JP5308290B2 - 半導体素子用エピタキシャル基板、ショットキー接合構造、およびショットキー接合構造の漏れ電流抑制方法 - Google Patents
半導体素子用エピタキシャル基板、ショットキー接合構造、およびショットキー接合構造の漏れ電流抑制方法 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims description 81
- 239000004065 semiconductor Substances 0.000 title claims description 42
- 238000000034 method Methods 0.000 title claims description 13
- 150000004767 nitrides Chemical class 0.000 claims description 48
- 230000004888 barrier function Effects 0.000 claims description 47
- 239000013078 crystal Substances 0.000 claims description 26
- 239000000203 mixture Substances 0.000 claims description 26
- 125000006850 spacer group Chemical group 0.000 claims description 20
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- 229910052738 indium Inorganic materials 0.000 claims description 9
- 125000004429 atom Chemical group 0.000 description 22
- 239000007789 gas Substances 0.000 description 12
- 229910002601 GaN Inorganic materials 0.000 description 10
- 229910052757 nitrogen Inorganic materials 0.000 description 10
- 230000005533 two-dimensional electron gas Effects 0.000 description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 125000004433 nitrogen atom Chemical group N* 0.000 description 6
- 230000010287 polarization Effects 0.000 description 5
- 229910002704 AlGaN Inorganic materials 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 230000005587 bubbling Effects 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000013508 migration Methods 0.000 description 3
- 230000005012 migration Effects 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000002269 spontaneous effect Effects 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 229910052984 zinc sulfide Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 238000011165 process development Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000000790 scattering method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
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- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
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- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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Description
図1は、本発明の実施の形態に係るエピタキシャル基板10の構成を概略的に示す断面模式図である。エピタキシャル基板10は、下地基板1と、バッファ層2と、チャネル層3と、スペーサ層4と、障壁層5とが積層形成された構成を有する。なお、図1における各層の厚みの比率は、実際のものを反映したものではない。バッファ層2と、チャネル層3と、スペーサ層4と、障壁層5とはいずれも、MOCVD法(有機金属化学的気相成長法)を用いてエピタキシャル形成される(詳細は後述)のが好適な一例である。
上述したように、本実施の形態に係るエピタキシャル基板10においては、Inx2Aly2N(x2+y2=1、x2>、y2>0)なる組成のIII族窒化物からなる障壁層5が、短距離規則混晶として形成されてなる。以下、障壁層5についてより詳細に説明する。
(1)式より、In原子の最近接格子位置におけるAl原子の存在比率が組成比と同じ(PIn-Al=x2)であるときにα=0、組成比よりもAl原子の存在比率が大きい(PIn-Al>x2)ときにα<0、組成比よりもAl原子の比率が小さい(PA-B<x)ときにα>0となる。理論上−1<α<1である(α=−1の場合はAl原子のみが存在することになり、α=1の場合はIn原子のみが存在することになる)。α<0は、相異なる原子が交互に配列する度合いが強いことを表しており、α>0は、同種原子が近接してクラスターを形成する度合いが強いことを表している。
次に、上述のような構成を有するエピタキシャル基板10を作製する方法を説明する。
2 バッファ層
3 チャネル層
3e 二次元電子ガス領域
4 スペーサ層
5 障壁層
10 エピタキシャル基板
Claims (11)
- 下地基板の上にIII族窒化物層群を(0001)結晶面が基板面に対し略平行となるよう積層形成した半導体素子用エピタキシャル基板であって、
Inx1Aly1Gaz1N(x1+y1+z1=1、z1>0)なる組成の第1のIII族窒化物からなるチャネル層と、
Inx2Aly2N(x2+y2=1、x2>0、y2>0)なる組成の第2のIII族窒化物からなる障壁層と、
を備え、
前記第2のIII族窒化物が、短距離規則度パラメータαが0<α<1の範囲をみたす短距離規則混晶である、
ことを特徴とする半導体素子用エピタキシャル基板。 - 請求項1に記載の半導体素子用エピタキシャル基板であって、
前記第2のIII族窒化物が、短距離規則度パラメータαが0.4<α<1の範囲をみたす短距離規則混晶である、
ことを特徴とする半導体素子用エピタキシャル基板。 - 請求項1または請求項2に記載の半導体素子用エピタキシャル基板であって、
前記第2のIII族窒化物のバンドギャップが前記第1のIII族窒化物のバンドギャップよりも大きい、
ことを特徴とする半導体素子用エピタキシャル基板。 - 請求項1ないし請求項3のいずれかに記載の半導体素子用エピタキシャル基板であって、
前記第1のIII族窒化物がAly1Gaz1N(y1+z1=1、z1>0)である、
ことを特徴とする半導体素子用エピタキシャル基板。 - 請求項4に記載の半導体素子用エピタキシャル基板であって、
前記第1のIII族窒化物がGaNである、
ことを特徴とする半導体素子用エピタキシャル基板。 - 請求項1ないし請求項5のいずれかに記載の半導体素子用エピタキシャル基板であって、
前記第2のIII族窒化物が、Inx2Aly2N(x2+y2=1、0.14≦x2≦0.22)である、
ことを特徴とする半導体素子用エピタキシャル基板。 - 請求項1ないし請求項6のいずれかに記載の半導体素子用エピタキシャル基板であって、
前記チャネル層と前記障壁層との間に、少なくともAlを含み、Inx3Aly3Gaz3N(x3+y3+z3=1)なる組成を有し、前記第2のIII族窒化物よりもバンドギャップが大きい第3のIII族窒化物からなるスペーサ層をさらに備える、
ことを特徴とする半導体素子用エピタキシャル基板。 - 請求項7に記載の半導体素子用エピタキシャル基板であって、
前記第3のIII族窒化物がAlNである、
ことを特徴とする半導体素子用エピタキシャル基板。 - 半導体素子におけるショットキー接合構造であって、
請求項1ないし請求項8のいずれかに記載のエピタキシャル基板の障壁層の上に金属電極を形成してなることを特徴とするショットキー接合構造。 - 半導体素子におけるIII族窒化物層と金属電極とのショットキー接合構造であって、
前記III族窒化物層が、III族元素としてInとAlとを含み、短距離規則度パラメータαが0<α<1の範囲をみたす短距離規則混晶からなる、
ことを特徴とするショットキー接合構造。 - 半導体素子におけるIII族窒化物層と金属電極とのショットキー接合の漏れ電流抑制方法であって、
前記III族窒化物層を、III族元素としてInとAlとを含み、短距離規則度パラメータαが0<α<1の範囲をみたす短距離規則混晶として形成する、
ことを特徴とするショットキー接合構造の漏れ電流抑制方法。
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JP2009212755A JP5308290B2 (ja) | 2009-09-15 | 2009-09-15 | 半導体素子用エピタキシャル基板、ショットキー接合構造、およびショットキー接合構造の漏れ電流抑制方法 |
CN201010251699.0A CN102024845B (zh) | 2009-09-15 | 2010-08-09 | 半导体元件用外延基板、肖特基接合结构以及肖特基接合结构的漏电流抑制方法 |
EP10172264.3A EP2296172B1 (en) | 2009-09-15 | 2010-08-09 | Epitaxial substrate for semiconductor device, schottky junction structure, and leakage current suppression method for schottky junction structure |
US12/853,685 US8598626B2 (en) | 2009-09-15 | 2010-08-10 | Epitaxial substrate for semiconductor device, schottky junction structure, and leakage current suppression method for schottky junction structure |
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JP4968747B2 (ja) * | 2009-02-03 | 2012-07-04 | シャープ株式会社 | Iii−v族化合物半導体素子 |
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US20110062493A1 (en) | 2011-03-17 |
EP2296172B1 (en) | 2014-04-23 |
US8598626B2 (en) | 2013-12-03 |
CN102024845B (zh) | 2014-05-14 |
EP2296172A3 (en) | 2011-09-07 |
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JP2011066034A (ja) | 2011-03-31 |
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