TWI476831B - Tgl tio2/sio2/nitride dry etch - Google Patents

Tgl tio2/sio2/nitride dry etch

Info

Publication number
TWI476831B
TWI476831B TW101110825A TW101110825A TWI476831B TW I476831 B TWI476831 B TW I476831B TW 101110825 A TW101110825 A TW 101110825A TW 101110825 A TW101110825 A TW 101110825A TW I476831 B TWI476831 B TW I476831B
Authority
TW
Taiwan
Prior art keywords
tgl
tio2
sio2
dry etch
nitride dry
Prior art date
Application number
TW101110825A
Other languages
Chinese (zh)
Other versions
TW201340201A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to TW101110825A priority Critical patent/TWI476831B/en
Publication of TW201340201A publication Critical patent/TW201340201A/en
Application granted granted Critical
Publication of TWI476831B publication Critical patent/TWI476831B/en

Links

TW101110825A 2012-03-28 2012-03-28 Tgl tio2/sio2/nitride dry etch TWI476831B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW101110825A TWI476831B (en) 2012-03-28 2012-03-28 Tgl tio2/sio2/nitride dry etch

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW101110825A TWI476831B (en) 2012-03-28 2012-03-28 Tgl tio2/sio2/nitride dry etch

Publications (2)

Publication Number Publication Date
TW201340201A TW201340201A (en) 2013-10-01
TWI476831B true TWI476831B (en) 2015-03-11

Family

ID=49771027

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101110825A TWI476831B (en) 2012-03-28 2012-03-28 Tgl tio2/sio2/nitride dry etch

Country Status (1)

Country Link
TW (1) TWI476831B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11195756B2 (en) 2014-09-19 2021-12-07 Applied Materials, Inc. Proximity contact cover ring for plasma dicing

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000114235A (en) * 1998-09-30 2000-04-21 Ibiden Co Ltd Part for semiconductor producing apparatus and method of producing the same
US20040163762A1 (en) * 2001-07-27 2004-08-26 Iizuka Hachishiro Plasma treating device and substrate mounting table
JP2009010017A (en) * 2007-06-26 2009-01-15 Mitsubishi Materials Corp Focus ring for plasma etching apparatus generating fewer particles
US20100144157A1 (en) * 2006-02-27 2010-06-10 Tokyo Electron Limited Plasma etching apparatus and method
US20100279516A1 (en) * 2008-01-11 2010-11-04 Chen-An Chen Apparatus and method of aligning and positioning a cold substrate on a hot surface

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000114235A (en) * 1998-09-30 2000-04-21 Ibiden Co Ltd Part for semiconductor producing apparatus and method of producing the same
US20040163762A1 (en) * 2001-07-27 2004-08-26 Iizuka Hachishiro Plasma treating device and substrate mounting table
US20100144157A1 (en) * 2006-02-27 2010-06-10 Tokyo Electron Limited Plasma etching apparatus and method
JP2009010017A (en) * 2007-06-26 2009-01-15 Mitsubishi Materials Corp Focus ring for plasma etching apparatus generating fewer particles
US20100279516A1 (en) * 2008-01-11 2010-11-04 Chen-An Chen Apparatus and method of aligning and positioning a cold substrate on a hot surface

Also Published As

Publication number Publication date
TW201340201A (en) 2013-10-01

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