JP2017529702A - プラズマダイシングのための近接接触カバーリング - Google Patents
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- 239000000758 substrate Substances 0.000 claims abstract description 220
- 238000000034 method Methods 0.000 claims abstract description 112
- 239000004065 semiconductor Substances 0.000 claims abstract description 93
- 230000008569 process Effects 0.000 claims abstract description 85
- 238000005530 etching Methods 0.000 claims abstract description 31
- 239000000463 material Substances 0.000 claims description 29
- 238000001020 plasma etching Methods 0.000 claims description 26
- 230000002093 peripheral effect Effects 0.000 claims description 19
- 230000005855 radiation Effects 0.000 claims description 6
- 238000003848 UV Light-Curing Methods 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 153
- 239000010410 layer Substances 0.000 description 44
- 229910052710 silicon Inorganic materials 0.000 description 22
- 239000010703 silicon Substances 0.000 description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 21
- 239000002609 medium Substances 0.000 description 17
- 238000003860 storage Methods 0.000 description 14
- 238000000608 laser ablation Methods 0.000 description 11
- 230000001070 adhesive effect Effects 0.000 description 10
- 239000000853 adhesive Substances 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 7
- 238000000059 patterning Methods 0.000 description 7
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- 238000002679 ablation Methods 0.000 description 6
- 230000032798 delamination Effects 0.000 description 6
- 239000012636 effector Substances 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000005520 cutting process Methods 0.000 description 5
- 230000006378 damage Effects 0.000 description 5
- 239000003989 dielectric material Substances 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 238000004806 packaging method and process Methods 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 238000013459 approach Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- 239000004734 Polyphenylene sulfide Substances 0.000 description 2
- 239000002313 adhesive film Substances 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000036961 partial effect Effects 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229920000069 polyphenylene sulfide Polymers 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 230000003685 thermal hair damage Effects 0.000 description 2
- 238000009834 vaporization Methods 0.000 description 2
- 230000008016 vaporization Effects 0.000 description 2
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- 238000009623 Bosch process Methods 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229920002307 Dextran Polymers 0.000 description 1
- 241000237503 Pectinidae Species 0.000 description 1
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 1
- 229920002845 Poly(methacrylic acid) Polymers 0.000 description 1
- 229920002873 Polyethylenimine Polymers 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229920002125 Sokalan® Polymers 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000003929 acidic solution Substances 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 239000012736 aqueous medium Substances 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- -1 but not limited to Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229940114081 cinnamate Drugs 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- URQUNWYOBNUYJQ-UHFFFAOYSA-N diazonaphthoquinone Chemical compound C1=CC=C2C(=O)C(=[N]=[N])C=CC2=C1 URQUNWYOBNUYJQ-UHFFFAOYSA-N 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 238000010329 laser etching Methods 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 239000004584 polyacrylic acid Substances 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 235000020637 scallop Nutrition 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- WBYWAXJHAXSJNI-VOTSOKGWSA-M trans-cinnamate Chemical compound [O-]C(=O)\C=C\C1=CC=CC=C1 WBYWAXJHAXSJNI-VOTSOKGWSA-M 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32366—Localised processing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
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- Manufacturing & Machinery (AREA)
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- Microelectronics & Electronic Packaging (AREA)
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- Dicing (AREA)
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Abstract
Description
にスクライブラインを有する、半導体ウエハを提供することを含む。該方法は、半導体ウエハ及び基板キャリアの上にカバーリングを載置することも含む。カバーリングは、半導体ウエハの直径よりも小さい直径を有する内側開口部を有する。カバーリングは、内側開口部を取り囲む外側フレームも有する。外側フレームは、半導体ウエハの最も外側の部分を受け入れるための斜角を有する。該方法は、スクライブラインを通じて半導体ウエハをプラズマエッチングし、集積回路を個片化することも含む。
Claims (15)
- エッチングプロセスの間にキャリア及び基板アセンブリを保護するためのカバーリングであって、
前記キャリア及び基板アセンブリの基板の直径よりも小さい直径を有する内側開口部、並びに
前記内側開口部を取り囲む外側フレームであって、前記キャリア及び基板アセンブリの前記基板の最も外側の部分を受け入れるための斜角を有する、外側フレームを備える、カバーリング。 - 前記斜角が、張り出した表面と周縁の表面を備える、請求項1に記載のカバーリング。
- 前記斜角の前記張り出した表面が、前記キャリア及び基板アセンブリの前記基板の前記最も外側の部分の上側表面と接触するためのものである、請求項2に記載のカバーリング。
- 前記斜角の前記周縁の表面が、前記キャリア及び基板アセンブリの前記基板の前記最も外側の部分の周縁の表面と接触するためのものである、請求項2に記載のカバーリング。
- 前記斜角が、前記斜角の前記張り出した表面と前記周縁の表面とを接合させる突出した傾斜の表面を更に備え、前記突出した傾斜の表面が、前記キャリア及び基板アセンブリの前記基板の前記最も外側の部分の斜面と接触するためのものである、請求項2に記載のカバーリング。
- 前記斜角が、前記斜角の前記張り出した表面と前記周縁の表面とを接合させる、凹んだ傾斜の表面を更に備える、請求項2に記載のカバーリング。
- 前記凹んだ傾斜の表面が、前記外側フレームのライトトラップ領域を提供するためのものである、請求項6に記載のカバーリング。
- 前記外側フレームが、実質的に紫外線放射を透過しない材料を含む、請求項1に記載のカバーリング。
- 上に複数の集積回路を有する前面を備えた半導体ウエハをダイシングする方法であって、
基板キャリア上に、前記半導体ウエハであって、前記集積回路を覆うパターニングされたマスクを有し、前記集積回路の間にスクライブラインを有する、半導体ウエハを提供すること、
前記半導体ウエハ及び前記基板キャリア上に、カバーリングであって、前記半導体ウエハの直径よりも小さい直径を有する内側開口部を備え、前記内側開口部を取り囲み且つ前記半導体ウエハの最も外側の部分を受け入れるための斜角を有する外側フレームを有する、カバーリングを載置すること、並びに
前記スクライブラインを通じて前記半導体ウエハをプラズマエッチングし、前記集積回路を個片化することを含む、方法。 - 前記カバーリングが、前記プラズマエッチングの間に生成された紫外線放射から、前記基板キャリアのダイシングテープの一部分を保護する、請求項9に記載の方法。
- 前記カバーリングが、前記プラズマエッチングの間に、前記基板キャリアのダイシングテープの紫外線硬化を抑制する、請求項9に記載の方法。
- キャリア及び基板アセンブリを支持するための基板処理領域、及び
前記基板処理領域上に移動可能に配置されたカバーリングであって、エッチングプロセスの間に、前記キャリア及び基板アセンブリを保護するためのものである、カバーリングを備え、前記カバーリングが、
前記キャリア及び基板アセンブリの基板の直径よりも小さい直径を有する内側開口部と、
前記内側開口部を取り囲む外側フレームであって、前記エッチングプロセスの間に、前記キャリア及び基板アセンブリの前記基板の最も外側の部分を受け入れるための斜角を有する、外側フレームとを備える、プラズマエッチングチャンバ。 - 前記カバーリングの前記斜角が、張り出した表面及び周縁の表面を備え、前記斜角の前記張り出した表面が、前記キャリア及び基板アセンブリの前記基板の前記最も外側の部分の上側表面と接触するためのものであり、前記斜角の前記周縁の表面が、前記キャリア及び基板アセンブリの前記基板の前記最も外側の部分の周縁の表面と接触するためのものである、請求項12に記載のプラズマエッチングチャンバ。
- 前記カバーリングの前記斜角が、前記斜角の前記張り出した表面と前記周縁の表面とを接合させる突出した傾斜の表面を更に備え、前記突出した傾斜の表面が、前記キャリア及び基板アセンブリの前記基板の前記最も外側の部分の斜面と接触するためのものである、請求項13に記載のプラズマエッチングチャンバ。
- 前記カバーリングの前記斜角が、前記斜角の前記張り出した表面と前記周縁の表面とを接合させる凹んだ傾斜の表面を更に備え、前記凹んだ傾斜の表面が、前記外側フレームのライトトラップ領域を提供するためのものである、請求項13に記載のプラズマエッチングチャンバ。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/491,856 US11195756B2 (en) | 2014-09-19 | 2014-09-19 | Proximity contact cover ring for plasma dicing |
US14/491,856 | 2014-09-19 | ||
PCT/US2015/047038 WO2016043938A1 (en) | 2014-09-19 | 2015-08-26 | Proximity contact cover ring for plasma dicing |
Publications (2)
Publication Number | Publication Date |
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JP2017529702A true JP2017529702A (ja) | 2017-10-05 |
JP6676042B2 JP6676042B2 (ja) | 2020-04-08 |
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JP2017515746A Active JP6676042B2 (ja) | 2014-09-19 | 2015-08-26 | プラズマダイシングのための近接接触カバーリング |
Country Status (7)
Country | Link |
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US (1) | US11195756B2 (ja) |
EP (1) | EP3195350A4 (ja) |
JP (1) | JP6676042B2 (ja) |
KR (1) | KR102477122B1 (ja) |
CN (1) | CN107078015B (ja) |
TW (2) | TWI686865B (ja) |
WO (1) | WO2016043938A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019096812A (ja) * | 2017-11-27 | 2019-06-20 | 株式会社ディスコ | 被加工物の加工方法 |
JP2020501359A (ja) * | 2016-11-30 | 2020-01-16 | プラズマ − サーム、エルエルシー | 半導体ウエハーをプラズマ・ダイシングするための方法および装置 |
JP2021509227A (ja) * | 2018-06-20 | 2021-03-18 | エルジー・ケム・リミテッド | 回折格子導光板用モールドの製造方法および回折格子導光板の製造方法 |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20150206798A1 (en) * | 2014-01-17 | 2015-07-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Interconnect Structure And Method of Forming |
US9793129B2 (en) * | 2015-05-20 | 2017-10-17 | Infineon Technologies Ag | Segmented edge protection shield |
DE102016109693B4 (de) * | 2016-05-25 | 2022-10-27 | Infineon Technologies Ag | Verfahren zum Trennen von Halbleiterdies von einem Halbleitersubstrat und Halbleitersubstratanordnung |
JP6807558B2 (ja) * | 2016-11-08 | 2021-01-06 | パナソニックIpマネジメント株式会社 | プラズマ処理方法およびプラズマ処理装置 |
JP6818351B2 (ja) * | 2017-04-14 | 2021-01-20 | サムコ株式会社 | ウエハ処理装置 |
CN108231633B (zh) * | 2018-01-31 | 2020-04-17 | 江苏长电科技股份有限公司 | 用于引线框架的蚀刻保护治具及引线框架的蚀刻方法 |
CN108597990B (zh) * | 2018-05-29 | 2020-10-27 | 苏州因知成新能源有限公司 | 一种半导体晶圆前处理工艺 |
TWI741262B (zh) * | 2018-06-04 | 2021-10-01 | 美商帕斯馬舍門有限責任公司 | 切割晶粒附接膜的方法 |
WO2020036694A1 (en) * | 2018-08-16 | 2020-02-20 | Applied Materials, Inc. | Photomask laser etch |
KR102077975B1 (ko) * | 2019-10-15 | 2020-02-14 | 주식회사 기가레인 | 플라즈마 처리 수직도가 향상된 플라즈마 처리 장치 |
GB201918333D0 (en) | 2019-12-12 | 2020-01-29 | Spts Technologies Ltd | A semiconductor wafer dicing process |
CN113130284B (zh) * | 2019-12-31 | 2023-01-24 | 中微半导体设备(上海)股份有限公司 | 等离子体刻蚀设备 |
US11721583B2 (en) * | 2020-08-10 | 2023-08-08 | Applied Materials, Inc. | Mainframe-less wafer transfer platform with linear transfer system for wafer processing modules |
US11804416B2 (en) * | 2020-09-08 | 2023-10-31 | UTAC Headquarters Pte. Ltd. | Semiconductor device and method of forming protective layer around cavity of semiconductor die |
CN113178378B (zh) * | 2021-04-29 | 2024-05-17 | 北京北方华创微电子装备有限公司 | 反应腔室及半导体工艺设备 |
CN113634544B (zh) * | 2021-08-16 | 2022-09-16 | 湖北三维半导体集成创新中心有限责任公司 | 晶圆清洗机构 |
CN114434327A (zh) * | 2021-12-20 | 2022-05-06 | 彩虹显示器件股份有限公司 | 一种轻薄型耐火材料异形曲面磨削加工装置及方法 |
WO2024091528A1 (en) * | 2022-10-25 | 2024-05-02 | Applied Materials, Inc. | Metallic shield for stable tape-frame substrate processing |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012133585A1 (ja) * | 2011-03-29 | 2012-10-04 | 東京エレクトロン株式会社 | プラズマエッチング装置及びプラズマエッチング方法 |
JP2014523114A (ja) * | 2011-06-15 | 2014-09-08 | アプライド マテリアルズ インコーポレイテッド | 基板キャリアを用いたハイブリッドレーザ・プラズマエッチングウェハダイシング |
JP2014165182A (ja) * | 2013-02-21 | 2014-09-08 | Panasonic Corp | プラズマ処理装置及びプラズマ処理方法 |
Family Cites Families (109)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4049944A (en) | 1973-02-28 | 1977-09-20 | Hughes Aircraft Company | Process for fabricating small geometry semiconductive devices including integrated components |
US4339528A (en) | 1981-05-19 | 1982-07-13 | Rca Corporation | Etching method using a hardened PVA stencil |
US4684437A (en) | 1985-10-31 | 1987-08-04 | International Business Machines Corporation | Selective metal etching in metal/polymer structures |
EP0343502A3 (en) * | 1988-05-23 | 1991-04-17 | Lam Research Corporation | Method and system for clamping semiconductor wafers |
KR100215338B1 (ko) | 1991-03-06 | 1999-08-16 | 가나이 쓰도무 | 반도체 장치의 제조방법 |
US5316278A (en) * | 1992-09-18 | 1994-05-31 | Applied Materials, Inc. | Clamping ring apparatus for processing semiconductor wafers |
JPH06204323A (ja) * | 1992-10-27 | 1994-07-22 | Applied Materials Inc | ウェハプロセスチャンバ内のドーム状加熱ペディスタルのためのクランプリング |
EP0609809B8 (en) | 1993-02-01 | 2001-11-21 | Canon Kabushiki Kaisha | Liquid crystal display device |
US5326725A (en) * | 1993-03-11 | 1994-07-05 | Applied Materials, Inc. | Clamping ring and susceptor therefor |
US5439524A (en) * | 1993-04-05 | 1995-08-08 | Vlsi Technology, Inc. | Plasma processing apparatus |
US6123864A (en) * | 1993-06-02 | 2000-09-26 | Applied Materials, Inc. | Etch chamber |
US5405491A (en) * | 1994-03-04 | 1995-04-11 | Motorola Inc. | Plasma etching process |
US5593606A (en) | 1994-07-18 | 1997-01-14 | Electro Scientific Industries, Inc. | Ultraviolet laser system and method for forming vias in multi-layered targets |
JPH09216085A (ja) | 1996-02-07 | 1997-08-19 | Canon Inc | 基板の切断方法及び切断装置 |
ATE251341T1 (de) | 1996-08-01 | 2003-10-15 | Surface Technology Systems Plc | Verfahren zur ätzung von substraten |
US6426484B1 (en) | 1996-09-10 | 2002-07-30 | Micron Technology, Inc. | Circuit and method for heating an adhesive to package or rework a semiconductor die |
US5920973A (en) | 1997-03-09 | 1999-07-13 | Electro Scientific Industries, Inc. | Hole forming system with multiple spindles per station |
JP3230572B2 (ja) | 1997-05-19 | 2001-11-19 | 日亜化学工業株式会社 | 窒化物系化合物半導体素子の製造方法及び半導体発光素子 |
US6030513A (en) * | 1997-12-05 | 2000-02-29 | Applied Materials, Inc. | Full face mask for capacitance-voltage measurements |
US6057180A (en) | 1998-06-05 | 2000-05-02 | Electro Scientific Industries, Inc. | Method of severing electrically conductive links with ultraviolet laser output |
US6168668B1 (en) | 1998-11-25 | 2001-01-02 | Applied Materials, Inc. | Shadow ring and guide for supporting the shadow ring in a chamber |
US6123804A (en) * | 1999-02-22 | 2000-09-26 | Applied Materials, Inc. | Sectional clamp ring |
US6162336A (en) * | 1999-07-12 | 2000-12-19 | Chartered Semiconductor Manufacturing Ltd. | Clamping ring design to reduce wafer sticking problem in metal deposition |
JP2001044144A (ja) | 1999-08-03 | 2001-02-16 | Tokyo Seimitsu Co Ltd | 半導体チップの製造プロセス |
JP2001110811A (ja) | 1999-10-08 | 2001-04-20 | Oki Electric Ind Co Ltd | 半導体装置の製造方法 |
JP4387007B2 (ja) | 1999-10-26 | 2009-12-16 | 株式会社ディスコ | 半導体ウェーハの分割方法 |
JP2001144126A (ja) | 1999-11-12 | 2001-05-25 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法および半導体装置 |
JP2001148358A (ja) | 1999-11-19 | 2001-05-29 | Disco Abrasive Syst Ltd | 半導体ウェーハ及び該半導体ウェーハの分割方法 |
US6300593B1 (en) | 1999-12-07 | 2001-10-09 | First Solar, Llc | Apparatus and method for laser scribing a coated substrate |
AU2001227764A1 (en) | 2000-01-10 | 2001-07-24 | Electro Scientific Industries, Inc. | Laser system and method for processing a memory link with a burst of laser pulses having ultrashort pulsewidths |
US6887804B2 (en) | 2000-01-10 | 2005-05-03 | Electro Scientific Industries, Inc. | Passivation processing over a memory link |
WO2001074529A2 (en) | 2000-03-30 | 2001-10-11 | Electro Scientific Industries, Inc. | Laser system and method for single pass micromachining of multilayer workpieces |
CN1219319C (zh) | 2000-07-12 | 2005-09-14 | 电子科学工业公司 | 用于集成电路熔丝的单脉冲切断的紫外激光系统和方法 |
US6676878B2 (en) | 2001-01-31 | 2004-01-13 | Electro Scientific Industries, Inc. | Laser segmented cutting |
JP4219628B2 (ja) * | 2001-07-27 | 2009-02-04 | 東京エレクトロン株式会社 | プラズマ処理装置および基板載置台 |
US6759275B1 (en) | 2001-09-04 | 2004-07-06 | Megic Corporation | Method for making high-performance RF integrated circuits |
US6642127B2 (en) | 2001-10-19 | 2003-11-04 | Applied Materials, Inc. | Method for dicing a semiconductor wafer |
JP3910843B2 (ja) | 2001-12-13 | 2007-04-25 | 東京エレクトロン株式会社 | 半導体素子分離方法及び半導体素子分離装置 |
US6706998B2 (en) | 2002-01-11 | 2004-03-16 | Electro Scientific Industries, Inc. | Simulated laser spot enlargement |
KR20040086725A (ko) | 2002-02-25 | 2004-10-12 | 가부시기가이샤 디스코 | 반도체 웨이퍼의 분할 방법 |
KR100451950B1 (ko) | 2002-02-25 | 2004-10-08 | 삼성전자주식회사 | 이미지 센서 소자 웨이퍼 소잉 방법 |
JP2003257896A (ja) | 2002-02-28 | 2003-09-12 | Disco Abrasive Syst Ltd | 半導体ウェーハの分割方法 |
WO2003090258A2 (en) | 2002-04-19 | 2003-10-30 | Xsil Technology Limited | Laser machining |
JP2004031526A (ja) | 2002-06-24 | 2004-01-29 | Toyoda Gosei Co Ltd | 3族窒化物系化合物半導体素子の製造方法 |
US6582983B1 (en) | 2002-07-12 | 2003-06-24 | Keteca Singapore Singapore | Method and wafer for maintaining ultra clean bonding pads on a wafer |
JP4286497B2 (ja) | 2002-07-17 | 2009-07-01 | 新光電気工業株式会社 | 半導体装置の製造方法 |
EP1575081A1 (en) * | 2002-10-28 | 2005-09-14 | Tokyo Seimitsu Co.,Ltd. | Expansion method and device |
JP3908148B2 (ja) | 2002-10-28 | 2007-04-25 | シャープ株式会社 | 積層型半導体装置 |
JP2004146727A (ja) * | 2002-10-28 | 2004-05-20 | Tokyo Seimitsu Co Ltd | ウェーハの搬送方法 |
KR100912003B1 (ko) * | 2003-01-06 | 2009-08-14 | 주식회사 코미코 | 웨이퍼 주변을 보호하는 반도체 장비용 정전척 |
TW586178B (en) | 2003-01-29 | 2004-05-01 | Taiwan Semiconductor Mfg | Wafer clamp ring having removable pad and its manufacturing method |
US20040157457A1 (en) | 2003-02-12 | 2004-08-12 | Songlin Xu | Methods of using polymer films to form micro-structures |
JP2004273895A (ja) | 2003-03-11 | 2004-09-30 | Disco Abrasive Syst Ltd | 半導体ウエーハの分割方法 |
US7087452B2 (en) | 2003-04-22 | 2006-08-08 | Intel Corporation | Edge arrangements for integrated circuit chips |
JP2004322168A (ja) | 2003-04-25 | 2004-11-18 | Disco Abrasive Syst Ltd | レーザー加工装置 |
KR20040102632A (ko) * | 2003-05-28 | 2004-12-08 | 삼성전자주식회사 | 건식식각설비 |
JP4231349B2 (ja) | 2003-07-02 | 2009-02-25 | 株式会社ディスコ | レーザー加工方法およびレーザー加工装置 |
JP4408361B2 (ja) | 2003-09-26 | 2010-02-03 | 株式会社ディスコ | ウエーハの分割方法 |
US7128806B2 (en) | 2003-10-21 | 2006-10-31 | Applied Materials, Inc. | Mask etch processing apparatus |
JP4471632B2 (ja) | 2003-11-18 | 2010-06-02 | 株式会社ディスコ | ウエーハの加工方法 |
JP2005203541A (ja) | 2004-01-15 | 2005-07-28 | Disco Abrasive Syst Ltd | ウエーハのレーザー加工方法 |
US7459377B2 (en) | 2004-06-08 | 2008-12-02 | Panasonic Corporation | Method for dividing substrate |
US7804043B2 (en) | 2004-06-15 | 2010-09-28 | Laserfacturing Inc. | Method and apparatus for dicing of thin and ultra thin semiconductor wafer using ultrafast pulse laser |
US7687740B2 (en) | 2004-06-18 | 2010-03-30 | Electro Scientific Industries, Inc. | Semiconductor structure processing using multiple laterally spaced laser beam spots delivering multiple blows |
US7507638B2 (en) | 2004-06-30 | 2009-03-24 | Freescale Semiconductor, Inc. | Ultra-thin die and method of fabricating same |
JP2006024676A (ja) * | 2004-07-07 | 2006-01-26 | Disco Abrasive Syst Ltd | ウエーハの分割方法 |
JP4018088B2 (ja) | 2004-08-02 | 2007-12-05 | 松下電器産業株式会社 | 半導体ウェハの分割方法及び半導体素子の製造方法 |
US7199050B2 (en) | 2004-08-24 | 2007-04-03 | Micron Technology, Inc. | Pass through via technology for use during the manufacture of a semiconductor device |
JP4018096B2 (ja) | 2004-10-05 | 2007-12-05 | 松下電器産業株式会社 | 半導体ウェハの分割方法、及び半導体素子の製造方法 |
US20060088984A1 (en) | 2004-10-21 | 2006-04-27 | Intel Corporation | Laser ablation method |
US20060086898A1 (en) | 2004-10-26 | 2006-04-27 | Matsushita Electric Industrial Co., Ltd. | Method and apparatus of making highly repetitive micro-pattern using laser writer |
US20060146910A1 (en) | 2004-11-23 | 2006-07-06 | Manoochehr Koochesfahani | Method and apparatus for simultaneous velocity and temperature measurements in fluid flow |
JP4288229B2 (ja) | 2004-12-24 | 2009-07-01 | パナソニック株式会社 | 半導体チップの製造方法 |
US7875898B2 (en) | 2005-01-24 | 2011-01-25 | Panasonic Corporation | Semiconductor device |
JP2006253402A (ja) | 2005-03-10 | 2006-09-21 | Nec Electronics Corp | 半導体装置の製造方法 |
US7361990B2 (en) | 2005-03-17 | 2008-04-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Reducing cracking of high-lead or lead-free bumps by matching sizes of contact pads and bump pads |
JP4478053B2 (ja) | 2005-03-29 | 2010-06-09 | 株式会社ディスコ | 半導体ウエーハ処理方法 |
JP4285455B2 (ja) | 2005-07-11 | 2009-06-24 | パナソニック株式会社 | 半導体チップの製造方法 |
JP4599243B2 (ja) | 2005-07-12 | 2010-12-15 | 株式会社ディスコ | レーザー加工装置 |
JP4769560B2 (ja) | 2005-12-06 | 2011-09-07 | 株式会社ディスコ | ウエーハの分割方法 |
JP4372115B2 (ja) | 2006-05-12 | 2009-11-25 | パナソニック株式会社 | 半導体装置の製造方法、および半導体モジュールの製造方法 |
JP4480728B2 (ja) | 2006-06-09 | 2010-06-16 | パナソニック株式会社 | Memsマイクの製造方法 |
JP4544231B2 (ja) | 2006-10-06 | 2010-09-15 | パナソニック株式会社 | 半導体チップの製造方法 |
JP4840174B2 (ja) | 2007-02-08 | 2011-12-21 | パナソニック株式会社 | 半導体チップの製造方法 |
JP4840200B2 (ja) | 2007-03-09 | 2011-12-21 | パナソニック株式会社 | 半導体チップの製造方法 |
US7926410B2 (en) | 2007-05-01 | 2011-04-19 | J.R. Automation Technologies, L.L.C. | Hydraulic circuit for synchronized horizontal extension of cylinders |
JP5205012B2 (ja) | 2007-08-29 | 2013-06-05 | 株式会社半導体エネルギー研究所 | 表示装置及び当該表示装置を具備する電子機器 |
US7824146B2 (en) * | 2007-09-07 | 2010-11-02 | Advanced Technology Development Facility | Automated systems and methods for adapting semiconductor fabrication tools to process wafers of different diameters |
JP4858395B2 (ja) | 2007-10-12 | 2012-01-18 | パナソニック株式会社 | プラズマ処理装置 |
TW200935506A (en) * | 2007-11-16 | 2009-08-16 | Panasonic Corp | Plasma dicing apparatus and semiconductor chip manufacturing method |
US7859084B2 (en) | 2008-02-28 | 2010-12-28 | Panasonic Corporation | Semiconductor substrate |
JP2009260272A (ja) | 2008-03-25 | 2009-11-05 | Panasonic Corp | 基板の加工方法および半導体チップの製造方法ならびに樹脂接着層付き半導体チップの製造方法 |
CN101990480A (zh) | 2008-04-10 | 2011-03-23 | 应用材料股份有限公司 | 激光刻划平台与杂合书写策略 |
US20100013036A1 (en) | 2008-07-16 | 2010-01-21 | Carey James E | Thin Sacrificial Masking Films for Protecting Semiconductors From Pulsed Laser Process |
US8609512B2 (en) | 2009-03-27 | 2013-12-17 | Electro Scientific Industries, Inc. | Method for laser singulation of chip scale packages on glass substrates |
JP5992334B2 (ja) | 2009-12-31 | 2016-09-14 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | ウエハのエッジおよび斜面の堆積を修正するためのシャドウリング |
US8642448B2 (en) | 2010-06-22 | 2014-02-04 | Applied Materials, Inc. | Wafer dicing using femtosecond-based laser and plasma etch |
US20120083129A1 (en) * | 2010-10-05 | 2012-04-05 | Skyworks Solutions, Inc. | Apparatus and methods for focusing plasma |
US9082839B2 (en) | 2011-03-14 | 2015-07-14 | Plasma-Therm Llc | Method and apparatus for plasma dicing a semi-conductor wafer |
US8802545B2 (en) | 2011-03-14 | 2014-08-12 | Plasma-Therm Llc | Method and apparatus for plasma dicing a semi-conductor wafer |
JP6106162B2 (ja) * | 2011-05-31 | 2017-03-29 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 縁部、側部及び裏面の保護を備えたドライエッチングのための装置及び方法 |
TWI476831B (en) | 2012-03-28 | 2015-03-11 | Tgl tio2/sio2/nitride dry etch | |
US8946057B2 (en) | 2012-04-24 | 2015-02-03 | Applied Materials, Inc. | Laser and plasma etch wafer dicing using UV-curable adhesive film |
JP5886821B2 (ja) | 2013-01-04 | 2016-03-16 | ピーエスケー インコーポレイテッド | 基板処理装置及び方法 |
US9236305B2 (en) * | 2013-01-25 | 2016-01-12 | Applied Materials, Inc. | Wafer dicing with etch chamber shield ring for film frame wafer applications |
US9997381B2 (en) * | 2013-02-18 | 2018-06-12 | Lam Research Corporation | Hybrid edge ring for plasma wafer processing |
US8912075B1 (en) * | 2014-04-29 | 2014-12-16 | Applied Materials, Inc. | Wafer edge warp supression for thin wafer supported by tape frame |
US9034771B1 (en) | 2014-05-23 | 2015-05-19 | Applied Materials, Inc. | Cooling pedestal for dicing tape thermal management during plasma dicing |
CN105439524A (zh) * | 2015-11-06 | 2016-03-30 | 刘学生 | 一种用于儿童房间墙面装饰的无染料硅藻土功能型壁材 |
-
2014
- 2014-09-19 US US14/491,856 patent/US11195756B2/en active Active
-
2015
- 2015-08-26 EP EP15841464.9A patent/EP3195350A4/en not_active Ceased
- 2015-08-26 WO PCT/US2015/047038 patent/WO2016043938A1/en active Application Filing
- 2015-08-26 JP JP2017515746A patent/JP6676042B2/ja active Active
- 2015-08-26 CN CN201580056404.5A patent/CN107078015B/zh active Active
- 2015-08-26 KR KR1020177010235A patent/KR102477122B1/ko active IP Right Grant
- 2015-08-28 TW TW108116517A patent/TWI686865B/zh active
- 2015-08-28 TW TW104128461A patent/TWI663648B/zh active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012133585A1 (ja) * | 2011-03-29 | 2012-10-04 | 東京エレクトロン株式会社 | プラズマエッチング装置及びプラズマエッチング方法 |
JP2014523114A (ja) * | 2011-06-15 | 2014-09-08 | アプライド マテリアルズ インコーポレイテッド | 基板キャリアを用いたハイブリッドレーザ・プラズマエッチングウェハダイシング |
JP2014165182A (ja) * | 2013-02-21 | 2014-09-08 | Panasonic Corp | プラズマ処理装置及びプラズマ処理方法 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020501359A (ja) * | 2016-11-30 | 2020-01-16 | プラズマ − サーム、エルエルシー | 半導体ウエハーをプラズマ・ダイシングするための方法および装置 |
JP2019096812A (ja) * | 2017-11-27 | 2019-06-20 | 株式会社ディスコ | 被加工物の加工方法 |
JP2021509227A (ja) * | 2018-06-20 | 2021-03-18 | エルジー・ケム・リミテッド | 回折格子導光板用モールドの製造方法および回折格子導光板の製造方法 |
Also Published As
Publication number | Publication date |
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KR102477122B1 (ko) | 2022-12-13 |
TW201933482A (zh) | 2019-08-16 |
EP3195350A4 (en) | 2018-05-23 |
WO2016043938A1 (en) | 2016-03-24 |
JP6676042B2 (ja) | 2020-04-08 |
TWI663648B (zh) | 2019-06-21 |
TW201612974A (en) | 2016-04-01 |
US11195756B2 (en) | 2021-12-07 |
CN107078015A (zh) | 2017-08-18 |
CN107078015B (zh) | 2019-06-07 |
KR20170056650A (ko) | 2017-05-23 |
US20160086852A1 (en) | 2016-03-24 |
EP3195350A1 (en) | 2017-07-26 |
TWI686865B (zh) | 2020-03-01 |
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