 | Raytheon Company | Polygon shaped power amplifier chips |
WO2013011617A1 (ja) * | 2011-07-15 | 2013-01-24 | パナソニック株式会社 | 半導体装置及びその製造方法 |
WO2013125126A1 (ja) * | 2012-02-23 | 2013-08-29 | 日本碍子株式会社 | 半導体素子および半導体素子の製造方法 |
WO2014024310A1 (ja) * | 2012-08-10 | 2014-02-13 | 日本碍子株式会社 | 半導体素子、hemt素子、および半導体素子の製造方法 |
JP6386454B2 (ja) * | 2013-06-06 | 2018-09-05 | 日本碍子株式会社 | 13族窒化物複合基板、半導体素子、および13族窒化物複合基板の製造方法 |
JP6064051B2 (ja) * | 2013-11-06 | 2017-01-18 | シャープ株式会社 | 窒化物半導体 |
US9306014B1 (en) * | 2013-12-27 | 2016-04-05 | Power Integrations, Inc. | High-electron-mobility transistors |
JP2017085006A (ja) * | 2015-10-29 | 2017-05-18 | 富士通株式会社 | 化合物半導体装置及びその製造方法 |
JP2018085414A (ja) * | 2016-11-22 | 2018-05-31 | 富士通株式会社 | 化合物半導体装置 |
CN109742144B (zh) * | 2019-01-28 | 2020-09-22 | 华南理工大学 | 一种槽栅增强型mishemt器件及其制作方法 |
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JP2006032911A (ja) * | 2004-06-15 | 2006-02-02 | Ngk Insulators Ltd | 半導体積層構造、半導体素子およびhemt素子 |
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